Fuji Discrete Package IGBT n Outline Drawing

n Features
• Square RBSOA
• Low Saturation Voltage
• Less Total Power Dissipation
• Minimized Internal Stray Inductance

n Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply

n Maximum Ratings and Characteristics n Equivalent Circuit

• Absolute Maximum Ratings ( Tc=25°C)

Items Symbols Ratings Units
Collector-Emitter Voltage VCES 600 V
Gate -Emitter Voltage VGES ± 20 V
DC Tc= 25°C IC 25 58
Collector Current DC Tc=100°C IC 100 30 A
1ms Tc= 25°C IC PULSE 232
IGBT Max. Power Dissipation PC 220 W
FWD Max. Power Dissipation PC 120 W
Operating Temperature Tj +150 °C
Storage Temperature Tstg -40 ∼ +150 °C
Mounting Screw Torque 70 Nm

• Electrical Characteristics ( at Tj=25°C )

Items Symbols Test Conditions Min. Typ. Max. Units
Zero Gate Voltage Collector Current ICES VGE=0V VCE=600V 1.0 mA
Gate-Emitter Leackage Current IGES VCE=0V VGE=± 20V 20 µA
Gate-Emitter Threshold Voltage VGE(th) VGE=20V IC=30mA 5.5 8.5
V
Collector-Emitter Saturation Voltage VCE(sat) VGE=15V IC=30A 3.0
Input capacitance Cies VGE=0V 1900
Output capacitance Coes VCE=10V 400 pF
Reverse Transfer capacitance Cres f=1MHz 100
tON VCC=300V 1.2
Turn-on Time
tr IC=30A 0.6 µs
tOFF VGE=±15V 1.0
Turn-off Time
Switching Time tf RG=82Ω 0.35
tON VCC=300V 0.16
Turn-on Time
tr IC=30A 0.11
µs
tOFF VGE=+15V 0.30
Turn-off Time
tf RG=8Ω 0.35
Diode Forward On-Voltage VF IF=30A VGE=0V 3.0 V
Reverse Recovery Time trr IF=30A, VGE=-10V, di/dt=100A/µs 300 ns

• Thermal Characteristics
Items Symbols Test Conditions Min. Typ. Max. Units
Rth(j-c) IGBT 0.56
Thermal Resistance °C/W
Rth(j-c) Diode 1.04
 Collector Current vs. Collector-Emitter Voltage Collector Current vs. Collector-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
120 120

V GE = 2 0 V 1 5 V V GE = 2 0 V
100 100
[A]

[A]
15V
80 80
C

C
12V
Collector Current : I

Collector Current : I
12V
60 60

40 40
10V 10V

20 20

8V 8V
0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6

Collector-Emitter Voltage : V CE [V] Collector-Emitter Voltage : V CE [V]

Collector-Emitter Voltage vs. Gate-Emitter Voltage Collector-Emitter Voltage vs. Gate-Emitter Voltage
T j= 2 5 ° C T j= 1 2 5 ° C
12 12
[V]

[V]

10 10
CE
CE

8 8
Collector-Emitter Voltage : V
Collector-Emitter Voltage : V

6 6

4 4
IC = IC =

60A 60A
2 30A 2 30A
15A 15A

0 0
0 5 10 15 20 25 0 5 10 15 20 25

Gate-Emitter Voltage : V GE [V] Gate-Emitter Voltage : V GE [V]

Switching Time vs. Collector Current Switching Time vs. Collector Current
V CC = 3 0 0 V , R G =8.2 Ω , V GE = ± 1 5 V , T j= 2 5 ° C V CC = 3 0 0 V , R G =8.2 Ω , V GE= ± 1 5 V , T j= 1 2 5 ° C
1000 1000

t off
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]

t off tf

tf t on
100 100
on

on

t on
Switching Time : t

Switching Time : t

tr

tr

10 10
0 10 20 30 40 50 0 10 20 30 40 50

Collector Current : I C [A] Collector Current : I C [A]

 Switching Time vs. R G Switching Time vs. R G
V CC =300V, I C = 3 0 A , V GE = ± 1 5 V , T j= 2 5 ° C V CC =300V, I C = 3 0 A , V GE = ± 1 5 V , T j= 1 2 5 ° C
, t r, t off , t f [nsec]

, t r, t off , t f [nsec]
t on
1000 1000
t off t off

tf
tr
on

on
Switching Time : t

Switching Time : t
tf t on
100 100
tr

10 10
0 100 0 100

Gate Resistance : R G [ Ω ] Gate Resistance : R G [ Ω ]

Capacitance vs. Collector-Emitter Voltage Dynamic Input Characteristics

T j= 2 5 ° C T j= 2 5 ° C
10 500 25

V C C =200V, 300V, 400V

[V]

400 20
, C res , C ies [nF]

C ies

[V]
CE

GE
1
Collector-Emitter Voltage : V

Gate-Emitter Voltage : V
300 15
oes

C oes
Capacitance : C

200 10
0,1
C res

100 5

0,01 0 0
0 5 10 15 20 25 30 35 0 20 40 60 80 100 120 140 160
Gate Charge : Q G [nQ]
Collector-Emitter Voltage : V CE [V]

Reverse Recovery Time vs. Forward Current Reverse Recovery Current vs. Forward Current
-di -di
V R= 2 0 0 V , / dt= 1 0 0 A / µ s e c V R= 2 0 0 V , / dt = 1 0 0 A / µ s e c
300 10

250
[nsec]

[A]

8
125°C
rr

125°C
rr

Reverse Recovery Current : I

200
Reverse Recovery Time : t

150

4 25°C
25°C
100

2
50

0 0
0 10 20 30 40 50 0 10 20 30 40 50

Forward Current : I F [A] Forward Current : I F [A]

 Reverse Biased Safe Operating Area Typical Short Circuit Capability
+ V GE = 1 5 V , - V GE <15V, T j<125°C, R G >8.2 Ω V CC = 4 0 0 V , R G =8.2 Ω , T j= 1 2 5 ° C
70 500 50

t SC I SC
60
400 40

[A]

[µs]
50
[A]

SC

SC
C

300 30

Short Circuit Current : I

40
Collector Current : I

Short Circuit Time : t

30
200 20

20

100 10
10

0 0 0
0 100 200 300 400 500 600 700 5 10 15 20 25
Gate Voltage : V GE [V]
Collector-Emitter Voltage : V CE [V]

-di
Reverse Recovery Characteristics vs. / dt
Forward Voltage vs. Forward Current
V R =200V, I F = 3 0 A , T j= 1 2 5 ° C
120 400 20

T j= 1 2 5 ° C 2 5 ° C
100
[nsec]

I rr

[A]
300 15

rr
[A]

rr

80

Reverse Recovery Current : I

Reverse Recovery Time : t
F
Forward Current : I

60 200 10

40

100 t rr 5

20

0 0 0
0 1 2 3 4 5 6 0 100 200 300 400 500 600
-di
Forward Voltage : V F [V] / dt [A/µsec]

Transient Thermal Resistance

Thermal Resistance : Rth(j-c) [°C/W]

0
FWD
10

IGBT

-1
10

-2
10
-4 -3 -2 -1 0
10 10 10 10 10

P u l s e W i d t h : P W [sec]
 Switching losses
(Eon, Eoff vs. IC)

IC [A]

Test Circuit Switching waveforms

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