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FDS3590
November 2000
FDS3590
80V N-Channel PowerTrench® MOSFET
General Description Features
This N-Channel MOSFET has been designed • 6.5 A, 80 V RDS(ON) = 39 mΩ @ VGS = 10 V
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional RDS(ON) = 44 mΩ @ VGS = 6 V
switching PWM controllers.
• Low gate charge
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable • Fast switching speed
RDS(ON) specifications.
• High performance trench technology for extremely
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power low RDS(ON)
supply designs with higher overall efficiency.
• High power and current handling capability
D
D 5 4
D
D 6 3
7 2
G
S 8 1
S
SO-8 S
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W
On Characteristics (Note 2)
VGS(th)n Gate Threshold Voltage VDS = VGS, ID = 250 µA 2 4 V
∆VGS(th) Gate Threshold Voltage ID = 250 µA, Referenced to 25°C –6 mV/°C
===∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 6.5 A 32 39 mΩ
On–Resistance VGS = 10 V, ID = 6.5 A, TJ = 125°C 61 86
VGS = 6 V, ID = 4.5 A 34 44
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 25 A
GFS Forward Transconductance VGS = 10 V, ID = 6.5 A 25 S
Dynamic Characteristics
Ciss Input Capacitance VDS = 40 V, V GS = 0 V, 1180 pF
Coss Output Capacitance f = 1.0 MHz 171 pF
Crss Reverse Transfer Capacitance 50 pF
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
50 2
VGS = 10V
DRAIN-SOURCE ON-RESISTANCE
5.0V
6.0V 1.8
40 4.5V
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
1.6
30 VGS = 4.0V
4.0V 1.4
4.5V
20 5.0V
1.2
6.0V
10V
10 1
3.5V
0.8
0
0 10 20 30 40 50
0 2 4 6 8
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
2.2 0.1
ID = 3.5 A
DRAIN-SOURCE ON-RESISTANCE
ID = 6.5A
RDS(ON), ON-RESISTANCE (OHM)
VGS = 10V
1.8
0.075
RDS(ON), NORMALIZED
1.4
TA = 125oC
0.05
1
TA = 25oC
0.025
0.6
0.2
0
-50 -25 0 25 50 75 100 125 150
2 4 6 8 10
o
TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V)
40 100
VDS = 5V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
TA = -55oC 25oC 10
ID, DRAIN CURRENT (A)
30 125oC TA = 125oC
1
25oC
20 -55oC
0.1
10 0.01
0.001
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
2 3 4 5 6
VSD, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
10 2000
ID = 6.5A f = 1MHz
VGS, GATE-SOURCE VOLTAGE (V)
VDS = 10V
20V VGS = 0 V
8
40V 1500
CAPACITANCE (pF)
CISS
6
1000
4
500
2 COSS
CRSS
0 0
0 6 12 18 24 30 0 20 40 60 80
Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)
100 30
25 RθJA = 125°C/W
ID, DRAIN CURRENT (A)
10 1ms TA = 25°C
10ms
20
100ms
1s
1 15
10s
DC
VGS = 10V
10
SINGLE PULSE
0.1
RθJA = 125oC/W
TA = 25oC 5
0.01 0
0.1 1 10 100 0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V) t, SINGLE PULSE TIME (sec)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1
r(t), NORMALIZED EFFECTIVE
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
RθJA = 125 °C/W
0.1 0.1
0.05 P(pk)
0.02 t1
0.01 t2
0.01
TJ - TA = P * RθJA(t)
Single Pulse
Duty Cycle, D = t1 / t2
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
DISCLAIMER
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. G
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
Authorized Distributor
Fairchild Semiconductor:
FDS3590