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MBR20200CT

Switch‐mode
Power Rectifier
Dual Schottky Rectifier

Features and Benefits http://onsemi.com


• Low Forward Voltage
SCHOTTKY BARRIER
• Low Power Loss/High Efficiency
• High Surge Capacity RECTIFIER
• 175°C Operating Junction Temperature 20 AMPERES, 200 VOLTS
• 20 A Total (10 A Per Diode Leg)
• This is a Pb-Free Device* 1
2, 4
Applications 3
• Power Supply − Output Rectification
• Power Management 4

• Instrumentation
Mechanical Characteristics TO−220
• Case: Epoxy, Molded CASE 221A
PLASTIC
• Epoxy Meets UL 94, V−0 @ 0.125 in STYLE 6
• Weight: 1.9 Grams (Approximately)
1
• Finish: All External Surfaces Corrosion Resistant and Terminal 2
3
Leads are Readily Solderable
• Lead Temperatures for Soldering Purposes: 260°C Max. for MARKING DIAGRAM
10 Seconds
• ESD Rating: Human Body Model 3B
Machine Model C

AYWW
MBR20200CTG
AKA

A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
AKA = Diode Polarity

ORDERING INFORMATION

Device Package Shipping


*For additional information on our Pb−Free strategy and soldering details, please MBR20200CTG TO−220 50 Units / Rail
download the ON Semiconductor Soldering and Mounting Techniques
(Pb−Free)
Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2014 1 Publication Order Number:


September, 2014 − Rev. 10 MBR20200CT/D
MBR20200CT

MAXIMUM RATINGS (Per Leg)


Rating Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM 200 V
Working Peak Reverse Voltage VRWM
DC Blocking Voltage VR
Average Rectified Forward Current (TC = 161°C) Per Leg IF(AV) 10 A
Per Package 20

Peak Repetitive Forward Current per Leg IFRM 20 A


(Square Wave, 20 kHz, TC = 158°C)

Non-Repetitive Peak Surge Current IFSM 150 A


(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)

Peak Repetitive Reverse Surge Current (2.0 ms, 1.0 kHz) IRRM 1.0 A
Storage Temperature Range Tstg −65 to +175 °C
Operating Junction Temperature TJ −65 to +175 °C
Voltage Rate of Change (Rated VR) dv/dt 10,000 V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS
Characteristic Condition Symbol Value Unit
Maximum Thermal Resistance, Junction-to-Case Minimum Pad RqJC 2.0 °C/W
Maximum Thermal Resistance, Junction-to-Ambient Minimum Pad RqJA 60.0 °C/W

ELECTRICAL CHARACTERISTICS (Per Leg)


Characteristic Symbol Min Typical Max Unit
Maximum Instantaneous Forward Voltage (Note 1) VF V
(IF = 10 A, TJ = 25°C) − 0.80 0.90
(IF = 10 A, TJ = 125°C) − 0.66 0.80
(IF = 20 A, TJ = 25°C) − 0.89 1.00
(IF = 20 A, TJ = 125°C) − 0.76 0.90
Maximum Instantaneous Reverse Current (Note 1) IR mA
(Rated dc Voltage, TJ = 25°C) − 0.0002 1.0
(Rated dc Voltage, TJ = 125°C) − 0.4 50
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.

DYNAMIC CHARACTERISTICS (Per Leg)


Characteristic Symbol Value Unit
Capacitance (VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz) CT 500 pF
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.

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MBR20200CT

100 100
IF, INSTANTANEOUS FORWARD

IF, INSTANTANEOUS FORWARD


175°C
150°C 175°C
CURRENT (A)

CURRENT (A)
125°C 150°C
25°C
10 10
125°C

100°C 100°C

25°C
1 1
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, INSTANTANEOUS VOLTAGE (V) VF, INSTANTANEOUS VOLTAGE (V)

Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage

IF(AV), AVERAGE FORWARD CURRENT (A)


10,000 20
18
TJ = 150°C
1,000 16 dc
IR , REVERSE CURRENT ( μ A)

TJ = 125°C 14
100
TJ = 100°C 12
SQUARE
10 10
8
1 6
4
0.1
TJ = 25°C 2
0
0.01
0 20 40 60 80 100 120 140 160 180 200 140 145 150 155 160 165 170 175 180

VR, REVERSE CURRENT (V) TC, CASE TEMPERATURE (°C)


Figure 3. Typical Reverse Current (Per Leg) Figure 4. Current Derating, Case, Per Leg

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MBR20200CT

IF(AV), AVERAGE FORWARD CURRENT (A)


20 26

PF(AV), AVERAGE POWER DISSIPATION


RJA = 16°C/W 24 TJ = 175°C
18
RJA = 60°C/W 22
16 No Heatsink
20 SQUARE
14 18 WAVE
12 16
dc 14
10

(w)
12
8 SQUARE 10 dc
WAVE 8
6
6
4
4
2 2
0 0
0 25 50 75 100 125 150 175 0 2 4 6 8 10 12 14 16 18 20 22 24 26
TA, AMBIENT TEMPERATURE (°C) IF(AV), AVERAGE FORWARD CURRENT (A)

Figure 5. Current Derating, Ambient, Per Leg Figure 6. Forward Power Dissipation

500

TJ = 25°C
400
C, CAPACITANCE (pF)

300

200

100

0
1 2 5 10 20 50 70 100
VR, REVERSE VOLTAGE (V)

Figure 7. Typical Capacitance (Per Leg)


R(t), TRANSIENT THERMAL RESISTANCE

10

D = 0.5
1
0.2
0.1
0.05
0.1
0.01
P(pk)
SINGLE PULSE t1
0.01
t2
DUTY CYCLE, D = t1/t2
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)
Figure 8. Thermal Response Junction-to-Case

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MBR20200CT

PACKAGE DIMENSIONS

TO−220
CASE 221A−09
ISSUE AH

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
−T− PLANE 2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T ALLOWED.
S
INCHES MILLIMETERS
4 DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.415 9.66 10.53
C 0.160 0.190 4.07 4.83
1 2 3 U D 0.025 0.038 0.64 0.96
F 0.142 0.161 3.61 4.09
H G 0.095 0.105 2.42 2.66
H 0.110 0.161 2.80 4.10
K J 0.014 0.024 0.36 0.61
Z K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
D Z --- 0.080 --- 2.04
N
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE

ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable
copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION


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