PHYSICAL METALLURGY ASSIGNMENT-4

Topic- Dielectric of materials

1)Calculate the relative dielectric constant of a barium titanate crystal, which, when inserted in a parallel
plate condenser of area 100mm2 and distance of separation of 2 mm, gives a capacitance of 10-9 F.
A) 2280 B) 2259 C) 2345 D) 2432
2) Calculate the polarization of a BaTiO3 crystal. The shift of the titanium ion from the body centre is
0.06 Å. The oxygen anions of the side faces shift by 0.06 Å, while the oxygen anions of the top and
bottom faces shift by 0.08 Å, all in a direction opposite to that of the titanium ion.
A) 0.20C m-2 B) 0.65C m-2 C) 0.16C m-2 D)1.6C m-2
3) Find the capacitance of a layer of Al2O3 that is 0.5 µm thick and 2000 mm of surface area. ϵr = 8.
2

A) 0.283µF B) 2.83µF C) 28.3µF D) 283µF

4) The capacitance of a capacitor with a layer of Al2O3 (ϵr = 8) of 0.5µm thick and 1000 mm2 area is…..
A) 0.283 µF B) 0.142 µF C) 17 nF D) 3540 Pf
5)If the electronic polarization of W is 4 *10-7 C m-2, the average displacement of the electrons relative to
the nucleus is (W : at.no. 74, BCC, a = 3.16 Å)
A) 3.9 Å B) 5.3 * 10-19 m C) 10.6 *10-19 m D) 3.9* 10-17 m
6) The shift of the electron cloud with respect to the nucleus of a helium atom when a field of 105V/ m is
applied is (αe for He = 0.18 *10-40F m2)
A. 5.6* 10-18 m B) 6.2* 10-19m C) l.7 *10-10 m D) l.7*10 -18 m
7) A piezoelectric crystal has a Young’s modulus of 130 GPa. The uniaxial tensile stress that must be
applied to increase its polarization from 550 to 555 C m-2 is
A) 1.171 GPa B) 1171 MPa C) 2600 MPa D) 1.182 GPa
8) The fraction of tetrahedral voids occupied by Ti4+ ion in BaTiO3 crystal is
A) ½ B) ¼ C) 1/8 D) none
9) In the polarization versus field strength plot for a ferroelectric crystal, Ps stands for
A) space charge polarization B) saturation polarization
C) spontaneous polarization D) none of these
10) With increase in temperature, the orientation polarization in general
A) increases B) decreases
C) is constant D) none of these
11) Among the common dielectric materials, the highest dielectric strength is possessed by
A) mica B) transformer oil
C) PVC D) polyethylene
12)Estimate the shift of the electron cloud with respect to the nucleus in an argon atom, when a field of
105 V m-1 is applied…………………..
13) A parallel-plate capacitor using a dielectric material having an ϵr of 2.2 has a plate spacing of 2 mm
(0.08 in.). If another material having a dielectric constant of 3.7 is used and the capacitance is to be
unchanged, what must the new spacing be between the plates……………
14) Consider a parallel-plate capacitor having an area of 3225 mm2, a plate separation of 1 mm, and a
material having a dielectric constant of 3.5 positioned between the plates.
(a) What is the capacitance of this capacitor?
(b) Compute the electric field that must be applied for 2 *10-8 C to be stored on each plate.
15)The polarization P of a dielectric material positioned within a parallel-plate capacitor is to be 4.0*10-6
C/m2.
A) What must be the dielectric constant if an electric field of 105 V/m is applied.
B) What will be the dielectric displacement D.
16) A charge of 2.0 *10-10 C is to be stored on each plate of a parallel-plate capacitor having an area of
650 mm2 (1.0 in.2) and a plate separation of 4.0 mm (0.16 in.).
(a) What voltage is required if a material having a dielectric constant of 3.5 is positioned within the plates.
(b) What voltage would be required if a vacuum were used.
(c) What are the capacitances for parts (a) and (b).
(d) Compute the dielectric displacement for part (a).
(e) Compute the polarization for part (a).
17)Consider a parallel-plate capacitor having an area of 6.45 *10-4 m2 (1 in.2) and a plate separation of
2*10-3 m (0.08 in.) across which a potential of 10 V is applied. If a material having a dielectric constant of
6.0 is positioned within the region between the plates, compute the following:
(a) The capacitance
(b) The magnitude of the charge stored on each plate
(c) The dielectric displacement D
(d) The polarization
Topic- Electrical properties
1)For intrinsic gallium arsenide, the room-temperature electrical conductivity is 3 *10-7(Ωm)-1, the
electron and hole mobilities are, respectively, 0.80 and 0.04 m2/VΩs. Compute the intrinsic carrier
concentration ni at room temperature.
2)At room temperature, the electrical conductivity of PbS is 25 (Ωm)-1, whereas the electron and hole
mobilities are 0.06 and 0.02 m2/VΩs, respectively. Compute the intrinsic carrier concentration for PbS at
roomtemperature.
3) An n-type semiconductor is known to have an electron concentration of 5 *1017 m-3. If the electron drift
velocity is 350 m/s in an electric field of 1000 V/m, calculate the conductivity of this material.
The room-temperature electrical conductivity of a silicon specimen is 500 (Ωm)-1. The hole concentration
is known to be 2.0 *1022 m-3. Using the electron and hole mobilities for silicon are 0.14 and 0.05,compute
the electron concentration.
4)The following electrical characteristics have been determined for both intrinsic and p-type extrinsic
gallium antimonide (GaSb) at room temperature:
σ(Ωm)-1 n(m-3) p(m-3)
4 23
Intrinsic 8.9 *10 8.7*10 8.7 *1023
5 22
Extrinsic 2.3 *10 7.6*10 1.0 * 1025
(p-type)
5)Calculate electron and hole mobilities. Germanium to which 1024 m-3 As atoms have been added is an
extrinsic semiconductor at room temperature, and virtually all the As atoms may be thought of as being
ionized (i.e., one charge carrier exists for each As atom).
(a) Is this material n-type or p-type?
(b) Calculate the electrical conductivity of this material, assuming electron and hole mobilities of 0.1 and
0.05 m2/VΩs, respectively.
6) At room temperature the electrical conductivity and the electron mobility for aluminum are 3.8*107
(Ωm)-1 and 0.0012 m 2/VΩs, respectively.
(a) Compute the number of free electrons per cubic meter for aluminum at room temperature.
(b) What is the number of free electrons per aluminum atom? Assume a density of 2.7 g/cm3.
7) The resistivity of pure silicon at room temperature is 3000 ohm m. Calculate the intrinsic carrier
density.
8)Find the fraction of electrons excited into the conduction band in germanium at 100 K,300 K ,1200 K.
9)The resistivity of intrinsic germanium at 27°C is 0.43 ohm m. Calculate the intrinsic carrier density at
27°C. Assuming that the number of electrons near the top of the valence band available for thermal
excitation is 5*1025 m-3, calculate the energy gap for germanium.
10)Indium phosphide (InP) has an energy gap of 1.29 eV. The electron and hole mobilities for this
semiconducting compound are 0.46 and 0.015 m2/V s, respectively at 300 K. Calculate its conductivity.
11)The donor ionization energy in germanium doped with phosphorus is 0.012 eV. Calculate the fraction
of donor electrons promoted to the conduction band at 27°C, assuming a Boltzmann distribution.
12)Calculate the fraction of holes present at 300 K in silicon doped withindium. The acceptor level is 0.16
eV above the top of the valence band.
13)Germanium is doped with 10-3atomic fraction of antimony. Calculate the electron and the hole
densities in this extrinsic semiconductor. Assume that the electron density in the conduction band is
entirely that due to donor excitation. Calculate the resistivity of this material at room temperature.
14) A rod of p-type germanium 10 mm long, and 1 mm dia has a resistance of 100 ohm. What is the
concentration of the impurity in this rod.
15) Calculate the drift velocity of an electron moving in a germanium crystal in a field of gradient 1 kV/
m.
16)The field gradient (V m–1) required to accelerate an electron in cubic diamond (Eg = 5.4 eV; a = 3.57
Å) over a distance equal to the atomic radius is……..
A) 7* 1010 B) 3.5* 1010 C) 5.4 D) 1.5*1010
17)The fraction of electrons excited across the energy gap in Ge (Eg = 0.7 eV) at room temperature is
A) 0 B) l.7 *10-12 C) 2*10-12 D) 1.3*10-6
18)If the electron positions corresponding to the standing wave solutions in Ge (energy gap = 0.7 eV)
differ by 1.22 Å, the field gradient in V m-1 required to promote an electron to the conduction band is...
A) 0.85*1010 B) 0.57*1010 C) 106 D) 0.7
19)The resistivity of pure silicon at 0°C is 3000 ohm m. The intrinsic carrier density per cubic metre is
(µe = 0.14 and µh = 0.05 m2 /V s)………..
A) 1.095 *1016 B) 2.19 *1016 C) 1018 D) zero
20) In an extrinsic semiconductor, in the region where mobility variation with temperature is evident, the
slope of log(conductivity) vs. l/T plot is……..
A) positive B) negative C) 0 D) infinity
21)If the drift velocity of holes under a field gradient of 100 V/ m is 5 m/ s, their mobility (in the same SI
units) is…………
A) 0.05 B) 0.5 C) 50 D)500