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  • Akinori Koukitu 1997 Jpn. J. Appl. Phys. 36 L750

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    Gagneet Kaur
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    This article analyzes the thermodynamics of molecular beam epitaxy (MBE) growth of GaN, InN, and AlN thin films. The authors develop thermodynamic models to calculate equilibrium vapor pressures and decomposition rates of metalorganic source materials during MBE. Their models predict film growth conditions needed for high quality epitaxial layers, such as substrate temperature ranges where the metalorganic sources decompose fully without decomposing the growing film. The thermodynamic analysis provides a theoretical understanding of MBE growth conditions for these important semiconductor materials.

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    Molecular epitaxy of materials

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    This article analyzes the thermodynamics of molecular beam epitaxy (MBE) growth of GaN, InN, and AlN thin films. The authors develop thermodynamic models to calculate equilibrium vapor pressures and decomposition rates of metalorganic source materials during MBE. Their models predict film growth conditions needed for high quality epitaxial layers, such as substrate temperature ranges where the metalorganic sources decompose fully without decomposing the growing film. The thermodynamic analysis provides a theoretical understanding of MBE growth conditions for these important semiconductor materials.

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    © All Rights Reserved
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    12 views5 pages

    Akinori Koukitu 1997 Jpn. J. Appl. Phys. 36 L750

    Uploaded by

    Gagneet Kaur
    This article analyzes the thermodynamics of molecular beam epitaxy (MBE) growth of GaN, InN, and AlN thin films. The authors develop thermodynamic models to calculate equilibrium vapor pressures and decomposition rates of metalorganic source materials during MBE. Their models predict film growth conditions needed for high quality epitaxial layers, such as substrate temperature ranges where the metalorganic sources decompose fully without decomposing the growing film. The thermodynamic analysis provides a theoretical understanding of MBE growth conditions for these important semiconductor materials.

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    © All Rights Reserved
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    of 5

    Japanese Journal of Applied

    Physics

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    To cite this article: Akinori Koukitu and Hisashi Seki 1997 Jpn. J. Appl. Phys. 36 L750 Epitaxy of GaN on SiC Substrates
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    This content was downloaded from IP address 103.37.200.166 on 10/05/2019 at 07:09

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