Aswan University

Aswan Faculty of Engineering,

Electrical Engineering Department

Bjt characterstics

Edited by:
Eslam ahmed fathy

Presented to:

Eng: rehab
Theoretical background
Equipment:
Instruments:
2 DC power supply
2 Digital multi-meters
Components:
Breadboard
BJT Transistor (any general purpose type)
5 Resistors (three 1kΩ, 10kΩ, 13kΩ and 100Ω)
Connection Leads
Background:
The input characteristics of BJT are a plot between, IB and VBE at different
values of VCE, while the output characteristics illustrate the relationship
between Ic and VCE at different values of IB, as shown in Fig. 1. Note that
the IB = 0A the curve represents the operation of the transistor when it is in
cutoff.
I. EXPERIMENTAL RESULTS
A. Results

 Intput Characteristics
VCC = 1
VBE(V) 0 0.1 0.2 0.3 0.41 0.5 0.6 0.7 0.8
IB(µA) 0 0 0 0 0 0 0 0 0.1

VCC = 2
VBE(V) 0 0.1 0.2 0.3 0.41 0.5 0.6 0.7 0.8
IB(µA) 0 0 0 0 0 0 0 0.1 0.2

VCC = 5
VBE(V) 0 0.1 0.2 0.3 0.41 0.5 0.6 0.7 0.8
IB(µA) 0 0 0 0 0 0 0 0 0

 Output Characteristics
IB = 0
VCE(V) 0 0.2 0.4 0.6 0.8 1 3 5 7
IC(µA) 0 0 0 0 0 0 0 0 0

IB = 10 µA
 VCE(V) 0 0.2 0.4 0.6 0.8 1 3 5 7
IC(µA) .1 .2 .6 .8 .12 .18 .26 .32 .38

IB = 20 µA
VCE(V) 0 0.2 0.4 0.6 0.8 1 3 5 7
IC(µA) 0 0.03 .07 .13 .17 .21 .66 1.08 1.12

IB = 30 µA
VCE(V) 0 0.2 0.4 0.6 0.8 1 3 5 7
IC(µA) 0 0.03 .07 .13 .17 .21 .66 1.12 1.58

IB = 40 µA
VCE(V) 0 0.2 0.4 0.6 0.8 1 3 5 7
IC(µA) 0 0.03 .07 .13 .17 .21 .66 1.12 1.58

IB = 50 µA
VCE(V) 0 0.2 0.4 0.6 0.8 1 3 5 7
IC(µA) 0 .05 .08 .19 .17 .22 .68 1.13 1.6

B. Comments
 When VBE>0.7 , IB=0 …. And <.or = IB increased (in but) .
 When VCE increased ICE increased with liner motion , in the known point the current will sutorated.

IV. SIMULATION RESULTS

A. Results

 Intput Characteristics
 .

Output Characteristics
 B. Comments
 The results are equal that meaning the graphs are same .

IIV. CONCLUSION
1- Understanding the relations between different currents and voltages
in BJT devices.
2- Plotting the input and output current-voltage characteristics of BJTs.
3- Measure of the DC operating points and DC current gain of BJT devices.