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Expt 6 BJT Characteristics (CE Configuration)
Expt 6 BJT Characteristics (CE Configuration)
Components:
Operation:
Procedure:
pg. 2 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
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pg. 3 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
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Expected Graphs: (Note: For Reference only. Projected values might differ)
Input Characteristics
Output Characteristics
(Note: Calculation of h parameters. Determine i) hie, ii) hre and hfe only. For assembling
the circuit, follow the design (Components/specifications) discussed in the laboratory.)
pg. 4 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
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Precautions:
1. While doing the experiment do not exceed the ratings of the transistor. This
may lead to damage the transistor. Download Datasheet prior to assembly.
3. Do not switch ON the power supply unless you have checked the circuit
connections as per the circuit diagram.
4. Make sure while selecting the emitter, base and collector terminals of the
transistor.
Calculations:
1. Input resistance: To obtain input resistance find ΔVBE and ΔIB at constant VCE
on one of the input characteristics. Then Ri = ΔVBE / ΔIB (VCE constant)
2. Output resistance: To obtain output resistance, find ΔIC and ΔVCE at constant
IB. Ro = ΔVCE / ΔIC (IB constant)
Result:
The Input (Ri) and Output resistances (Ro) and of a given transistor are
calculated.
Conclusion:
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pg. 5 Lab. Write-Up for EDC – 1 (RC 2016-17) Compiled by Dr. Samarth Borker, Dept. of E&TC, GEC Farmagudi Goa. 2019
GOA COLLEGE OF ENGINEERING
Viva Questions: