2N/SST5460 Series

Vishay Siliconix

P-Channel JFETs
2N5460 SST5460
2N5461 SST5461
2N5462 SST5462

PRODUCT SUMMARY
Part Number VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
2N/SST5460 0.75 to 6 40 1 –1
2N/SST5461 1 to 7.5 40 1.5 –2
2N/SST5462 1.8 to 9 40 2 –4

FEATURES BENEFITS APPLICATIONS

D High Input Impedance D Low Signal Loss/System Error D Low-Current, Low-Voltage Amplifiers
D Very Low Noise D High System Sensitivity D High-Side Switching
D High Gain: AV = 80 @ 20 mA D High-Quality Low-Level Signal D Ultrahigh Input Impedance
D Low Capacitance: 1.2 pF Typical Amplification Pre-Amplifiers

DESCRIPTION
The 2N/SST5460 series are p-channel JFETs designed to The 2N series, TO-226AA (TO-92), and SST series, TO-236
provide all-around performance in a wide range of amplifier (SOT-23), plastic packages provide low cost options, and are
and analog switch applications. available in tape-and-reel for automated assembly, (see
Packaging Information).

TO-226AA
(TO-92)
TO-236
(SOT-23)
S 1
SST5460 (B0)*
2N5460 D 1 SST5461 (B1)*
2N5461 SST5462 (B2)*
D 2 3 G
2N5462
*Marking Code for TO-236
S 2
G
3
Top View
Top View

ABSOLUTE MAXIMUM RATINGS

Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 V Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 150_C Notes
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C a. Derate 2.8 mW/_C above 25_C

Document Number: 70262 www.vishay.com

S-04030—Rev. D, 04-Jun-01 9-1
2N/SST5460 Series
Vishay Siliconix

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits
2N/SST5460 2N/SST5461 2N/SST5462

Parameter Symbol Test Conditions Typa Min Max Min Max Min Max Unit

Static
Gate-Source
V(BR)GSS IG = 10 mA , VDS = 0 V 55 40 40 40
Breakdown Voltage
V
Gate-Source Cutoff Voltage VGS(off) VDS = –15 V, ID = –1 mA 0.75 6 1 7.5 1.8 9

Saturation Drain Currentb IDSS VDS = –15 V, VGS = 0 V –1 –5 –2 –9 –4 –16 mA

VGS = 20 V, VDS = 0 V 0.003 5 5 5 nA

Gate Reverse Current IGSS
TA = 100_C 0.0003 1 1 1 mA

Gate Operating Current IG VDG = –20 V, ID = –0.1 mA 3

pA
Drain Cutoff Current ID(off) VDS = –15 V, VGS = 10 V –5

ID = –0.1 mA 1.3 0.5 4

Gate-Source Voltage VGS VDS = –15 V ID = –0.2 mA 2.3 0.8 4.5

ID = –0.4 mA 3.8 1.5 6 V

Gate-Source
VGS(F) IG = –1 mA , VDS = 0 V –0.7
Forward Voltage

Dynamic
Common-Source
gfs 1 4 1.5 5 2 6 mS
Forward Transconductance
VDS = –15 V, VGS = 0 V
Common-Source f = 1 kHz
gos 75 75 75 mS
Output Conductance

Common-Source 2N 4.5 7 7 7
Reverse Transfer Ciss
Capacitance SST 4.5

Common-Source
Reverse Transfer Crss VDS = –15 V, VGS = 0 V 1.2 pF
Capacitance f = 1 MHz

2N 1.5 2 2 2
Common-Source
Coss
Output Capacitance SST 1.5

2N 15 115 115 115

Equivalent Input VDS = –15 V, VGS = 0 V nV⁄
en
Noise Voltage f = 100 Hz SST 15 √Hz
√

VDS = –15 V, VGS = 0 V 2N 0.2 2.5 2.5 2.5

Noise Figure NF W
f = 100 Hz, RG = 1 MW dB
BW = 1 Hz SST 0.2

Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. PSCIB
b. Pulse test: PW v300 ms duty cycle v2%.

www.vishay.com Document Number: 70262

9-2 S-04030—Rev. D, 04-Jun-01
 2N/SST5460 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Drain Current and Transconductance On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage vs. Gate-Source Cutoff Voltage
–20 5 1000 100

rDS(on) – Drain-Source On-Resistance ( Ω )

gfs – Forward Transconductance (mS)
IDSS – Saturation Drain Current (mA)

g os– Output Conductance ( mS)

–16 800 80

gfs
–12 600 60
IDSS rDS gos
2.5

–8 400 40

–4 gfs @ VDS = –15 V, VGS = 0 V 200 20

rDS @ ID = –100 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
gos @ VDS = –15 V, VGS = 0 V
f = 1 kHz
f = 1 kHz
0 0 0 0
0 2 4 6 8 10 0 2 4 6 8 10

VGS(off) – Gate-Source Cutoff Voltage (V) VGS(off) – Gate-Source Cutoff Voltage (V)

Output Characteristics Output Characteristics

–2 –10
VGS(off) = 1.5 V
VGS = 0 V VGS(off) = 3 V

–1.6 0.2 V –8
I D – Drain Current (mA)

I D – Drain Current (mA)

–1.2 0.4 V –6 VGS = 0 V

0.6 V 0.5 V
–0.8 –4
1.0 V
0.8 V
–0.4 –2 1.5 V
1.0 V
2.0 V

0 0
0 –4 –8 –12 –16 –20 0 –4 –8 –12 –16 –20

VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)

Output Characteristics Output Characteristics

–0.5 –2
VGS = 0 V
VGS(off) = 1.5 V 0.4 V VGS(off) = 3 V

0.6 V 0.5 V
–0.4 VGS = 0 V –1.6
1.0 V
I D – Drain Current (mA)

I D – Drain Current (mA)

0.2 V 0.8 V
–0.3 –1.2
1.5 V

–0.2 –0.8

1.0 V 2.0 V

–0.1 –0.4
1.2 V 2.5 V

0 0
0 –0.2 –0.4 –0.6 –0.8 –1 0 –0.2 –0.4 –0.6 –0.8 –1

VDS – Drain-Source Voltage (V) VDS – Drain-Source Voltage (V)

Document Number: 70262 www.vishay.com

S-04030—Rev. D, 04-Jun-01 9-3
2N/SST5460 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Transfer Characteristics Transfer Characteristics

–5 –10
VGS(off) = 1.5 V VDS = –15 V VGS(off) = 3 V VDS = –15 V

–4 –8
I D – Drain Current (mA)

I D – Drain Current (mA)

–3 –6 TA = –55_C

TA = –55_C
–2 –4 25_C
25_C

–1 –2
125_C 125_C

0 0
0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5

VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

On-Resistance vs. Drain Current Gate Leakage Current

1000 10 nA
TA = 25_C
rDS(on) – Drain-Source On-Resistance ( Ω )

–5 mA
800 1 nA
TA = 125_C
I G – Gate Leakage

VGS(off) = 1.5 V
600 100 pA –1 mA
IGSS @ 125_C

3V
–0.1 mA
400 10 p A –5 mA
TA = 25_C
4V
200 1 pA IGSS @ 25_C

0 0.1 pA
–0.1 –1 –10 0 –10 –20 –30 –40 –50

ID – Drain Current (mA) VDG – Drain-Gate Voltage (V)

Transconductance vs. Gate-Source Voltage Transconductance vs. Gate-Source Voltage

5 5
VGS(off) = 1.5 V VDS = –15 V VGS(off) = 3 V VDS = –15 V
f = 1 kHz f = 1 kHz
gfs – Forward Transconductance (mS)

gfs – Forward Transconductance (mS)

4 4
TA = –55_C

3 TA = –55_C 3 25_C

2 25_C 2
125_C

1 1
125_C

0 0
0 0.4 0.8 1.2 1.6 2 0 1 2 3 4 5

VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

www.vishay.com Document Number: 70262

9-4 S-04030—Rev. D, 04-Jun-01
 2N/SST5460 Series
Vishay Siliconix

TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)

Common-Source Forward Transconductance
Circuit Voltage Gain vs. Drain Current vs. Drain Current
100 10
VGS(off) = 3 V

VGS(off) = 1.5 V

gfs – Forward Transconductance (µS)

80
A V – Voltage Gain

TA = –55_C
60 VGS(off) = 3 V

1 25_C
40 125_C

20 VDS = –15 V
Assume VDD = –15 V, VDS = –5 V f = 1 kHz
g fs R L 10 V
AV + RL +
1 ) R Lg os ID
0 0.1
–0.01 –0.1 –1 –0.1 –1 –10
ID – Drain Current (mA) ID – Drain Current (mA)

Common-Source Input Capacitance Common-Source Reverse Feedback Capacitance

vs. Gate-Source Voltage vs. Gate-Source Voltage
10 5
f = 1 MHz f = 1 MHz
C rss – Reverse Feedback Capacitance (pF)

8
C iss – Input Capacitance (pF)

2.5

4
–5 V

–5 V
2
–15 V
–15 V

0 0
0 4 8 12 16 20 0 4 8 12 16 20
VGS – Gate-Source Voltage (V) VGS – Gate-Source Voltage (V)

Equivalent Input Noise Voltage vs. Frequency Output Conductance vs. Drain Current
100 20
VDS = –15 V VGS(off) = 3 V

16
gos – Output Conductance (µS)
Hz

TA = –55_C
en – Noise Voltage nV /

ID = –0.1 mA
12

10 25_C
ID = –1 mA
8

125_C
4 VDS = –15 V
f = 1 kHz

0
1
10 100 1k 10 k 100 k –0.1 –1 –10
f – Frequency (Hz) ID – Drain Current (mA)

Document Number: 70262 www.vishay.com

S-04030—Rev. D, 04-Jun-01 9-5