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MFL Nava NDT Level III Tips
MFL Nava NDT Level III Tips
MFL Nava NDT Level III Tips
1) The primary condition which needs to be met to obtain a signal response from the discontinuity
when the MFL, testing of Ferro-Magnetic test piece is magnetized close to the
2) Fig-1, What will be the relative flux leakage level on the surface of the 1x7 Strand Cable-Rope
caused by an outer wire break compared with that caused by an inner wire break ?- Greater
3) What method of magnetization can be used in Flux leakage testing- Permenant Magnet & DC
Spatial & Temporal discretization is used in order to satisfy the governing Hyperbolic partial
MFL-Wire Rope
Blablabla question asked about nearly a 5 line paragraph: but the matter is Longitudinal (Axial
The purpose of Ferrite core used in Pickup coil – Remove the unwanted Eddies /Leakage
Maxwell’s time varying equations including signal displacement current results in 4 types of filed 1)
MFL-Wire rope testing , the Discontinuities are Circumfrential (Circular)Magnetic Flux Leakage
A Spatial-Notch Filter is to remove Strand Wave form component from the original signal
The Annular-Array of Hall sensors around the magnetized wire rope will capture while the sensors
The Hall Sensors detect the- Radial magnetic flux leakage surrounding the rope
The first permanent magnets were made from magnetite, an ore of iron which gets naturally
magnetized by the earth's magnetic field, the headphones for music systems, smaller and more
powerful magnets are required. These magnets are made from a material known as samarium
cobalt(SmCo). Neodymium magnets are widely used in computer hard disks, better materials such as
Alnico (an alloy of Aluminium, Nickel and Cobalt) were used. Permanent Magnets are magnets which
retain magnetism even after the magnetizing field strength is removed. Permanent magnets are used
Two types of MFL-Pipe Testing Thresholds are Internal (ID ) & External (OD)
MFL of Steel tube testing,Shape enhancement, digitization by sample signal as a vector U,in an N
A typical MFL has 32 sensors,each sensor’s signal sampled at the frequency 4KHz=128,000 data per
se cond processed
A MFL system to operate in a real time,a non-trivial implementation with clevercoding hardware used
Prove-Up method or Prove-up station in online MFL-Ultrasonic Thickness Gauging by T/R probe
Two types of MFL Detection errors are False negative & False Positive.
Two types of Electro-Magnetic Fields are Static (MFL) & Dynamic or Time-Varying (ECT)
defects)
between S-N pole; Scan width 250mm,Scan length-15M & scan speed 0.45m/s
Tank floor cleanliness,rougher the surface,higher background noise & reduction in MFL sensitivity
MFL- Critical crack depth Inspection Standards are –API-1995 & ISO1989
Inductive coils are passive sensor devices,based on faraday’s law,in the presence of magnetic field,a
voltage is generated in the coil,& the level of the voltage depends on the number of turns in the coil
Hall sensors are Active-sensor Devices, a solid state device as a part of an electrical circuit and when
passed through a magnetic field,the v alue of the voltage in the electrical circuit varies dependent on
Contrary of MFL-Tank floor scanning, Top side defect signal is Lower Amplitude & Bottom side signal
amplitude is Higher
Tank floor scanning MFL+ECT combination probe design allows to display the same defect signal at
the same time makes it possible to distinguish back surface discontinuities from those on the top
surface only bcoz ECT +MFL signals can be aligned to CONTRAST their difference
Advantage of using MFL-Crawler-A mobile device used for Tank Shell Thickness measurement
When MFL of Tank Bottom Floor,a Cause for significant reduction in the thickness of the floor will
result in some of the MFL being forced in to the AIR around the area of reduction
Discontinuity width or diameter has less effect on the AMPLITUDE of MFL signal than discontinuity
depth
The UNDER-SIDE of tank bottom plates is typically inspected with UT+MFL that can-” See-Through
the plate”
MFL Critical crack depth standard deviation of 25% mean value used in Monte-carlo-simulation
The Hall effect is the deflection of electrons (holes) in an n-type (p-type) semiconductor with current
flowing perpendicular to a magnetic field. The deflection of these charged carriers sets up a voltage,
called the Hall voltage, whose polarity depends on the effective charge of the carrier.
If a current carrying conductor placed in a perpendicular magnetic field, a potential difference will generate in the conductor
which is perpendicular to both magnetic field and current. This phenomenon is called Hall Effect. In solid state physics,
Hall effect is an important tool to characterize the materials especially semiconductors. It directly determines both the sign
and density of charge carriers in a given sample.
the n-type semiconductor, free electrons are the majority carriers and holes are the
minority carriers. That means most of the current in the n-type semiconductor is
conducted by free electrons.
In the p-type semiconductor, holes are the majority carriers and free electrons are the
minority carriers. That means most of the current in the p-type semiconductor is
SHANMUGA.NAVANEETHAN / NDT-LEVEL-III PAGE 4 OF 5
MAGNETIC FLUX LEAKAGE TESTING ASNT-NDT-LEVEL-III
conducted by holes.
Now we get an idea about the p-type and n-type semiconductors. But how can we
identify whether the semiconductor is p-type or n-type.
Free electrons and holes are the very small particles. So we can’t see them directly with
our eyes. But by using Hall Effect we can easily identify whether the semiconductor is a
p-type or n-type.
The free electrons in a semiconductor or conductor always try to flow in a straight path.
However, because of the continuous collisions with the atoms, free electrons slightly
change their direction. But if the applied voltage is strong enough, the free electrons
forcefully follow the straight path. This happens only if no other forces are applied to it in
other direction.
If we apply the force in other direction by using the magnetic field, the free electrons in
the conductor or semiconductor change their direction.