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Silicon Detectors !: Manfred Krammer! Institute of High Energy Physics, Vienna, Austria!
Silicon Detectors !: Manfred Krammer! Institute of High Energy Physics, Vienna, Austria!
Silicon Detectors !: Manfred Krammer! Institute of High Energy Physics, Vienna, Austria!
Manfred Krammer!
Institute of High Energy Physics, Vienna, Austria!
Silicon Detectors
Content!
2 Basics!
3 Detector Structures!
4 Performance!
6 The CMS Inner Tracker!
Valence electron!
Conduction electron!
! Each atom has 4 closest neighbors, the 4 electrons in the outer shell are
shared and form covalent bonds.!
! At low temperature all electrons are bound!
! At higher temperature thermal vibrations break some of the bonds " free e-
cause conductivity (electron conduction)!
! The remaining open bonds attract other e- " The holes change position
(hole conduction)!
In an isolated atom the electrons have only discrete energy levels. In solid state
material the atomic levels merge to energy bands. In metals the conduction and
the valence band overlap, whereas in isolators and semiconductors these levels
are separated by an energy gap (band gap). In isolators this gap is large.!
$ Eg ' 3 $ Eg '
ni = NC NV " exp&# ) * T " exp&#
2
)
% 2kT ( % 2kT (
One of the most important parameter of a detector is the signal to noise ratio
(SNR). A good detector should have a large SNR. However this leads to two
contradictory requirements:!
# Large signal
" low ionisation energy " small band gap!
# Low noise
" very few intrinsic charge carriers " large band gap!
Doping with an element 5 atom (e.g. P, As, Sb). The 5th valence electrons is
weakly bound.!
The doping atom is called donor! The released conduction electron
leaves a positively charged ion!
The energy level of the donor is just below the edge of the conduction band. At
room temperature most electrons are raised to the conduction band.!
The fermi level EF moves up. !
Doping with an element 3 atom (e.g. B, Al, Ga, In). One valence bond
remains open. This open bond attracts electrons from the neighbor atoms.!
The doping atom is called acceptor. ! The acceptor atom in the lattice is
negatively charged.!
The energy level of the acceptor is just above the edge of the valence band. At
room temperature most levels are occupied by electrons leaving holes in the
valence band.!
The fermi level EF moves down. !
At the interface of an n-type and p-type semiconductor the difference in the fermi
levels cause diffusion of surplus carries to the other material until thermal equilibrium
is reached. At this point the fermi level is equal. The remaining ions create a space
charge and an electric field stopping further diffusion.!
The stable space charge region is free of charge carries and is called the depletion
zone.!
The depletion voltage is the minimum voltage at which the bulk of the sensor is
fully depleted. The operating voltage is usually chosen to be slightly higher
(overdepletion).!
High resistivity material (i.e. low doping) requires low depletion voltage.!
!
Measured detector capacitance as a
function of the bias voltage, CMS strip
detector:!
S.L. Shapiro et al., Si PIN Diode Array Hybrids for Charged ! L. Rossi, Pixel Detectors Hybridisation, !
Particle Detection, Nucl. Instr. Meth. A 275, 580 (1989)! Nucl. Instr. Meth. A 501, 239 (2003)!
Electron microscope pictures before and after the reflow production step. !
PbSn bump, diameter 25 µm, pitch: 50 µm, reflow by heating to app. 300 °C.!
L. Rossi, Pixel Detectors Hybridisation, Nucl. Instr. Meth. A 501, 239 (2003)!
!
M. Krammer, Praktikum 2010/11! Silicon Detectors! 31!
4.1 Noise Contributions
Detector capacity!
! Physics processes:!
– Statistical fluctuations of the energy loss!
– Diffusion of charge carriers!
! External parameter:!
– Binary readout (thresh hold counter) or read out of
analogue signal value!
– Distance between strips (strip pitch)!
– Signal to noise ratio!
! Silicon position detectors are thin (300–500 µm) and absorb only a small
fraction of the total energy of through going particles. !
! The energy loss dE/dx follows a Landau distribution, an asymmetric
probability function with a long tail to large energy deposits.!
! Example of a mip measured in a 300 µm thick silicon detector:!
Pions and Protons:!
o Most probable energy loss
! ! !!
CMS
A Compact Solenoidal Detetor for LHC
MUON CHAMBERS INNER TRACKER
E.M. CRYSTAL CAL.
HADRON CAL.
VERY FORWARD
CALORIMETER
SUPERCONDUCTING COIL
Total Weight : 12,000 t.
Overall diameter : 14.00 m
RETURN YOKE
Overall length : 20.00 m
Magnetic field : 4 Tesla jlb
CMS 1000
Volume 24.4 m3
temperature -10 0C
dry atmosphere
M. Krammer, Praktikum 2010/11! Silicon Detectors! 41!
6.3 The CMS Inner Tracker
Some numbers!
Strip detector:
!~200 m2 of silicon sensors
!24,244 single silicon sensors
!15,148 modules
!9,600,000 strips $ electronics channels
!75,000 read out chips (APV25)
!25,000,000 Wire bonds!
!
Pixel detector:!
!1 m2 detector area!
!1440 pixel modules!
!66 million pixels!
!
Industrial type of production in many laboratories worldwide.!
!Largest Silicon detector built so far !!
~50 cm!
~1 m!
~40 cm!
Barrel Pixel!
Forward Pixel!
M. Krammer, Praktikum 2010/11! Silicon Detectors! 54!
6.3 The CMS Inner Tracker
Possible discoveries at the LHC: Higgs!
A promising discovery channel for a light Standard Model Higgs Boson is!
ttH"jjb l%b bb:!
Simulation of a 120 GeV Higgs decaying inside the CMS Silicon tracker:!