3/7/2013

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Large Signal Equivalent Circuit

Ideal, back to this

Operating in Saturation
point later

Figure 5.15 Large-signal equivalent-circuit model of an n-channel MOSFET operating in the saturation

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

Finite Output Resistance

Channel width
modulation

1 ' W  2
• As vDS increases, the channel pinch off moves iD  kn  Vov
away from the drain (L gets smaller). 2 L
• Voltage across the channel remains vov

• A voltage drop of vDS – vov appears across the
small depletion region
1 ' W  2
• This voltage accelerates the electrons that i
reach the drain (increases current) D  k n  Vov (1  v DS )
2 L
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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1
 i  1 ' W  2
ro   D 
 v DS  vGS constant
iD  k n  Vov (1  v DS )
2 L
1
 k' W 
ro   n (VGS  Vt ) 2 
 2 L 
1 V
ro   A
I D I D

iD = 0 when vDS =-1/= -VA

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

Large Signal Equivalent Circuit
More realistic equivalent
circuit

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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PMOS

PMOS vs. NMOS

PMOS

NMOS

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G D

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

PMOS
Cut-off

v SG  Vtp
Saturation

v DG  Vtp
v SD  vOV

Triode

v DS  vOV
vGD  Vt
Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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NMOS vs. PMOS

CMOS

The vast majority of IC’s

Small and low power consumption

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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EXAMPLE
Vtp = -1 V, Kp’=60 µA/v2, W/L=10

Figure E5.7

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

Example
• Find Rs and Rd such that
• Id=0.4 mA, VD=+0.5 V
• Vt=0.7 V, µnCox=100µA/V2
• L=1µm, W=32µm.

Figure 5.21 Circuit for Example 5.3.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

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Find the voltages and currents

Vtn=1 V, Kn(W/L)=1 mA/V2

Figure 5.24 (a) Circuit for Example 5.6. (b) The circuit with some of the analysis details shown.

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.

Figure E5.15

Microelectronic Circuits, Sixth Edition Sedra/Smith Copyright © 2010 by Oxford University Press, Inc.