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Diode Model (PN-Junction Diode Model)
Diode Model (PN-Junction Diode Model)
Symbol
Parameters
EgBeta
Energy gap temperature coefficient beta K 1108
(Gap2)
Tcjo (Cta) Cjo linear temperature coefficient 1/oC 0
Parameter value is scaled with 1/Area. ‡ Value 0.0 is interpreted as infinity. ‡‡ Parameter value is scaled with the Periph specified with the Diode device. ‡
‡‡ Parameter value is scaled with 1/Periph.
Netlist Format
Model statements for the ADS circuit simulator may be stored in an external file. This is typically done with foundry model kits. For more information on
how to set up and use foundry model kits, refer to Design Kit Development.
The model statement starts with the required keyword diode. It is followed by the modelname that will be used by diode components to refer to the model.
The third parameter indicates the type of model; for this model it is Diode. The rest of the model contains pairs of model parameters and values, separated
by an equal sign. The name of the model parameter must appear exactly as shown in the parameters table-these names are case sensitive. Some model
parameters have aliases, which are listed in parentheses after the main parameter name; these are parameter names that can be used instead of the
primary parameter name. Model parameters may appear in any order in the model statement. Model parameters that are not specified take the default
value indicated in the parameters table. For more information about the ADS circuit simulator netlist format, including scale factors, subcircuits, variables
and equations, refer to ADS Simulator Input Syntax.
Example:
Notes/Equations
Note
For RFDE Users Information about this model must be provided in a model file; refer to Netlist Format.
Area = w × l
Periph = 2 × (w + l)
where w = Width × Shrink + Dwl
l = Length × Shrink + Dwl
otherwise the Area and Periph specified in the device or model
(follow the same logic described when Level=1)
will be used to calculate the new area and periph.
otherwise use model Area if it is specified and > 0 otherwise, Area = 1 (default) Device Periph will be used if it is specified and > 0 Otherwise, if
Length and Width in device or model (in this order) are specified and > 0,
where
If vd < -10 × N × vt
Breakdown current contribution is considered if Bv is specified and Ibv is not equal to zero. If -(vd + Bv) > vbmax
ib = 0
gb = 0
Otherwise
ibo = 0
MAXEXP is the maximum exponent supported by the machine; value range is 88 to 709.
Low level reverse breakdown current is considered if Ibvl is specified and not equal to zero. If -(vd + Bv) > vlbmax
where
Otherwise
ilb = 0
glb = 0
For ilbo
If Bv < MAXEXP × Nbvl × vt
Otherwise
ilbo = 0
where
If vrmax vd - 10 × Nr × vt If vd < - 10 × Nr × vt
There are two ways to model high-injection effect. When IkModel is set to ADS/Libra/Pspice and when Ikf 0 and iexp > 0.
When IkModel is
set to Hspice:
If Ikf is not equal to zero and iexp > 0
Otherwise if
where Gmin is minimum junction conductance. Sidewall diode: Sidewall diode equations have been multiplied by Periph, Isw, Ibv, Ikp, Gleaksw. If
vdsw > vmaxsw
Breakdown current contribution is considered if Bv is specified and Ibv 0 and Level 11. If -
(vdsw + Bv) > vbmaxsw
ibsw = 0
gbsw = 0
For ibosw If (vd + Bv) < MAXEXP × Nbv × vt Otherwise ibosw = 0 MAXEXP is the maximum
exponent supported by the machine; value range is 88 to 709.
6. Diode Capacitances
For main diode capacitance
Diffusion capacitance
Cdiff = Tt × gdexp
Junction capacitance
If vd Fc × Vj
If Vd > Fc × Vj
7. Temperature Scaling
Parameters Is, Jsw, Isr, Cjo, Cjsw, Vj, Vjsw, Bv, Tt, and Rs are temperature dependent.
Note
Expressions for the temperature dependence of the energy bandgap and the intrinsic carrier concentration are for silicon only.
Depletion capacitance for non-silicon diodes may not scale properly with temperature, even if values of Eg and Xti are altered from the
default values given in the parameters list.
The model specifies Tnom, the nominal temperature at which the model parameters were calculated or extracted. To simulate the device at
temperatures other than Tnom, several model parameters must be scaled with temperature. The temperature at which the device is simulated is
specified by the device item Temp parameter. (Temperatures in the following equations are in Kelvin.) The energy bandgap E G varies as:
if Tlev = 0, 1
if Tlev = 2
The intrinsic carrier concentration n i for silicon varies as:
The saturation currents Is, Isr, and Jsw scale as: if Tlev = 0 or Tlev = 1
else if Tlev = 2
The breakdown current Ibv does not scale with temperature. The transit time Tt scales as:
if Tlevc = 0
if Tlevc = 1
if
Tlevc = 2
if Tlevc = 3 if Tlev = 2
if Tlev = 0 or Tlev = 1
Thermal noise generated by resistor Rs is characterized by the following spectral density: Shot noise and flicker
noise (Kf, Af, Ffe) generated by the DC current flow through the diode is characterized by the following spectral density:
References
1. Antognetti and G. Massobrio. Semiconductor device modeling with SPICE, New York: McGraw-Hill, Second Edition 1993.
Equivalent Circuit