SEMICONDUCTOR IRF3205 Series RoHS

RoHS
Nell High Power Products
N-Channel Power MOSFET
(110A, 55Volts)
DESCRIPTION
The Nell IRF3205 is a three-terminal silicon
device with current conduction capability
D D
of 110A, fast switching speed, low on-state
resistance, breakdown voltage rating of 55V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
G
and reliable device for use in a wide variety of D
applications. These transistors can be operated G S
directly from integrated circuits. D
S
FEATURES TO-220AB TO-263(D2PAK)
RDS(ON) = 0.010Ω @ VGS = 10V (IRF3205A) (IRF3205H)
Ultra low gate charge(150nC max.)
Low reverse transfer capacitance
(C RSS = 210pF typical)
Fast switching capability
100% avalanche energy specified
D (Drain)
Improved dv/dt capability
175°C operation temperature

PRODUCT SUMMARY
ID (A) 110
G
ID (A), Package Limited 75 (Gate)
VDSS (V) 55
RDS(ON) (Ω) 0.010 @ V GS = 10V
S (Source)
QG(nC) max. 150

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 55
V DGR Drain to Gate voltage R GS =20KΩ 55 V

V GS Gate to Source voltage ±20

V GS =10V, T C =25°C 110

ID Continuous Drain Current (Note 1)
V GS =10V, T C =100°C 80
A
I DM Pulsed Drain current(Note 2) 390
I AR Avalanche current(Note 2) 62

E AR Repetitive avalanche energy(Note 2 ) 20 mJ

dv/dt Peak diode recovery dv/dt(Note 3) 5 V /ns

Total power dissipation T C =25°C 200 W

PD
Derating factor above 25 ° C 1.3 W /°C

TJ Operation junction temperature -55 to 175

T STG Storage temperature -55 to 175 ºC

TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300

Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)

Note: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A .
2 . Repetitive rating: pulse width limited by junction temperature.
3 . I SD ≤ 62 A, di/dt ≤ 207 A/µs, V DD ≤ V (BR)DSS , T J ≤ 175 °C.

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 SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL PARAMETER Min. Typ. Max. UNIT
Rth(j-c) Thermal resistance, junction to case 0.75
Rth(c-s) Thermal resistance, case to heatsink 0.50 ºC/W
Rth(j-a) Thermal resistance, junction to ambient 62

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
V(BR)DSS Drain to source breakdown voltage V GS = 0V, I D = 250µA 55 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 1mA, referenced to 25°C 0.057 V/ºC

V DS =55V, V GS =0V T C = 25°C 25

I DSS Drain to source leakage current μA
V DS =44V, V GS =0V T C =150°C 250

Gate to source forward leakage current V GS = 20V, V DS = 0V 100

I GSS nA
Gate to source reverse leakage current V GS = -20V, V DS = 0V -100
R DS(ON) Static drain to source on-state resistance V GS = 10V, l D = 62A (Note 1) 8.0 10 mΩ
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2 4 V

g fS Forward transconductance V DS =25V, I D =62A 44 S

C ISS Input capacitance 3240

C OSS Output capacitance V DS = 25V, V GS = 0V, f =1MHz 780 pF

C RSS Reverse transfer capacitance 210

t d(ON) Turn-on delay time 14

tr Rise time V DD = 28V, I D = 62A,R G = 4.5Ω, 100
ns
t d(OFF) Turn-off delay time V GS = 10V (Note 1) 50

tf Fall time 65

LD Internal drain inductance Between lead, 6mm from 1.5

nH
LS package and center of die
Internal source inductance 7.5

QG Total gate charge 150

Q GS Gate to source charge V DS = 44V, V GS = 10V, I D = 62A 35 nC

Q GD Gate to drain charge (Miller charge) 55

E AS Single pulse avalanche energy(Note 2) l AS = 62A, L= 138μH 1050 270 mJ

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS Min. Typ. Max. UNIT
VSD Diode forward voltage I SD = 62A, V GS = 0V 1.3 V
I s (Is D ) Continuous source to drain current Integral reverse P-N junction 110
diode in the MOSFET
D (Drain)

I SM Pulsed source current A

G
(Gate) 390
S (Source)

t rr Reverse recovery time I SD = 62A, V GS = 0V, 70 110 ns

Q rr Reverse recovery charge dI F /dt = 100A/µs

145 220 nC

t ON Forward turn-on time Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)

Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2% .

2. L=138μH, I AS ≤ 62A, R G =25Ω, T J ≤ 175° C

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 SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products

ORDERING INFORMATION SCHEME

IRF 3205 A

MOSFET series
N-Channel, IR series

Current & Voltage rating, lD & VDS

110A / 55V

Package type
A = TO-220AB
H = TO-263 (D2PAK)

Fig.1 Typical output characteristics Fig.2 Typical output characteristics

10 3 V GS
10 3 V GS
Top: 15V Top: 15V
Drain-to-Source Current,l D (A)

Drain-to-Source Current,l D (A)

10V 10V
8V 8V
7V 7V
6V 6V
5.5V 5.5V
5V 5V
10 2 Bottorm: 4.5V 10 2 Bottorm: 4.5V

4.5V

10 1 10 1
4.5V

20µs pulse width

20µs pulse width
T J =175°C
T J =25°C
1 1
0.1 1 10 10 2 0.1 1 10 10 2

Drain-to-Source voltage, V DS (V) Drain-to-Source voltage, V DS (V)

Fig.3 Typical transfer characteristics Fig.4 Normalized On-Resistance vs. Temperature

10 3 2.5
Drain-to-Source on-resistance, R DS(on)
Drain-to-Source Current,l D (A)

l D =107A
T J = 25°C
2.0
T J = 175°C

10 2
(Normalized)

1.5

1.0
10 1

0.5
V DS =25V V GS =10V
20µs pulse width
1 0
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

Gate-to-Source voltage, V GS (V) Junction Temperature,T J (°C)

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 SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products

Fig.5 Typical capacitance vs. Drain-to-Source Fig.6 Typical gate charge vs. Gate-to-Source
voltage voltage

6000 16
V GS = 0V, f =1MHZ l D = 62A
14

Gate-to-Source voltage,V GS (V)

C iss = C gs +C gd ( C ds = shorted )
5000 C rss = C gd
12 V DS = 44V
Capacitance,C (pF)

C oss = C ds +C gd
V DS = 27V
4000
Ciss 10 V DS = 11V

3000 8

6
2000 Coss
4
1000
Crss 2

0 0
1 10 100 0 20 40 60 80 100 120

Drain-to-Source voltage, V DS (V) Total gate charge, Q G (nC)

Fig.7 Typical Source-Drain diode forward Fig.8 Maximum safe operating area
voltage

10 3 10 4

Operation in This Area is Limited by R DS(ON)

Reverse drain current, l SD (A)

T J = 17 5°C
Drain current, l D (A)

10 2 10 3

10µs
100µs
10 10 2
1ms
10ms

T J = 25 °C
1 10
Note:
1. T C = 25°C
V GS = 0V 2. T J = 175°C
3. Single Pulse
0.1 1
0.2 0.8 1.4 2.0 2.6 1 10 100 1000

Source-to-Drain voltage, V SD (V) Drain-to-Source voltage, V DS (V)

Fig.9 Maximum drain current vs.

Case temperature

120
LIMITED BY PACKAGE
100
Drain Current, l D (A)

80

60

40

20

0
25 50 75 100 125 150 175

Case temperature, T C ( ° C)

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 SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products

Fig.10 Maximum effective transient thermal lmpedance,

Junction-to-Case

1
Thermal response, Rth(j-c) (°C/W)

D = 0.5

0.2

0.1 0.1

PDM
0.05

0.02 Single pulse t1

0.01 (Thermal response) t2

Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1

Rectangular Pulse Duration, t 1 (sec)

Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms

RD
V DS
V DS
V GS 90%

RG D.U.T. +
- V DD

10V 10%
Pulse width ≤ 1µs V GS
Duty Factor ≤ 0.1%
t d(ON) t d(OFF)
tR
tF

Fig.12a. Unclamped lnductive test circuit Fig.12b. Unclamped lnductive waveforms

15V
BV DSS

l AS
DRIVER
L
V DS
l D(t)
V DS(t)
RG V DD
D.U.T. +
V
- DD
l AS A
20V
Time
tP 0.01Ω
tp

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 SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products

Fig.12c. Maximum avalanche energy vs.

Drain current

Single pulse avalanche energy, E AS (mJ)

500
lD
TOP 25A
44A
400 BOTTOM 62A

300

200

100

0
25 50 75 100 125 150 175

Junction temperature, T J (°C)

Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit

Current Regulator
Same Type as D.U.T.
V GS

50KΩ
QG
12V 0.2µF
10V
0.3µF

Q GD
+
Q GS V DS
D.U.T. -

V GS

3mA

lG lD
Charge
Current Sampling Resistors

Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET

Driver Gate Drive

D.U.T. Period D=
P.W.
+ Circuit Layout Considerations P.W. Period
• Low Stray lnductance
• Ground Plane VGS=10V *
• Low Leakage lnductance
Current Transformer
-
D.U.T. I SD Waveform
+
Reverse
Recovery Body Diode Forward
Current Current
- + di/dt
-
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
• dv/dt controlled by R G Voltage
RG + Body Diode Forward Drop
• Driver same type as D.U.T.
• l SD controlled by Duty Factor " D " V DD Inductor Curent
-
• D.U.T. -Device Under Test
Ripple ≤ 5% ISD

*V GS = 5V for Logic Level Devices

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 SEMICONDUCTOR IRF3205 Series RoHS
RoHS
Nell High Power Products

Case Style

TO-220AB
10.54 (0.415) MAX.

9.40 (0.370) 3.91 (0.154) 4.70 (0.185)

9.14 (0.360) 3.74 (0.148) 4.44 (0.1754)
1.39 (0.055)
2.87 (0.113)
1.14 (0.045)
2.62 (0.103)

3.68 (0.145)
3.43 (0.135)
16.13 (0.635) 15.32 (0.603)
15.87 (0.625) 14.55 (0.573)
PIN 8.89 (0.350)
1 2 3 8.38 (0.330)
4.06 (0.160) 29.16 (1.148)
3.56 (0.140) 28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045) 14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095) 0.90 (0.035)
2.65 (0.104) 0.70 (0.028)
5.20 (0.205) 0.56 (0.022)
2.45 (0.096)
4.95 (0.195) 0.36 (0.014)

TO-263(D 2 PAK)

10.45 (0.411) 4.83 (0.190)

9.65 (0.380) 4.06 (0.160) 1.40 (0.055)
1.14 (0.045)
6.22 (0.245)

1.40 (0.055)
9.14 (0.360)
1.19 (0.047)
8.13 (0.320) 15.85 (0.624)
15.00 (0.591)

0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027) 0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095) 3.56 (0.140)
5.20 (0.205) 2.79 (0.110) D (Drain)
4.95 (0.195)

G
(Gate)

S (Source)
All dimensions in millimeters(inches)

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