WTC9435

P-Channel Enhancement 3 DRAIN

DRAIN CURRENT
Mode Power MOSFET -5.3 AMPERES
P b Lead(Pb)-Free 1 DRAIN SOURCE VOLTAGE
GATE
-30 VOLTAGE

Features: 2
SOURCE
* Super High Dense Cell Design For Low RDS(on)
RDS(on) < 100mΩ @ VGS = -4.5V 3
* Rugged and Reliable
* Simple Drive Requirement 1
* SOT-23 Package 2

Applications:
SOT-23
* Power Management in Notebook Computer
* Portable Equipment
* Battery Powered System

Maximum Ratings (TA

Rating Symbol Value Unit
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain Current ID -5.3 A

Pulsed Drain Current1 IDM -20 A

Total Power Dissipation (TA=25°C) 2.5

PD W
(TA=75°C) 1.2

Maximum Junction-Case RθJC 24 °C/W

Maximum Junction-Ambient2 RθJA 62.5 °C/W

Operating Junction Temperature Range TJ -55~+150 °C

Storage Temperature Range Tstg -55~+150 °C

Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature
2. 1-in2 2oz Cu PCB board
3. Guaranteed by design; not subject to production testing

Device Marking
WTC9435 = P94

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 WTC9435
Electrical Characteristics (TA=25°C Unless Otherwise Specified)
Characteristic Symbol Min Typ Max Unit

Static
Drain-Source Breakdown Voltage V(BR)DSS
VGS=0V, ID=-250µA -30 - - V

Gate-Source Threshold Voltage VGS (th) V

VDS=VGS, ID=-250µA -1.0 -1.7 -3.0

Gate-Source Leakage Current IGSS

+20V - - +100
- nA
VDS=0V, VGS=-
Zero Gate Voltage Drain Current IDSS
VDS=-24V, VGS=0V
- - -1 µA

Drain-Source On-Resistance
VGS=-4.5V, ID=-4.2A R DS(on) - 70 100 mΩ
VGS=-10V , ID=-5.3A - 50 70
Forward Transconductance gfs
VDS=-10V, ID=-5.3A - 10 - S

Dynamic
Input Capacitance Ciss - 745 -
VDS=-15V, VGS=0V, f=1MHZ
Output Capacitance -
VDS=-15V, VGS=0V, f=1MHZ
Coss 440 - PF
Reverse Transfer Capacitance
Crss - 120 -
VDS=-15V, VGS=0V, f=1MHZ

Switching
Turn-On Delay Time(2)
VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω
td(on) - 9 - nS

Rise Time
tr - 15 - nS
VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω
Turn-O Time t
VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω ) - 75 - nS

Fall Time
tf - 40 - nS
VDD=-15V, ID=-1A, VGEN=-10V, RG=6Ω, RL=15Ω
Total Gate Charge(2)
VDS=-15V, ID=-5.3A,VGS=-10V Qg - 28 - nc

Gate-Source Charge
VDS=-15V, ID=-5.3A,VGS=-10V Qgs - 3 - nc
Gate-Drain Charge
VDS=-15V, ID=-5.3A,VGS=-10V Qgd - 7 - nc

Drain-Source Diode Forward Voltage(2)

VSD - - -1.3 V
VGS=0V, IS=-2.6A

Continuous Source Current (Body Diode) IS - - -2.6 A

Notes: 1. Pulse width limited by Max. junction temperature.

2. Pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Surface mounted on 1 in2 copper pad of FR4 board; 125°C/W when mounted on Min. copper pad.

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 WTC9435

TYPICAL ELECTRICAL CHARACTERISTICS

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SOT-23 Outline Dimension

SOT-23
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
TOP VIEW B C C 2.10 3.00
D 0.85 1.05
D E 0.46 1.00
E
G G 1.70 2.10
H H 2.70 3.10
J 0.01 0.13
K K 0.89 1.10
L 0.30 0.61
L
J M M 0.076 0.25

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