NTD20P06L, NTDV20P06L

Power MOSFET
−60 V, −15.5 A, Single P−Channel, DPAK

Features
• Withstands High Energy in Avalanche and Commutation Modes
• Low Gate Charge for Fast Switching http://onsemi.com
• AEC Q101 Qualified − NTDV20P06L
ID MAX
• These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS RDS(on) TYP (Note 1)
Applications −60 V 130 mW @ −5.0 V −15.5 A
• Bridge Circuits
• Power Supplies, Power Motor Controls P−Channel
• DC−DC Conversion D

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter Symbol Value Unit G
Drain−to−Source Voltage VDSS −60 V
Gate−to−Source Continuous VGS $20 V S
Voltage
Non−Repetitive tp v10 ms VGSM $30
MARKING DIAGRAMS
Continuous Steady State TA = 25°C ID −15.5 A 4
Drain Current 4 Drain
(Note 1)
Power Dissipa- Steady State TA = 25°C PD 65 W 1 2

AYWW

P06LG
T20
tion (Note 1) 3
Pulsed Drain tp = 10 ms IDM $50 A DPAK
Current CASE 369C
STYLE 2 2
Operating Junction and Storage Temperature TJ, −55 to °C 1 3
Drain
TSTG 175 Gate Source

Single Pulse Drain−to−Source Avalanche EAS 304 mJ 4

4 Drain
Energy (VDD = 25 V, VGS = 5 V, IPK = 15 A,
L = 2.7 mH, RG = 25 W)
AYWW

P06LG
Lead Temperature for Soldering Purposes TL 260 °C
T20

(1/8” from case for 10 s)

1
THERMAL RESISTANCE RATINGS 2
3
Parameter Symbol Max Unit IPAK/DPAK
CASE 369D
Junction−to−Case (Drain) RqJC 2.3 °C/W 1 2 3
STYLE 2
Junction−to−Ambient – Steady State (Note 1) RqJA 80 Gate Drain Source

Junction−to−Ambient – Steady State (Note 2) RqJA 110

20P06L Device Code
Stresses exceeding Maximum Ratings may damage the device. Maximum A = Assembly Location
Ratings are stress ratings only. Functional operation above the Recommended Y = Year
Operating Conditions is not implied. Extended exposure to stresses above the WW = Work Week
Recommended Operating Conditions may affect device reliability. G = Pb−Free Package
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.412 in sq.) ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.

© Semiconductor Components Industries, LLC, 2011 1 Publication Order Number:

August, 2011 − Rev. 6 NTD20P06L/D
 NTD20P06L, NTDV20P06L

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Parameter Symbol Test Condition Min Typ Max Units
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −60 −74 V
Drain−to−Source Breakdown Voltage V(BR)DSS/TJ −64 mV/°C
Temperature Coefficient
Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25°C −1.0 mA
VDS = −60 V TJ = 150°C −10
Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = −250 mA −1.0 −1.5 −2.0 V
Gate Threshold Temperature Coefficient VGS(TH)/TJ 3.1 mV/°C
Drain−to−Source On Resistance RDS(on) VGS = −5.0 V, ID = −7.5 A 0.130 0.150 W
VGS = −5.0 V, ID = −15 A 0.143
Forward Transconductance gFS VDS = −10 V, ID = −7.5 A 11 S
Drain−to−Source On−Voltage VDS(on) VGS = −5.0 V, TJ = 25°C −1.2 V
ID = −7.5 A TJ = 150°C −1.9
CHARGES AND CAPACITANCES
Input Capacitance CISS 740 1190 pF
Output Capacitance COSS VGS = 0 V, f = 1 MHz, VDS = −25 V 207 300
Reverse Transfer Capacitance CRSS 66 120
Total Gate Charge QG(TOT) 15 26 nC
Gate−to−Source Charge QGS VGS = −5.0 V, VDS = −48 V, 4.0
ID = −18 A
Gate−to−Drain Charge QGD 7.0
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time td(ON) 11 20 ns
Rise Time tr VGS = −5.0 V, VDD = −30 V, 90 180
Turn−Off Delay Time td(OFF) ID = −15 A, RG = 9.1 W 28 50
Fall Time tf 70 135
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage VSD TJ = 25°C 1.5 2.5 V
VGS = 0 V, IS = −15 A
TJ = 150°C 1.3
Reverse Recovery Time tRR 60 ns
Charge Time ta VGS = 0 V, dIS/dt = 100 A/ms, 39
Discharge Time tb IS = −12 A 21
Reverse Recovery Charge QRR 0.13 nC
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures

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 NTD20P06L, NTDV20P06L

TYPICAL PERFORMANCE CURVES

(TJ = 25°C unless otherwise noted)

40 40
VGS = −10 V VGS = −6 V
35 TJ = −55°C
VGS = −5.5 V
VGS = −9 V
−ID, DRAIN CURRENT (A)

−ID, DRAIN CURRENT (A)

30 30
VGS = −5 V
VGS = −8 V
25 VGS = −7 V TJ = 25°C TJ = 125°C
VGS = −4.5 V
20 20
VGS = −4 V
15
VGS = −3.5 V
10 10
VGS = −3 V
5
TJ = 25°C VDS w 10 V
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VDS, GATE−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)

RDS(on), DRAIN−TO−SOURCE RESISTANCE

0.5 0.25
0.45 VGS = −5 V 0.225 TJ = 25°C

0.4 0.2
0.35 0.175
0.3 0.15
TJ = 125°C VGS = −5 V
0.25 0.125
(W)

0.2 0.1 VGS = −10 V

0.15 TJ = 25°C 0.075

0.1 TJ = −55°C 0.05

0.05 0.025

0 0
0 5 10 15 20 25 30 0 3 6 9 12 15 18 21 24
−ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current
and Temperature and Gate Voltage

2 10000
RDS(on), DRAIN−TO−SOURCE RESISTANCE

VGS = 0 V
1.8 ID = −7.5 A
1.6 VGS = −5 V
1000 TJ = 150°C
1.4
−ID, LEAKAGE (nA)
(NORMALIZED)

1.2
TJ = 125°C
1 100
0.8
0.6
10
0.4
0.2
0 1
−50 −25 0 25 50 75 100 125 150 5 10 15 20 25 30 35 40 45 50 55 60
TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current
Temperature versus Voltage

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 NTD20P06L, NTDV20P06L

2400
2200 VDS = 0 V VGS = 0 V TJ = 25°C
2000
Ciss

C, CAPACITANCE (pF)
1800
1600
1400
1200 Crss
1000
Ciss
800
600
Coss
400
200 Crss
0
−10 −5 0 5 10 15 20 25

−VGS −VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
Figure 7. Capacitance Variation

7.5 60
−VGS, GATE−TO−SOURCE VOLTAGE

VDS, DRAIN−TO−SOURCE VOLTAGE

ID = −15 A TJ = 25°C
6.25 50

5.0 QG 40
VDS
3.75 VGS 30
(V)

(V)
Qgs QGD

2.5 20

1.25 10

0 0
0 4 8 12 16
Qg, TOTAL GATE CHARGE (nC)

Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge

1000 20
VDD = −30 V VGS = 0 V
ID = −15 A TJ = 25°C
−IS, SOURCE CURRENT (A)

VGS = −5 V 15
100 tR
t, TIME (nS)

tF
10
td(off)
10
td(on) 5

1 0
1 10 100 0 0.25 0.5 0.75 1 1.25 1.5 1.75
Rg, GATE RESISTANCE (W) −VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus
versus Gate Resistance Current

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 NTD20P06L, NTDV20P06L

350

EAS, SINGLE PULSE DRAIN−TO−SOURCE

1000
VGS = −15 V ID = −15 A
Single Pulse 300
−ID, DRAIN CURRENT (A)

AVALANCHE ENERGY (mJ)

TC = 25°C
100 250
100
200
10
1
150
10 ms
100
1 dc
RDS(on) Limit
50
Thermal Limit
Package Limit
0.1 0
0.1 1 10 100 25 50 75 100 125 150
−VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature
Rqjc(°C/W), EFFECTIVE TRANSIENT THERMAL RESPONSE

10

D = 0.5
1
0.2
0.1
0.05
0.1
0.02

0.01
Single Pulse
0.01
0.000001 0.00001 0.0001 0.001 0.01 0.1 1

t, TIME (s)
Figure 13. Thermal Response

ORDERING INFORMATION
Device Package Shipping†
NTD20P06LG 75 Units / Rail
NTD20P06LT4G DPAK 2500 / Tape & Reel
(Pb−Free)
NTDV20P06LT4G 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.

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 NTD20P06L, NTDV20P06L

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C−01
ISSUE D

NOTES:
C 1. DIMENSIONING AND TOLERANCING PER ASME
A Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
E A 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-
MENSIONS b3, L3 and Z.
b3 B c2 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
4 5. DIMENSIONS D AND E ARE DETERMINED AT THE
L3 Z OUTERMOST EXTREMES OF THE PLASTIC BODY.
D 6. DATUMS A AND B ARE DETERMINED AT DATUM
DETAIL A H PLANE H.
1 2 3
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
L4 A 0.086 0.094 2.18 2.38
b2 A1 0.000 0.005 0.00 0.13
b c b 0.025 0.035 0.63 0.89
b2 0.030 0.045 0.76 1.14
e 0.005 (0.13) M C H b3 0.180 0.215 4.57 5.46
c 0.018 0.024 0.46 0.61
GAUGE SEATING c2 0.018 0.024 0.46 0.61
L2 PLANE C PLANE D 0.235 0.245 5.97 6.22
E 0.250 0.265 6.35 6.73
e 0.090 BSC 2.29 BSC
H 0.370 0.410 9.40 10.41
L
A1 L 0.055 0.070 1.40 1.78
L1 L1 0.108 REF 2.74 REF
L2 0.020 BSC 0.51 BSC
DETAIL A L3 0.035 0.050 0.89 1.27
ROTATED 905 CW L4 −−− 0.040 −−− 1.01
Z 0.155 −−− 3.93 −−−

STYLE 2:
SOLDERING FOOTPRINT* PIN 1. GATE
2. DRAIN
6.20 3.00 3. SOURCE
4. DRAIN
0.244 0.118
2.58
0.102

5.80 1.60 6.17

0.228 0.063 0.243

SCALE 3:1 ǒinches

mm Ǔ

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.

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 NTD20P06L, NTDV20P06L

PACKAGE DIMENSIONS

IPAK
CASE 369D−01
ISSUE C

B C NOTES:
1. DIMENSIONING AND TOLERANCING PER
V R E ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.

INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
Z A 0.235 0.245 5.97 6.35
A B 0.250 0.265 6.35 6.73
S C 0.086 0.094 2.19 2.38
1 2 3
D 0.027 0.035 0.69 0.88
E 0.018 0.023 0.46 0.58
−T− F 0.037 0.045 0.94 1.14
SEATING G 0.090 BSC 2.29 BSC
PLANE K H 0.034 0.040 0.87 1.01
J 0.018 0.023 0.46 0.58
K 0.350 0.380 8.89 9.65
R 0.180 0.215 4.45 5.45
J S 0.025 0.040 0.63 1.01
F V 0.035 0.050 0.89 1.27
H
Z 0.155 −−− 3.93 −−−
D 3 PL
STYLE 2:
G 0.13 (0.005) M T PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN

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7