The Czochralski process is a method of crystal growth used to obtain single crystals of

semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum,
silver, gold), salts, and synthetic gemstones. The process is named after Polish scientist Jan
Czochralski, who discovered the method in 1916 while investigating the crystallization rates of
metals.

The most important application may be the growth of large cylindrical ingots, or boules, of
single crystal silicon. Other semiconductors, such as gallium arsenide, can also be grown by this
method, although lower defect densities in this case can be obtained using variants of the
Bridgman-Stockbarger technique.

Production of Czochralski silicon

High-purity, semiconductor-grade silicon (only a few parts per million of impurities) is melted
down in a crucible, which is usually made of quartz. Dopant impurity atoms such as boron or
phosphorus can be added to the molten intrinsic silicon in precise amounts in order to dope the
silicon, thus changing it into n-type or p-type extrinsic silicon. This influences the electronic
properties of the silicon. A precisely oriented seed crystal, mounted on a rod, is dipped into the
molten silicon. The seed crystal's rod is very slowly pulled upwards and rotated at the same time.
By precisely controlling the temperature gradients, rate of pulling and speed of rotation, it is
possible to extract a large, single-crystal, cylindrical ingot from the melt. Occurrence of
unwanted instabilities in the melt can be avoided by investigating and visualizing the
temperature and velocity fields during the crystal growth process.[1] This process is normally
performed in an inert atmosphere, such as argon, and in an inert chamber, such as quartz.

The Czochralski (CZ) crystal growth process is the most important method for manufacturing crystals [1]. In the CZ
process a crystal is pulled out vertically from a heated pool of melt contained in a cylindrical crucible. This process
has the ability of meeting the stringent requirements for purity and crystallographic perfection [2]. The properties of
the crystallized solid depend on the physical processes occurring during its formation [3]. The melt flow in the crucible
during the crystal growth influences the quality of the grown crystal, impinges on microdefects and impacts striations
appearing in it [2,4].

In CZ process there are several mechanisms of fluid motion of the melt in crucible. Gradients of density give rise to
natural convection, while the rotation of the crystal during withdrawal causes fluid to spin out centrifugally. An
additional mechanism of forced convection is possible rotation of the crucible, as well as the moving boundary of
melt-gas interface. Flows driven by surface tension gradients may also exist [3]. The velocity and temperature field
throughout the Czochralski melt are subject to significant and comparable amounts of both natural and forced
convection [5]. Along this line, some previous studies reported flow patterns and time-dependent variations of
axisymmetric melt flow condition in the crucible.