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SUCCESS TECHNOLOGY

www.shenzhensuccess.com
NPN Silicon Transistor 133DL
General Features Available Package TO-220EW
Planar construction with triple diffused process Application
Low voltage with large current design 110V-120V Fluorescent lamp
Low satutation voltage Electronic ballast
Inter-integrated diode and sourced anti-satutation net
Low switch power loss, High reliability
Good current characteristic
Short switch time
Wide SOA.
Accord with RoHS compliant

Absolute Maximum Ratings Tc=25℃


Item Symbol Value Unit
Collector-Base Voltage VCBO 400 V
Collector-Emitter Voltage VCEO 200 V
Emitter-Base Voltage VEBO 9 V
Collector Current IC 5 A
Total Power Dissipation Ta=25℃ 3 W
PC
Tc=25℃ 50 W
Junction Temperature Tj 150 ℃
Storage Temperature Tstg -55~150 ℃

Electronics Characteristics Tc=25℃


Spec. Limit
Item Symbol Testing Condition Unit
Min Max
Collector-Base Breakdown Voltage BVCBO IC=1mA IE=0 400 V
Collector-Emitter Breakdown Voltage BVCEO IC=10mA IB=0 200 V
Emitter-Base Breakdown Voltage BVEBO IE=1mA IC=0 9 V
Collector-Base Cutoff Current ICBO VCB=400V IE=0 20 µA
Collector–Emitter Cutoff Current ICEO VCE=200V IB=0 20 µA
Emitter-Base Cutoff Current IEBO VEB=9V IC=0 20 µA
Collector-Emitter Saturation Voltage VCEsat IC=2.0A IB=0.4 A 0.5 V
Base-Emitter Saturation Voltage VBEsat IC=2.0A IB=0.4 A 1.5 V
DC Current Gain hFE VCE=5V IC=0.5A 15 30
Fall Time tf 0.8 µs
IC=0.5A(UI9600)
Storage Time ts 1.5 3.0 µs
VCE=10V IC=200mA
Current Gain Bandwidth fT 5 MHz
f=1MHZ

Year/Month 11/11 Page:1/3


SUCCESS TECHNOLOGY
www.shenzhensuccess.com
Typical Characteristics
SOA (DC) PC-T

hFE-IC VCE(sat) -IC

VBE(sat) -IC

Year/Month 11/11 Page:2/3


SUCCESS TECHNOLOGY
www.shenzhensuccess.com

TO-220 EW AKAGE OUTLINE DIMENSIONS

S
Y
TO-220EW
M
Millimeters Inches
B
Min Max Min Max
O
L
A 4.320 4.520 0.170 0.178
A1 1.170 1.370 0.046 0.054
A2 2.450 2.750 0.096 0.108
b 0.710 0.910 0.028 0.036
b1 0.710 0.890 0.028 0.035
b2 1.170 1.370 0.046 0.054
b3 1.170 1.350 0.046 0.053
c 0.350 0.530 0.014 0.021
c1 0.350 0.510 0.014 0.020
D 14.940 15.340 0.588 0.604
D1 8.500 8.900 0.335 0.350
D2 12.200 12.600 0.480 0.496
E 10.000 10.300 0.394 0.406
E1 7.700 8.300 0.303 0.327
e 2.540 REF 0.100 REF
e1 5.080 REF 0.200 REF
H1 6.220 6.420 0.245 0.253
h 0 0.300 0 0.012
L 13.150 13.950 0.518 0.549
L1 — 3.800 — 0.150
L2 — — — —
Q 2.640 2.840 0.104 0.112
ΦP 3.740 3.940 0.147 0.155

Year/Month 11/11 Page:3/3

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