Professional Documents
Culture Documents
Mje13007 (On) PDF
Mje13007 (On) PDF
Mje13007 (On) PDF
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased IS/b See Figure 6
Clamped Inductive SOA with Base Reverse Biased − See Figure 7
ON CHARACTERISTICS (Note 2)
DC Current Gain hFE −
(IC = 2.0 Adc, VCE = 5.0 Vdc) 8.0 − 40
(IC = 5.0 Adc, VCE = 5.0 Vdc) 5.0 − 30
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 2.0 Adc, IB = 0.4 Adc) − − 1.0
(IC = 5.0 Adc, IB = 1.0 Adc) − − 2.0
(IC = 8.0 Adc, IB = 2.0 Adc) − − 3.0
(IC = 5.0 Adc, IB = 1.0 Adc, TC = 100°C) − − 3.0
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT 4.0 14 − MHz
(IC = 500 mAdc, VCE = 10 Vdc, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time td − 0.025 0.1 ms
Rise Time (VCC = 125 Vdc, IC = 5.0 A, tr − 0.5 1.5
IB1 = IB2 = 1.0 A, tp = 25 ms,
Storage Time Duty Cycle ≤ 1.0%) ts − 1.8 3.0
Fall Time tf − 0.23 0.7
Inductive Load, Clamped (Table 1)
Voltage Storage Time VCC = 15 Vdc, IC = 5.0 A TC = 25°C tsv − 1.2 2.0 ms
Vclamp = 300 Vdc TC = 100°C − 1.6 3.0
www.onsemi.com
2
MJE13007
TYPICAL CHARACTERISTICS
IC/IB = 5 5 IC/IB = 5
1.2
2
VOLTAGE (VOLTS)
VOLTAGE (VOLTS)
1
1
0.5
TC = - 40°C 0.2
0.8 TC = - 40°C
25°C 0.1
25°C
0.6 0.05
100°C
100°C
0.02
0.4 0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
3
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
TJ = 25°C
2.5
1.5 IC = 8 A
IC = 5 A
1
IC = 3 A
0.5 IC = 1 A
0
0.01 0.02 0.05 0.1 0.2 0.5 1 2 3 5 10
IB, BASE CURRENT (AMPS)
100 10000
Cib TJ = 25°C
TJ = 100°C
hFE , DC CURRENT GAIN
C, CAPACITANCE (pF)
1000
25°C
10 40°C
Cob
VCE = 5 V 100
1 10
0.01 0.1 1 10 0.1 1 10 100 1000
IC, COLLECTOR CURRENT (AMPS) VR, REVERSE VOLTAGE (VOLTS)
www.onsemi.com
3
MJE13007
100 10
50 Extended SOA @ 1 ms, 10 ms
20 8
IC, COLLECTOR CURRENT (AMPS)
1
0.7
D = 0.5
0.5
D = 0.2
0.2
D = 0.1
0.1 RqJC(t) = r(t) RqJC
0.07 D = 0.05 P(pk) RqJC = 1.56°C/W MAX
0.05 D CURVES APPLY FOR POWER
D = 0.02 t1 PULSE TRAIN SHOWN
t2 READ TIME AT t1
0.02 TJ(pk) - TC = P(pk) RqJC(t)
D = 0.01 DUTY CYCLE, D = t1/t2
SINGLE PULSE
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 10k
t, TIME (msec)
Figure 9. Typical Thermal Response for MJE13007
www.onsemi.com
4
MJE13007
INTRODUCTION at 25°C and 100°C. Increasing the reverse bias will give
The primary considerations when selecting a power some improvement in device blocking capability.
transistor for SWITCHMODE applications are voltage and The sustaining or active region voltage requirements in
current ratings, switching speed, and energy handling switching applications occur during turn−on and turn−off. If
capability. In this section, these specifications will be the load contains a significant capacitive component, high
discussed and related to the circuit examples illustrated in current and voltage can exist simultaneously during turn−on
Table 2. (Note 1) and the pulsed forward bias SOA curves (Figure 6) are the
proper design limits.
VOLTAGE REQUIREMENTS For inductive loads, high voltage and current must be
sustained simultaneously during turn−off, in most cases,
Both blocking voltage and sustaining voltage are with the base to emitter junction reverse biased. Under these
important in SWITCHMODE applications. conditions the collector voltage must be held to a safe level
Circuits B and C in Table 2 illustrate applications that at or below a specific value of collector current. This can be
require high blocking voltage capability. In both circuits the accomplished by several means such as active clamping, RC
switching transistor is subjected to voltages substantially snubbing, load line shaping, etc. The safe level for these
higher than VCC after the device is completely off (see load devices is specified as a Reverse Bias Safe Operating Area
line diagrams at IC = Ileakage ≈ 0 in Table 2). The blocking (Figure 7) which represents voltage−current conditions that
capability at this point depends on the base to emitter can be sustained during reverse biased turn−off. This rating
conditions and the device junction temperature. Since the is verified under clamped conditions so that the device is
highest device capability occurs when the base to emitter never subjected to an avalanche mode.
junction is reverse biased (VCEV), this is the recommended
NOTE: 1. For detailed information on specific switching applications,
and specified use condition. Maximum ICEV at rated VCEV see ON Semiconductor Application Note AN719, AN873,
is specified at a relatively low reverse bias (1.5 Volts) both AN875, AN951.
www.onsemi.com
5
MJE13007
VCC
+15
150W 100W MTP8P10
V 1 mF 100 mF L +125
3W 3W MTP8P10
TEST CIRCUITS
MUR8100E V
MPF930
RC
MUR105 RB1
MPF930 IC Vclamp = 300 Vdc
RB TUT
+10V IB
MJE210 A SCOPE
RB2 IB
5.1 k
50W 150W D
COMMON TUT VCE
3W 1
500 mF 51
MTP12N10 -4 V
Voff
1 mF
Inductive
V(BR)CEO(sus) Switching RBSOA
VALUES
CIRCUIT
VCC = 125 V
L = 10 mH L = 200 mH L = 500 mH RC = 25
RB2 = 8 RB2 = 0 RB2 = 0 W
D1 = 1N5820 OR
VCC = 20 Volts VCC = 15 Volts VCC = 15 Volts EQUIV.
IC(pk) = 100 mA RB1 selected for RB1 selected for
desired IB1 desired IB1
t1 ADJUSTED TO TYPICAL
tf CLAMPED 25 ms
TEST WAVEFORMS
IC WAVE-
tf UNCLAMPED ≈ t2 OBTAIN IC +11 V
Lcoil (ICM) FORMS
ICM t1 ≈
VCC VCE PEAK
t
t1 tf VCE 0
Lcoil (ICM)
t2 ≈
VCE Vclamp
IB1 9V
VCEM Vclamp tr, tf < 10 ns
TEST EQUIPMENT IB DUTY CYCLE = 1.0%
t SCOPE — TEKTRONIX RB AND RC ADJUSTED
TIME t2 475 OR EQUIVALENT FOR DESIRED IB AND IC
IB2
www.onsemi.com
6
MJE13007
SWITCHING REQUIREMENTS
In many switching applications, a major portion of the
transistor power dissipation occurs during the fall time (tfi).
For this reason considerable effort is usually devoted to
reducing the fall time. The recommended way to accomplish
this is to reverse bias the base−emitter junction during
turn−off. The reverse biased switching characteristics for
inductive loads are shown in Figures 12 and 13 and resistive
loads in Figures 10 and 11. Usually the inductive load
components will be the dominant factor in SWITCHMODE
applications and the inductive switching data will more
closely represent the device performance in actual
application. The inductive switching characteristics are
derived from the same circuit used to specify the reverse
biased SOA curves, (see Table 1) providing correlation
between test procedures and actual use conditions.
www.onsemi.com
7
MJE13007
SWITCHING PERFORMANCE
10000 10000
VCC = 125 V 7000 VCC = 125 V
IC/IB = 5 5000 ts IC/IB = 5
IB(on) = IB(off) IB(on) = IB(off)
TJ = 25°C TJ = 25°C
1000 tr PW = 25 ms
PW = 25 ms 2000
t, TIME (ns)
t, TIME (ns)
1000
700
100 500
tf
td 200
10 100
1 2 3 4 5 6 7 8 9 10 1 2 3 4 5 6 7 8 9 10
IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 10. Turn−On Time (Resistive Load) Figure 11. Turn−Off Time (Resistive Load)
10000
IC IC/IB = 5
Vclamp 5000
90% Vclamp 90% IC IB(off) = IC/2
Vclamp = 300 V tsv
tsv trv tfi tti 2000
LC = 200 mH
tc 1000 VCC = 15 V
t, TIME (ns)
500 TJ = 25°C
Vclamp
10% 10% 200 tc
Vclamp IC
IB 90% IB1 2%
IC 100
tfi
50
20
10
0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10
TIME
IC, COLLECTOR CURRENT (AMP)
Figure 12. Inductive Switching Figure 13. Typical Inductive Switching Times
Measurements
www.onsemi.com
8
MJE13007
COLLECTOR CURRENT
PD = 3200 W 2
ton toff
300 V TURN-OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9 V
A 8A t
TURN-ON DUTY CYCLE ≤ 10% TIME
VCE
VCC VO TURN-OFF
VCC
400 V 1 700 V 1
+
VCC
COLLECTOR VOLTAGE t
Notes: TIME
1 See AN569 for Pulse Power Derating Procedure.
VCC VO
TURN-OFF (REVERSE BIAS) SOA ton
300 V
N 1.5 V ≤ VBE(off) ≤ 9 V t
B 8A
TURN-OFF DUTY CYCLE ≤ 10% VCE
LEAKAGE SPIKE
VCC +
TURN-ON VCC + N (Vo) N (Vo)
+ LEAKAGE
SPIKE VCC
+ VCC
400 V 1 700 V 1
VCC + N (Vo) COLLECTOR VOLTAGE
Notes: t
1 See AN569 for Pulse Power Derating Procedure.
t
300 V TURN-OFF (REVERSE BIAS) SOA
1.5 V ≤ VBE(off) ≤ 9 V VCE
C VO 8A
TURN-ON DUTY CYCLE ≤ 10% 2 VCC
VCC VCC
2 VCC
TURN-OFF
+
VCC 400 V 1 700 V 1 t
COLLECTOR VOLTAGE
Notes:
1 See AN569 for Pulse Power Derating Procedure.
www.onsemi.com
9
MJE13007
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
www.onsemi.com MJE13007/D
10