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Semiconductors
Semiconductors
1. Intrinsic Semiconductor.
2. Extrinsic Semiconductor.
a. n-type Semiconductors.
b. p-type Semiconductors.
AEI105.120 1
Intrinsic Semiconductor
• Semiconductor in pure
form is known as Intrinsic
Semiconductor.
Si Si Si
FREE ELECTRON
• Ex. Pure Germanium, Pure
Silicon.
Si Si Si
HOLE
• At room temp. no of
electrons equal to no. of
holes.
Si Si Si
Fig 1.
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Intrinsic semiconductor energy band diagram
Conduction Band
FERMI
Energy in ev
LEVEL
Valence Band
Fig 2.
Fermi level lies in the middle
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Extrinsic
Semiconductor
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Comparison of semiconductors
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(Cont.,)
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Comparison between n-type and p-type
semiconductors
N-type P-type
• Pentavalent impurities • Trivalent impurities are
are added. added.
• Majority carriers are • Majority carriers are
electrons. holes.
• Minority carriers are • Minority carriers are
electrons.
holes.
• Fermi level is near the
• Fermi level is near the
valence band.
conduction band.
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N-type Semiconductor
Pure
As N-type
si
Si
Fig 1.
AEI105.121 to 122 8
N-type Semiconductor
AEI105.121 to 122 9
P-type Semiconductor
Pure
P-type
Ga si
Si
Fig 2.
AEI105.121 to 122 10
P-type Semiconductor
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Carriers in P-type Semiconductor
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P and N type Semiconductors
- - - + + + +
-
- + + + +
- - -
- + + +
- -
Fig 3.
AEI105.121 to 122 13
Comparison of semiconductors
1. Drift Process.
2. Diffusion Process.
AEI105.121 to 122 15
Drift process
A B
CB
VB
Fig 4. V
X=a
Fig 5.
AEI105.121 to 122 17
P and N type Semiconductors
- - - + + + +
-
- + + + +
- - -
- + + +
- -
Fig 1.
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Formation of pn diode
Depletion Region
P N
- - - + + + +
-
- + + + +
- - -
- + + +
- -
Fig 2.
Potential barrier
Vb
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Formation of pn diode
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• On formation of pn junction electrons from n-
layer and holes from p-layer diffuse towards the
junction and recombination takes place at the
junction.
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Formation of pn diode
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Depletion region
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Circuit symbol of pn diode
A K
Fig 3.
• Arrow head indicates the direction of
conventional current flow.
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P-N Junction Diode- Forward Biasing
P N
Potential barrier
Fig. 2 Working of P-N junction
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Forward Bias
• An ext. Battery applied with +ve on p-side, −ve on n-
side.
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Features:
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Current components
P N
Potential barrier
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P-N Junction Diode- Reverse Bias
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• Few hole-electron pairs are created due to thermal
agitation (minority carriers).
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• Further rise in reverse bias causes the collapse of
junction barrier called breakdown of the diode.
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P-N JUNCTION
Fig 1.
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JUNCTION PROPERTIES
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(Contd..)
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V-I Characteristics of P-N Junction Diode
Fig 2.
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(Contd…)
IF(mA)
Forward bias
Breakdown voltage
VR(V) VF(V)
Cutin voltage
Reverse Bias
IR(uA) Fig 3.
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Diode Current
I = I 0 (e − 1)
nVt
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Resistance calculation
IF(mA)
Forward bias
Breakdown voltage
ΔV
If
Vr ΔI
VR(V) VF(V)
Vf
Ir Cutin voltage
Reverse Bias
IR(uA) Fig 4.
AEI105.126 43
Resistance calculation
Forward Resistance
1. Dynamic resistance (rf)= ΔV/ ΔI ..ohms.
Reverse Resistance:
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Diode-Variants
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(contd…)
• Light Emitting Diodes (LED) :
Display
Light source in Fiber optic comm.
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Semiconductor diodes
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(contd…)
Second Standard
AEI105.127 50
(contd..)
Second Letter: For device type and function
A= Diode.
B= Varactor.
C= AF Low Power Transistor.
D= AF Power Transistor.
E= Tunnel Diode.
F= HF Low Power Transistor.
L= HF Power Transistor.
S= Switching Transistor.
R= Thyristor/Triac.
Y= power device.
Z= Zener.
AEI105.127 51
(contd..)
Third Letter: Tolerance
A :±1%.
B :±2%.
C :±5%.
D :±10%.
Examples:
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(contd…)
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Lead Identification:
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Specifications
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Specifications (contd…)
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Applications
• Invented by “C.Zener”.
Anode cathode
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PHOTOS OF ZENER DIODES
K K
A A
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PHOTOS OF ZENER DIODES
In forward bias
Rf
Acts as a
closed
switch.
Ideal Practical
Fig 5. Equivalent circuit in forward bias
AEI105.128 62
EQUIVALENT CIRCUIT
in reverse bias
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EQUIVALENT CIRCUIT
in reverse bias
RZ
For the
voltage Acts as a
above break constant
down voltage voltage
Vz Vz
Vz source
Ideal Practical
Fig 7. Equivalent circuit of zener diode for voltage above Vz
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ZENER BREAK DOWN
AEI105.129 65
ZENER BREAK DOWN MECHANISM
Depletion Region
P N
- - - - + + + + +
-
- - - + + + + +
+
- - -
+ +
- - - - + +
Depletion Region
P N
- - - - + + + + +
-
- - - + + + + +
+
- - -
+ +
- - - - + +
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ZENER BREAK DOWN
AEI105.129 69
AVALANCHE BREAK DOWN
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AVALANCHE BREAKDOWN MECHANISM
Depletion Region
P N
- - - + + + +
-
- - - + + + + +
+
- - -
- + +
- - - + +
Depletion Region
P N
- - - + + + +
-
- - - + + + + +
+
- - -
- + +
- - - + +
AEI105.129 73
AVALANCHE BREAK DOWN
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AVALANCHE BREAK DOWN
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Differences between Zener and Avalanche
break downs.
1. Occurs in heavily doped 1. Occurs in lightly doped
diodes. diodes.
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FORWARD BIAS CHARACTERSTICS
Anode cathode
V
Fig 1. zener diode in forward bias
AEI105.130 78
FORWARD BIAS
CHARACTERSTICS
IF(mA)
VF(V)
Cutin voltage
Fig2. Forward bias charactersticas of zener diode
AEI105.130 79
FORWARD BIAS CHARACTERSTICS
AEI105.130 80
REVERSE BIAS CHARACTERSTICS
Anode cathode
V
Fig 3. Zener diode in Reverse bias
AEI105.130 81
REVERSE BIAS CHARACTERSTICS
ZenerBreakdown
VR(V)
Vz
Reverse Bias
IR (uA)
Fig 4. Reverse Bias characterstics of zener diode
AEI105.130 82
REVERSE BIAS CHARACTERSTICS
AEI105.130 83
VI CHARACTERISTICS
AEI105.130 85
SPECIFICATIONS OF ZENER DIODE
Specifications of 1n746 zener diode.
AEI105.130 86
SPECIFICATIONS OF ZENER DIODE
Specifications of 1n746 zener diode.
AEI105.130 87