Homework #2: GaN physics and technology (Due: October 6, 2003)

1. GaN based power schottky diodes: Refer to the figure of the lecture 5. Starting from
Poisson’s equation and integrating twice show that the applied reverse voltage (let that be
the breakdown voltage) is given by VB  qN d W 2 2 s  0 . Also show that the maximum
electric field (at the edge of the metal when breakdown voltage is applied) is given
Ec  qN d W /  s  0 (Hint: just remember that the negative sheet charge at the metal edge is
exactly equal to the total positively charged donors in the depletion region in the
semiconductor due to charge neutrality).
Now calculate the resistance of the low-doped GaN region, assuming a width W,
mobility n and doping Nd. Now from the expressions of VB and Ec prove that the
resistance per unit area is given by 4VB2 /  r  n Ec3 (neglecting the substrate and the
contact resistances). The denominator gives the Baliga figure of merit (BFOM) as
mentioned in the class. Now calculate the ratio of on-resistances for Si and GaN using the
material properties given in the comparison table in lecture 4 assuming you want to have
same breakdown voltages. You should be able to see the advantages of using GaN. A
lower turn-on resistance is helpful for a higher percentage the voltage output and lower
loss in the diode, for example in a simple rectifier configuration. (15 points)

2. Lattice structures and miller indices: Show the directions [11-20] and [10-10] in the
hexagonal basal planes. Also, show the direction [11-23]. This is the direction of the
burgers vector for a mixed screw-edge type dislocation. Assuming that the GaN crystal is
a perfect Wurtzite, mark the distances of the Ga and N atomic planes in terms of the
vertical unit cell height c. Draw the plane [11-20] and shade it. How are the atomic
arrangements different from the atomic arrangements in the planes parallel to the c-axis?
Are the areal densities of Ga and N atoms same? You should also be able to convince
yourself that along the [0001] direction the atomic arrangement of the crystal looks
different than the [000-1] direction. This makes the crystal non-centrosymmetric. This,
along with the atomic arrangement in a single plane, are the basic conditions to be
satisfied for the existence of polarization in any crystal. (15 points)

3. Polarization in III-nitrides: Both Ga and N atoms in GaN are sp 3 hybridized and

have a tetrahedral bonding arrangement with the other type. Also, they are different from
the ideal c/a ratio of 8 / 3 . This (along with the conditions in question 2) gives rise to
spontaneous polarization. Draw the tetrahedral bonding arrangement with N atoms for an
isolated Ga atom, and mark the positive delta and negative delta charges of the dipolar
bonds. Now imagine that the arrangement is stretched along the basal plane. What will
happen to the c/a ratio? How will the dipole moment change? The change in polarization
due to strain in the basal plane is called piezoelectric polarization.
Also prove that for perfect HCP lattice (not GaN lattice, which is two
interpenetrating HCPs of Ga and N) the c/a ratio is 8 / 3 . (20 points)

4. Polarization directions and fields: Draw the direction of spontaneous and

piezoelectric polarization for relaxed GaN on top of AlGaN under tensile strain, which is
in turn, on top of relaxed GaN. How do the fixed charges at each of the interfaces relate
to each other? Assume Ga face material.
Now consider the multiple quantum well (MQW) consisting of Ga-face AlGaN
and GaN layers (as shown in the lecture note 7). Use the Gauss law for a planar interface
and the charge conservation law to show that

GaN
Etot 
d AlGaN
d AlGaN  GaN  d GaN  AlGaN
  
PspAlGaN  PpzAlGaN  PspGaN  PpzGaN 
AlGaN
Etot 
d GaN
d AlGaN  GaN  d GaN  AlGaN
  
PspGaN  PpzGaN  PspAlGaN  PpzAlGaN 

Now referring to the values of spontaneous and piezoelectric polarization in the JAP
paper by O. Ambacher (1999), find the electric field in the AlGaN and GaN layer for 35%
Al composition. Thickness of the AlGaN and GaN layer are 50 and 100 angstroms
respectively. Assume relaxed GaN. (30 points)

5. Quaternaries: Calculate the composition of In for which InAlN is lattice matched to

GaN (do not compare with the value in the note, it is not right). Calculate the fixed sheet
charge density at the interface of lattice matched InAlGaN and GaN when the bandgap
difference is 1eV. Assume linear interpolation between AlN and GaN and InN properties
for all compositions. (Hint: look at the lattice constant vs. bandgap curve in lecture 7).
Now, calculate the composition of AlGaInN (on GaN) when the polarization field
in it will be same as the polarization in GaN (the bandgap will still be 1eV more than
GaN). Will it be compressive or tensile strain in AlInGaN? Assume relaxed GaN layer.
(Hint: move horizontally in the lattice constant vs. bandgap curve in lecture 7). When the
polarization gradient becomes zero across a layer the fixed charge also becomes zero.
Thus the built in field also disappears. This has important consequences for
optoelectronic devices as we will see later. In practice however, the realization of exactly
same polarization is difficult due to the factors such as thermal mismatch. (25 points)