Quasi-one-dimensional states in rippled

graphene
Simeón M. Yaro, X. Cartoixà
Departament d’Enginyeria Electrònica, Universitat Autònoma de Barcelona, Bellaterra, Spain

Summary Properties of Graphene Ab-initio calculations

• We performed first-principles calculation within density-

Graphene is a novel two-dimensional material [1, 2] that, due to its • Hexagonal honeycomb lattice structure. functional theory using the SIESTA and TRANSIESTA code
exceptional mechanical and electronic properties, has attracted a • Sublattice-symmetry. [14], [15].
great deal of attention in the last year. Despite having an extremely
high carrier mobility [3], its straightforward use in the electronics • K - K’ no equivalent. • The unit cell is rectangular as shown in the figure right-below.
-1
2
industry is precluded, among others, by its semimetallic charac- • Presents pz orbitals and sp hibridization for σ-bonds. -1.5
ter. Thus, great efforts have been made in order to open a gap Ky
-2 ky
in graphene and render it a semiconductor. These include adding 10
K S K’
-2.5
Y

an extra dimension of confinement, obtaining graphene nanoribbons 5

M
-3 -X Γ X kx

Energy (eV)
(GNRs) [4], electrostatic patterning [5], chemical decoration [6], etc. K’ K
Kx
10
EF

-3.5 9
One-dimensional states are well known in graphene nano-ribbons 0
8

K K’ -4
and carbon nanotubes; they are of current interest in the scientific EF
7
Energy (eV)

6
-5 -4.5
community due to its potential use in field effect transistors [7], [8]

DOS
5

-5 4

and the excellent mechanical properties of carbon nanotubes [9]. -10 3

-5.5
The possibility of generating ripples and even folded graphene raises 2

1
-15 -6
new properties, such as the presence of a pseudo-magnetic field [10] -X Γ X Y
Wave Vector k
Γ 0
-5 -4 -3 -2 -1 0
Energy (eV)
1 2 3 4 5

and a greater compressive strength [11]. In this line of work, we -20

• The dispersion relation (left) keeps the valleys K and K ’. In the
show the existence of longitudinal quasi-one-dimensional states in
Γ Γ
lower right figure is shows the total density of states (DOS).
graphene ripples (i.e. along the corrugations) with armchair crys- K K’ S K

tallography. In contrast to graphene ribbons and carbon nanotubes,

in these structures there is a dependence of the conductance on the Electronic transport properties
continuous states of graphene and the quantized states in the cor-
rugations. This allows the control of quasi-one-dimensional states
• Two electronic properties are of great interest: its high electron
having high mobility, rapid manufacturing [12] and potential tech-
mobility and the absence of a gap around the Fermi energy.
nological applications.
• The presence of wrinkles and ripples in graphene induces the
presence of pseudo-magnetic fields [10] and midgap states [16],
Graphene pancakes [13] and structures for FETs [2]. [17].

Electronic Transport in Periodic Nanoripple Arrays of Graphene

We studied the electronic transport in periodic Evolution of band structure, total density of states and conductivity in Periodic Nanoripple Arrays of
nanoripple arrays (NRAs) of graphene, where
the orientation of the electrodes is such that the Graphene for a different bending angle.
current is either parallel to the NRAs (see figure
right).
In this work, we report the coexistence of lo-
calized electronic states (characterized by flat
bands) and extended electronic states. These
electronic states are controlled by the nanorip-
ples where the most important parameter is the
bending angle θ. Configuration of electrodes:
NRAs have been synthesized recently (see figure the crystallographic orientation of The electronic band structure indicates the presence of localized states which are coupled with continual
below). Graphene is grown on Cu single-crystal graphene is ”armchair” and the levels. Getting quasi-one-dimensional states in the NRAs, that is observed in the local density of states.
step edges by chemical vapor deposition and af-
electric current is parallel to the
ter transfer onto Si/SiO2 substrates [12]. Electronic Band Structure Total Density of State Local Density of State
NRAs.

Geometrical parameters θ = 45
ο

E-EF = 0.3331
θ◦ Lx(Å) Hz (Å)
DOS

20.0 9.25 1.07

25.0 8.92 1.52 θ = 60
ο

E-EF = 0.3398
30.0 8.52 1.92
DOS

45.0 24.35 10.65

Left: Quasi-periodic nanoripples in 60.0 17.22 12.77 ο
θ = 75
graphene grow by chemical vapor depo- E-EF = 0.1622
75.0 8.91 13.88
DOS

sition. Right: SEM image of submonolayer

graphene coverage on Cu [18]. -1.5 -1 -0.5 0 0.5 1 1.5
E-EF (eV)

Electronic conductivity in NRAs

Conclusion Reference
1.4

• Our calculations suggest the existence of longitudinal quasi-one-

DOS

1.2

1 dimensional and midgap states in graphene ripples. References

E - EF (eV)

0.8
• The electronic states are controlled by the nanoripples where the most [1] A. K. Geim and K. S. Novoselov. Nature Materials (2007), 6:183 - 191
0.6
20
important parameter is the bending angle θ. [2] Novoselov, K. S. et al. Science (2004), 306:666 - 669
16
[3] X. Du, et al. Nature Nanotechnology (2008), 3:491 - 495
G (e / h)

0.4 12
• The quantization of the electronic conductivity in the sublinear region
2

0.2
8
resembles to the quantum Hall effect. It suggests the presence of pseudo- [4] L. Brey and H. A. Fertig, Phys. Rev. B (2006) 73:235411
4

0 0
magnetic field due to the deformation of graphene. [5] J. B. Oostinga et al. Nature Materials (2007) 7:151 - 157
-Χ Γ Χ S Υ Γ -Υ 0 0.2 0.4 0.6 0.8 1 1.2 1.4
E - E F (eV)
[6] X. Dong et al. Phys. Rev. Lett. (2009) 102:135501
[7] X. Wang et al. Phys. Rev. Lett. (2008) 100(20), 206803
Acknowledge
[8] A. Javey et al. Nature (2003) 424:654-657
[9] J.-P. Salvetat et al. Appl. Phys. A (1999) 69, 255-260
We acknowledge financial support by the Spanish Ministerio de Ciencia e
Innovación under Project No. TEC2009-06986 [10] N. Levy et al. Science (2010) 329:544-547
[11] Y. Zheng et al. Nanotechnology (2011) 22:405701
[12] Guang-Xin Ni et al. ACS Nano (2012) 6 (2) 1158-1164
[13] A. K. Geim and P. Kim Scientific American 298 (4), 68-75 (2008)
[14] José M Soler et al. J. Phys.: Condens. Matter 14 2745 2002
Top: The quantization of the electronic conductivity in the sublinear region
[15] Mads Brandbyge et al. Phys. Rev. B (2002) 65, 165401
is in complete agreement with the coupling between the continuous and
[16] T.O. Wehling et al. EPL (2008) 84: 17003
discrete electronic states. For an energy E-EF = 0.7 eV the first flat Band
[17] Ke Xu et al. Nano Lett. (2009) 9:4446-4451
appear, which corresponds to a well defined peak in the DOS and an increase
[18] Ahmet Avsar et al. Nano Lett. (2011) 11 (6) 2363-2368
in conductivity. Bottom: T-dependent sublinear conductivity for parallel
NRA configurations [12].