Professional Documents
Culture Documents
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G High Voltage Power Transistors
MJD50, NJVMJD50T4G
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance Junction−to−Case RqJC 8.33 °C/W
Thermal Resistance Junction−to−Ambient (Note 2) RqJA 80 °C/W
Lead Temperature for Soldering Purpose TL 260 °C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 30 mAdc, IB = 0)
MJD47, NJVMJD47T4G
VCEO(sus)
250 −
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJD50, NJVMJD50T4G 400 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICEO mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 150 Vdc, IB = 0)
MJD47, NJVMJD47T4G − 0.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 300 Vdc, IB = 0)
MJD50, NJVMJD50T4G − 0.2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current ICES mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 350 Vdc, VBE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJD47, NJVMJD47T4G − 0.1
(VCE = 500 Vdc, VBE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MJD50, NJVMJD50T4G − 0.1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current IEBO mAdc
(VBE = 5 Vdc, IC = 0) − 1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
DC Current Gain hFE −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.3 Adc, VCE = 10 Vdc) 30 150
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 1 Adc, VCE = 10 Vdc) 10 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 1 Adc, IB = 0.2 Adc) − 1
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage VBE(on) Vdc
(IC = 1 Adc, VCE = 10 Vdc) − 1.5
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current Gain − Bandwidth Product fT MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz) 10 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain hfe −
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz) 25 −
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
http://onsemi.com
2
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G
TYPICAL CHARACTERISTICS
TA TC
2.5 25 VCC
TURN-ON PULSE
RC
APPROX
PD, POWER DISSIPATION (WATTS)
200 1.4
VCE = 10 V
100 1.2
TJ = 150°C
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
60 1
40 25°C VBE(sat) @ IC/IB = 5
0.8
20 VBE(on) @ VCE = 4 V
-55°C 0.6
10
0.4 TJ = 25°C
6
4 0.2 VCE(sat) @ IC/IB = 5
2 0
0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2 0.02 0.04 0.06 0.1 0.2 0.4 0.6 1 2
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
1
0.7 D = 0.5
0.5
RESISTANCE (NORMALIZED)
r(t), TRANSIENT THERMAL
0.3 0.2
0.2
0.1
P(pk)
0.05 RqJC(t) = r(t) RqJC
0.1 RqJC = 8.33°C/W MAX
0.07 0.02 D CURVES APPLY FOR POWER
0.05 PULSE TRAIN SHOWN t1
0.01
READ TIME AT t1 t2
0.03 SINGLE PULSE TJ(pk) - TC = P(pk) qJC(t)
0.02 DUTY CYCLE, D = t1/t2
0.01
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1k
t, TIME (ms)
http://onsemi.com
3
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G
5
There are two limitations on the power handling ability of
2
IC, COLLECTOR CURRENT (AMP)
100ms a transistor: average junction temperature and second
1ms 500ms
1 breakdown. Safe operating area curves indicate IC − VCE
0.5
dc
limits of the transistor that must be observed for reliable
TC ≤ 25°C operation; i.e., the transistor must not be subjected to greater
0.2
dissipation than the curves indicate.
0.1 SECOND BREAKDOWN LIMIT The data of Figure 6 is based on TJ(pk) = 150_C; TC is
THERMAL LIMIT @ 25°C variable depending on conditions. Second breakdown pulse
0.05
WIRE BOND LIMIT
limits are valid for duty cycles to 10% provided TJ(pk)
0.02 MJD47
CURVES APPLY BELOW ≤ 150_C. TJ(pk) may be calculated from the data in
0.01 RATED VCEO MJD50
Figure 5. At high case temperatures, thermal limitations will
0.005 reduce the power that can be handled to values less than the
5 10 20 50 100 200 300 500
limitations imposed by second breakdown.
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1 5
TJ = 25°C ts
0.5
VCC = 200 V 2
IC/IB = 5
0.2 tr 1
t, TIME (s)
t, TIME (s)
TJ = 25°C
μ
0.02 0.1
0.01 0.05
0.02 0.05 0.1 0.2 0.5 1 2 0.02 0.05 0.1 0.2 0.5 1 2
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
http://onsemi.com
4
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G
ORDERING INFORMATION
Device Package Shipping†
MJD47G 369C 75 Units / Rail
(Pb−Free)
http://onsemi.com
5
MJD47, NJVMJD47T4G, MJD50, NJVMJD50T4G
PACKAGE DIMENSIONS
DPAK
CASE 369C
ISSUE D
NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
4 5. DIMENSIONS D AND E ARE DETERMINED AT THE
L3 Z OUTERMOST EXTREMES OF THE PLASTIC BODY.
D 6. DATUMS A AND B ARE DETERMINED AT DATUM
DETAIL A H PLANE H.
1 2 3
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
GAUGE SEATING c2 0.018 0.024 0.46 0.61
L2 PLANE C PLANE D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L L 0.055 0.070 1.40 1.78
A1
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 905 CW L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for
surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where
personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and
its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
http://onsemi.com MJD47/D
6