VLSI SYSTEM DESIGN

(LAB - TASK = 01)

Programme : B.Tech-ECE Semester : FALL-(2019-20)

Name : Pranav Kumar Course Code : ECE3002

REG-NO. : 17BEC0473 Slot : L15+L16

Faculty : Prof. Jagannadha Naidu K Max. Marks : 10

(NMOS AND PMOS CHARACTERISTICS)

 TASK-1.1
AIM : - To design a N-MOS circuit and plot the I-V characteristics of the MOSFET and
also find the following:-
1) Vth
2) VDS(sat) for different VGS values
3) λ (Channel length modulation coefficient)
4) Vth for different VSB

CIRCUIT-DIAGRAM : - 1.

PLOTS : - 1. ID Vs VDS
2. ID Vs VGS

CIRCUIT-DIAGRAM : - 2. ID Vs VDS (Parametric Analysis)

PLOTS : - 3. ID Vs VDS (Parametric Aanlysis)

4. ID Vs VDS (APPENDING ID VS VGS GRAPH)

CALCULATIONS AND OBSERVATIONS :-

VGS (V) VDS(SAT)

0 0 V
0.3 159.191 mV
0.6 482.123 mV
0.9 826.279 mV
1.2 1.19848 V
For VGS = 0.9 V,
IDS1 = 68.6997 μA , VDS1 = 957.423 mV
IDS1 = 72.539 μA , VDS2 = 1.12647 V

Taking 2 points after intersection,

For VGS = 0.6 V,

IDS1 = 32.79 μA , VDS1 = 820.973 mV
IDS1 = 37.65747 μA , VDS2 = 1.098 V

Using the formula :-

|IDS1|/|IDS2| = (1+λ|VDS1|)/(1+λ|VDS2|)

=>(32.79/37.65747) = (1+λ(823.973 mV))/(1+λ(1.098 V))

=>(1+λ(1.098))(0.87) = 1+λ(0.8209)

=>0.87+λ(0.95526) = 1+λ(0.8209)

=>λ(0.13436) = 0.13

=>λ = 0.9675 (for VGS = 0.6 V).

Also Vth = 98.9426 mV (3. CIRCUIT-DIAGRAM BELOW)

CIRCUIT-DIAGRAM : - 4. (ID VS VSB) FOR VGS = Vg = 1.2 V

PLOTS : - 5. (ID VS VSB)

OBSERVATIONS :-

VTH (mV) VSB (V)

99.2819 mV 0
108.256 mV 0.3
114.53 mV 0.6
118.955 mV 0.9
122.016 mV 1.2

INFERENCE: - The circuit was designed and the output and transfer characteristics
was plotted. It was seen that the value of Vth changes as value of VSB changes.
 TASK-1.2
AIM : - To design a P-MOS circuit and plot the I-V characteristics of the MOSFET and
also find the following:-
1) Vth
2) VDS(sat) for different VGS values
3) λ (Channel length modulation coefficient)
4) Vth for different VSB

CIRCUIT-DIAGRAM : - 1.

PLOTS : - 1. ID Vs VDS
2. ID Vs VGS

CIRCUIT-DIAGRAM : - 2. ID Vs VDS (Parametric Analysis)

PLOTS : - 3. ID Vs VDS (Parametric Aanlysis)

4. ID Vs VDS (APPENDING ID VS VGS GRAPH)

CALCULATIONS AND OBSERVATIONS :-

VGS (V) VDS(SAT)

0 0 V
-0.3 -207.417 mV
-0.6 -520 mV
-0.9 -847.769 mV
-1.2 -1.199 V
Taking 2 points after intersection,

For VGS = -0.6 V,

IDS1 = -10.214 μA , VDS1 = -702.2 mV
IDS1 = -11.925 μA , VDS2 = -998.617 mV

Using the formula :-

|IDS1|/|IDS2| = (1+λ|VDS1|)/(1+λ|VDS2|)

=>(10.214/11.925) = (1+λ(702.2 mV))/(1+λ(998.617 mV))

=>(1+λ(0.9986))(0.85652) = 1+λ(0.7022)

=>0.85652+λ(0.85532) = 1+λ(0.7022)

=>λ(0.15312) = 0.14348

=>λ = 0.937 (for VGS = -0.6 V).

Also Vth = -216.899 mV (3. CIRCUIT-DIAGRAM BELOW)

CIRCUIT-DIAGRAM : - 4. (ID VS VSB) FOR VGS = Vg = -1.2 V

PLOTS : - 5. (ID VS VSB)

OBSERVATIONS :-

VTH (mV) VSB (V)

-217.172 mV 0
-244.931 mV -0.3
-271.875 mV -0.6
-298.474 mV -0.9
-324.918 mV -1.2

INFERENCE: - The circuit was designed and the output and transfer characteristics
was plotted. It was seen that the value of Vth changes as value of VSB changes.