The TD304BH is an N-channel enhancement mode MOSFET with a drain-source breakdown voltage of 30V, on-state resistance of 9mΩ at 10V gate-source voltage, and continuous drain current of 57A. It is packaged in a TO-252 case and provides maximum ratings of 30V for drain-source voltage, ±20V for gate-source voltage, and 57A of continuous drain current.
The TD304BH is an N-channel enhancement mode MOSFET with a drain-source breakdown voltage of 30V, on-state resistance of 9mΩ at 10V gate-source voltage, and continuous drain current of 57A. It is packaged in a TO-252 case and provides maximum ratings of 30V for drain-source voltage, ±20V for gate-source voltage, and 57A of continuous drain current.
The TD304BH is an N-channel enhancement mode MOSFET with a drain-source breakdown voltage of 30V, on-state resistance of 9mΩ at 10V gate-source voltage, and continuous drain current of 57A. It is packaged in a TO-252 case and provides maximum ratings of 30V for drain-source voltage, ±20V for gate-source voltage, and 57A of continuous drain current.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 TC = 25 °C 57 Continuous Drain Current ID TC = 100 °C 37 1 A Pulsed Drain Current IDM 150 Avalanche Current IAS 29 Avalanche Energy L = 0.1mH EAS 40 mJ TC = 25 °C 54 Power Dissipation PD W TC = 100 °C 21 Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 2.3 °C / W 1 Pulse width limited by maximum junction temperature.
REV 1.2 1 2015/1/28
TD304BH N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS PARAMETER SYMBOL TEST CONDITIONS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.2 1.6 2.8 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA VDS = 24V, VGS = 0V 1 Zero Gate Voltage Drain Current IDSS mA VDS = 20V, VGS = 0V , TJ = 125 °C 10 Drain-Source On-State VGS = 4.5V, ID = 20A 11.5 18 RDS(ON) mΩ Resistance1 VGS = 10V, ID = 20A 7.5 9 Forward Transconductance1 gfs VDS = 5V, ID = 20A 35 S DYNAMIC Input Capacitance Ciss 900 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 185 pF Reverse Transfer Capacitance Crss 120 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω 2 Qg Total Gate Charge 22 2 VDS = 0.5V(BR)DSS, VGS = 10V Gate-Source Charge Qgs 5 nC ID = 20A 2 Qgd Gate-Drain Charge 6.5 2 td(on) Turn-On Delay Time 15 2 tr Rise Time VDS = 15V, 25 nS Turn-Off Delay Time 2 td(off) ID @ 20A, VGS = 10V, RGEN = 6Ω 60 Fall Time2 tf 18 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 57 A 1 VSD IF = 20A, VGS = 0V Forward Voltage 1.3 V Reverse Recovery Time trr 23 nS IF = 20A, dlF/dt = 100A / mS Reverse Recovery Charge Qrr 15 nC 1 Pulse test : Pulse Width 300 msec, Duty Cycle 2%. 2 Independent of operating temperature.