BSM 100 GB 120 DN2

IGBT Power Module

• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate

Type VCE IC Package Ordering Code

BSM 100 GB 120 DN2 1200V 150A HALF-BRIDGE 2 C67076-A2107-A70

Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE 1200 V
Collector-gate voltage VCGR
RGE = 20 kΩ 1200
Gate-emitter voltage VGE ± 20
DC collector current IC A
TC = 25 °C 150
TC = 80 °C 100
Pulsed collector current, tp = 1 ms ICpuls
TC = 25 °C 300
TC = 80 °C 200
Power dissipation per IGBT Ptot W
TC = 25 °C 800
Chip temperature Tj + 150 °C
Storage temperature Tstg -55 ... + 150

Thermal resistance, chip case RthJC ≤ 0.16 K/W

Diode thermal resistance, chip case RthJCD ≤ 0.3
Insulation test voltage, t = 1min. Vis 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56

Semiconductor Group 1 Mar-29-1996

 BSM 100 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Static Characteristics
Gate threshold voltage VGE(th) V
VGE = VCE, IC = 4 mA 4.5 5.5 6.5
Collector-emitter saturation voltage VCE(sat)
VGE = 15 V, IC = 100 A, Tj = 25 °C - 2.5 3
VGE = 15 V, IC = 100 A, Tj = 125 °C - 3.1 3.7
Zero gate voltage collector current ICES mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 1.5 2
VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 6 -
Gate-emitter leakage current IGES nA
VGE = 20 V, VCE = 0 V - - 200

AC Characteristics
Transconductance gfs S
VCE = 20 V, IC = 100 A 54 - -
Input capacitance Ciss nF
VCE = 25 V, VGE = 0 V, f = 1 MHz - 6.5 -
Output capacitance Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 1 -
Reverse transfer capacitance Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz - 0.5 -

Semiconductor Group 2 Mar-29-1996

 BSM 100 GB 120 DN2

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.

Switching Characteristics, Inductive Load at Tj = 125 °C

Turn-on delay time td(on) ns
VCC = 600 V, VGE = 15 V, IC = 100 A
RGon = 6.8 Ω - 130 260
Rise time tr
VCC = 600 V, VGE = 15 V, IC = 100 A
RGon = 6.8 Ω - 80 160
Turn-off delay time td(off)
VCC = 600 V, VGE = -15 V, IC = 100 A
RGoff = 6.8 Ω - 400 600
Fall time tf
VCC = 600 V, VGE = -15 V, IC = 100 A
RGoff = 6.8 Ω - 70 100

Free-Wheel Diode
Diode forward voltage VF V
IF = 100 A, VGE = 0 V, Tj = 25 °C - 2.3 2.8
IF = 100 A, VGE = 0 V, Tj = 125 °C - 1.8 -
Reverse recovery time trr µs
IF = 100 A, VR = -600 V, VGE = 0 V
diF/dt = -1000 A/µs, Tj = 25 °C - 0.3 -
Reverse recovery charge Qrr µC
IF = 100 A, VR = -600 V, VGE = 0 V
diF/dt = -1000 A/µs
Tj = 25 °C - 4 -
Tj = 125 °C - 12 -

Semiconductor Group 3 Mar-29-1996

 BSM 100 GB 120 DN2

Power dissipation Safe operating area

Ptot = ƒ(TC) IC = ƒ(VCE)
parameter: Tj ≤ 150 °C parameter: D = 0, TC = 25°C , Tj ≤ 150 °C

900 10 3

tp = 14.0µs
W A

Ptot 700 IC
10 2

100 µs
600

500
10 1
1 ms
400

10 ms
300

10 0
200
DC

100

0 10 -1
0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 10 V
TC VCE

Collector current Transient thermal impedance IGBT

IC = ƒ(TC) Zth JC = ƒ(tp)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C parameter: D = tp / T

10 0
160

K/W
A

IC ZthJC
120 10 -1

100

80 10 -2
D = 0.50
0.20
60
0.10
0.05
40 10 -3
0.02
single pulse
0.01
20

0 10 -4
-5 -4 -3 -2 -1 0
0 20 40 60 80 100 120 °C 160 10 10 10 10 10 s 10
TC tp

Semiconductor Group 4 Mar-29-1996

 BSM 100 GB 120 DN2

Typ. output characteristics Typ. output characteristics

IC = f (VCE) IC = f (VCE)
parameter: tp = 80 µs, Tj = 25 °C parameter: tp = 80 µs, Tj = 125 °C

200 200

A A
17V 17V
160 15V 160 15V
IC 13V IC 13V
11V 11V
140 9V 140 9V
7V 7V
120 120

100 100

80 80

60 60

40 40

20 20

0 0
0 1 2 3 V 5 0 1 2 3 V 5
VCE VCE

Typ. transfer characteristics

IC = f (VGE)
parameter: tp = 80 µs, VCE = 20 V

200

IC 160

140

120

100

80

60

40

20

0
0 2 4 6 8 10 V 14
VGE

Semiconductor Group 5 Mar-29-1996

 BSM 100 GB 120 DN2

Typ. gate charge Typ. capacitances

VGE = ƒ(QGate) C = f (VCE)
parameter: IC puls = 100 A parameter: VGE = 0 V, f = 1 MHz

20 10 2

V
nF
VGE 16 C

14 600 V 800 V
10 1

12 Ciss

10

8
10 0
Coss
6

4 Crss

0 10 -1
0 100 200 300 400 500 nC 650 0 5 10 15 20 25 30 V 40
QGate VCE

Reverse biased safe operating area Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C ICsc = f(VCE) , Tj = 150°C
parameter: VGE = 15 V parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH

2.5 12

ICpuls/IC ICsc/IC

8
1.5

1.0

0.5
2

0.0 0
0 200 400 600 800 1000 1200 V 1600 0 200 400 600 800 1000 1200 V 1600
VCE VCE

Semiconductor Group 6 Mar-29-1996

 BSM 100 GB 120 DN2

Typ. switching time Typ. switching time

I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω par.: VCE = 600 V, VGE = ± 15 V, IC = 100 A

10 3 10 4

ns
t tdoff t
ns

10 3 tdoff
tdon
tr
10 2
tdon
tf tr

10 2
tf

10 1 10 1
0 50 100 150 A 250 0 10 20 30 40 Ω 60
IC RG

Typ. switching losses Typ. switching losses

E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 6.8 Ω par.: VCE = 600V, VGE = ± 15 V, IC = 100 A

60 40

mWs
Eon Eon
mWs
50
E E
45 30

40
25
35

30 20

25
15 Eoff
20
Eoff
15 10

10
5
5
0 0
0 50 100 150 A 250 0 10 20 30 40 Ω 60
IC RG

Semiconductor Group 7 Mar-29-1996

 BSM 100 GB 120 DN2

Forward characteristics of fast recovery Transient thermal impedance Diode

reverse diode IF = f(VF) Zth JC = ƒ(tp)
parameter: Tj parameter: D = tp / T

200 10 0

A K/W

IF 160 ZthJC
10 -1
140

120
Tj=125°C Tj=25°C
100 10 -2
D = 0.50

80 0.20
0.10
60 0.05
10 -3 single pulse
0.02
40
0.01
20

0 10 -4
-5 -4 -3 -2 -1 0
0.0 0.5 1.0 1.5 2.0 V 3.0 10 10 10 10 10 s 10
VF tp

Semiconductor Group 8 Mar-29-1996

 BSM 100 GB 120 DN2

Circuit Diagram

Package Outlines
Dimensions in mm
Weight: 420 g

Semiconductor Group 9 Mar-29-1996

This datasheet has been download from:

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