Electronic Devices and Circuit Theory

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BJT AC Analysis
Chapter 5
 Ch.5 Summary

BJT Transistor Modeling

A model is an equivalent circuit that represents
the AC characteristics of the transistor.
A model uses circuit elements that approximate
the behavior of the transistor.
There are two models commonly used in small
signal AC analysis of a transistor:
re model
Hybrid equivalent model

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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 Ch.5 Summary

The re Transistor Model

BJTs are basically current-controlled devices; therefore

the re model uses a diode and a current source to
duplicate the behavior of the transistor.

One disadvantage to this model is its sensitivity to the

DC level. This model is designed for specific circuit
conditions.

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

Common-Base Configuration
Input impedance:
26 mV
re = Zi = re
Ie

Output impedance:
Zo ≅ ∞Ω

Voltage gain:
αRL RL
AV = ≅
re re

Current gain:
Ai = −α ≅ −1

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

Common-Emitter Configuration
The diode re model
can be replaced by
the resistor re.

Ie = (β + 1) Ib ≅ βIb

26 mV
re =
Ie

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
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 Ch.5 Summary No se puede mostrar la imagen.
Reinicie el equipo y, a continuac
insertarla de nuevo.

Common-Emitter Configuration
Input impedance:
Zi = βre

Output impedance:
Zo = ro ≅ ∞Ω

Voltage gain:
RL
AV = −
re

Current gain:
Ai = β ro =∞

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

Common-Collector Configuration
Input impedance:
Zi = (β + 1)re

Output impedance:
Zo = re || RE

Voltage gain:
RE
AV =
RE + re

Current gain:
Ai = β + 1

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

The Hybrid Equivalent Model

Hybrid parameters are developed and used for modeling the
transistor. These parameters can be found on a transistor’s
specification sheet:
hi = input resistance
hr = reverse transfer voltage ratio (Vi/Vo)
0
hf = forward transfer current ratio (Io/Ii)
ho = output conductance

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

Simplified General h-Parameter Model

hi = input resistance
hf = forward transfer current ratio (Io/Ii)

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

re vs. h-Parameter Model

Common-Emitter

hie = βre
hfe = βac

Common-Base

hib = re
hfb = −α ≅ −1

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

The Hybrid Model

The hybrid pi model is most useful for analysis

of high-frequency transistor applications.
At lower frequencies the hybrid pi model closely
approximate the re parameters, and can be
replaced by them.

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

Common-Emitter Fixed-Bias
Configuration
The input is applied to the base
The output is taken from the
collector
High input impedance
Low output impedance
High voltage and current gain
Phase shift between input and
output is 180

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

Common-Emitter
Fixed-Bias
Configuration
AC equivalent

re,model
Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

Common-Emitter
Fixed-Bias
Calculations
Zi = RB||β| e
Input
impedance: Zi ≅ βre RE ≥10 βre Io βRB ro
Ai = =
Current gain: Ii (ro + RC )(RB + βre )
Zo = RC||rO
Output Ai ≅ β ro ≥10 RC , R B ≥10 βre
impedance: Zo ≅ RC ro ≥10 RC

Vo (R ||r )
Av = =− C o
Vi re Zi
Voltage gain: Current gain Ai = − AV
Av = −
RC from voltage gain: RC
ro ≥10 RC
re

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary

Common-Emitter Voltage-Divider Bias

re model requires you to

determine , re, and ro.

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved
 Ch.5 Summary
Current gain
Common-Emitter Io βR ′ro
Ai = =
Voltage-Divider Bias I
Ii (ro + RC )(R ′ + βre )
βR ′
Ai = o ≅
Calculations r ≥10R
Ii R ′ + βre o C
Io
Input impedance Output impedance Ai = ≅ β ro ≥10RC , R′≥10 βre
Ii
R ′ = R1 || R2 Zo = RC || ro
Current gain from Av
Zi = R ′ || βre Zo ≅ RC ro ≥10RC Zi
Ai = − Av
RC
Voltage gain
Vo − RC || ro
Av = =
Vi re
Vo R
Av = ≅− C ro ≥10RC
Vi re

Electronic Devices and Circuit Theory © 2013 by Pearson Higher Education, Inc
Boylestad Upper Saddle River, New Jersey 07458 • All Rights Reserved