BITS Pilani, Hyderabad Campus

Department of Electrical and Electronics Engineering

Course : Electronic Devices (ECE/EEE/INSTR F214)

Examination : Test 1 (closed book), 1st semester 2016 – 2017 Total marks scored (out of 90)
th
Duration : 16:00 – 17:00 (60 min), Fri 9 Sep 2016
x5- x2+ + =
Full marks : 90 (12 × 5 + 15 + 15)

ID #: NAME (in capital letters):

• All questions must be answered. No specific time limits for answering PART A or B.

• Every correct answer in PART A carries +5 marks and incorrect answer carries -2 marks. Any overwritten/ambiguous
answers will carry 0 mark .

• The correct options for PART A questions written legibly in blue/black ink , capital letters and only in the table provided
will be evaluated.

• PART B answers must be brief, to the point, devoid of any unnecessary statements/theory and written in your answer booklet.

• All the rough work for PART A & B may be worked out on the last pages of your answer booklet.

• This question paper must be tied as the front cover of your answer booklet and submitted along with it at the end of your
examination.

PART A (SET 1)

Ques 1 2 3 4 5 6 7 8 9 10 11 12

Ans

1. You have to design a resistor of 10 kΩ by doping a pure 0.5 mm Si bar with donors so that it can handle a current density of 50
A/cm2 when 5 V is applied across it at 300 K. What is the donor concentration?
(A) 6.5 × 1015 /cm3 (B) 2.3 × 1016 /cm3 (C) 2.3 × 1015 /cm3 (D) 2.3 × 1012 /cm3
q
2 −x/L
2. The solution of Schrödinger wave equation for an electron in a particular situation is given by ψ (x) = L
e . What is the
probability of finding the electron between L4 ≤ x ≤ L
2
?
(A) 0.239 (B) 0.393 (C) 0.865 (D) 1

3. How much donor concentration should you dope in a one-sided junction so that it should be able to withstand a maximum electric
field of |Fmax | = 3 × 105 /cm3 under a reverse bias of 25 V?
(A) 5.2 × 1017 /cm3 (B) 1.16 × 1016 /cm3 (C) 9.95 × 1014 /cm3 (D) 3.88 × 1010 /cm3

4. A particular material has Fermi energy level Ef = 6.25 eV. At what temperature there is a 1% probability that a state 0.3 eV
below the Fermi level will not contain any electron?
(A) 4730 K (B) 0 K (C) 473 K (D) 756.9 K

5. What is the intrinsic carrier concentration of Si at 450 K?

(A) 3.74 × 1013 /cm3 (B) 2.03 × 1013 /cm3 (C) 2.75 × 1010 /cm3 (D) 2495.81 /cm3

6. In a Si bar at 300 K with effective masses for electrons and holes 1.08m0 and 0.56m0 respectively, the intrinsic Fermi energy level
is than the midgap energy level.
(A) none other (B) 12.8 meV higher (C) 12.8 meV lower (D) 8.5 meV lower

7. What is the built-in potential barrier in a Si pn junction diode at 350 K subjected to a forward bias of 0.2 V with acceptor and
donor concentration on either side being 1018 cm3 and 1015 /cm3 respectively? Assume intrinsic electron concentration remains
the same as in room temperature.
(A) 0.68 V (B) 0.88 V (C) 0.75 V (D) 0.55 V

1
 8. What should be the donor concentration of a p+ n junction so that the entire Si bulk of of 2 µm length becomes fully depleted at
a reverse bias of 5 V? Band offset at the junction is 0.6 eV under thermal equilibrium.
(A) 1.8 × 1019 /cm3 (B) 1.6 × 1015 /cm3 (C) 1.9 × 1014 /cm3 (D)1.8 × 1015 /cm3

9. Determine the surface potential at the onset of inversion in a Si MOS device at 300 K in which the bulk is doped with 1016 /cm3
acceptors.
(A) 0.727 V (B)0.697 V (C) 1.454 V (D) 0.954 V

10. Find the built-in potential of a p+ n junction at 300 K which is doped with 1015 /cm3 donors.
(A) Insufficient data (B) 0.29 V (C) 0.85 V (D) 0.27 V

11. What is the maximum allowable Si MOS thickness so that the entire device will remain fully depleted at 300 K? Fermi potential
in the bulk is 0.347 V.
(A) 19 cm (B) 0.2 µm (C) 30 µm (D) 0.3 µm

12. Calculate the junction capacitance of a Si pn junction reverse biased with 5 V at 300 K with acceptor and donor concentration
on either side being 1016 /cm3 and 1015 /cm3 respectively. Built-in potential under thermal equilibrium is 0.635 V.
(A) 7.31 nF/cm2 (B) 3.65 nF/cm2 (C) 10.89 nF/cm2 (D) 3.83 nF/cm2

PART B

13. (i) Starting with the basic Poisson eqn applied on both sides of a pn junction, derive the expression for total depletion width Wd .
(ii) Hence show that the peak electric field at the junction depends on the lowly doped region. [10+5]

14. (i) Starting with the basic Poisson eqn, derive the expression for the total charge stored in the p type semiconductor of an MOS
capacitor.
(ii) Hence show that the maxm depletion width Wd attained before inversion equals the Wd in an n+ p junction. [10+5]

Si data @ 300 K
ni = 1.5 × 1010 /cm3 ; Eg = 1.12 eV; µn = 1350 cm2 /Vs; µp = 480 cm2 /Vs; si = 11.70 ; ox = 3.90 ; 0 = 8.85 × 10−14 F/cm;
q = 1.6 × 10−19 C; NA = 6.02 × 1023 /mol; kB = 1.38 × 10−23 J/K; h = 6.63 × 10−34 Js; m0 = 9.1 × 10−31 kg; φt = kB T /q = 26 mV;

Basic formulas (All symbols have their usual meanings)

h i−1
~2 ∂ 2 ψ (E−Ef )/kB T + 1
~ ∂ψ
j ∂t
= ∗
2m ∂x 2 + V (x, t); f F D (E) = e ; n = Nc e−(Ec −Ef )/kB T = ni e−φf /φt , p = Nv e−(Ef −Ev )/kB T = ni eφf /φt ;
r 1.5
2πm∗
2
  
E −E 2
n kB T
2 2
d|
φf = i q f ; ddxφ2 = − q p − n + Nd+ − Na− ; Wd = 2φq bi N1a + N1d ; N (k) = πk 2 ; Nc = 2 ; E = ~2mk∗ ; Cj = d φd|Q−V


h2 ( bi f )

2
 BITS Pilani, Hyderabad Campus
Department of Electrical and Electronics Engineering

Course : Electronic Devices (ECE/EEE/INSTR F214)

Examination : Test 1 (closed book), 1st semester 2016 – 2017 Total marks scored (out of 90)
th
Duration : 16:00 – 17:00 (60 min), Fri 9 Sep 2016
x5- x2+ + =
Full marks : 90 (12 × 5 + 15 + 15)

ID #: NAME (in capital letters):

• All questions must be answered. No specific time limits for answering PART A or B.

• Every correct answer in PART A carries +5 marks and incorrect answer carries -2 marks. Any overwritten/ambiguous
answers will carry 0 mark .

• The correct options for PART A questions written legibly in blue/black ink , capital letters and only in the table provided
will be evaluated.

• PART B answers must be brief, to the point, devoid of any unnecessary statements/theory and written in your answer booklet.

• All the rough work for PART A & B may be worked out on the last pages of your answer booklet.

• This question paper must be tied as the front cover of your answer booklet and submitted along with it at the end of your
examination.

PART A (SET 2)

Ques 1 2 3 4 5 6 7 8 9 10 11 12

Ans

1. Calculate the junction capacitance of a Si pn junction reverse biased with 5 V at 300 K with acceptor and donor concentration
on either side being 1016 /cm3 and 1015 /cm3 respectively. Built-in potential under thermal equilibrium is 0.635 V.
(A) 7.31 nF/cm2 (B) 3.65 nF/cm2 (C) 10.89 nF/cm2 (D) 3.83 nF/cm2

2. What is the maximum allowable Si MOS thickness so that the entire device will remain fully depleted at 300 K? Fermi potential
in the bulk is 0.347 V.
(A) 19 cm (B) 0.2 µm (C) 30 µm (D) 0.3 µm

3. Find the built-in potential of a p+ n Si junction at 300 K which is doped with 1015 /cm3 donors.
(A) Insufficient data (B) 0.29 V (C) 0.85 V (D) 0.27 V

4. Determine the surface potential at the onset of inversion in a Si MOS device at 300 K in which the bulk is doped with 1016 /cm3
acceptors.
(A) 0.727 V (B)0.697 V (C) 1.454 V (D) 0.954 V

5. What should be the donor concentration of a p+ n junction so that the entire Si bulk of of 2 µm length becomes fully depleted at
a reverse bias of 5 V? Band offset at the junction is 0.6 eV under thermal equilibrium.
(A) 1.8 × 1019 /cm3 (B) 1.6 × 1015 /cm3 (C) 1.9 × 1014 /cm3 (D)1.8 × 1015 /cm3

6. What is the built-in potential barrier in a Si pn junction diode at 350 K subjected to a forward bias of 0.2 V with acceptor and
donor concentration on either side being 1018 cm3 and 1015 /cm3 respectively? Assume intrinsic electron concentration remains
the same as in room temperature.
(A) 0.68 V (B) 0.88 V (C) 0.75 V (D) 0.55 V

7. In a Si bar at 300 K with effective masses for electrons and holes 1.08m0 and 0.56m0 respectively, the intrinsic Fermi energy level
is than the midgap energy level.
(A) none other (B) 12.8 meV higher (C) 12.8 meV lower (D) 8.5 meV lower

8. What is the intrinsic carrier concentration of Si at 450 K?

(A) 3.74 × 1013 /cm3 (B) 2.03 × 1013 /cm3 (C) 2.75 × 1010 /cm3 (D) 2495.81 /cm3

1
 9. A particular material has Fermi energy level Ef = 6.25 eV. At what temperature there is a 1% probability that a state 0.3 eV
below the Fermi level will not contain any electron?
(A) 4730 K (B) 0 K (C) 473 K (D) 756.9 K

10. How much donor concentration should you dope in a one-sided junction so that it should be able to withstand a maximum electric
field of |Fmax | = 3 × 105 /cm3 under a reverse bias of 25 V?
(A) 5.2 × 1017 /cm3 (B) 1.16 × 1016 /cm3 (C) 9.95 × 1014 /cm3 (D) 3.88 × 1010 /cm3
q
2 −x/L
11. The solution of Schrödinger wave equation for an electron in a particular situation is given by ψ (x) = L
e . What is the
probability of finding the electron between L4 ≤ x ≤ L
2
?
(A) 0.239 (B) 0.393 (C) 0.865 (D) 1

12. You have to design a resistor of 10 kΩ by doping a pure 0.5 mm Si bar with donors so that it can handle a current density of 50
A/cm2 when 5 V is applied across it at 300 K. What is the donor concentration?
(A) 6.5 × 1015 /cm3 (B) 2.3 × 1016 /cm3 (C) 2.3 × 1015 /cm3 (D) 2.3 × 1012 /cm3

PART B

13. (i) Starting with the basic Poisson eqn applied on both sides of a pn junction, derive the expression for total depletion width Wd .
(ii) Hence show that the peak electric field at the junction depends on the lowly doped region. [10+5]

14. (i) Starting with the basic Poisson eqn, derive the expression for the total charge stored in the p type semiconductor of an MOS
capacitor.
(ii) Hence show that the maxm depletion width Wd attained before inversion equals the Wd in an n+ p junction. [10+5]

Si data @ 300 K
ni = 1.5 × 1010 /cm3 ; Eg = 1.12 eV; µn = 1350 cm2 /Vs; µp = 480 cm2 /Vs; si = 11.70 ; ox = 3.90 ; 0 = 8.85 × 10−14 F/cm;
q = 1.6 × 10−19 C; NA = 6.02 × 1023 /mol; kB = 1.38 × 10−23 J/K; h = 6.63 × 10−34 Js; m0 = 9.1 × 10−31 kg; φt = kB T /q = 26 mV;

Basic formulas (All symbols have their usual meanings)

h i−1
~2 ∂ 2 ψ (E−Ef )/kB T + 1
~ ∂ψ
j ∂t
= − 2m ∗ ∂x2 + V (x, t); fF D (E) = e ; n = Nc e−(Ec −Ef )/kB T = ni e−φf /φt , p = Nv e−(Ef −Ev )/kB T = ni eφf /φt ;
r 1.5
2πm∗
2
  
E −E 2
n kB T
2 2
d|
φf = i q f ; ddxφ2 = − q p − n + Nd+ − Na− ; Wd = 2φq bi N1a + N1d ; N (k) = πk 2 ; Nc = 2 ; E = ~2mk∗ ; Cj = d φd|Q−V


h2 ( bi f )