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VRF2933 PDF
VRF2933 PDF
VRF2933MP
50V, 300W, 150MHz
FEATURES
• Improved Ruggedness V(BR)DSS = 170V • 3:1 Load VSWR Capability at Specified Operating Conditions
• 300W with 22dB Typ. Gain @ 30MHz, 50V • Nitride Passivated
• Excellent Stability & Low IMD • Refractory Gold Metallization
• Common Source Configuration • Improved Replacement for SD2933
• Available in Matched Pairs • Thermally Enhanced Package
• RoHS Compliant
Thermal Characteristics
Symbol Characteristic Min Typ Max Unit
RθJC Junction to Case Thermal Resistance 0.27 °C/W
050-4941 Rev G 9 -2010
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Functional Characteristics
Symbol Parameter Min Typ Max Unit
GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W 20 25 dB
ηD f1 = 175MHz, VDD = 50V, IDQ = 250mA, Pout = 300W 50 %
ψ f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W 3:1 VSWR - All Phase Angles No Degradation in Output Power
1. To MIL-STD-1311 Version A, test method 2204B, Two Tone, Reference Each Tone
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
55 30
250μs PULSE
7.5V TEST<0.5 % DUTY
50 CYCLE
25
45 6.5V TJ= -55°C
40 TJ= 25°C
20
ID, DRAIN CURRENT (A)
35 6V
30
5.5V 15
25
20 5V 10
15
10 4.5V 5
4V TJ= 125°C
5
3.5V
0 0
0 5 10 15 20 0 2 4 6 8
V , DRAIN-TO-SOURCE VOLTAGE (V) VGS, GATE-TO-SOURCE VOLTAGE (V)
DS(ON)
FIGURE 1, Output Characteristics FIGURE 2, Transfer Characteristics
1.0E−8 100
BVdss Line
ID, DRAIN CURRENT (V)
Coss
10
Rds(on)
PD Max
1.0E−10
Crss
TJ = 125°C
TC = 75°C
050-4941 Rev G 9 -2010
1.0E−11 1
0 10 20 30 40 50 60 1 10 100 800
0.30
0.20 0.7
0.15 0.5
Note:
PDM
t1
0.10 0.3
t2
t1 = Pulse Duration
0.05 0.1 t
Duty Factor D = 1/t2
0.05 SINGLE PULSE
Peak TJ = PDM x ZθJC + TC
0
10 -5
10 -4
10-3 10-2 10 -1 1.0
TJ (°C) TC (°C)
ZEXT
impedances: Case to sink,
Dissipated Power
sink to ambient, etc. Set to
(Watts)
zero when modeling only
.009 .080 .224 the case to junction.
500 500
Freq=30MHz Freq=65MHz 50V
50V
450 450
400 400
OUTPUT POWER (WPEP)
40V
OUTPUT POWER (WPEP)
350 350
40V
300 300
250 250
200 200
150 150
100 100
50 50
0 0
0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12
Pout, INPUT POWER (WATTS PEP) Pout, INPUT POWER (WATTS PEP)
Figure 6. POUT versus PIN Figure 7. POUT versus PIN
R1 50V
R4 C5 L3 +
Vbias + C9
R2 C3 C12
C4 C10 C11
R3 FB
L2
T2
L1 Output
T1
C8
C2
VRF2933
RF
Input C1
C6 C7
Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values
are marked on the devices per the following table.
VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
A J
4 1 DIM MIN TYP MAX
.125d nom .135 r A 0.225 0.230 0.235
B 0.265 0.270 0.275
B C 0.860 0.865 0.870
5
D 1.130 1.135 1.140
E 0.545 0.550 0.555
G Seating Plane
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.