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Electronic Devices Question
Electronic Devices Question
Tutorial - 3
08-09-2017
Determine:
(a) the conductivity type of semiconductor,
(b) the majority carrier concentration, and
(c) the majority carrier mobility
(d) Find the hall coefficient
Q 5. A Si semiconductor is doped with 1015/cm3 of Boron atoms. It is
observed that the steady-state excess carrier concentration
generated in it at room temperature is 1017/cm3. Find out the
electron and hole concentrations at the non-equilibrium
condition. Find and draw the quasi-Fermi energy levels for
both the majority and minority charge carriers. Also, find out
the value of Efn−Efp
Q 6.
An n-type Si sample is doped at 1015 cm-3. Light is shone on it to
create EHPs at 1019 cm-3/s. What is the steady state concentration of
minority carriers, if the lifetime is 100 ns? How long does it take for
the hole concentration to drop 10%, after the light is switched off?