MDD1902 – Single N-Channel Trench MOSFET 100V

MDD1902
Single N-channel Trench MOSFET 100V, 40A, 28mΩ

General Description Features

The MDD1902 uses advanced MagnaChip’s MOSFET  VDS = 100V
Technology, which provides high performance in on-state  ID = 40A @VGS = 10V
resistance, fast switching performance and excellent  RDS(ON)
quality. MDD1902 is suitable device for DC/DC < 28mΩ @VGS = 10V
Converters and general purpose applications. < 31mΩ @VGS = 6.0V

Absolute Maximum Ratings (Tc = 25oC)

Characteristics Symbol Rating Unit
Drain-Source Voltage VDSS 100 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C 40 A
Continuous Drain Current (1) o
ID
TC=100 C 25 A
Pulsed Drain Current IDM 80 A
o
TC=25 C 83
Power Dissipation o
PD W
TC=100 C 33
Single Pulse Avalanche Energy (2) EAS 200 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics
Characteristics Symbol Rating Unit
Thermal Resistance, Junction-to-Ambient RθJA 50 o
(1)
C/W
Thermal Resistance, Junction-to-Case RθJC 1.5

Nov. 2010. Version 1.0 1 MagnaChip Semiconductor Ltd.

 MDD1902 – Single N-Channel Trench MOSFET 100V
Ordering Information
Part Number Temp. Range Package Packing Rohs Status
o
MDD1902RH -55~150 C D-PAK Tape & Reel Halogen Free

Electrical Characteristics (Tc =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 100 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 3.0 4.0
Drain Cut-Off Current IDSS VDS = 80V, VGS = 0V - - 1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1
VGS = 10V, ID = 20A - 21 28
o
Drain-Source ON Resistance RDS(ON) TJ=125 C - 32 40 mΩ
VGS = 6.0V, ID = 20A - 23.5 31
Forward Transconductance gfs VDS = 5V, ID = 20A - 55 - S
Dynamic Characteristics
Total Gate Charge Qg - 39.8 48
VDS = 50V, ID = 20A,
Gate-Source Charge Qgs - 11 - nC
VGS = 10V
Gate-Drain Charge Qgd - 11.2 -
Input Capacitance Ciss - 2087 2505
VDS = 25V, VGS = 0V,
Reverse Transfer Capacitance Crss - 82 - pF
f = 1.0MHz
Output Capacitance Coss - 230 -
Gate Resistance Rg VGS=0V,VDS=0V,F=1MHz - 2.1 2.5 Ω
Turn-On Delay Time td(on) - 10.5
Rise Time tr VDS=50V, VGS=10V, - 27.5
ns
Turn-Off Delay Time td(off) RL=3.2Ω, RGEN=3.2Ω - 38.5
Fall Time tf - 14
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 1A, VGS = 0V - 0.7 1.2 V
Body Diode Reverse Recovery Time trr - 63 76 ns
IF = 20A, dl/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 145 - nC

Note :

1. Surface mounted RF4 board with 2oz. Copper.

2. Starting TJ=25°C, L=1mH, IAS=20A, VDD=50V, VGS=10V

Nov. 2010. Version 1.0 2 MagnaChip Semiconductor Ltd.

 MDD1902 – Single N-Channel Trench MOSFET 100V
100 40

6.0V ~ 10V
80
5.0V
ID, Drain Current[A]

30

RDS(ON) [mΩ ]
60
VGS=6.0V
4.5V

40
20 VGS=10V

4.0V
20

3.5V

0 10
0 1 2 3 4 5 0 10 20 30 40
VDS, Drain-Source Voltage [V] ID [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

2.2 60
Drain-Source On-Resistance [mΩ ]

2.0

1.8
50
RDS(ON), (Normalized)

1.6 VGS=10V
RDS(ON) [mΩ ]

125 ℃

ID=20A
1.4
40
1.2

1.0

30
0.8

0.6 25 ℃

0.4 20
-50 -25 0 25 50 75 100 125 150 4 6 8 10
o
TJ, Junction Temperature [ C] VGS [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

20 10
*Note ; VDS=5.0V

15
0.1

0.01
-IS [A]
ID [A]

10
1E-3

1E-4
5 125 ℃

125 25 ℃
℃
25
1E-5
℃

0 1E-6
0 1 2 3 4 5 0.0 0.2 0.4 0.6 0.8 1.0

VGS [V] -VSD [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Nov. 2010. Version 1.0 3 MagnaChip Semiconductor Ltd.

 MDD1902 – Single N-Channel Trench MOSFET 100V
10 3000
Ciss = Cgs + Cgd (Cds = shorted)
* Note ; ID = 20A Coss = Cds + Cgd
9
Crss = Cgd
2500
8
Ciss
7
2000

Capacitance [pF]
6
VGS [V]

5 1500

4
* Notes ;
1000
3 1. VGS = 0 V
2. f = 1 MHz
2 Coss
500
1 Crss

0 0
0 10 20 30 40 0 5 10 15 20 25 30 35 40
Qg [nC] VDS [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

3 50
10

40
2
10

1 ms 30
ID [A]
ID [A]

1
10 10 ms

20
Operation in This Area 100ms
is Limited by R DS(on)

0
10
DC 10
Single Pulse
Rθ jC=1.5 /W
℃

Ta=25℃

10
-1 0
10
-1
10
0
10
1
10
2
10
3 25 50 75 100 125 150

VDS [V] TC [ ]
℃

Fig.10 Maximum Drain Current vs. Case

Fig.9 Maximum Safe Operating Area
Temperature

1
10
Zθ ja, Normalized Thermal Response [t]

0
10
D=0.5

0.2
10 0.1
-1

0.05
0.02
0.01
10 single pulse
-2
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ Ja* Rθ Ja(t) + Ta
RΘ JC=1.5 /W
℃

-3
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve

Nov. 2010. Version 1.0 4 MagnaChip Semiconductor Ltd.

 MDD1902 – Single N-Channel Trench MOSFET 100V
Package Dimension

D-PAK (TO-252)
Dimensions are in millimeters, unless otherwise specified

Nov. 2010. Version 1.0 5 MagnaChip Semiconductor Ltd.

 MDD1902 – Single N-Channel Trench MOSFET 100V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Nov. 2010. Version 1.0 6 MagnaChip Semiconductor Ltd.