, One..

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 (212)227-6005
U.S.A. FAX: (973) 376-8960

Advanced Power MOSFET IRFZ44

FEATURES
BVDSS : 60V
» Avalanche Rugged Technology
» Rugged Gate Oxide Technology f^DS(on) = 0.02412
» Lower Input Capacitance
ID = 50 A
» Improved Gate Charge
» Extended Safe Operating Area
« 175°C Operating Temperature TO-220
» Lower Leakage Current: 10uA(Max.) @ VDS = 60V
» Lower RDS(ON): 0.020Q (Typ.)

LGate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 60 V
Continuous Drain Current (TC=25°C) 50
ID A
Continuous Drain Current (TC=100°C) 35.4
'DM Drain Current-Pulsed (1) 200 A
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulsed Avalanche Energy (2) 857 mJ
IAR Avalanche Current (1) 50 A
EAR Repetitive Avalanche Energy (1) 12.6 mJ
dv/dt Peak Diode Recovery dv/dt (3) 5.5 V/ns
Total Power Dissipation (TC=25°C) 126 W
PD
Linear Derating Factor 0.84 W/°C
Operating Junction and
Tj , TSTG -55 to +175
Storage Temperature Range
Maximum Lead Temp, for Soldering °C
TL 300
Purposes, 1/8. from case for 5-seconds

Thermal Resistance
Symbol Characteristic Typ. Max. Units
RBJC Junction-to-Case - 1.19
ROCS Case-to-Sink 0.5 - °C/W
RBJA Junction-to-Ambient - 62.5

NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by N.I Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verity that datasheets are current before placing orders.

Quality Semi-Conductors
 N-CHANNEL
IRFZ44 POWER MOSFET

Electrical Characteristics (TC=25°C unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 60 — _ V V GS =OV,l L) =250uA
ABV/ATj Breakdown Voltage Temp. Coeff. — 0.063 — v/°c !D=250uA See Fig 7
^GS(th) Gate Threshold Voltage 2.0 — 4.0 V VDS=5V,lD=250nA
Gate-Source Leakage , Forward „ __ 100 VOS=20V
'GSS nA
Gate-Source Leakage , Reverse — — -100 V GS =-20V
— — 10 VDS=60V
'DSS Drain-to-Source Leakage Current uA
- - 100 VDS=48V,TC=150°C
Static Drain-Source
RoS(on) - - 0.024 n VGS=10V,ID=25A (4)
On-State Resistance
9f» Forward Transconductance - 32.6 - u Vns=30V,ln=25A (4)
Ciss Input Capacitance - 1770 2300
GS -UV,V DS -ZOV,T -IMnZ
C0ss Output Capacitance - 590 680 PF
Crss Reverse Transfer Capacitance - 220 255
'd(on) Turn-On Delay Time -- 20 40
DD-OUV,ID-OUA,
tr Rise Time - 16 40
ns G-9.1ii
td(off) Turn-Off Delay Time - 68 140
See Fig 13 (4) (5)
tf Fall Time - 70 140

Q9 Total Gate Charge - 64 83 VDS=48V,VGS=10V,

Qgs Gate-Source Charge -- 12.3 - nC ID=50A
Qgd Gate-Drain (. Miller. ) Charge - 23.6 - See Fig 6& Fig 12 (4) (5)

Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Units Test Condition
Is Continuous Source Current - - 50 Integral reverse pn-diode
A
ISM Pulsed-Source Current (1) — - 200 in the MOSFET
VSD Diode Forward Voltage (4) — - 1.8 V TJ=25°C,ls=50A,Vr,s=OV
trr Reverse Recovery Time — 85 - ns Tj=25°C,lF=50A
Qrr Reverse Recovery Charge - 0.24 - uC diF/dt=100A/|is (4)

Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=0.4mH, IAS=50A, VDD=25V, RG=27ii, Starting Tj=25°C
(3) I S D <50A, di/dt<350A/us, V DD < BV DSS , Starting Tj=25°C
(4) Pulse Test : Pulse Width = 250ns, Duty Cycle < 2%
(5) Essentially Independent of Operating Temperature