OSG65R099HZ_Datasheet

Enhancement Mode
N-Channel Power MOSFET

Features Applications

 Ultra-fast and robust body diode  PC power

 Low RDS(on) & FOM  Server power supply

 Excellent low switching loss  Telecom

 Excellent stability and uniformity  Solar invertor

 Easy to drive  Super charger for automobiles

 , OSG65R099HZ
Enhancement Mode N-Channel Power MOSFET

 General Description

 VDS, min@Tjmax 700 V

OSG65R099HZ use advanced GreenMOSTM
technology to provide low RDS(ON), low gate  ID, pulse 120 A
charge, fast switching and excellent avalanche  RDS(ON), max @ VGS=10 V 99 mΩ
characteristics. This device offers extremely fast
 Qg 42.6 nC
and robust body diode, and is suitable for telecom
and super charger applications.

 Schematic and Package Information

Schematic Diagram Pin Assignment-Top View

TO247
OSG65R099HZ

 Absolute Maximum Ratings at Tj=25℃ unless otherwise noted

Parameter Symbol Value Unit

Drain source voltage VDS 650 V

Gate source voltage VGS ±30 V

Continuous drain current1) 40

ID A
Continuous drain current1) Tj=100 ℃ 25

Pulsed drain current2) ID, pulse 120 A

Power dissipation3) PD 278 W

Single pulsed avalanche energy5) EAS 1000 mJ

MOSFET dv/dt ruggedness, VDS=0…480 V dv/dt 50 V/ns

Reverse diode dv/dt, VDS=0…480 V, ISD≤ID dv/dt 15 V/ns

Operation and storage temperature Tstg，Tj -55 to 150 ℃

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Enhancement Mode N-Channel Power MOSFET

 Thermal Characteristics

Parameter Symbol Value Unit

Thermal resistance, junction-case RθJC 0.45 °C/W

Thermal resistance, junction-ambient4) RθJA 62 °C/W

 Electrical Characteristics at Tj=25 ℃ unless otherwise specified

Parameter Symbol Min. Typ. Max. Unit Test condition

650 VGS=0 V, ID=1 mA

Drain-source breakdown voltage BVDSS V VGS=0 V, ID=1 mA
700 770
Tj=150 ℃

Gate threshold voltage VGS(th) 3 4.5 V VDS=VGS, ID=2 mA

0.088 0.099 VGS=10 V, ID=20 A

Drain-source on-state resistance RDS(ON) Ω VGS=10 V, ID=20 A,
0.23
Tj=150 ℃

100 VGS=30 V
Gate-source leakage current IGSS nA
-100 VGS=-30 V

Drain-source leakage current IDSS 10 μA VDS=650 V, VGS=0 V

 Dynamic Characteristics

Parameter Symbol Min. Typ. Max. Unit Test condition

Input capacitance Ciss 3073 pF

VGS=0 V,
Output capacitance Coss 448.8 pF VDS=50 V,
ƒ=1 MHz
Reverse transfer capacitance Crss 7.3 pF

Turn-on delay time td(on) 70.8 ns

VGS=10 V,
Rise time tr 58.8 ns VDS=400 V,

Turn-off delay time td(off) 104.7 ns RG=25 Ω,

ID=20 A
Fall time tf 70.2 ns

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Enhancement Mode N-Channel Power MOSFET

 Gate Charge Characteristics

Parameter Symbol Min. Typ. Max. Unit Test condition

Total gate charge Qg 42.5 nC

ID=20 A,
Gate-source charge Qgs 14 nC
VDS=400 V,
Gate-drain charge Qgd 12.2 nC
VGS=10 V
Gate plateau voltage Vplateau 6.0 V

 Body Diode Characteristics

Parameter Symbol Min. Typ. Max. Unit Test condition

Diode forward current IS 40

A VGS<Vth
Pulsed source current ISP 120

Diode forward voltage VSD 1.4 V IS=40 A, VGS=0 V

Reverse recovery time trr 162 ns

IS=20 A,
Reverse recovery charge Qrr 1.12 μC
di/dt=100 A/μs
Peak reverse recovery current Irrm 13 A

 Note

1) Calculated continuous current based on maximum allowable junction temperature.

2) Repetitive rating; pulse width limited by max. junction temperature.
3) Pd is based on max. junction temperature, using junction-case thermal resistance.
4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with Ta=25 °C.
5) VDD=100 V, RG=25 Ω, L=80 mH, starting Tj=25 °C.

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Enhancement Mode N-Channel Power MOSFET

 Electrical Characteristics Diagrams

40

100 VDS=20 V
10 V
7V
ID, Drain-source current (A)

30

ID, Drain current(A)

6V

20
10 125 ℃

25 ℃
10
5V

VGS= 4.5 V
0 1
0 5 10 0 2 4 6 8 10
VDS, Drain-source voltage (V) VGS, Gate-source voltage(V)

Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics

10
VGS, Gate-source voltage(V)

4
10 8

Ciss
C, Capacitance(pF)

3
10 6

Coss
2
10 4

1
10 2

Crss
0
10 0
0 20 40 60 80 100 0 10 20 30 40 50
VDS, Drain-source voltage (V) Qg, Gate charge(nC)

Figure 3, Typ. capacitances Figure 4, Typ. gate charge

800 0.24
BVDSS, Drain-source breakdown voltage (V)

0.22
780
0.20
RDS(on) , On-resistance()

760
0.18
740
0.16
720
0.14
700
0.12

680 0.10

660 0.08

640 0.06

620 0.04
-60 -40 -20 0 20 40 60 80 100 120 140 160 -60 -40 -20 0 20 40 60 80 100 120 140 160
Tj , Junction temperature (℃) Tj , Juntion temperature (℃ )

Figure 5, Drain-source breakdown voltage Figure 6, Drain-source on-state resistance

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Enhancement Mode N-Channel Power MOSFET

0.13

0.12

RDS(ON), On-resistance()
Is, Source current(A)

10
0.11
125 ℃
VGS=7 V
0.10

25 ℃ 0.09
1
VGS=10 V

0.08

0.07
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 5 10 15 20 25 30 35 40
VSD, Source-drain voltage(V) ID, Drain current(A)

Figure 7, Forward characteristic of body diode Figure 8, Drain-source on-state resistance

50 1000

40
ID, Drain-source current (A)

100
ID, Drain current(A)

30
10us
10 RDS(ON) Limited

20 100s

1ms
1
10 10ms
DC

0 0.1
0 25 50 75 100 125 150 1 10 100 1000
TC , Case temperature (℃) VDS, Drain-source voltage(V)

Figure 9, Drain current Figure 10, Safe operation area TC=25 ℃

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Enhancement Mode N-Channel Power MOSFET

 Test circuits and waveforms

Figure 1, Gate charge test circuit & waveform

Figure 2, Switching time test circuit & waveforms

Figure 3, Unclamped inductive switching (UIS) test circuit & waveforms

Figure 4, Diode reverse recovery test circuit & waveforms

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Enhancement Mode N-Channel Power MOSFET

 Package Information

TO247 package outline dimension

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Enhancement Mode N-Channel Power MOSFET

 Ordering Information

Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box

TO247 30 11 330 6 1980

 Product Information

Product Package Pb Free RoHS Halogen Free

OSG65R099HZ TO247 yes yes no

OSG65R099HZF TO247 yes yes yes

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