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    Universal Institute of Engineering & Technology Village Ballopur, Lalru

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    saurabh bali
    This document outlines an exam for an electronics devices and circuits course. It is divided into three sections. Section A contains 4 short answer questions worth 2 marks each. Section B contains 3 longer answer questions worth 4 marks each, and students must answer any 2. Section C contains 2 long answer questions worth 8 marks each, and students must answer only 1. The questions cover topics like operational amplifiers, diodes, field effect transistors, two-port networks, Barkhausen criteria, and negative feedback amplifiers.

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    Universal Institute of Engineering & Technology Village Ballopur, Lalru

    Uploaded by

    saurabh bali
    20 views1 page
    This document outlines an exam for an electronics devices and circuits course. It is divided into three sections. Section A contains 4 short answer questions worth 2 marks each. Section B contains 3 longer answer questions worth 4 marks each, and students must answer any 2. Section C contains 2 long answer questions worth 8 marks each, and students must answer only 1. The questions cover topics like operational amplifiers, diodes, field effect transistors, two-port networks, Barkhausen criteria, and negative feedback amplifiers.

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    MST-2 EDC

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    This document outlines an exam for an electronics devices and circuits course. It is divided into three sections. Section A contains 4 short answer questions worth 2 marks each. Section B contains 3 longer answer questions worth 4 marks each, and students must answer any 2. Section C contains 2 long answer questions worth 8 marks each, and students must answer only 1. The questions cover topics like operational amplifiers, diodes, field effect transistors, two-port networks, Barkhausen criteria, and negative feedback amplifiers.

    Copyright:

    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    Download as doc, pdf, or txt
    20 views1 page

    Universal Institute of Engineering & Technology Village Ballopur, Lalru

    Uploaded by

    saurabh bali
    This document outlines an exam for an electronics devices and circuits course. It is divided into three sections. Section A contains 4 short answer questions worth 2 marks each. Section B contains 3 longer answer questions worth 4 marks each, and students must answer any 2. Section C contains 2 long answer questions worth 8 marks each, and students must answer only 1. The questions cover topics like operational amplifiers, diodes, field effect transistors, two-port networks, Barkhausen criteria, and negative feedback amplifiers.

    Copyright:

    © All Rights Reserved
    Download as DOC, PDF, TXT or read online from Scribd
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    of 1

    Universal Institute of Engineering & Technology

    Village Ballopur, Lalru


    Branch: EE (3rd semester) Time Allowed: 1 ½ Hrs
    Subject: Electronic Devices & Circuit(BTEE-304) Max Marks: 24
    Section – A- All questions are Compulsory.
    Q1 What is OP-AMP?
    Q2 Can two discrete diodes connected back to back will work as a transistor or not?
    Q3 Draw the characteristics of FET?
    Q4 Explain two port networks? (4x2=8marks)
    Section –B Attempt Any Two:-
    Q1 Explain barkhaunsen criteria in detail.
    Q2 Explain Characteristics of an ideal OP-AMP.
    Q3 Explain varactor diode with its characteristics. (2x4=8marks)
    Section –C- Attempt any one:-
    Q1 Explain h Parameters & also draw the equivalent h- Model of all Configurations?
    Q2 a) Derive the relation for gain of negative feedback amplifier.
    b) Explain DEMOSFET with its characteristics. (1x8=8marks)

    Universal Institute of Engineering & Technology


    Village Ballopur, Lalru
    Branch: EE (3rd semester) Time Allowed: 1 ½ Hrs
    Subject: Electronic Devices & Circuit(BTEE-304) Max Marks: 24
    Section – A- All questions are Compulsory.
    Q1 What is OP-AMP?
    Q2 Can two discrete diodes connected back to back will work as a transistor or not?
    Q3 Draw the characteristics of FET?
    Q4 Explain two port networks? (4x2=8marks)
    Section –B Attempt Any Two:-
    Q1 Explain barkhaunsen criteria in detail.
    Q2 Explain Characteristics of an ideal OP-AMP.
    Q3 Explain varactor diode with its characteristics. (2x4=8marks)
    Section –C- Attempt any one:-
    Q1 Explain h Parameters & also draw the equivalent h- Model of all Configurations?
    Q2 a) Derive the relation for gain of negative feedback amplifier.
    b) Explain DEMOSFET with its characteristics. (1x8=8marks)

    Universal Institute of Engineering & Technology


    Village Ballopur, Lalru
    Branch: EE (3rd semester) Time Allowed: 1 ½ Hrs
    Subject: Electronic Devices & Circuit(BTEE-304) Max Marks: 24
    Section – A- All questions are Compulsory.
    Q1 What is OP-AMP?
    Q2 Can two discrete diodes connected back to back will work as a transistor or not?
    Q3 Draw the characteristics of FET?
    Q4 Explain two port networks? (4x2=8marks)
    Section –B Attempt Any Two:-
    Q1 Explain barkhaunsen criteria in detail.
    Q2 Explain Characteristics of an ideal OP-AMP.
    Q3 Explain varactor diode with its characteristics. (2x4=8marks)
    Section –C- Attempt any one:-
    Q1 Explain h Parameters & also draw the equivalent h- Model of all Configurations?
    Q2 a) Derive the relation for gain of negative feedback amplifier.
    b) Explain DEMOSFET with its characteristics. (1x8=8marks)

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