BAV 99W

Silicon Switching Diode Array

• Connected in series
• For high speed switching applications

Type Marking Ordering Code Pin Configuration Package

BAV 99W A7s Q62702-A1051 1=A1 2=C2 3=C1/A2 SOT-323

Maximum Ratings per Diode

Parameter Symbol Values Unit
Diode reverse voltage VR 70 V
Peak reverse voltage VRM 70
Forward current IF 200 mA
Surge forward current, t = 1 µs IFS 4.5 A
Total Power dissipation Ptot mW
TS = 103 °C 250
Junction temperature Tj 150 °C
Storage temperature Tstg - 65 ... + 150
Thermal Resistance
Junction ambient 1) RthJA ≤ 430 K/W
Junction - soldering point RthJS ≤ 190
1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm2 Cu

Semiconductor Group 1 Apr-03-1997

 BAV 99W

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC characteristics per Diode
Breakdown voltage V(BR) V
I(BR) = 100 µA 70 - -
Forward voltage VF mV
IF = 1 mA - - 715
IF = 10 mA - - 855
IF = 50 mA - - 1000
IF = 150 mA - - 1250
Reverse current IR µA
VR = 70 V, TA = 25 °C - - 2.5
VR = 25 V, TA = 150 °C - - 30
VR = 70 V, TA = 150 °C - - 50
AC characteristics per Diode
Diode capacitance CD pF
VR = 0 V, f = 1 MHz - - 1.5
Reverse recovery time trr ns
IF = 10 mA, IR = 10 mA, RL = 100 Ω
trr measured at 1 mA - - 6

Semiconductor Group 2 Apr-03-1997

 BAV 99W

Forward current IF = f (TA*;TS) Forward current IF = f (VF)

* Package mounted on epoxy TA = 25°C

300

mA
IF

200
TA TS

150

100

50

0
0 20 40 60 80 100 120 °C 150
TA,TS

Permissible Pulse Load RthJS = f(tp) Permissible Pulse Load IFmax/IFDC = f(tp)

10 3 10 2

K/W
RthJS IFmax/IFDC
-

10 2 D=0
0.005
0.01
0.02
0.05
10 1 0.1
0.2
0.5 0.5
0.2
0.1
10 1 0.05
0.02
0.01
0.005
D=0

10 0 10 0
-6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0
10 10 10 10 10 10 s 10 10 10 10 10 10 10 s 10
tp tp

Semiconductor Group 3 Apr-03-1997

 BAV 99W

Forward voltage VF = f (TA) Reverse current IR = f (TA)

Semiconductor Group 4 Apr-03-1997