Mil HDBK 217f Notice 2

Downloaded from http://www.everyspec.
com
NOTICE OF CHANGE NOT MEASUREMENT

k
SENSITIVE 1
e
THIS HANDBOOK IS FOR GUIDANCE ONLY - MIL-HDBK-217F

DO NOT CITE THIS DOCUMENT AS A REQUIREMENT NOTICE 2
28 February 1995
MILITARY HANDBOOK
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
To all holders of MIL-HDBK-217F
1. The following pagesofMIL-HDBK-217F have been revised and supersede the pagea Med.
.
New Page($) 1 “Date superseded Page(6) Date
r
Front Cover Front Cover 2 December 1991
... ...
Ml [ 2 December 199I 11! Reprinted without charme
r
iv iv 2 Deoember 1991 \
v v I 2 December 1991
vi vi I 2 Deoember 1991 A
vii 1 vii I 10 Julv 1992

.,.
Vlll New Page
I
L 1-1 1-1 2 Deoember 1991 1

1-2 New Page ~
1
2-1 2“1 12 December 1991 4
2-2 2-2 2 Deoember 1991 1

I 2-3 2-3 . 2 Deoember 1991 1
1 2-4 1 2-4 I2 Daoember 1991
, 2-5 2-5 12 December 1991
2-6 2-6 12 Deoember 1991 I
9.7 New Paae
2-8 I New Page
r
5“3 5-3 10 Ju~ 1992

54 10 July 1992 5-4 Reprinted without change
I
5-5 5-5 2 December 1991 I
5-6 5-6 2 IxoWnber 1991 4
r 5-9 5-9 10 Ju& 1992
5-1o 2 December 1991 5-1o Reprinted without change
v
, 5-23 5-23 2 Deoember 1991
5-24 5-24 2Deoember1991
6-1 2 December 1991 6-1 ~ Reprinted without change A
6-2 6-2 ~ 2 December 1991

7-3 7-3 2 Deoember 1991
7-4 2 December 1991 7-4 Reprinted without change
9-1 through 9-3 9-1 through 9-29 2 December 1991 ,
10-1 through 10-6 10-1 through 10-32 2 December 1991
11-1 11-1 [ 2 C)ecember 1991
11-2 11-2 I 2 December 1991
11-!?
..- 1
11-3 ! 2 December 1991
,
11-4 11-4, 11-5 2 December 1991 ,

12-1 12-1 2 December 1991
1-
1~.p 12-2 2 December 1991 d
. . . . . . . . —— ———-.— —
6
.—— .—.
1
Downloaded from http://www.everyspec.com
MI1-HDBK-217F
NOTICE 2
*
I New Page(s) Date Superseded Page(s) Date
r 12-3 12-3 10 JUIY 1992
12-4 12-4 I 2 December 1991
12-5 12-5 2 December 1991 1
13-1 13-1 2 December 1991
13-2 13-2 2 December 1991
f --- 1 ---
‘ - ?ecember 1991
14-1 through 14-2 14-1 mrougn 144 z Uecember 1991
14-3 14-5 2 December 1991
15-1 through 15-3 15-1 through 15-6 2 December 1991
r 16-1 16-1 2 December 1991
# 16-2 I New Page
— i
16-4 I New Page
17-1 17-1 2 December 1991
Appendix A A-1 through A-18 2 December 1991, 10 July 1992
C-3 c-3 2 December 1991
1 c-4 1 1 c-4 ] 2 December 1991 I
2. Retain the pages of this notice and insert before the Table of Contents.
3. Holders of MIL-HDBK-217F will verify that page changes and additions indicated have been
entered. The notice pages will be retained as a check sheet. The issuance, together with
appended pages, is a separate publication. Each notice is to be retained by stocking points until
the military handbook is revised or canceled.
Custodians: Preparing Activity:

Army - CR Air Force -17
Navy - EC
Air Force -17 Project No, RELI-0074
Review Activities:
Army - Ml, AV, ER
Navy - SH, AS, OS
Air Force-11,13, 15, 19,99
Army - AT, ME, GL

Navy - CG, MC, YD, TD
Air Force -85
AMSC NIA
DISTRIBUTION STATEMENT A: Approved for publlc release; dlstnbutlon unlimited.
— — — ---- 1
1 1 1
=, I- r____ —
I NOT MEASUREMENT SENSITIVE]

MIL-HDBK-217F
2 DECEMBER 1991
SUPERSEDING
MIL-HDBK-217E, Notice 1
2 January 1990
MILITARY HANDBOOK
RELIABILITY PREDICTION OF
ELECTRONIC EQUIPMENT
THIS HANDBOOK IS FOR GUIDANCE ONLY -DO NOT

CITE THIS DOCUMENT AS A REQUIREMENT
! FSC-RELI
. _—- :
AMSC NIA
DISTRIBUTION STATEMENT Ad Approved for publlc release; drstrlbu!lcn tinllmtted

MIL-HDBK-217F
DEPARTMENT OF DEFENSE
WASHINGTONDC 20301
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
1, This standardization handbook was developed by the Department of Defense

with the assistance of the military departments, federal agencies, and industry.
2. Every effort has been made to reflect the latest information on reliability
prediction procedures. It is the intent to review this handbook periodically to
ensure its completeness and currency.
3. Beneficial comments (recommendations, additions, deletions) and any

pertinent data which may be of use in improving this document should be
addressed to: Rome Laborato@ERSR, Attm Seymour F. Morris, 525 Brooks
Rd., Griffiss AFB, NY 13441-4505, by using the self-addressed
Standardization Document Improvement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
II
,.. .-. .-— .. -..., -—.-—- ___ __ .. . --.— . . — ----- al.. -A-- I-*A A -*..A;a-
MIL-HDBK-217F
TA8LE OF CONTENTS
SECTION 1: SCOPE
1.1 Purpose ................... ..... .... .... .. .. ...... ... ... ......... .. .. .... .................. ......... .... ........ ... .... .. 1-1
1.2 Application . ......... ....... ....... ...... .. ... ... ...... ........ ..... .............. ... .... .......... ............ ... .... .. 1-1
1.3 Computerized Reliability Prediction .. .... .. ........ ... ..... ...... ........ .... ....... ....... ........... .... .. 1-1
SECTION 2: REFERENCE DOCUMENTS ..................... ................... ....... ....... ... ..... ... ...... 2-1
SECTION 3: INTRODUCTION
3.1 Reliability Engineering ... .... ...... . .... ... ....... ........ .... .. .... ............... .......... ... .... .... .... .... .. 3-1
3.2 The Role of Reliability Prediction ........... ............................................................. .... .. 3-1
3.3 Limitations of Reliability Predictions ....... ....................... ........................... ................. 3-2
3.4 Part Stress Analysis Prediction ................................................................................ 3-2
SECTION 4: RELIABILITY ANALYSIS EVALUATION . ..... .......................... ................. .. 4-1
SECTION 5: MICROCIRCUITS, INTRODUCTION . .... ... ............ .... .................. ...... .... .... ..
● 5-1
5.1 Gate/Logic Arrays and Microprocessors ......... ................................................... ........ 5-3
5.2 Memories .... .... .... ...... ........ ...... ..........0..... .... ...... .... ........... .................. ...... ..... ........ . 5-4
5.3 VHSIC/VHSIC Like ................. ..... .... .............. ..... ...... ... .................... ... ....... .... .. .. ...... 5-7
5.4 GaAs MMIC and Digital Devices . .. ... .... ..... ........ .... .... ........... ....... .............. ....... .... .... .. 5-8
5.5 Hybrids ... ... ............. ...... .... ........ ... ... ... ... .... .... .... .... ........... .......... ...... .... ........ .......... 5-9
5.6 SAW Devices ........ ..... ............ ... .. .... ...... ........ ....... .... ..... ............. ..... ...... . ...... .. .. ...... 5-1o
5.7 Magnetic Bubble Memories ...... .. ...... ... ... ........ ... .... .... ..... ...... ................ ......... .. ........ 5-11
5.8 XT Table for All ................ .......... ..... .................... .....................0... ........... ...., *.**...... ., 5“13
5.9 C2 Table for All ....................................................................................................... 5-14
5.10 XE, ~ and ZQ Tables for All ............. ................................................*.**................0.
● 5-15
5.11 TJ Determination, (All Except Hybrids) ......................*.*... ............................ ...*.....*,.
● ● 5-17
5.12 TJ Determination, (For Hybrids) ...................................................................... .*....... ● 5-18
5.13 Examples ............................................................................................................... 5-20
SECTION 6: DISCRETE SEMICONDUCTORS

6.0 Discrete Semiconductors, Introduction ... . ....... ... .. .. ......... ...... ................... ....00..... ... .. 6-1
6.1 Diodes, Low Frequency ..... ..... .. .. ... .. .... ... ... ..... .... .. ............ ........... ...... .... ....... ........., 6-2
6.2 Diodes, High Frequency (Microwave, RF) . ....... ..... .... ...... ..................... ... .... .... .... .... .. 6-4
6.3 Transistors, Low Frequency, Bipolar ..... ... .... .... .... .. ....... ..... ..................... ....... .... . ..... 6-6
6.4 Transistors, Low Frequency, Si FET ...... ........ ....... ...................0................................ 6-8
6.5 Transistors, Unijunction ........... .. ............ ................ ................................. ....... .... ...... 6-9
6.6 Transistors, Low Noise, High Frequency, Bipolar ........... ... O.*......**.*.. ....... ......... .... ... . ● 6-10
6.7 Transistors, High Power, High Frequency, Bipolar .......0..... ....................... ................. 6-12
6.8 Transistors, High Frequmcy, GaAs FET .. .... ..... . . . . . . . . ...0. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-14
6.9 Transistors, High Frequency, Si FET ..........................
● . . . . . . . . . . . . . . ● . . . . . . . . . . . . . ● . . . . . . . . . . . . . . . . 6-16
6.10 Thyristors and SCRS .....................**......................... . . . . . . ...0... . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-17
6.11 Optoelectronics, Detectors, Isolators, Emitters ... .... ........ ............. . . . . . ..*...... ,, ., . 0......,, , 6-19
6.12 Optoelectronics, Alphanumeric Displays .........0.................. ● . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6-20
6.13 Optoelectronics, Laser Diode ... . ....... ....... ........... .. ......... .................. .... ... ... .... . ........ . 6-21
6,14 TJ Determination ................ ..... ... .... .. ... ... ........ .... .. ..... ....... .............. ... ........... .......... 6-23
6.15 Example ...... ........................ .... ..... .... ... ... ....... .. .... ................ .................. . ...... . ......... 6-25
...
Ill
m m T I 1
MIL-HD8K-217F
NOTICE 2
TABLE OF CONTENTS
TUBEs 7-1
sECTION 7: ................ .......... ............. .. .................. .... ..... 7-3
7.1 All Types Except ?WT and Magnetron
Traveling Wave ................................... ............... ......... .................... ........ ................
7-4
7.2
7.3 Magnetron ............ ... ............ .............. ....... ................. .. ....!..... ... ....... ....... ...............
LASERs 8-1
SECTlON 8:
introduction ............ ..... ....... ...... .............. ............... ..... ........ ... .... .. .... ........ ....... ...... . 8-2
8.0
Helium and Argon
......... ....... ....... ..... ....... ....... .................. .. ..............” ........” ... ....”” ... 8-3
8.1
Carbon Dioxide, Sealed
.. ........ ....... .. ........ ............ ...... ... .......... .. .................. ......... .. 8-4
8.2 ............ .... ....... ......................................... ...... ....... .......... 8-5
8.3 Carbon Dioxide, Flowing ........ ..... ..................... .... ... ............ .............. ...
8.4 Solid State, ND:YAG and Ruby Rod
RESISToRs 9-1
sECTION 9:
9.1 .. ...-..”..” “”
Resistors . ... .......... ..... ........ ...... ........ ....... .................... ....... .... ...”. .. ......o=~. ●
CAPACITORS 10-1
sECTION 10:
Capacitors ............ .... ... ...... .. ............... ... ...... ................ ......... ....*.... ......0...”. ....... ...”. 10-6
10.1
.. ...... ... ...... ........ ............... ......... ........... ........... .....” . .... ........... .
10.2 Capacitors, Example
INDUCTIVE DEVICES 11-1

sECTIO~ 11:
Transformers ........ ..... ..... ...... .... .... ....... ....... .............. ..................... ................. ...... . 11-3
11.1
11-4
11.2 Colh,.. . . ....... ..... ... .................... ........ ............ ..................
............. .................................. ..........””
......... ...... .......... ... ......”... ...
.. .
11.3 Determination of l-lot Spot Temperature
ROTATING DEVICES 12-1

sECTlol 12:
Motors . .. ............. .... ............. ... .... .. ...... ..................... ............*.* ... .. ...”... ................”.
12-4
12.1 12-5
.......................................................” ......*....”.” .........””.”” .*.*
12.2 Synchros and Resolvem
............................................ ...............................$.................
Elapsed lime Meters
●
12.3
RELAys 13-1
sECTIO 13:
Mechanical .. ............. ........ ...... .... ... ..................... ..... ................. ...........0..... ..... ........ 13-3
13.1
.......... ........ ................ ................ ... .......................... ... ...
13.2 Solid State and Time Delay
SWITCHEs 14-1
sECTlc )N 14:
Sw[tche . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...*.”.. ....o.”..~” . . . . . . . . . . . . . . . 14-2
14.1
14.2 Circuit Breakers ................. ..... ..... ...........0..,,..,.. . ..........” ....... ....” ... ......””” .........””. ... ..
15-1
SECTI( )N 15: CONNECTORS
...... ........ ........ .... ...... ................. ... .......... ..... ....” .. .........” .... .. .... 15-3
15.1 Connectors, General
. ..... ...... .... ... ...... .............. .............. .......*....” ...*...**”* .. *..*.*.*. .....
15.2 ) Connectors, Sockets
16-1
sECTl~ ON 16: INTERCONNECTION ASSEMBLIES ......... .................. ........ .. .....
16-2
16.’ I Interconnection Assemblies with Plated Through Holes ................... ......................
16.: ~ Interconnection Assemblies, Suflace Mount Technology
CONNECTIONS 17-1
SECTI ON 17:
17. 1 Connections ...... ............ ....... ....... .... ........................ ................. . . ..0...... . . . . . . . . . . . . . . . . . .
METERS 18-1
SECT! ION 18:
18. 1 Meters, Panel .................................!....... .................................................................
QUARTZ CRYSTALS 19-1

SECT ION 19: .................................................
19 .1 Quartz C~sta\s .....................................................
Supersedes page w of Revtslon F

Iv
--I > --1 . ----- -- - - ——-— -- -n l-l --l , --, ..* . .T”c ,
MIL-HDBK-217F
NOTICE 2
TABLE OF CONTENTS
SECTION 20: LAMPS 20-1

20.1 Lamps .. . ..... .. .......... .............. ........... .... .... .... ....................... .. ...... ... .... .... ... .............
SECTION 21: ELECTRONIC FILTERS 21-1

21.1 Electronic Filters, Non-Tunable ........ ... ........ ......... ................................................... .
SECTION 22: FUSES 22-1

22.1 Fuses. . .... .. .... ...... ................ ......... .. ... ........ ..... .... ......... .... .... ..... ....... .... .... .............
SECTION 23: MISCELLANEOUS PARTS 23-1

23.1 Miscellaneous Parts ............. ... .......... .. ............... .... ........ ..... ....... .... .... .... ... .. ........ ....
. .. .... .. ..... .... ...*.. ... .. ...*... ... ... A-1
APPENDIX A: PARTS COUNT RELIABILITY PREDICTION
APPENDIX B: VHSIC/VHSICOLIKE AND VLSI CMOS (DETAILED MODEL) .. ..... .... ... B-1
c-1
APPENDIX C: BIBLIOGRAPHY . .................. ... .... ... ................. ........ ...... .... .... ...... ...............
LIST OF TABLES
3-3
Table 3-1: Parts with Mu)ti-Level Quality Specifications ......................... ............................... 3-4
Table 3-2: Environmental Symbol and Description ........................................*..................... 4-1
Table 4-1: Reliability Analysis Checklist ...... ....................................................................... 6-23
Table 6-1: Defautt Case Temperatures for All Environments (°C) . ..... ............ ... ..... . ............ ...
Table 6-2: Approximate Thermal Resistance for Semicond@or Devices 6-24
in Various Pa*@ Sk= .......*.*.......**......*...................*...*..*...........................
LIST OF FIGURES
5-18
Figure 5-1: Cross Sectional View of a Hybrid with a Single Multi-Layered Substrate .......... .... .. 8-1
Figure 8-1: Examples of Active Optical Suffaces . ........... ... ................ ............ ..... ... ....... ..... ...
V
Supersedes page v of Revision F
,.. . - I r—acinclucl I VLRY I rlmllllulk I IWUIIIICIIIICLIL I

M! L-HDBK-217F
NOTICE 2
FOREWORD
1.0 THIS HANDBOOK IS FOR GUIDANCE ONLY. THIS HANDBOOK SHALL

NOT BE CITED AS A REQUIREMENT. IF IT IS, THE CONTRACTOR DOES NOT
HAVE TO COMPLY.
MIL-HDBK-217F, Notice 2 provides the following changes based upon a recently completed
study (see Ref. 37 listed in Appendix C):
b Revised resistor and capacitor models, including new models to address chip devices.
● Updated failure rate models for transformers, coils, motors, relays, switches, circuit breakers,
connectors, printed circuit boards (with and without surface mount technology) and
connections.
. A new model to address surface mounted technology solder connections.
. A revised Traveling Wave Tube model based upon data supplied by the Electronic Industries
Association Microwave Tube Division. This further lowers the calculated failure rates beyond
the earlier modifications made in the base document (MIL-HDBK-217F, 2 December 1991).
● Revised the Fast Recove~ Power Rectifier base failure rate downward based on a
reevaluation of Ref. 28.
2.0 MIL-HDBK-217F, Notice 1, (10 July 1992) was issued to correct minor typographical
errors in the basic F Revision.
3.0 MIL-tiDBK-217F, (base document), (2 December 1991) provided the following

changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C):
1. New failure rate prediction models are provided for the following nine major classes of
microcircuits:
● Monolithic Bipolar Digital and Linear Gate/Logic Array Devices

●
Monolithic MOS Digital and Linear Gate/Logic Array Devices
●
Monolithic Bipolar and MOS Digital Microprocessor Devices
(including Controllers)
●
Monolithic Bipolar and MOS Memory Devices
●
Monolithic GaAs Digital Devices
●
Monolithic GaAs MMIC Devices
● Hybrid Microcircuits
9 Magnetic Bubble Memories
● Surface Acoustic Wave Devices
The 2 December 1991 revision provided new prediction models for bipolar and MOS
microcircuits with gate counts up to 60,000, linear microcircuits with up to 3000
transistors, bipolar and MOS digital microprocessor and co-processors up to 32 bits,
memory devices with up to 1 million bits, GaAs monolithic microwave integrated circuits
(MMICS) with up to 1,000 active elements, and GaAs digital ICS with up to 10,000
transistors. The C, factors have been extensively revised to reflect new technology
dewces with Improved reliability, and the activation energies representing the temperature
sensltwlty of the dice (nT) have been changed for MOS devices and ‘or memories The
Supersedes page VII of Revision F, NotIce 1 Vll
~ a IVusw wlBaiaKa Ufi II M1iw ~av~

MIL-HDBK-217F
NOTICE 2
FOREWORD
C2 factor remains unchanged from the prewous Handbook version, but includes pin grid
arrays and surface mount packages using the same model as hermetic, solder-sealed dual
in-hne packages. New values have been included for the quality factor (XQ), the learning
factor (~~), and the environmental! factor (nE). The model for hybrid microcircuits has
been revised to be simpler to use, to delete the temperature dependence of the seal and
interconnect failure rate contributions, and to provide a method of calculating chip
junction temperatures.
2. A new model for Very High Speed Integrated Circuits (VHSIC/VHSiC Like) and Very
Large Scale Integration (VLSI) devices (gate counts above 60,000).
3. The reformatting of the entire handbook to make it easier to use.
4. A reduction in the number of environmental factors (zE) from 27 to 14.
5. A revised failure rate model for Network Resistors.
6. Rewsed models for TWS and Klystrons based on data supplied by the Electronic
Industries Association Microwave Tube Division.
MIL-HDBK-217F
NOTICE 2
1.0 SCOPE
1.1 Purpose - This handbook Is for guidance only and shall not be cited as a
requirement. ff it la, the contractor does not have to comply (see Page 1-2). T he
purpose of this handbook is to establish and maintain consistent and uniform methods for estimating
the inherent reliability (i.e., the reliability of a mature design) of military electronic equipment and
systems. It provides a common basis for reliability predictions during acquisition programs for military
electronic systems and equipment. It also establishes a common basis for comparing and evaluating
reliability predictions of related or competitive designs. The handbook is intended to be used as a tool
to increase the reliability of the equipment being designed.
1.2 Appllcatlon - This handbook contains two methods of reliability prediction - “Part Stress
Analysis” in Sections 5 through 23 and ‘Parts Count” in Appendix A. These methods vary in degree
of information needed to apply them. The Parl Stress Analysis Method requires a greater amount of
detailed information and is appl”=ble during the later design phase when actual hardware and circuits
are being designed. The Parts Count Method requires less information, generally part quantities,
quallty level, and the application environment. This method is applicable during the early design phase
and during proposal formulation. In general, the Parts Count Method will usually result in a more
consewative estimate (i.e., higher failure rate) of system reliability than the Parts Stress Method.
Supersedes page 1-1 of Revision F 1-1

MI L-I-IDBK-217F
NOTICE 2
1.0 SCOPE
RL/ERsR, lat. s. mm=

COMMANDER, R- LABORA~RY (AFMC), AlTN:
SUBJECT: Notice 2 to ~-xDBK-217F, “-li~ili~ Redictim of

Elecwodc lz@gX=t” , EOjact REU-0074
Prior to s~ the subject aotico to tha DoD Six@O Stock

Point for printing ard tistrtitia, the follas additions nwt
be made:
- Au CAM: bert
● ACrOSS the cover in BIG BOLD BLACK LZITERS
“EZIS HAZUX)BOOK XS FOR ~ -Y. mm’rm~s
mcunENT~A~””
● xn the FOREWORD (Page vii of Notice 2 ) , ~agr~h 1.0: M
‘THIS HANDBOOK 1S POR GUIDAN= ONLY. msEANDBoox~~
IFrrxs, m ~R mEs NOT
BE CXTZD AS A ~.
HAVE m COMPLY. ”
“MS
● Add entry for
an the SCOPE* pua4m@ 1.1 (~e) :
handbook is for guibce only and shall not be citd as a
requir~t. If it ia, the contrmtor &e8 not have to
coa@y . “
If YOU have anY uuestim r~ thb reQueat , plea-

contact Ma. Carla J~ .
Waltez B. Be% , 11
Chaiman, +
Defense Standada =mrQV’--t
Council
cc : OVSD(A&T)~~&E/SE, Mr. M. Zsak
New Page
1-2
■ -. Ma 1 I 1 1
MIL-HDBK-217F
NOTICE 2
2.0 REFERENCE DOCUMENTS
This handbook cites some specifications which have been cancelled or which describe devices that are
not to be used for new design. This information is necessary because some of these devices are used in
so-called “off-the-shelf” equipment which the Department of Defense purchases. The documents cited
in this section are for guidance and information.
SPECIFICATION SECTION # TITLE
MIL-C-5 10.1 Capacitors, Fixed, Mica Dielectric, General Specification for
M! L-R-l 1 9.1 Resistor, Fixed, Composition (Insulated), General Specification for
MIL-R-19 9.1 Resistor, Variable, Wirewound (Low Operating Temperature) General

Specification for
MIL-C-20 10.1 Capacitor, Fwed, Ceramic Dielectric (Temperature Compensating),

Established Reliability and Nonestablished Reliability, General
Specification for
MIL-R-22 9.1 Resistor, Variable, Wirewound (Power Type), General Specification for
MIL-C-25 10.1 Capacitor, Fixed, Paper-Dielectric, Direct Current (Hermetically Sealed

in Metal Cases), General Specification for
MIL-R-26 9.1 Resistor, Ftxad, Wirewound (Power Type), General Specif~ation for
MIL-T-27 11.1 Transformer and Inductors (Audio, Power, High Power Pulse),
General Specifiition for
MIL-C-62 10.1 Capacitor, FuedElectrolytic (DC, Aluminum, Dry Ekctrotyte,

Poladzad), General Specification for
MIL-G81 10,1 Capacitor, Variable, Ceramic Dielectric, General Specification for
MIL-C-92 10.1 Capacitor, Variable, Air Dielectric (Trimmer), General Specification for
MIL-R-93 9.1 Resistor, Fixed, Wirewound (Accurate), General Specification for
MIL-R-94 9.14 Resistor, Variable, Composition, General SpecMcation for
MIL-V-95 23.1 Vibrator, Interrupter and Self-Rectifying, General Specification for
W-L-1 11 20.1 Lamp, Incandescent Miniature, Tungsten Filament
W-C-375 14.5 Circuit Breaker, Molded Case, Branch Circuit and Sewice
W-F- 1726 22.1 Fuse, Cartridge, Class H (this covers renewable and nonrenewable)
W-F-1814 22.1 Fuse, Cartridge, High Interrupting Capacity
MIL-C-3098 9.1 Cqmtal Unit, Quartz, General Specification for
MIL-C-3607 5!1 Connector, Coaxial, Radio Frequency, Series Pulse, General

Specifications for
MIL-C-3643 51 Connector, Coaxial, Radio Frequency, Series HN and Associated

Fittings, General Specification for
--— 3.. tiz~ a u

MIL-HDBK-217F
NOTICE 2
MIL-G3650 15.1 Connector, Coaxial, Radio Frequency, Series LC
MIL-C-3655 15.1 Cormector, PIIJg and Receptacle, Electrical (Coaxial Series Twin) and
Associated Fittings, General Specification for
MIL-S-3786 14.3 Swrtch, Rotary (Circuit Selector, Low-Current (Capacity)), General

Specification for
MIL-S”3950 14.1 Switch, Toggle, Environmentally Sealed, General Specification for
MIL-G3965 10.1 Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum, General

Specification for
MIL-C+O15 15.1 Connector, Electrical, Ckoular Threaded, AN Type, General

Specification for
MIL-F-5372 22.1 Fuse, Current Limiter Type, Akcraft
MIL-S-5594 14.1 Switches, Toggle, Electrically Held Sealed, General Specification for
MIL-R-5757 13.1 Relays, Electromagnetic, General Specification for
MIL-R-6106 13.1 Relay, Electromagnetic (Including Established Reliability (ER) Types),

General Specification for
ML-L-6363 20.1 Lamp, Incandescent, Aircraft Service, General Specification for
MIL-S-8805 14.1, 14.2 Switches and Swttch Assemblies, Sensitive and Push (Snap Action),
General Spedkatiin for
MIL-S-8834 14.1 Switches, Toggle, Positive Break General Specification for
MIL-S-8932 14,1 Switches, Pressurer Aircraft, General Specification for
MIL-S-9395 14,1 Switches, Pressure, (Absolute, Gage, and Differential), General

Specification for
MIL-S-9419 14.1 Switch, Toggle, Momentary Four Position On, Center Off, General
Specification for
MIL-M-10304 18.1 Meter, Electrical Indicating, Panel Type, Ruggedized, General

Specificat”mn for
MIL-R-10509 9.1 Resistor, Fixed Film (High Reliability), General Specification for
MIL-GI0950 10,1 Capacitor, Fixed, M’ka Dielectric, Button Style, General Specification
for
MIL-C-11OI5 10.1 Capacitor, Fixed, Ceramic Dielectric (General Purpose), General

Specification for
MlL-C-l 1272 10.1 Capacitor, Fixed, Glass Dielectric, General Specification for
2-2 Supersedes page 2-2 of Revision F

MIL-HDBK-217F
NOTICE 2
MlL-C-l 1693 10.1 Capacitor,

Feed Through, Radio Interference Reduction AC and DC,
(Hermetkally Sealed in Metal Cases) Estabiishd and Nonestablished
Reliability, General Specificatbn for
MlL-R-l 1804 9.1 Resistor, Fixed, Film (Power Type), General Specificat”mn for
MIL-S-12211 14,1 Switch, Pressure
MlL-S-l 2285 ?4.1 Switches, Thermostatic
MIL-S-12883 15.3 Sockets and Accessories for Plug-h Electronic Components, General
Specification for
MIL-G12889 10.1 Capacitor, By-f%ss, Radio - Interference Reduction, Paper Dielectric,

AC and DC, (Hermetically Sealed in Metaiiic Cases), General
Specificatbn for
M!L-R-12934 9.1 Resistor, Variabie, Wirewound, Precision, General Specification for
MIL-S-13484 14.1 Switch, Sensitive: 30 Votts Direct Current Maximum, Waterproof
MIL-C-13516 14.2 Circuit Breakers, Manual and Automatic (28 Voits DC)
MIL-S-13623 14.1 Switches, Rotary: 28 Voit DC
MIL-R-13718 13.1 Reiays, Electromagnetic 24 Volt DC
MIL-S-13735 14.1 Switches, Toggle: 28 volt DC
MIL-G14409 10.1 Capacitor, Vadable (Piston Type, Tubuiar Trimmer), General

Spectfioatbn for
MIL-F-15160 22.1 Fuse, instrument, Power and Teiephone
MIL-S-1S291 14.1 Switches, Rotary, Snap Action and DetenVSpring Return Action,
MIL-C-15305 11.2 Coils, Electrical, Fixed and Variable, Radio Frequency, Generai
Specification for
MIL-G15370 15.1 Couplers, Directional, Generai Specification for
MIL-F-15733 21.1 Fiiters and Capacitors, Radio Frequency Interference, Generai

Specification for
MIL-S-15743 14.1 Switches, Rotary, Enclosed
MIL-G18312 10.1 Capacitor, Fixed, Metallized (Paper, Paper Piastic or Piastic Film)
Dielectric, Direct Current (Hermetically Sealed in Metal Cases), General
Specification for ‘
MIL-F-18327 21.1 Filter, High Pass, Low Pass, Band Pass, Band Suppression and Dual
Functioning, General Specification for

tvllL-HDBK-217F
NOTICE 2

—
ML-R-18546 9.1 Resistor, Fixed, Wkewound (Power Type. Chassis Mounted), General
Specification for
MlL-S-l 9500 6.0 Semiconductor Device, General Specification for
MIL-R-19523 13.1 Relays, Control
MIL-R-19648 13.1 Relay, Time, Delay, Thermal, General Specif”~at”kmfor
MIL-G19978 10.1 Capacitor, Fixed Plastic (or Paper-Plastic) Dielectric (Hermetically

SeaJed in Metal, Ceramic or Glass Cases), Established and
Nonestablished ReliaMlity, General Specificat”bn for
MIL-T-21038 11.1 Transformer, Puke, Low Power, General Specification for
MIL-G21097 15.1 Connedor, Electrical, Printed Wking Board, General Purpose, General
Specification for
MIL-s-212n 14.1 Switches, L“quid Level, General Specification for
MIL-G21617 15.1 Ccmnectors, Plug and Receptacle - Electrical Rectangular, Polarized

Shell, Miniature Type
MIL-R-22097 9.1 Resistor, Variable, Nonwirewmnd (Adjustment Types), General

Specification for
MIL-S-22614 14.1 Switches, Sensitive
MIL-R-22664 9.2 Resistor, FMed, Film, Insulated, General Specifioatiin for
MIL-S-2271O 14.4 Switches, Code Mcating Wheel (Printed Circuit), (Ttwmbwheel, In-1ine
and Pushbutton), General Specification for
MIL-S-22865 14,1 Switches, Pushbutton, Illuminated, General Specif”ution for
MIL-G22992 15.1 Connectors, Plugs and Receptacles, Electrical, Water-ProOf, Quick

Di-nnect, HeavyDutyType, General Specification for
MIL-C23163 10.1 Capacitors, Fixed or Variable,

Vacuum or Gas Dielectric, General
Specification for
MIL-CX23269 10.1 Capacitor, Fixed, Glass Dielectric, Established Reliability, General

Specification for
MIL-R-23285 9.1 Resistor, Variable, Nonwirewound, General Specificat”mn for
MIL-F-23419 22.1 Fuse, Caflridg8, Instrument Type, General Specification for
MIL-T-23648 9.1 Resistor, Thermal, (Thermally Sensitive Resistor), Insulated, General

Specification for
MS-24055 15.1 Connector, Plug-Receptacle, Electrical, Hexagonal, 9 Contacts,

Female, 7.5 Amps
MS-24056 15.1 Connector, Plug-Receptacle, Electrical, Hexagonal, 9 Contacts, Male,

7.5 Amps

MIL-HDBK-217F
NOTICE 2
MIL-C-24308 15.1 Connectors, Eiectric, Rectangular, Nonerwironmental, Miniature,

Polarized Shell, Rack and Panel, General Specdicatbn for
MIL-S-24317 14,1 Switches, Mu!tistation, Pushbutton (Illuminate and hlon-l!luminated),

MIL-C-25516 15.1 Connector, Electrical, Miniature, Coaxial, Environment Resistant Type,

MIL-C-26482 15.1 Connector, Electrical (Wcular, Miniature, Quick Disconnect,

Environment Resisting), Receptacles and Plugs, General Specificat”bn
for
ML- C-26500 15.1 Connectors, General Purpose, Electrical, Miniature, Ckcular,

Environment Resisting, General Spedficat’bn for
MIL-R-27208 9.1 Resistor, Variable, Wlrewound, Nonprecis”on, General

Specificat’mn for
MIL-C-28731 15.1 Connectors, Electrical, Rectangular, Removable Contact, Formed

Blade, Fork Type (For Rack and Panel and Other Applicat”bns), General
Specification for
MIL-C28748 15.1 Connector, Plug and Receptacle, Rectangular, Rack and Panel, Solder
Type and Crimp Type Contacts, General Specifiiion for
MIL-R-28750 13.2 Relay, Sol”d State, General Specification for
MIL-C-28804 15.1 Connectors, Plug and Receptacle, Electrio Rectangular, High Density,
Polarized Center JackScrew, General Specification for, Inactive for New
Designs
MIL-G28840 15.1 Connector, Electrical, Circular Threaded, High Density, High Shock
Shipboard, Class D, General Specification for
MIL-M-3851O 5.0 Microcircuits, General Specification for
MIL-S-385= 15.3 Sockets, Chip Carrier, Ceramic, General Specification for
MIL-H-38534 5.0 Hybrid Micmcirdts, General Specification for
MIL-I-38535 5.0 Integrated Wcuits (Microcircufis) Manufacturing, General

SpedficatiOn for
MIL-G38999 15.1 Connector, Ekctrical, Circular, Miniature, High Density, Quick

Disconnect, (Bayonet, Threaded, and Breech Coupling) Environment
Resistant, Removable Crimp and Hermetic Solder Contacts, General
Specification for
MIL-G39001 10.1 Capacitor, Fixed, Mica-Dielectric, Established Reliability, General

Specification for
MIL-R-39002 9.1 Resistor, Variable, Wkewound, Semi-Precision, General Specification

for
MIL-C-39003 10.1 Capacitor, Fixed, Electrolytic, (Solid Electrolyte), Tantalum,

Established Reliability, General Specification for

MIL-HDBK-217F
NOTICE 2

—
MIL-R-39005 9.1 Resistor, Fixad, Wirewound (Accurate), Established Reliability, General

Specification for
MIL-G39006 10.1 Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte) Tantalum

Established Reliability, General Specification for
MIL-R”39007 9.1 Resistor, Fixed, Wkewound (Power Type), Established Reliability,

MIL-R-39008 9.1 Resistor, Fixed, Composition (Insulated), Established Reliability,

MIL-R-39009 9.1 Resistor, Fixed, WmMVOund (Power Type, Chassis Mounted)

Established Reliabiiii, General Specification for
MIL-G3901O 11.2 Coils, Electrical, FMed, Radio Frequency, Molded, Established

Reliability, General Specification for
MIL-C-39012 15.1 Connector, Coaxial, Radio Frequency, General Specification for
MIL”C-39014 10.1 Capacitor, Fixed, Ceramic Dielectric (General Purpose), Established

Reliability, General Specification for
MIL-R-39015 9.1 Resistor, Variable, Wlrewound (Lead Screw Actuated), Established

ReliatWty, Genera! Specification for
MIL-R-39016 13.1 Relay, Electromagnetic, Established Reiiabiiity, General Specification

for
MIL-R-39017 9.1 Resistor, Fued, Fiim (Insulated), Established ReiiabNty, General

Specif.kdon for
MIL-C-39018 10.1 Capacitor, Fwed, Ekctrofytic (Aluminum Oxide), Established Reliability

and Nonestablished Reliability, General Specification for
MIL-G39019 14.5 Circuit Breakers, Magnetic, Low Power, Seaied, Trip-Free, General
Specification for
MIL-C-39022 10.1 Capacitors, Fixed, Metaiiued, Paper-Plastic Film or Piastic Film

Dielectric, Direct and Alternating Current (Hermetically Sealed in Metal
or Ceramic Cases), Established Reliability, General Specification for
MIL-R-39023 9.1 Resistor, Variabie, Nonwirewound, Precision, Generai Specification for
MIL-R-39035 9.1 Resistor, Variable, Nonwirewound (Adjustment Type), Established

Rel.&ility, General Specification for
MIL-S-45885 14.1 Switch, Rotary
MIL-C-49142 15.1 Connectors, Piugs and Receptacle, Eiectricai Triaxiai, Radio

Frequency, Generai Specification for
MIL-G55074 15.1 Connectors, Plug and Receptacle, Teiephone, Eiectrcal, Subassembly

and Accessories and Contact Assembiy, Electrical, General
Specification for
MIL-P’55110 15.2 Printed Wiring Board, General Specifi~tion for
MIL-R 55182 91 Resistor, FIxd, Film, Es!abl(shed Reliability, General Specification for

MII--HDBK-217F
NOTICE 2
MIL-C-55235 15.1 Connectors, Coaxial, Radio Frequency, Series TPS
MIL-C-55302 15.1 Connector, Printed Circuit, Subassembly and Aaessories
MIL-A-55339 15.1 Adaptors, Connector, Coaxial, Radio Frequency, (Between Series and
Within Series), General Specification for
MIL-R-55342 9.1 Resistors, Fixed, Film, Chip, Established Reliability, General

Specification for
MIL-C-55365 10.1 Capacitor, Fixed, Electrolytic (Tantalum), Chip, Established Reliability,

MIL-S-55433 14.1 Swhches, Reed, General Specification for
MIL-C-55514 10.1 Capacitors, Freed, Plastic (or Metallized Plastic) Dielectric, DC or DC-
AC, In Non-Metal Cases, Established Reliability, General Specification
for )
MIL-G55629 14.5 Circuit Breaker, Magnetic, Unsealed, or Panel Seal, Trip-Free, General
Specification for
MIL”T-55631 11.1 Transformer, Intermediate Frequency, Radio Frequency and

Discriminator, General Specification for
MIL-G55681 10,1 Capacitor, Chip, Multiple Layer, Fixed, Unencapsulated Ceramic

Dielectric, Established Reliability, General Specification for
MIL-G8151 1 15.1 Connedor, Electriil, Circular, Hgh Densky, Ouick Disconnect,

Environment Resisting and Accessories, General Specification for
MIL-S-81551 14.1 Switches; Toggle, Hermetically Sealed, General Specification for
MIL-C-81659 15.1 Connectors, Electrical Rectangular, Crimp Contact
MIL-S-82359 14.1 Switch, Rotary, Variable Resistor Assembly Type
MIL-(X3383 14.5 Circuit Breaker, Remote Control, Thermal, Trip-Free, General

Specification for
MIL-R-83401 9.1 Resistor Networks, Fixed, Film and Capacitor-Resistor Networks,

Ceramic Capacitors and Fixed Film Resistors, General Specification for
MIL-C-83421 10,1 Capacitors, Freed Metallued Plastii Film Dielectric (DC, AC or DC

and AC) Hermetically sealed in Metal or Ceramic Cases, Established
Reliabil”~, General Specification for
MIL-C+3446 ‘ 11.2 Coils, Radio Frequency, Chip, Fixed or Variable, General Specification
for
MIL-C-83500 10,1 Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum Cathode,

MIL-S-83504 14,1 Switches, Dual In-Line Package (DIP), General Specification for
MIL-C-83513 15.1 Connector, Electrical, Rectangular, Microminiature, Polarized Shell,

New Page 2-7
_-e_-.—
----—
--— —..—
--=—=—a=—==.—a
.-A._...._.
- .. ___
. ____ ____ —————
MIL-HDBK-217F
NOTICE 2
MIL-C-83515 15.1 Connectors, Telecommunication, Polarized Shell, General Specification

for
MIL-R-83516 13.1 Relays, Reed, Dry, General Specification for
MIL-C-83517 15.1 Connectors, Coaxial, Radio Frequency for Coaxial, Strip or Microstrp
Transmission Line, General Specification for
MIL-R-83520 13.1 Relays, Electromechanical, General Purpose, Non-Hermetically Sealed,

Plastic Enclosure (Dust Cover), General Specification for
MIL-G83527 15.1 Connectors, Plug and Receptacle, Electrical, Rectangular Muttiple

Insert Type, Rack to Panel, Environment Resisting, 15~C Total
Continuous Opemting Temperature, General Specification for
MIL-R-83536 13,1 Relays, Electromagnetic, Established Reliability, General Specification

for
MIL-C-83723 15.1 Connector, Electrical (Circular Environment Resisting), Receptacles

and Plugs, General Specification for
M!L-R-83725 13.1 Relay, Vacuum, General Specification for
MIL-R-83726 13.1, 13.2, Relays, Hybrid and Solid State, Time Delay, General Specification for
13.3
MIL-S-83731 14.1 Switch, Toggle, Unsealed and Sealed Toggle, General Specification for
MIL-G83733 15.1 Connector, Electrical, Miniature, Rectangular Type, Rack to Panel,

Envhnment Resistkg, XKY’C Total Continuous Operating
Temperature, General Specifiiion for
MIL-S-83734 15.3 Sockets, Plug-In Electronic Components, Dual-In-Line (DIPS) and

Single-In-Line Packages (SIPS), General Specification for
MIL-M5028 15.1 Connector, Electrical, Rectangular, Individual Contact Sealing,

Polarized Center JackScrew, General Specification for
STANDARD
MIL-STD-756 Reliability Modeling and Prediction
MIL-STD-683 Test Methods and Procedures for Microelectronics
MIL-STD-975 NASA Standard Electrical, Electronic and Electromechanical (EEE) Parts List
MIL-STD-1547 Electronic Parts, Materials and Processes for Space and Launch Vehicles,
Technical Requirements for
MIL-STD-1772 Certification Requirements for Hybrid Microcircuit Facilities and Lines
Copies of specifications and standards required by Contracbrs in connection with specific acquisition
functions should be obtained from the contracting activity or as directed by the contracting officer. Single
copies are also available (without charge) upon written request to:
Standardization Oocument Order Desk, 700 Robim AVe , Wilding ~, section D,

Ph(ladelphla, PA 19111-5094, (215) 697-2667
2-8 New Page

MIL-HDBK-217F
NOTICE 2
5.1 MICROCIRCUITS, GATE/LOGIC ARRAYS AND MICROPROCESSORS
DESCRIPTION
1. Bipolar Devices, Digital and Linear Gate/Logic Arrays
2. MOS Devices, Digital and Linear Gate/Logic Arrays
3. Field Programmable Logic Array (PLA) and
Programmable Array Logic (PAL)
4, Microprocessors
kp = (cl fi~ + C2fiE) ~QfiL ‘ailures~l 06 Hours
- Digital and Linear Gate/Logic Array Die Complexity Failure Rate - Cl

T Linear PLA/PAL
Digital
I c, No. Gates c,
I c,
No. Gates No. Transistof$ I
t
.0025 1 to 100 .010 up to 200 .010
to
1 100 .021
.0050 101 to 300 .020 201 to 1,000
101 to 1,000 .042
.010 301 to 1,000 .040 1,001 to 5,000
1,001 to 3,000
.020 1,001 to 10,000 .060
3,001 to 10,000
10,001 to 30,000 .040
30,001 to 60,000 .080
~ Linear and Digital Gate/Logic Array Die Gomplex~ Failure Rate -Cl ●
Linear PLA/PAL
Digital v c, No. Gates c,
No. Gates c, No, Transistor I
1 .010 up to 500 .00085

1 to 100 .010 to 100
.0017
101 to 300 .020 501 to 1,000
101 to 1,000 .020
2,001 to 5,000 .0034
1,001 to 3,000 .040 301 to 1,000 .040
1,001 to 10,000 .060 5,001 to 20,000 .0068
3,001 to 10,000 .080
10,001 to 30,000 .16
30,001 to 60,000 .29
‘NOTE: For CMOS gate counts above 60,000 use the Vi+ SIC/VHSIC-Like modei In Section 5.3
rocm All Other Model Parametef’s

Parameter Refer to ,
Die Complexi~ Failure Rate - Cl \ 1
E=F==7
MO.S Section 5.8
XT
c,
C2 section 5,9
Up to 8 .060 ,14
7tE, flQ, XL Section 5.10

Up to 16 .12 .28
A
Up to 32 .24 ,56
5-3
Supersedes page 5-3 of Revision F
,-- ----- - —_=...= ------ _____ -_ ——_
_ .
All GAQ =*Q AW -w......-. baw. -“ -....-= -- ----
MIL-HDBK-217F
MEMORIES
5.2 MICROCIRCUITS,
—
DESCRIPTION
1. Read Only Memories (ROM)
2. Programmable Read Only Memories (PROM)
3. Ultraviolet Eraseable PROMS (UVEf’ROM)
4. “Flash,” MNOS and Floating Gate Electrically
Eraseable PROMS (EEPROM). Includes both d
floating gate tunnel oxide (FLOTOX) and texture
polysilicon type EEPROMS
5. Static Random Access Memories (SRAM)
R
w. ~vnamic Random Access Memories (DRAM)
_=. .—
Acyc) XQ XL Failures/l 05 Hours

kp=(C1XT+C2YCE+
Die Complex~ Failure Rate - Cl t

Bipolar ,
MOs
PROM, SRAM
UVEPROM* (MOS & ROM,
PROM SRAM
EEPROM, DRAM BiMOS)
ROM
Memory Size, B (Bits) mPROM
.0078 .0094 .0052

.00085 .0013
up to 16K
.00065
.016 .019 .011
.0013 .0017 .0025
16 K< BSWK .031 .038 .021
.0034 .0050
.0026 .075 .042
64K<BS2%K .0068 .010 .062
.0052
256K < B s IM
,
A2 Faaor for LCYCCalculation
+ Fatior for Acyc Calculation
L
+ Total NO. Of
Total No. Of Programming Cycles Textured-Poiy A2
Textur8d-
prograrnmin9 OV&%PF \OM Life, C
I
Cycles Over Flotoxl Pol? 1
~EPROM Life, C up to 300K
o
.00070 .0097 1.1
Jp to100 300K c C s 400K
.0014 .014
100< c s 200
.0034 .023 2.3 +
200< CS 500 400K < C s 500K
.0068 .033
500<cs1K
.020 .061
1K<CS3K A!! Other Model Parametem
.049 .14 v
3K<CS7K parameter Refer to
.10 .30
7K<CS15K
.14 .30
15K < C s 20K Section 5.8
.20 .30 XT
20K < C s 30K
.68 .30
30K< C s 100K section 5.9
.30 C2
100K < C s 200 K 1.3
,30
200K < C s 400 K 2.7
~E,
Section 5.10
.30 ~Qt XL
400K < C s 500 K 3.4 1
k Cyc
Page 5-5
(EEPRoMs
1. Al= 6.817 X 10-6 (C) only)
2. No underlying equation for Textured-
Poly.
L ~yc = 0 For a}! other devices
MIL-HDBK-217F
NOTICE 2
5.2 MICROCIRCUITS, MEMORIES
EEPROM ReadWrite Cycling Induced Failure Rate - Acyc

?bO
Cyc =
All Memo~ Devices Except Flotox and
Textured-Poly EEPROMS A*B2
Al B, + ~ ‘ECC
c= 1
Flotox and Textured Poly EEPROMS ~[
P*
Page 5-4
Page 5-4
Al page 5-6
page 5-6
B4 - A Page 5-5
Apu
A2 pie 5-6
02-0
02 Sedion 5.1o
Sectiorl 5.1o
ltQ
=1.0
Error Corred”mn Code (ECC) Options: fi~~~ = 1.0 %CC
1. No On-Chip ECC = .72
~EcC = .72 ‘ECC
2. On-Chip t-tammi~ Code ~~~c = .66
~EGC = “=
3. Two-Needs-One
Redutiant Cell APP~ti
IW)TES: 1. See Referen@ 24 for rnodeliWl off~~p error detectbn and com@bn
schemes at the memq system level.
2. If EEPROM type is unkmw, assure Fbtox.

some EEPROM manufadurem have inco~rated
3. Error Coff@ion Code Opt@ns:
on+hip error corred~n cimuitfY into their EEPROM dev”wes. This is represetied by
Other manufadurem have taken a redundant cell
the on-chip hammin9 code entw.
apprOach whiih imrpo~~ an extra storag9 transistor in Ovefy memo~ Cell. Thk
is represe~ed by the two-needs~ne redutia~ cell ent~.
4. The Al ancf 4 factom shown in Section 5.2 wem deveb~d based on an assumed
For EEPROMS used in systems with
system Iiie of 10,000 operatin9 hours.
s“~nifiatily longer or shofier expe~ed Iiietimes the Al and ~ factom should be \
~ttiplied by:
I
System Lifetime Operating Hours
10,000
5-5

MIL-HDBK-217F
NOTICE 2
5.2 MICROCIRCLJITS, MEMORIES
r 1
II
m“
4
iii
+
$!
m I 8
n
t?
m- z II
t+ m
T :’----- V.-d.
-r.,
MIL-HDBK-217F
NOTICE 2
5.5 MICROCIRCUITS, HYBRIDS
DESCRIPTION
Hybrid Microcircuits
~= [z Nc kc] (I + .2zE ) YCFnQZL Fail.reN106 Ho.m
Nc = Number of Each Particular Component

kc = Failure Rate of Each Pafiicular Component
The general procedure for developing an overall hybrid failure rate is to calculate an individual failure rate
for each component type used in the hybrid and then sum them. This summation is then modified to
account for the overall hybrid function (XF), screening level (@, a~ matUritY (XL). The hybfid Packa9e
failure rate is a function of the active component failure modified by the environmental factor (i.e., (1 + .2
~E) ). Onw the component types listed in the folbwing ti3bi8 are considered to contribute S@’ItiiCWItly to
the overall failure rate of most h@rids. All other component types (e.g., resistors, inductors, etc.) are
cons”tiered to contribute insignif”~ntty to the overall hybrid failure rate, and are assumed to have a failure
rate of zero. This simplificationis valid for most hybrids; however, if the hybrid consists of mostly passive
cornmments then a failure rate should be calculated for these devices. If factorina in other com~onent .
type~, aWme ~Q = f, XE’1 and TA = Hybrid Case Temperature for these calculatbk.
Determination of kc
Determine kc for These Handbook Section Make These Assumptions When Determining
xc
Component Types
Microcircuits 5 c2=0~zQ=’1~ = 1, TJ as Determined from

Smion 5.12, ~p = O (for WWC).
Discrete Semiconductors 6 ZQ = 1, nA = 1, TJ as Determined from Section

6.14, nE = 1.
Capacitors 10 ~=l’TA
= Hybrid Case Temperature,
I?cpl.
NOTE: tf maximum rated stress for a die is unknown, assume the same as for a discretely package
die of the same type. If the same die has several ratings based on the discrete packaged
type, assume the lowest rating. Power rating used should be based on case temperature
for discrete semiconductors.
Circuit Function Factor - F All Other Hybrid Model Parameters

Circuit Type I I
I
~F
I I
~~, ~Q, ~E Refer to Section 5.10
Digital 1.0
Video, 10 MHz< f <1 GHz 1.2
Mcrowave, f >1 GHz 2.6
Linear, f <10 MHz 5.8
Power 21
MIL-HDBK-217F
5.6 MICROCIRCUITS, SAW DEVICES
DESCRIPTION
Surface Acoustic Wave Devices
Quality Factor - ZQ Environmental Factor - nE

—
Screening Level 7CQ Environment ~E
GB .5
10 Temperature Cycles (-55°C to .10
+125°C) with end point ektrkd % 2.0
tests at temperature extremes.
% 4.0
None beyond best commetil 1.0 Ns 4.0
practices.
Nu 6.0
Alc 4.0
‘IF 5.0
%c 5.0
‘UF 8.0
‘RW 8.0
SF .50
MF 5.0
ML 42
CL 220
5-1o
MIL-HDBK-217F
NOTICE 2
5.13 MICROCIRCUITS, EXAMPLES
-iimr imim %rFFir TrFiF Si Diode Source
8 14 3 3 2 Vendor Spec. Sheet

No. of Pins
.33 .35 .6 .6 .42 Circuit Analysis

Power Dissipation,
pD (W)
.0041 .0065 .0025 .0025 .0022 Equ. 2 Above
Area of Chip (in.*)
50.3 50.3 56.3 Equ. 1 Above
eJ~(%NV) 30.8 19.4
75 72 95 95 89 Equ. 3 Above
TJ (%)
2. Calculate Failure Rates for Each Component:
A) LMI 06 Die, 13 Transistors (from Vendor Spec. Sheet)
Section 5.1
Because C9 = O;
XT: %WiOn 5.8; XQ, XL Defau~ to 1.0
,
= (.01)(3.8)(1)(1) = .038 Failure#l 06 Flours
B) LM741 Die, 23 Transistors. Use Same Procedure as Above.
= cl XT ~Q XL = (.01)(3.1)(1)(1) = ’031 ‘ailured106 ‘oum

$
c) Sificon NPN Transistor, Rated Power= 5W (From Vendor ~ec. Sheet), VcE~CE() = .6,
Linear Application
SOCtiOn 6.3; nA, ~Qt ~E oefau~ to 1.0
~ = %~T~AnR%ZQXE
= (.00074) (3.9)(~ .0)(1 .8)(.29) (1)(1)
6 .0015 Failures/l 06 Hours
D) Silicon PNP Transistor, Same as C.
.0015 Failures/l 06 Hours
E) SiliconGeneral Purpose Diode (Analog), Voltage Stress = 600/’, Metallurgically Bonded

Construction.
Section 6.1; ZQJ XE Defau~ to 1.0

‘P = k) ‘T % ‘C ‘Q ‘E
= (.0038)(6.3)(.29)(1)(1)(1)
= .0069 Failures/l 06 Hours
5-23
MII--HDBK-2I 7F
NOTICE 2
5.13 MICROCIRCUITS, EXAMPLES
F) Ceramic Chip Capacitor, Vottage Stress = 50Y0,

‘A= ‘CASE for the Hybrid, 1340 pF, 125°C Rated Temp.
= lb ncv ~Q ~E Section 10.1 1; XQ, ~E Default to 1.0

‘P
= (.0028)(1.4)(1)(1)
G) Thick Film Resistors, per instructions in Section 5.5, the contribution of these devices is
considered insignificant relative to the overall hybrid failure rate and they may be ignored.
= [Z NcLc](l +.27cE)71F7ypL
%
~E = 6.0 Section 5.10

fiF = 5.8 Section 5.5
ICQ = 1 Section 5.10
XL = 1 Section 5.10
%
= [ (1)(.038)+(1)(.031)+ (2) (.0015)+ (2) (.0015)
+ (2)(.0069) + (2)(.0039) ](1 + .2(6.0)) (5,8) (l)(1)
= 1.2 Failures/l 06 Hours

%
5-24 Supersedes page 5-24 of Rewsion F

MIL-HDBK-217F
6.0 DISCRETE SEMICONDUCTORS, INTRODUCTION
The semiconductor transistor, diode and opto-electronic device sections present the failure rates on
the basis of device type and construction. An analytical model of the failure rate is also presented for each
device category. The various types of discrete semiconductor devices require different failure rate
models that vary to some degree. The models apply to single devices unless otherwise noted. For
multiple devices in a single package the hybrid model in Section 5.5 shouid be used.
The applicable MIL specification for transistors, and optoelectronic devices is MlL-S-l 9500. The
(JAN, JANTX, JANTXV) are as defined in MIL-S-19500.
quality levels
The temperature factor (XT) is based On the device Junction temperature” Ju~tiOn temperature
should be computed based on worse case power (or maximum power dissipation) and the device junction
to case thermal resistance. Determination of jmctbn temperatures is expiairwd in Section 6.14.
Reference 28 should be consulted for further detailed information on the modeis appearing h’!this
sect ion.
6-1
MIL-HDBK-217F
NOTICE 2
6.1 DIODES, LOW FREQUENCY
DESCRIPTION
SPECIFICATION
fvllL-s-19500 Low FrequenCy Diodes: General Purpose Analog, Switching,
Fast Recovery, Power Rectifier, Transient Suppreswr, Current
Regulator, Voltage Regulator, Voltage Reference
Temperature Factor - ~
Base Failure Rate - ~
(Voltage Ragukto Vottage Reference,
Diode TyDe/Application
-. ,. I % and Curre S!?94!a
TJ (~) %T TJ ~)
General PUIPOW Analog .0038
Switching .0010 1.0 105 3.9
25
Fast Recovery Power Rectifier .025 110 4.2
30 1.1
Power Rectifier/Schoflky .0030 115 4.5
35 1.2
power Diode 40 1.4 120 4.8
Power Rectifier with .0050/ 1.5 125 5.1
Junction
45
High Voltage Stacks 1.6 130 5.4
.0013 50
Transient SuppressorNaristor 55 1.8 135 5.7
Current Regulator .0034 140 6.0
60 2.0
Vottage Regulator and Voltage .0020 145 6.4
65 2.1
Referencx? (Avalanche 70 2.3 150 6.7
and Zener) 75 2.5 155 7.1
2.7 160 7.5
80
Terrperatum Factor - XT 3.0 165 7.9
85
Fast RmvwY, 3.2 170 8.3
(General Purrmse Anak Switching, 90
nsient Su r sor 3.4 175 8.7
Pov 95
q
TJ (oC)
5 T ~ (“C) %T 100 3.7
1 1
4
9.0
((
25 1.0 105 -1925 ‘-—
XT = exp TJ + 273 298
30 1.2 110 10 ))
35 1.4 115 11
12
40 1.6 120
14
It=
bJ
Junction Temperature (“C) I
45 1.9 125
15 I
I
50 2.2 130
55 2.6 135 16
60 3.0 140 18
65 3.4 145 20
70 3.9 150 21
75 4.4 155 23
80 5.0 160 25
85 5.7 165 28
90 6.4 170 30
95 7.2 175 32
100 8.0
E
1 1“
~T = exp
((.3091 —-—
TJ ~ 273 298
))
Juncllon Temperature (“C)

?J =
1

6-2
t
MIL-HDBK-217F
NOTICE 2
7.2 TUBES, TRAVELING WAVE
DESCRIPTION
Traveling Wave Tubes
~ = +pE Failures/l 06 Hours
Environment Factor - ZF
Base Failure Rate - ~ \
Environment ~E
Frequency (GHz)
,1 1 2 4 6 8 10 14 18
power ~ GB .5
10 11
11
12
12
13
13
16 19 24 29
16 20 24 29
42
42
61
61 I GF
I 1.5
7.0
;Z 11 12 13 16 20 24 29 42 61 GM
1000 11 12 13 16202429U@
1720242943@ Ns 3.0
3000 11 12 14
5000 12 13 14 1720253044U 10
12 13 14 17212631ti S NU
8000 r
12 13 15 18 22 26 32 ~~ ~y
10000 5.0
15000 13 14 15 19 23 27 33 Alc
20000 14 15 16 20 24 29 35 51 75 7.0
30000 15 16 18 22 26 32 39 56 83 ‘IF
17 18 20 24 29 35 43 62 91 6.0
>40000 ‘Uc
9.0
11(1.00001)P (1.l)F ‘UF
k)” 20
Am
P = Rated Power In Watts (Pew, lf pum, .05
.001 s P <40,000 SF
MF 11
F - Operating Frequency In GHz, .1 S F S 18
I ML 33
If the operating freque~ is a band, or two different
values, use the geometdc mean of the end point c, I 500
frequendes when using table.
i
7-3
——— --------—---
-*-+-*-
MIL-HDBK-217F
7.3 TUBES, MAGNETRON
DESCRIPTION
Magnetrons, Pulsed and Continuous Wave (CW)
Lp = kb7r”7cc7tE Failures/l 06 Hours

Frequency (GHz)
50 60 70 80 90 100
.1 .5 1 5 10 20 30 40
P(MW) 150 170 190 200 220
91 110 130
.01 1.4 4.6 7.6 24 41 67 210 230 260 280 300
120 150 180
.05 1.9 6.3 10 34 56 ‘3 240 270 290 320 350
110 140 180 210
.1 2.2 7.2 12 39 ~ 330 370 400 430
130 180 220 260 300
.3 2.8 9.o 15 48 80 410 440 480
17 54 89 150 200 2@ 290 330 370
.5 3.1 10 380 420 470 510 550
3.5 11 19 100 170 230 280 ~o
210 2W 3= 410 470 530 580 830 ~o
: 4.4 14 24 : 130 700 760 -
140 230 310 390 @ 520 Wo ~o
5 4.9 16 26 ~
I
CW Magnetrons (Ratad Power < 5 KW):
Pulsed Magnetrons:
$-18
19( F)-73 (P)-20
b =
F= operating FrequenCy in GHz, .15 F <100
P= outout Power in MW, .01 SP<5
Environment Factor - nE
LMllization Factor - ZI I u
7 Environment ~E
Utilization (Radiate HOUN
Filament HoufS) %U 1.0
GB
0.0
0.1
.44
.50 I GF
I 2.0
4.0
I
0.2 .55 GM
.61 I
0.3 Ns 15
0.4 .66 I
0.5 .72 Nu 47
0.6 .78
.83 10
0.7 *IC
0.8 .89 16
0.9 .94 ‘IF
12
*UC
23
I
‘UF
I Xu = 0,44 + 0.56R
Antfil 80
I
ri 7
i - ‘nvv
R = Radiate HourWFilament Hours
I
Construction Factor - nc
ML 133
Construction 7tc
CL 2000
I CW(RatWPower.5~ I 1.0 I
1.0
I
Coaxial Pulsed
Conventional Pulsed 5.4
7-4
MIL-HDBK-217F
NOTICE 2
9.1 RESISTORS
~T Tabie XS Table
Resistor Style Specification Description
% Use Use
MiL-R-
Column: Column:
i
Rc 11 Resistor, Fixed, Composition (Insulated) .0017 1 2
RCR 39008 Resistor, Fixed, Composition (Insuiated) Est. Rel. .0017 1 2
RL 22684 Resistor, Fixed, Film, Insuiated .0037 2 1
RLR 39017 Resistor, Fixed, Film (Insulated), Est. Rei. .0037 2 1
RN (R, C Of N) 55182 Resistor, Fixed, Film, Est*iishd ReiiabMy .0037 2 1
RM 55342 Resistor, Fued, Fiim, Chip, Estabiisti Reiiabiiity .0037 2 1
RN 10509 Resistor, Fixed Film (High Sttitiity) .0037 2 1
RD 11804 Resistor, Fixed, Film (Power TYW) .0037 WA, XT= 1 1
RZ 83401 Resistor Networks, Fixed, Film ,0019 1 NIA ns = 1
RB 93 Resistor, Fixed, Wkewound (Accurate) .0024 2 1
RB R 39005 Resistor, Fixed, Wirewound (/@curate) Est. Rel. .0024 2 1
RW 26 Resistor, Fixed, Whwound (Power TyTw) .0024 2 2
RWR 39007 Resistor, Fiied, Wkewound (Power Type) Est.ReL .0024 2 2

RE 18546 Resistor, I%ed, Whewound (Power TYPS, Ch-k .0024 2 2
Mounted)
RER 39009 Resistor, Freed, Whewound (Power Type, Chassis .0024 2 2

Mounted) Est. Rel.
RTH 23648 Thermistor, (Thermally Sensitive Resistor), .0019 N/A, XT= 1 t’lrots=~
Insuiated
RT 27208 Resistor, Variabie, Wirewound (Lead Screw .0024 2 1

Activated)
RTR 39015 Resistor, Variable, Wirewound (Lead Screw .0024 2 1

Activated), Established Reliability
RR 12934 Resistor, Variabie, Wwewound, Precision .0024 2 1
RA 19 Resistor, Variable, Wkewound (Low Opwating .0024 1 1

Temperature)
RK .39002 Resistor, Variable, Wkewound, Semi-Precision .0024 1 1
RP 22 Resistor, Wkewound, Power Type .0024 2 1
RJ 22097 Resistor, Variable, Nonwirewound .0037 2 1
RJR 39035 Resistor, Variable, Nonwirewound Est. Rel. .0037 2 1
RV 94 Resistor, Variabie, Composition .0037 2 1
RQ 39023 Resistor, Variable, NonwireWound, Precision .00 37 1 1
RVC 23285 Resistor, Variable, Nonwirewound .00 37 1 1
Supersedes Section 9.0-9.17 of Revision F 9-1
.
MIL-HDBK-217F
NOTICE 2
9.1 RESISTORS
-—
Power Factor - Xp
,
Temperature Factor - XT
- np
Column 2 lower Dissipation (Watts)
T(”C) Column 1
.001 .068
,88 .95
20
.01 .17
30 1.1 1.1
.13 .44
40 1.5 1.2
.25 .58
1.8 1.3
50
.50 .76
2.3 1.4
60
.75 .89
70 2.8 1.5
1.0 1.0
80 3.4 1.6
2.0 1.3
90 4.0 1.7
3.0 1.5
100 4.8 1.9
4.0 1.7
110 5.6 2.0
5,0 1.9
6.6 2.1
120
10 2.5
130 7.6 2.3
25 3.5
140 8.7 2.4
50 4.6
10 2.5
100 6.0
-Ea 1 1
(
= exp — 150 1 7.1
‘T .5 m -= ))
8.6 I7x1O (
Kp - (Power Dissipation)”3g
oiumn 1: Ea =.2
olumn 2: Ea -.08
= Resistor Case Temperature. Can be approximate~

as ambient component temperature for low
power dissipation non-power type resistors.
IOTE: XT vaiues shown shdd only be used up to

the temperature rating of the device. For
devices with ratings higher than 150°C, use
the equation to determine nT
9-2 Supersedes page Section 90-9.17 of Revision F
—. -..
MIL-HDBK-217F
NOTICE 2
9.1 RESISTORS
Power Stress Factor - nc Environment Factor - n=

Environment
Power Stress Column 1 Column 2
.79
GB 1,0
.1 .66
GF 4.0
.2 .88 .81
GM 16
.3 .99 1.0
1.1
Ns 12
.4 1.2
Nu 42
.5 1.2 1.5
.6 1.4 1.0
AC 18
.7 1.5 2.3 ‘IF 23
.8 1.7 2.8 ‘Uc 31
.9 1,9 ‘UF 43
3.4
‘RW 63
Column 1: xs s .71e1 “1(S) SF .50
MF 37
Column 2: 7CS= .54e2”W(s)
ML 87
S = Actual Power Dissipation CL 1720
Rated Power
Quality ICQ
Established Reliability Styles

s .03
R 0.1
P 0.3
M 1.0
Non-Established Reliability
Resistors (Most Two-Letter Styles) 3.0
Commercial or Unknown Screening

Level 10
NOTE: Established reliability styles are failure

rate graded (S, R, P, M) based on life testing
defined in the applicable military device
specification. This category usually applies only
to three-letter styles wilh an “R” suffix.
Supersedes Section 9.0-9.17 of Revision F 9-3

MIL-HDBK-217F
NOTICE 2
10.1 CAPACITORS
~p=~nTxcnvx~RfiQ~
EFailures/106 ~C)iJfS
fiT Table - nC Table - xv Table -
;apacitor Spec. Description Use Use Use %R

% Column:
Style MIL-C- Colurnm Column:
1 1 1 1
.00037
P 25 Capacitor, Fixed, Papr-
Dielectrk, Direct Current
(Hermeti=l~ Sealed in Metal
Cases)
1 1 1 1
Capacitor, By-Pass, Radio - .00037
12889
Interferenm Reductbn, Paper
Dieledrb, AC and DC
(Hermetial~ sealed in Metallic
Cases)
1 1 1 1
Capacitor, Feed through, Radio .00037
11693
Interference Reduction AC and
DC (Herm@W~ scald in metal
cases), Established and
blonestablished Reliabil”~
1 1 1 1
.00051
n, CQR 19978 Capacitor, Fixed Plastic (or
Paper-Pl=tk) Dielectric
(Hermetial~ sealed in metal,
oaramic or glass cases),
Estabkhd and NonestWishd
Reliability
,
1 1 1 1
~Ked, Metallizd .00037
x-i 18312 @pacitor,
(P~r, Papr Plastb or Plastb
Film) Dielectrk% Direct Current
(1-iermetkal& Sealed in Metal
Cases)
1 1 1 1
Capacitor, Fixed, Metallizd .00051
39022
Paper, Paper-Pi-tic Fdrn or
Plastic Film Dielectric
1 1 1 1
.00051
55514 Capachor, Fixed, Plastic (or
Metallized Plastic) Diokctrk,
Dire@ Current in Non-Metal Cases -i
1 1 1 1
Capacitor, Fixed Supermetdlud .00051
83421
Plastic Film Dkdectrii (DC, AC or
DC and AC) Hermetical& Sealed
in Metal Cases, Establish
Reliability
2 1 2 1
Capacitom, Fixed, M’ka Dielectric .00076
CM 5
2 1 2 1
Capacitor, Fixed, Mica Dielectric, .00076
39001
Established Reliabilhy
2 1 2 1
Capacitor, Fixed, Mica Dielectric, .00076
C8 10950
Button Style
2 1 2 1
.00076
CY 11272 Capacitor, Fixed, Glass Dieiectr ic
2 1 2 1
.00076
CYR 23269 Capacitor, Fixed, Glass
Dielectric, Established Reliability i
10-1
Supersedes Section 10.1 -10.20 of Revision F
I Ocv . I m . I 1 ml Iuw> 16 eal —>1

MIL-HDBK-217F
NOTICE 2
10.1 CAPACITORS
—
4
n~ Table - nc Table - Xv Table -
Spec. Description Use Use use %R

Capacitor %
Column: Column: Column:
Style MIL-C-
1 3 1
.00099 2
CK 11015 Capacitor, Fixed, Ceramic
Dielectric (General Purpose) 1
2 1 3
.00099
CKR 39014 Capacitor, Fixed, Ceramic
Dielectrk (General Purpose),
Establish Reliabiltiy 1
2 1 3
.00099
cC, CCR 20 CapaCitor, Fixed, Ceramic
Dielectti (Tem~rature
Compensating), Establish and I
Nonestablishd Relitil~
1 3 1
.0020 2
55681 Capacitor, Chip, Muttipk Layer,
FMed, Ceramk Dieled~c,
Established Reiiabil~
2 4 See
.00040 ‘ 1
CSR 39003 Capacfior, Fixed, Electro~ic
%R
(Solid Electrolyte), Tantalum,
Table
Established Reliability
2 4 See
.00005 1
55365 Capacitor, Fixed, Electro~ic
%R
(Tantalum), Chip, Established
Table
Reliability
2 4 1
r .00040 1
CL 3965 Capackor, Fued, Electro~ic ,
(Nonsoiti Electro~e), Tantalum 1
1 2 4
.00040
39006 Capackor, Fixed, Ek@ro~k
(Nonmld ElectI’o~e), Tantalu m,
Establish Reliabil~ 1
1 1 2 4
.00040
83500 Capacfior, Fixed, Electro~ic
(Nonsolid Ele@o~e), Tantal urn
Cathode 1
2 2 1
.000 12
cU, CUR 39018 Capacitor, Fixed, Ebctro~ic
(Aluminum Oxide), Established
Reliabil”~ and Nonestablish* I
Reliability
2 1 1
L .000 12 2
CE 62 Capacitor, Fixed Electrolytic (DC,
Aluminum, Dry Ele@o~e,
Polarized)
1 5 1
.0079 1
Cv 81 Capacitor, Variable, Ceramic
Dieied* (Trimmer) 1
L 2 1 5
.0060
Pc 14409 Capacitor, Variable (Piston Type,
‘ Tubular Trimmer)
1 5 1
.0000072 2
CT 92 Capactior, Vati*le, Ak Die Iectric
(Trimmer)
1 5 1
.0060 1
(% 23183 Capacitor, Fixed or Variable,
Vacuum Dielectric
*
. .
Supersedes Section 10.1 -10.20 of Revlslon F
10-2
I .- I I 1
MIL-t-iDBK-217F
NOTICE 2
10.1 CAPACITORS
Temperature Factor - XT Capacitance Factor - ~,

(
Capacitance,
T(%) Column 1 Column 2 c(~F) Column 1 Column 2
20 .91 .79 .000001 .29 .04
30 1.1 1.3 .00001 .35 .07
40 1.3 1.9 .0001 .44 .12
50 1.6 2.9 .001 .54 .20
60 1.8 4.2 .01 .66 .35
70 2.2 6.0 .05 .76 .50
80 2.5 8.4 .1 .81 .59
90 2.8 11 .5 .94 .85
100 3.2 15 1 1.0 1.0
110 3.7 21 3 1.1 1.3
120 4.1 27 8 1.2 1.6
130 4.6 35 18 1.3 1.9
140 5.1 44 40 1.4 2.3
150 5.6 56 200 1.6 3.4
1000 1.9 4.9
-Ea 1 1
%T
= ‘W ( 8.617 x10-5 ( T + 273 ‘= )) 3000 2.1 6.3
10000 2.3 8.3
Column 1: Ea = .15
30000 2.5 11
Column 2: Ea = .35
60000 2.7 13
T = Capacitor Atiient Temperature 120000
NOTE: 1. fiT values shown should only ~ used

Column 1: ~ = C“og
up to the temperature rating of the
device.
Column 2: ~ = C-23
2, For devices with ratings higher than
150”C, use the equation to determine
XT (for a~li~tions ahve 150”C).
Supersedes Section 10.1 -10.20 of Revision F 10-3
—- I I I 1-1 . . I r Is-1 . . t3-

MIL-I+DBK-217F
NOTICE 2
10.1 CAPACITORS
—
Voltage Stress Fac!or - x,
Voltage Stress Column 1 Column 2 Column 3 Column 4 Column 5

0.1 1.0 1.0 1.0 1.0 1,0
0,2 1.0 1.0 1.0 1.0 1.1
0.3 1.0 1.0 1.1 1.0 1.2
0.4 1.1 1.0 1.3 1.0 1,5
0.5 1.4 1.2 1.6 1.0 2.0
0.6 2.0 2.0 2.0 2.0 2.7
0.7 3.2 5.7 2.6 15 3.7
0.8 5.2 19 3.4 130 5.1
0.9 8.6 59 4.4 990 6.8
1 14 166 5.6
4 * 5900 9.0
F 4
~ 5+1
Column 1: 7CV=
() .6 Column 4: Zv=
()
~
.6
17+1
s 10+1 g 3+1
Column 2: xv = ~ Column 5: %V =
() () .5
& 3+1
Column 3: xv= ,6 Operating Voltage
s=
() Rated Voltage
Note: Operating voltage is the sum of applied DC voltage and peak AC voltage.
Series Resistance Factor

(Tantalum CSR Style CapacitorS Only) - XSR
Circuit Resistance, CR (ohms/vott) —1
%R
>0.8 .66
>0.6 to 0.8 1.0
>0.4 to 0.6 1,3
>0.2 to 0.4 2.0
>0.1 to 0.2 2.7
3.3
<
CR . Eff. Res. Between Cap. and Pwr, Su~~

Voltage Applied to Capacitor
10-4
Supersedes Section 10.1 - 10.20 of Revision F
MIL-HDBK-217F
NOTICE 2
10.1 CAPACITORS
Quality Factor - XO Environment Factor - KE

—
Quality 7rQ Environment fiE
GB 1.0
Established Reliability Styles
o .001 GF 10
c GM 20
.01
Ns 7.0
S,B .03
Nu 15
R .1
AC 12
P .3
‘IF 15
M 1.0 ‘Uc 25
L 1.5 ‘UF 30
‘RW 40
Non-Established Reliability
Capacitors (Most Two-Letter Styles) 3.0 SF .50
MF 20
Commercial or Unknown Screening ML 50
Level 10.
CL 570
NOTE: ~t~tis~reltiil~~l~amfa~re
rate graded (D, C, S, etc.) based on life testing
defined in the applicable military device
specification. This category usually applies only
to three-letter styles with an “R” suffix.
Supersedes Section 10.1 -10.20 of Revision F 10-5

MIL-HDBK-217F
NOTICE 2
10.2 CAPACITORS, EXAMPLE —
Example
Given: A 400 VDC rated capacitor type CQ09A1KE153K3 is being used in a fixed ground
environment, 50”C component ambient temperature, and 200 VDC applied with 50 Vrms @
60 Hz. The capacitor is being procured in full accordance with the applicable specification.
The letters “CQW in the type designation indicate that the specification is MlL-C-l 9978 and that it is a Non-
Established Reliability quality level. The “E” in the designation corresponds to a 400 volt DC rating. The
“’I 53” in the designation expresses the capacitance in picofarads. The first two digits are significant and
the third is the number of zeros to follow. Therefore, this capacitor has a capacitance of 15,000
picofarads. (NOTE: Pioo = 10-12, ~ = 10-6)
Based orI the given information the following modei factors are cfetetmined from the tables shown in
Section 10.1.
lb = .00051
XT = 1.6
Use Table Equation (Note 15,000 pF = .015 PF)
DC Volts Applied + fi (AC Volts Applied~

7CV = 2.9 s=
DC Rated Voltage
200 + dz (50~ . .m
s=
400
$ = ~ ~~c~v %RXQ ‘E = (.00051)(I.6)(.69) (2.9) (1)(3 .O)(1O)

$
10-6 Supersedes Section 10.1 - 10.20 of Revision F

MIL-HDBK-217F
NOTICE 2
11.1 INDUCTIVE DEVICES, TRANSFORMERS
sTYLE DESCRIPTION
SPECIFICATION Audio, Power and High Power Pulse
TF
MIL-T-27 Low Power Pulse
TP
MIL-T-21038 Intermediate Frequewy (IF), RF and Discriminator
MIL-T-55631
)LP= ~~xTxQz~ Fai~Ures/l 06 Hours
Base Failure Rate - ~ Quality Factor - ~ +

1
r lcQ
Lb (F/106 hrs.)
Transformer QualitY
b
.0054 1
MIL-SPEc
Flyback (C 20 VOM)
3
.014 Lower I 1
Audio (15 -2oK Hz) i
.022
Low Power Pulse
(Peak Pwr. c 300W,
Environment Fader - ZE
Avg. Pwr. < 5W)
fiE
.049 Environment
High Power, High . 1.0
Power Pulse (Peak GB
Power z 300W, Avg. 6.0
GF
Pwr.25W)
12
RF (1OK-
. IOM Hz) I
.13
,
GM
5.0
Ns
Tempemtum Factor -XT 16
Nu ,
. I I
6.0
Alc
8.0
30 I !’:
1 .Z
I ‘IF
7.0
40 I %c
1.4
50 9.0
1.6
60 ‘UF
1.8
70
1.9
I
1
Am,
“ “t-Ivv
24
80 *A
2.2 .3U
I
90
2,4
100 13
2.6
110 I
2.8
120 -. ML 34
3.1
130 I .-
140 . 3.3 cL 610
150 3.5
160 3.8
I Ad .
4. I
170
180
4.3
4.6 ,
190
-.11 I_ 1
XT = exp ~W-29Et
8.617x
[
I0 ( )){
THS = Hot Spot Temperature (“C), See Section

11.3. This prediction model assumes that the
insulation rated temperature E not exceeded for I
more than 50,0of the time.
J 11-1
MIL-HDBK-217F
NOTICE 2
11.1 INDUCTIVE DEVICES, TRANSFORMERS
Transformer Characterlstlc
Determlnatlon Note
MIL-T-27 Example Designation
TF 4 R 01 GA 576
I I I I I
AIL-T-27 Grade Irlsul&dkm Famtiy ~~
chS Syrflbd
Family Type Codes Are:
Power Transformer and Filter: 01 through 09,

37 though 41
Audio Transformer: 10 through 21, 50 through 53
Pulse Transformer: 22 through 36,54
MI L-T-21038 Example Designation
TP 4 Q xl 1OoBcool
I I I
MIL-T-21we Gr* h.suticxl
Cbs
MlL-T-5563I. The Transformers are Designated

with the folbwing Types, Grades and Classes.
Type 1 Intermediate Frequency Transformer

Type II Radio Frequency Transformer
Type Ill Discriminator Transformer
Grade 1 . For Use When Immersionand

Moisture Resistance Tests are
Required
Grade 2 For Use When Moisture Resistance
Test is Required
Grade 3 For Use in Sealed Assemblies
Class O 85°C Maximum Operating

Temperature
Class A I05°C Maximum Operating
Temperature
Class B 125°C Maximum Operating
Temperature
Class C > 125°C Maximum Operating
Temperature
The class denotes the maximum operating

temperature (temperature rise plus maximum
ambient temperature)
- z..__. .
_ =._—___ .
-—=---.+--——_-____>_ ._
.
e-— ~.
_—_. __ . —————————..—
_
MIL-HDBK-217F
NOTICE 2
11.2 INDUCTIVE DEVICES, COILS
SPECIFICATION STYLE DESCRIPTION

MIL-C-15305 Fixed and Variable, RF
MIL-C-83446 Fixed and Variable, RF, Chip
MIL-C-3901O Molded, RF, Est. Rel.
Base Failure Rate - ~ Quality Factor - ~ —

+
Inductor Type ~ F/lo6 Ms. Quality IIQ
,
s .03
Fixed Inductor or Choke .000030
R .10
Variable Inductor .000050
P .30
M 1.0
MIL-SPEC 1.0
TH@) XT
Lower 3.0
20 .93
30 1.1
40 1.2
Environment Factor - XE
50 1.4
Environment ~E
60 1,6
70 1.8 GB 1.0
80 1.9 GF 6.0
90 2.2 GM 12
100 2.4
Ns 5.0
110 2.6
Nu 16
120 2.8
130 3.1 6.0

*IC
140 3.3 8.0
‘IF
150 3.5
7.0
*UC
160 3.8
*UF 9.0
170 4.1
180 4.3 *RW 24
190 4.6 sF .50

MF 13
-.11 1 1
XT = e)(p
(8.617x 10
-5
(
TH~ + 273 -=
))
ML
CL
34
610
‘HS = Hot Spot Temperature (“C),
See Section 11.3
L1
MIL-HDBK-217F
NOTICE 2
11.3 INDUCTIVE DEVICES, DETERMINATION OF HOT SPOT TEMPERATURE
l-lot Spot temperature can be estimated as follows:
THS=TA+ 1.1 (Am
where:
-$+s = Hot Spot Temperature (“C)
TA = Inductive Device Ambient Operating Temperature (“C)
AT = Average Temperature Rise Above Ambient (“C)
AT can either be determined by the appropriate “Te~erature Rise” Test Method paragraph in the device base
specification (e.g., paragraph 4.8.12 for MI L-T-27E), or by approximation using one of the procedures
described below. For space environments a dedicated thermal anatysis should be performed.
AT&p mximation (Non-spaoe Environments)

Information
.— - Known AT Armoximation I
1. MIL-C-3901 O Slash Sheet Number

MIL-C-39010/l C-3C, 5C, 7C, 9A, lOA, 13, 14 AT= 15°C
MIL-C-39010/4C, 6C, 8A, 11, 12 AT= 35°C
2. Power Loss AT= 125 WL/A

Case Radiating Surface Area
3. Power Loss AT= 11.5 wL/(wt.)”6766 I
Transformer Weight
4. Input Power AT= 2.1 W~(Wta)06766
Transformer Weight
(Assumes 800/0 Efficiency)
W’ = Power Loss (W)
A= Radiating Surface Area of Case (in2). See below for MIL-T-27 Case Areas
Wt. = Transformer Weight (lbS.)
w, = Input Power (W)
NOTE: Methods are listed in prefemd order (i.e., most to least accurate). MIL~-3901 O are micro-
miniature devices with surface areas less than 1 in2. Equations 2-4 are applicable to devices with
surface areas from 3 in2 to 150 in2. Do not include the mounting surface when determining radiating
swface area.
MIL-T-27 Case Radiati nq Areas (Excludes Mounting Surface)
Case I Area (in2) Case Area (in2) Case Area @2)
AF 4 GB 33 LB 82
AG 7 GA 43 LA 98
Al-1 11 H5 42 MB 98
AJ 18 HA 53 MA 115
EB 21 JB 58 NB 117
EA 23 JA 71 NA 139
FB 25 KB 72 OA 146
FA 31 KA 84
17-4 Supersedes pages 11-4 and 11-5 of Rev[sion F
#,. –
MIL-HDBK-217F
NOTICE 2
12.1 ROTATING DEVICES, MOTORS
The following failure-rate model applies to motors with power ratings below one horsepower. This model is applicable to
pcdyphase, capacitor start and run and shaded pole motors. h’s application may be extended to other types of fractional
horsepower motors utilizing rolling element grease packed bearings. The model is dictated by two failure modes, bearing
failures and winding failures. Application of the model to D.C. brush motors assumes that brushes are inspected and
replaced and are not a failure mode. Typical applications include fans and blowers as well as various other motor
applications. The mode! is based on References 4 and 37, which contain a more comprehensive treatment of motor life
prediction methods. The references should be reviewed when bearing loads exceed 10 percent of rated load, speeds
‘ exceed 24,000rpm or motor loads include motor speed slip of greater than 25 percent.
The instantaneous failure rates, or hazard rates, experienced by motors are not constant but increase with time. The
failure rate model in this section is an average failure rate for the motor op-ting over time wrid T. This time period is
either the system design life cycle (LC) or’ the time period the motor must last between complete refurbishment (or
replacement). The model assumes that motors are replaced upon faifure and that an effective constan! failure rate is
achieved after a given time due to the fact that the effective ~ime zero- of replaced motors becomes random after a
significant portion of the population is replaced. The average faikuO rate, , can be treated as a constant failure rate and
$
added to other part failure rates from this Handbook.
x, Lz
l.p= — +
—
BaW
x 106 Failures/l 08 I-iours
A(xB
[ 1
Bearing & Winding Characteristic Life - c%Rand aw.-
‘A (“c) ~ (Hr.) ~ (Hr.) TA (=) aB (Hr.) ~ (Hr.)
o 3600 6.49+06 70 22000 1.1Q+05

13000 3.2e+06 80 14000 7.09+04
E 39000 1.W+06 90 9100 4*6e+04
30 78000 8.9e+05 100 6100 3.le+04
40 5.oe+05 110 4200 2.19+04
50 55000 2.9e+05 120 2900 1.5e+04
60 35000 1.8e+05 130 2100 1.09+04
140 1500 7.5e+03
1
2.534- TA2~:73 + -1
1
aB - 10 ( )
4500
20-~ +300
[ 10 ( )
2357
1.83]
,0 [ TA + 273 -
%/”
aB = Weibull Characteristic Life for the Motor Bearing
Weibull Characteristic Life for the Motor Windings

w“
TA = Ambient Temperature (“C)
NOTE: See page 12-3 for method to cakulate aB and ~ when temperature is not @nstant.

.—__ __ ———
—______ __ —-.____
— — —..-_ _
MIL-HDBK-217F
NOTICE 2
and L c Determination
L —--—
..
A and B Determinatbn 1
A B Lcw&
Motor Type 1 k, or Q
aB aw
1.9 1.1
Electrical (General)
.48 .29 0-.10 .13
Sensor
Servo 2.4 1.7 .15
.11 -.20
11 5.4
Stepper
.21 -.30 .23
.31 -.40 .31

Example Calculathn
.41 -.50 .41

A general purpose elecltial motor is operati~ at
50”C in a system with a 10 year desgn life (876W .51
hours) expedancy, .51 -.60
55000 Hrs. .61 -.70 .61
,71-.80 .68
2,9e + 5 Hrs.
.81 -.90 .76

87600 ~fS. =
1 .e
55000 I+rs. 1.0
>1.0
87600 I-trs.
.3
2.9e + 5 Hrs. = LC is the system design Me cycle (in hours), or
the motor preventive rnaintename intewal, if
motom will be periodidly replaced or
L& .
1.0 1.6
for
refutished. Determine kl and ~ separately

aB
( ) LC am —LC ratios.
based on the respedive —
UB aw
.23 f.rg= .3
aw
( )
1.9
1.1
1
.23 6
%= [*+ (1. V(2.9e + 5) x‘0
10.3 Failures/l 06 Hours

‘P =
~9.9 Supersedes page 12-2 of Revision F

ILL
I I
MIL-1-iDBK-217F
NOTICE 2
for Cycled Temperature

‘Calculation
The following equation can be used to calculate a weighted characteristic life for both bearings and windings
(e.g., for bearings substitute aB for all a’s in equation).
h1+h2+h3+------hm
a=
hl hz h3 h~
—+ —+ — +-------—
a
al a2 a3 m
where:
a either ~ or aw
h, Time at le~erature T1
h* Time to Cycle From Temperature T, to T3
h3 Time at Temperature T3
hm mme at Temperature Tm
al Bearing (or Winding) Liie at T1
Bearing (or Whaling) Life at T2

‘2
T, + T3 T3 + T,
T~=2$T4=2
T3
T2
TI /
. h4
-f
II
hl hz h3
1 I
Hours (h)
Thermal Cycle
Supersedes page 12-3 of Notice 1 12-3

MIL-HDBK-217F
NOTICE 2
12.2 ROTATING DEVICES, SYNCHROS AND RESOLVERS —
DESCRIPTION
Rotating Synchros and Resolvers
kp = &S~NXE Failures/l 06 Hours
NOT E: Synchros and resolvers are predomiwtely used in service requiting only slow and infrequent motion.
Mechan~al wearoti problems are infrequeti so that the electrical failure mode dominates, and no
mechankal mode failure rate is required in the model above.
Number of Brushes Factor - ~

Number of Brushes %N
~
=
52 1.4
.0083 85 .032
30
.0088 90 .041
35 3 2.5
40 .0095 95 .052
45 .010 100 .069 3.2
.094 4
50 .011 105
.013 110 .13
55
.014 115 .19
60
.016 120 .29
65 Environment Factor - ZE
.019 125 .45 r
70
75 .022 130 .74 fiE
Environment
.027 ~ ,1.3 A
80 I
GB 1.0
GF 2.0
. .oo535expf-)8”’
% 12
%
I
TF . Frame Ternpwatum (z) N~ 7.0
N“ 18
If Frame Temperature is Unknown Assume
TF=40“C + Atiieti Tempenture 4.0
AC
6.0
‘IF
16
*UC
Size Factor - x~ 25
‘UF
26
w 1 ‘RW
DEVICE Size 8 or Size 10-16 Size 18 or
SF
.50
smaller Larger
TYPE
MF 14
2 1.5 1
Synchro 36
ML
3 2.25 1.5 680
Resolver CL I
Supersedes page 12-4 of Notice 1

12-4
//”- .>. \NaaA\

MIL-HDBK-217F
NOTICE 2
12.3 ROTATING DEVICES, ELAPSED TIME METERS
DESCRIPTION
Elapsed Time Meters
kp =&p~Fai lures/106 Hours
Environment Factor - xc
Base Failure Rate - ~ L
Type I Lb Environment ~E
20 GB 1.0
A.C.
GF 2.0
Invefier Driven 30
% 12
Commutator D.C. 80
Ns 7.0
Nu 18
*IC 5.0
Temperature Stress Factor - XT
‘IF 8.0
Operating T (°C)/Rated T (~) [ ‘ XT
16
‘Uc
o to .5 .5 25
‘UF
.6 ‘RW 26
.6
SF .50
.8 .8
MF 14
1.0 1.0
ML 38
CL N/A

MIL-HDBK-217F
NOTICE 2
13.1 RELAYS, MECHANICAL
DESCRIPTION
Mechanical Relay
SPECIFICATION MIL-R-83516
M\L-R-5757
MIL-R-83520
MIL-R-6106
ML-R-83536
MIL-R-13718
MIL-R-83725
MIL-R-19646
MIL-R-19523 MIL-R-83726 (Except Class C, Solti State Type)
MIL-R-390~6 a.
Failures/l Ob Hours
)bP= &Lncxc&xQn E
Load Stress Factor - XL

Base Failure Rate - ~ ~- -I T.-A
‘R*06
1 1
.-
Rat# Tempentt I~a
T. (%)
n’
25
“
1
I 0s%’
.
‘:&9
I
125”$
.005=
.0066
:6 { l=-- .U3
.10
1
1.02
1.28
1
2,72
I
I
.0067 .20 1.06
30 .0073 1.76 9.49
.0075 .30 1.15
35 .0081 2.72 54.6
.0064 .40 1.28
40 .0089 4.77
45 .0094 .50 1.48
.010 .0098 1.76 9.49
50 .60
.012 .011 2.15 21.4
55 .70
.013 .012 2.72
60 .80
.014 .013 3.55
65 .014 .90
.016 ~ 4.77
70 .015
75 .017 S2
.019 .017 S2 3.
80 1. ~.exp ~
.021 .018 y-- -j ()
65 .019 ()
90 iii
95 .022
100 .024
105 .026
110 .027
115 For single dev”-s wtkh switchtwo different load typs,
.029
120 .031 evaluate q-for each possible str-s bad tyPS
!
125
combinat’mnand use the worse casO (largest XL).
‘“ %
-.0059 exp
(
8.617
-.19
X 10-5 [
~-zm1)1 1 )
CydiMI Fader- ~yc ?

c@e Rate %Yc
1
-.17 —.—1 (MIL-SPEC)
2“ %
-.0059 exp
( 8.617 X 10-5 [ T + 273 298
q
,
L (@cbS per Hour)
21.0 10
0.1
~A ~bant Tempmture VC) <1.0
“ ,I /
r
C ycle Rate ‘CYC
Contad Fom Factor - nc (C@es per Hour)
,
(Applies to Active Concluding Conta~s) >1OOO 100
* ‘c
mnta ct Form .
Cycles per Hour
1 1.00
s?S1 cn
I .au
●
10-1000 A 10
DPST 1.0
1.75 <10 I
sPOT 2.00
3PST 2.50 NOTE- Values of nCYC for cycling rates beyond the
4PST n
3,00 basic design hmttations of the relay are not valld Deslg
DPDT 425 specdicatlons should be consulted prior to evaluation of
3PDT 1 ‘
-H
550 I
4PDT ‘CYC
800
6PDT
b
13-1

nnll -U.l1 WI ITHSISIUI . rlxuu. uulllwalLlwIl 10 IISZUIOUWUJ, w-l! W1-.
-y -----------. ---
MIL-HDBK-217F
NOTICE 2
—
13.1 RELAYS, MECHANICAL
Application and Constf’uction Factor - fiF

Quality Factor - n, 1
Contact Application Construction
7t Q Type
Quality Rating Type
~ D~ Circuit Arm ature (Long)
.10 Dry Reed
R lrrent
.30 3Wmv Mercury Wetted
P Magnetic Latching
Idma)
.45 Balanc6d Armature
x Solenoid
u .60 w General Armature (LoW)
Pum09e Balanced Armature
M 1.0 Solenoid
b 5
I
1.5 Sensitive Armature (Long and
L (0-lCN)mw) short)
Mercury Wetted 2
MIL-SPEC, Non-Est. Rel. 1.5
Magnetic Latching 6
2.9 Meter Movement 100
@mmercial 10
Balancd Armature
Armature (ShOti) 10
Polarized
100
Environment Factor - xcL T
1
\ fiE
Environment 25
I
GB 1.0
GF 2.0
M
15
% Ele ctronic
Ilrne Dew,
Ns 8.0 ~
*-Therm al 1
Nu 27 .atch ing, w Reed I 10

5
Magnetic Mik w yWetted
7.0 Balan@ armature 5
AC 20
5-20 Amp High Voltage Vacuum (Glass)
9.0 Vacuum (Ceramk) 5
‘IF 3
~ Armature (Longand
11 short)
%c Power
12 Mercury Wetted
‘UF Magnetic Latching :
46 Mechan’~1 Latching 3
‘RW Bala- Armature 2
.50 Solenoid 2
SF 7
25-600 Contractors Armature (Short)
MF 25 (High Mechanlcd Latching 12
I Baian@d Armature 10
66 Current)
ML ‘ Solenoid 5
c, N/A

13-2
—————
fvllL-HDBK-21 7F
NOTICE 2
13.2 RELAYS, SOLiD STATE AND TIME DELAY
SPECIFICATION DESCRIPTION
MIL-R-28750 Relay, Solid State
MIL-R-83726 Relay, Time Delay, Hybrid and Solid State
The most accurate method for predicting the failure rate of solid state (and solid state time delay) relays is to sum
the failure rates for the individual components which make up the relay. The indvidual component failure rates
can either be calculated from the models provided in the main body of this Handbook (Parts Stress Method) or
from the Pafls Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has
about the components being used. If insufficient information is available, the following default model can be
used:
~ = ~z@E Failures/106 liours
Base Failure Rate - ~ Environment Factor - XE

—
Relay Type 1 Lb Environment fiE
1
GB 1.0
Solid State .029
GF 3.0
Solid State Time Delay .029
GM 12
Hybrid .029 Ns 6.0
N“ 17
12
Alc
Quality Factor - z~ 19
— ‘IF
I Quality I 7C Q
1
%c 21
I
‘UF 32
MIL-SPEC 1.0
‘RW 23
Commemial 1.9
SF .40
MF 12
ML 33
cL 590
Supwsedw page 13-3 of RwIsm F 13-3

MIL-HDBK-217F
NOTICE 2
14.~ SWITCHES
Load Stress Factor - XL

Base Failure Rate - ~ Load Type
1 Stress Lamp
Spec. Resistive Inductive
s 1.06
~ (F/106 tirs.) 1.00 1.02
Description MIL-S- 0.05 1.28
1.02 1.06
3.4 0.1 2.72
N/A 1,06 1.28
Centrifugal .00012 0.2 9,49
83504 1.15 1.76
Dual-In-line Package 4.3 0.3 54.6
8805 1.28 2,72
Limit 2.3 0.4
Liquid Level 1.7
I 0.5 1.48 4.77
N/A 9.49
II
Microwave 0.6 1.76
2.15 21.4
(waveguide) 2,8 0.7
8932 0.8 2.72
pressure
9395 0.9 3.55
1211 1.0 4.77
.10
I
8805 I b
pushbutton
I
22885 Operating Load Current
24317 s=
.0010 Rated Resistive Load Current
55433
Iced .023
3950
I
locker exp (S/.8)2 for Resistive Load
22885 XL =
3786 .11
iotafy fiL = exp (s94)2 for Inductive Load
13623
15291 fiL = exp (S/.2)2 for tirnp Load
15743
22604
22710 NOTE: When the switch is rated by indutiive load,
45885 then use resistive nL.
82359
8805 .49
Sensitive Conta@ Configuration Factor* - Zc
13484 # of Contactst
22614 NC xc
12285 .031 Contact Form
Thermal 1.0
24286 SPST 1
22710 .18 1.3
Thurnbwhed DPST 2
3950 .10 1.3
Toggle sPOT 2
5594
I
3 1.4
8805 3PST
4 1.6
8834 4PST
4 1.6
9419 DPDT
13735 6 1.8
. 3PDT
81551 8 2.0
4PDT
4
I 83731
6PDT 12 2.3
I
●
Applies to toggle and pushbutton switches only,
all others use fic = ~. 4
L
74-1
Supersedes page 14-1 through 14-4 of Revision F

MIL-HDBK-217F
NOTICE 2
14.1 SWITCHES
Quality Factor - Kn Environment Factor - n~

.
Environment ~E
I Quality I
~Q
I
I
GB 1.0
I MIL-SPEC 1
I GF 3.0
Lower 2 J
GM 18
NS 8.0
Nu 29
10
*C
18
‘IF
13
‘Uc
22
‘UF
46
‘RW
SF .50
MF 25
ML 67
CL 1200
14-2 Supersedes page 14-1 through 14-4 of Revision F

MIL-HDBK-217F
NOTICE 2
14.2 SWITCHES, CIRCUIT BREAKERS
SPECIFICATION DESCRIPTION
MIL-C-13516 Circuit Breakers, Manual and Automatic
MIL-C-55629 Circuit Breakers, Magnetic, Unsealed, Trip-Free
MIL-C-83383 Circuit Breakers, Remote Control, Thermal, Trip-Free
MIL-C-39019 Circuit Breakers, Magnetic, Low Power, Sealed, Trip-Free Service
W-C-375 Circuit Breakers, Molded Case, Branch Circuit and Sewice
kp = &cXuZQnE Failures/l 06 Hours
Base Failure Rate - k oualitv Factor - ~n

Description %3 Quality 7C Q
Magnetic .34 MIL-SPEC 1.0
Thermal .34 Lower 8.4
Thermal-Magnetic .34
Environment Factor - xc
IE nvironment
Configuration Factor - m
GB 1.0
Configuration
GF 2.0
SPST 1.0
GM 15
DPST 2.0 Ns 8.0
3PST 3.0 Nu 27
4PST 4.0 AC 7.0
‘IF 9.0
%c 11
Use Factor - z 12
‘UF
Use ‘RW 46
,
SF .50
Not Used as a Power 1.0
On/Off Switch ‘ MF 25
Aiso Used as a Power 2.5 ML 66

On/Off Switch CL NtA

MIL-HDBK-217F
NOTICE 2
15.1 CONNECTORS, GENERAL
LP = kbnTnKnQnEFailures/lo6 ‘ours
APPLICATION NOTE: The failure rate model is for a mated pair of conneCtom. It is sometimes desirable to
assign half of the overall mated pair connedor (i.e., single corm-or) failure rate to the Ime replaceable unit and
An example of when this would be beneficial is for input to maintainability
half to the chassis (or backplane).
prediction to allow a failure rate weighted repair time to be estimated for both the LRU and chassis. This
accounti~ procedure could be signif”tint if repair times for the two halves of the connector are substantially
different. For a single connector divide ~ by tWO.
I
~ification -$) (’v

Description MIL-C- 20 .91
115 26482 .0010 30 1.1
;ircular/Cylititil
i500 27599 1.3
40
1840 29600 1.5
50
)999 83723
60 1.8
1511
70 2.0
21097 .040 80 2.3
ard Edge (PCB)*
55302 2.7
90
24055 .15 100 3.0
exagonal
24056 110 3.4
.021 120 3.7

ack and Panel 24308
28731 130 4.1
28748 140 4.6
83515
150 5.0
Rectangular 21617 .046 160 5.5

24308 6.0
170
28748
180 6.5
28804
81659 190 7.0
83513 7.5
8352? 200
83733 210 8.1
85028 220 8.6
230 9.2
3F Coaxial S607 15370 .00041
36X3 25516 240 9.8
S650 26637 250 I 10.
3655 39012
55235
.— 1
)1
r -.14 1
Telephone
83517
55074 .0075
XT sexp
18.617 ‘-
X 10-5 (
To + 273
298
.0070 To = Connector Ambient + AT

Power 22992
Trlaxial 49142 .0036 AT = Connector Insert Temperature Rise

(see Table)
‘ Pr~nted Circuit Board Connector

15-1
Supersedes page 15-1 through 15-5 of Revision F
—a.. . . . . . .. ____ .—— —a— ___ _______ . . —.—
.—...——..
MIL-HDBK-217F
NOTICE 2
Default Insert Temperature Rise Mating/Unmating Factor - nK

lAT
— ‘C) —, Determination
— Mating/Unmating Cycles*
Amperes L Contact Gauge (per 1000 hours) ~K
~er Contact 30 22 20 16 12
2 10 4 2 1 0 o to .05 1.0
3 22 8 5 2 1
4 37 13 8 4 1 > .05to .5 1.5
5 56 19 13 5 2
>.5t05 2.0
6 79 27 18 8 3
7 36 23 10 4 >5t050 3.0
8 46 30 13 5
9 57 37 16 6 > 50
10 70 45 19 7
15 96 41 15 ●One cycle includes both connect and
20 70 26 disconnect.
25 106 39
30 54
35 72 Quality Factor - XQ
40 92
I Quality I I
AT = 3.256(i)’ “85 32 Gauge Contacts MIL-SPEC 1
AT = 2.856(i)’ “85 30 Gauge Contacts Lower 2
AT = 2.286(i)’ ●85 28 Gauge Contacts
AT = 1.345(i)l “85 24 Gauge Contacts Environment Factor - XE
AT = 0.989(i)’ ●85 22 Gauge Contacts Environment ~E
AT = 0.640(i)’ “85 20 Gauge Contacts
GB 1.0
AT = 0.429(i)’ ’85 18 Gauge Contacts
GF 1.0
AT = 0.274(i)’ ’85 16 Gauge Contacts
AT = 0.100 (i)’ “85 12 Gauge Contacts GM 8.0
Ns 5.0
AT = Insert Temperature Rise
i = Amperes per Contact Nu 13
4
Alc 3.0
RF Coaxial Connectors AT = 5° C 5.0
‘IF
8.0
RF Coaxial Connectors ‘Uc
(High Power Applications) AT= 50°C 12
‘UF
‘RW 19
SF .50
MF 10
ML 27
c, 490
15-2 Supersedes page 15-2 through 15-5 of Revision F

MIL-HDBK-217F
NOTICE 2
15.2 CONNECTORS, SOCKETS
Lp = ++CP7CQ7CEFailures/l 06 Hours
Base Failure Rate - ~ Active Pins Factor - np

Spec. Number of Number of “
Active A ct ive
Description httlL-S Lb 7tp
Contacts Contacts
Dual-In-Line Package 83734 .00064 1 1.0 55 6.9

2 1.5 60 7.4
Single-In-Line Package 83734 .00064 3 1.7 65 7.9
4 70 8.4
Chip Camier 38533 .00064
5 H 75 8.9
Pin Grid Array NIA .00064 6 2.1 80 9.4
7 2.3 85 9.9
Relay 12883 .037 8 2.4 90 10
9 2.5 95 11
Transistor 12883 .0051 10 2.6 100 12
11 2.7 105 12
Electron Tube, CRT 12883 .011 12 2.8 110 13
13 2.9 115 13
14 3.0 120 14
Quality Factor - ~
15 3.1 125 14
~Q
16 3.2 130 15
Quality 17 3.3 13.5 16
18 3.4 140 16
MIL-SPEC. .3 3.5 17
19
Lower 1.0 20 3.6 ;$ 18
25 4.1 155 18
30 4.5 160 19
Environment Factor - ~E 35 5.0 165 20
40 5.5 170 20
Environment fiE 45 5.9 175 21
50 6.4 180 22
GB 1.0
GF 3.0
% 14
Ns 6.0
Nu 18 N = Number of Active Pins
AC 8.0 An active contact is the conductive element

12 which mates with another element for the
‘IF
purpose of transferring electrical energy.
11
*UC
*UF 13
25
*RW
SF .50
MF 14
ML 36
c, 650

I I I l.- ----
I 1 I
MIL-HDBK-217F
NOTICE 2
16.1 INTERCONNECTION ASSEMBLIES WITH PLATED THROUGH HOLES
Ap =kb
[
Nptc+N2(~c+ 13)
1 7t Q nEF a illJre @ H o urs
APPLICATION NOTE: This model applies to board configurations with leaded devices mounted into the
plated through holes and assumes failures are predominately defect related. For beads using surface mount
technology, use Section ~6.2” For a mix of leaded devices mounted into plated through holes and surface
mount devices, use this model for the leaded devices and use Section 16.2 for the surface mount contribution.
A discrete wiring assembly with electroless deposit plated through holes is basidly a pattern of insulated wires
The primary cause of failure for both printed wiring and discrete
laid down on an adhesive coated substrate.
wiring assemblies is associated with plated through-hole (PTH) problems (e.g., barrel crackng).
Quality Factor - ~
Quality ltQ
kb
Technology
.000017 MIL-SPEC or Comparable Institutefor 1

Printed Wiring Assemb!yFtinted
Circuit Boards with PTHs Interconnecting, and Packaging
Electronic Circuits (lPC) Standads
.00011 (IPC Level 3)
Discrete Wiring with Electroless
A
Deposited PTH (< 2 Levels of Circuit@
Lower 2
Nu~r of PIWs Factor - N1 and N2
Factor I Quantity
Envimnmti Factor -xc

N, Automated Techniques: Quantity of b
1
Wave Infrared (IR) or Vapor Phase Environment ~E

Soldered Functional PTlis 1.0
I GB
N2 Quantity of Hand Soldered PTHs I
I GF I 2.0
7.0
GM
Complex”~ Factor - ~ L
xc &s 5.0
Number of Circuit Planes, P
1.0 Nu 13
S2
3 1.3 I
5.0
4 1.6 %c
5
6
1.8
2.0 I ‘IF I 8.0
2.2 16
7 %c
8 2.4 28
9 2.6 ‘UF
2.8 19
10 ‘
2.9
%w
11 .50
12 3.1 SF
13 3.3 10
3.4 MF
14
15 3.6 ML 27
16 3.7
3.9 cL 500
17 .
18 4.0
Discrete Wwng w/PTH 1
xc = .65P 63
Ifj-1
-. --1- I , .“.. ~.
. Jr-- ----------- .
MIL-I+DBK-217F
NOTICE 2
16.2 INTERCONNECTION ASSEMBLIES, SURFACE MOUNT TECHNOLOGY
APPLICATION NOTE: The SMT Model was ctevelopecf to assess the life integfiiy of leadless and leaded
devices. It provides a relative measure of circuit card wearout due to thermal cycling fatgue failure of the
“weakest link- SMT device. An analysis shouti be periorrned on all circuit board SMT components. The
component with the largest failure rate value (weakest link) is assessed as the overall board failure rate
due to SMT. The model assumes the board is completely renewed upon failure of the weakest link and
the results do not consider solder or lead marwfacturi~ defects. This model is based on the techniques
developed in Reference 37.
ASMT = Average failure rate over the

expected equipment life cycle
due to surface mount device where:
wearout. This failure rate CR = Temperature cycling rate in
contr’butbn to the system is for cycles per calendar hour. Base
the Surface Mount Device on on a thermal analysis of the circuit
each board exhibiting the board. Use table default values if
highest absolute value of the other estimates do not exist.
strain range:
Nf = Average number of thermal
I ( % AT -ucc(dT+TRIsE)) lx 10-6 cycies to failure
)LSMT = ~
ECF
Nf= ,
(1
3.5 & (as AT- Cfcc(AT+TRIsE)) Ix 10 +)-’qn,c)
ECF = Effective cumulative number of
where:
failures over the Weibull
d= Distance from center of device to
ctwacte~ic life. the furthest solder joint in miis
(thousandths of an inch)
_
k..””...- ~llmldat~~
Ffi*iVGI -..._._”,.” ral~
u w------ ~r~~- FCF
---
Lc h= Solder joint height in miis for

ECF
-MT Ieadiess devices. Default to h = 8
for ali leaded configurations.
0-.1 .13
.11 -.20 .15 w= Circuit board substrate thermai
.21 -.30 .23 coefficient of expansion (TCE)
.31 -.40 .31
.41 -.50 .41 AT = Use environment temperature
.51 -.60 .51 extreme difference
,61-.70 .61
.71 -.80 .68 w%= Package material thermal
.81 -.90 .76 coefficientof expansion (TCE)
> .9 1.0
TRISE = Temperature rise due to power
LC = Design iife cycle of the dissipation (Pal)
equipment in which the circuit
board is operating Pd = eJcp
USMT = The Weibull characteristic life. 8JC = Thermal resistance ‘/Watt

USMT is a function of device and P= Power Dissipation (Watts)
substrate material, the manu-
facturing methods, and the ~Lc = Lead configuration factor
application environment used.
16-2 New Page

—
MIL-HDBK-217F
NOTIGE 2

as - Default TCE Substrate Values
CR - Cycling Rate Defau~ Values as
Number Of Substrate Material
Equipme~ TYPe
Cycles/Hour 18
FR4 Laminate
1.0 20
l~omotive FR-4 Multilayer 60ard
.08 11
:onsumer (television, radio,
FR-4 Multilayer Board w/Copper
recorder)
.17 [ Clad Invar I
computer 7
.0042 ?ramicMuttilayer Bead
Telecorn~~”~t’~ns 5
.25 ~pper Clad Invar
Commercial Alrcrati I K
d
.021 Copper Clad Mol@@mm
INustrial 1
.03
MilfiarY Gwti Appl”=tbm Cafbon-Fibr/EpOW Corw@e
.12 3
Miliia~ Aircraft (Caf90) Kevlar Fiber
.5 1
Miliiafy Ahcnti (FigMer) @artz Fiber
5
Glass Fiber
XLC - Lead Configuration Factor 15
Epoxy/Glass Laminate
Lead Configuratbn %C 13
1 Polyamtie/Glass Laminate
6
LeadlesS Polyam”~/Kevlar Laminate
150 8
J or S Lead
L 5,000 . Po&amtie/Wa~ LamiMte
Gull WIW 7
@oxy/Kevkr Laminate
7
c - TCE Package Values Alumina (Ceramk)
7
@mxy Ararnkf Fiber
, 7 6
Plastic PolyamM Aramti Fitwr
6 9
Ceramic Epoxy-Quafiz
, 20
Fiberglass Tefbn Laminates
AT -Use Envimnmeti Default var 7
Te~erature Difference Porcelainked Copper Clad In
1
7
v AT Fiberglass Ceramk Fibw
●
Environment 1
7
GB A large plastic encapsulated
E)cAMPLE:
21
GF Ieadless chip canier is mounted on a epoxy-
26 glass printed Wiring assetily. The $esign
GM
~ns”~erations are: a square pa*age is 1480
26
hJs roils on a side, solder height is 5 roils, power
61 dissipation is .5 watts, thermal resistance is
Nu
31 20 °C/wati, the design life is 20 years and
%c envkOnmti is military grouti application. The
31 failure rate cfevebped is the impad of SMT for a
AIF ~
57 single circuit board and accounts for all SMT
%c devices on this board. This failure rate is added
57 to the sum of all of the component failure rates
‘UF
31 on the circuti board.
%lw
7
Sc
N/A
M’F
NIA Nf
ML
hJIA (xsMT = c–fi
CL
16-3
New Page
MIL-HDBK-217F
NOTICE 2
d (asAT-ucc(A~+TRlsE)) I “0 -6)-226@Lc) -
~f = 3“5 (. R I
For d: d = ~ (1480) = 740 roils
For h: h s 5 roils
For as: as = 15 (Table - EPOXYGlass)
ForAT: AT_ 21 (Table - GF)
For WC: ~. 7 (Table - PlastiC)
For TRISE: TRISE = eJC p = 20(.5) = 10°C
For XLC: ZLC = 1 (Table - Leadless)
For CR: CR = .03 cycle~our (Table - Milita~ Gmun@
Nf = 3“5 (1 740
(.65)(5)
(W2V - 7W+1O)) 1)x 104 “2”26 (1)
Nf = 18,893 theml cycles to failure
. 18,893 cycles 629,767 hOu~

WMT .03 cyiedbur =
1-c W= 28
* .
aSMT “
ECF = .23 failures (TaMe - Effedive Cumulative Failures)
ECF .23 faiiures .0000004 failure~~ur

~SMT = ~T = 629,767 kNJrS =
XSMT = .4 failures/106 hours

,
New Page
16-4
MIL-HDBK-217F
NOTICE 2
17.1 CONNECTIONS
APPLICATION NOTE: The failure rate model in this section applies to connedions used on all assemblies
Use the Intermnnedion Assembly
except those using plated through holes or surface mount technology.
connections to a circuit board using either plated through hole technology
Model in Sectbn 16 to account for
The failure rate of the strudure which supports Soldefless
the connedions and parts, e.g.,
wrap connections are
or surface mount technology.
non-plated-through hole boards and terminal straps, is considered to be zero.
chara~erized by SOIMwire wrapped under tenshn around a rrmdel
The following post, whereas hati soldeting
is for a single connedion.with wrapping does
not depend on a tension induced connedion.
L = LX= Failures/l 06 Hours
P Ub
Envimnmnt Factor-Xc&
Base Faihm Rate - ~ 1 ~E

Environment I
~ (F/106 hm) I .-
Connedion Type 1 .U
1A I
GB
.0013 2.0
Hand Solder, w/o Wrapping GF
.000070 7.0
Hand Solder, w/Wrapping GM
.. .
.00026 4.0
crimp Ns
.000015
Weld
u
.0000068 4.0
Soldeffess Wrap AC
.00012 6.0
Clip Termin~bn
‘IF
.000069 6.0
Reflow Solder AN
.17 8.0
Spfing Contad
‘UF I
.062 16
Terminal Block
‘RW
.50
SF
MF 9.0
ML 24
420
CL
17-1

MIL-I-IDBK-217F
APPENDIX A: PARTS COUNT RELIABILITY PREDICTION
Parts Count Reliablllty Predlctlon - This prediction method is applicable during bid proposal
and early design phases when insufficient information is available to use the part stress analysis models
shown in the main body of this Handbook. The information needed to apply the method is (1) generic part
types (including complexity for microcircuits) and quantities, (2) part quality levels, and (3) equipment
environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the
following tables, multiplying it by a quality factor, and then summing it with failure rates obtained for other
components in the equipment. The general mathematical expression for equipment failure rate with this
met hod is:
i=n
‘EQUIP = Z ‘i @g@i Equation 1
i=l
for a given equipment environment where:
~EQulP = Total equipment failure rate (Failures/1 06 Hours)
= Generic failure rate for the i ‘h generic part (Failures/1 06 Hours)

‘9
7tQ = Quality factor for the i ‘h generic part
Ni = Quantity of i ‘h generic part
n = Number of different generic part categories in the equipment
Equation 1 applies if the entire equipment is being used in one environment. If the equipment
comprises several units operating In different environments (such as avionics systems with units in
airborne inhab~ed (Al) and uninhabited (AU) environments), tmn Equat~n 1 shou~ ~ aPPlied to the
potiions of the equipment in each environment. These “environment-equipment” failure rates should be
added to determine total equipment failure rate. Environmental symbols are defined in Section 3.
The quaMy factors to be used with each part type are shown with the applicable ~ tables and are not
necessarily the same values that are used in the Part Stress Analysis. M“crocircuits”have an additional
rnuttip~ing factor, ~L, which aOCOuntsfor the matudty of the manUfaCt@ng process. For devices in
productiontwo years or more, no modif’mtbn Is needed. For those in production less than two years,
h
should be multipliedby the appropriate XL faotor (See page A-4).
It shouldbe noted that no generic failure rates are shown for hybrid microcimuits. Each hybrid is a fairly
unique device. Since none of these devices have been standardized, their complexity cannot be
determined from their name or function. Identically or similarfy named hybrids can have a wide range of
complexitythat thwarts categorization for pufposes of this prediction method. If hybrids are anticipated for
a design, their use and construction should be thoroughly investigated on an individual basis with
application of the prediction model in Section 5.
The failure rates shown in this Appendix were calculated by assigning model default values to the
failure rate models of Section 5 through 23. The specific defautt values used for the model parameters are
shown with the kg Tables for microcircuits. Defautt parameters for all other part classes are summarized in
the tables stafling on Page A-12. For parts with characteristics which differ significantly fmm the assumed
defaults, or parts used in large quantities, the underlying models in the main body of this Handbook can
be used.
A-1
MIL-HDBK-217F
NOTICE 2
APPENDIX A: PARTS COUNT

i I 1 i 1
Nmm -wow.
..mtw r-- .-mri
.-04
II
OJ
I
r e -m o
0--’= . .
In
c
9 .
ZS8 * u’ m IA? m
in In Lr
1% *
A-2 Supersedes page A-20f Notice 1
— ———
— .
MIL-HDBK-217F
NOTICE 2
FF)mo -mmo mmmm Cwlo Qo

-.-N 9-..04 .efwm .P.r)
.,. . .,. . . . . . . . . .
QNN to
*W*SJ or-mm -Nsrl
000. .-mm o--m
0000 0000. . . 0000
-Wol
r-mm%
000.
Omoe
.Pmm
. . . .
Inulo)c
*WOO
Oooc
mmea
m@@o
Oooc
mcwea CVWF)N
-NNC Cwmlou)
000< 0000
of-Qe
F-WU
Oooc
. N
m I
I
u N N (
n Lo Lc
Supersedes page A-3 of Notice 1 A-3

MIL-HDBK-217F
c?’
e -i 0
w
Ii I I
9“””
-GJR9416
k
OQ!QCNO
w- . . .
u)
0 m 0
W 64
N
>
A-4
MIL-HDBK-217F
NOTICE 2

1
9
:
:
I
A-5
Supersedes page A-5 of Notice 1
----
MIL-HDBK-217F
NOTICE 1

I I 1 —
>
9
n
?4
I
N ,
z!
o
m
0
o
m , ,
.
r- r
U)
0 c
0 c
in 0<
r) 4 m
t
a
w 4
m.
$ 0
8 o m o
Iii i
o o
i
u
c
cc< *
3=
I
0“
r+
0
m
0
e
0,
r-
OA
0.
“l-Fl- 1 II
2! Ill
z
2!
?!
-
eviSIO!l
persedes
MIL-HDBK-217F
NOTICE 2

1
I 1
I
0
Ln
c
r 8
(
<
,
1
Q
L I
--
-mm
.
A-7
Supersedes page A-7 of Notice 1
1 I I
MIL-HDBK-217F
NOTICE 2
r I
U7 m o
m
1-
g 8
Q m
e’+
m g) m
s
o
!!M
. .
?-
mf
9,
.*-S
. .
-w 6
Ji
w
L
A-8 Supersedes page A-80f Nottce 1

MIL-HDBK-217F
NOTICE 2
. . . . .
f-- q.-
ul-r Q ”ti
o~elyo
-CM-N.
.
i.
i?
(i
G
---- .(-UCU ---- -- N ----- - - N

---- ---
mmmmr)mm U-imbf)inmbnlr)m
----- --- ---- --- ---- ----
Supersedes page A-90f Revision F A-9

MIL-HDBK-217F
NOTICE 2
APPENDIX A: PARTS
r .
0
*
m
.m I
I m“
11
m= r r 1
A-IO Supersedes page A-10 of Notice 1

MIL-HDBK-217F
NOTICE 2
A-II
Supersedes page A-1 1 of Notice 1
.. .. -.
MIL-HDBK-217F
NOTICE 2
APPENDIX A: PARTS COUNT 4
0
.
~
I
I
u
II
0000 00 r-
. . . . . . b.
.--a . .
0 0. 0. 0.0. 0. 0.
0.
---- -- T-
VIA
-- -u t
L
tt{
LLI.L
3“30
0
m
A-12 Supersedes page A-120f Notice I

MIL-HDBK-217F
NOTICE 1
Supersedes page A-1 3 of Rewsion F A-13

MIL-HDBK-217F
NOTICE 2
APPENDIX C: BIBL1OGRAPHY
26. ‘VHSIC Impact on System Reliability,” RADC-TR-88-1 3, AD B122629.
27. ‘Reliability Assessment of Surface Mount Technology,’ RADC-TR-88-72, AD A193759.
28. ‘Reliability Prediction Models for Discrete Semiconductor Devices,” RADC-TR-88-97, AD

A200529.
This study developed new failure rate prediction models for GaAs Power FETS, Transient
Suppressor Diodes, infrared LEDs, Diode Array Displays and Current Regulator Diodes.
29. “Impact of Fiber Optics on System Reliability and Maintainability,” RADC-TR-88-124, AD

A201946.
30. ‘Vl+SIC/Vl-tSIC Like Reliability Prediction Modeling,” RADC-TR-89-1 71, AD AZ 4601.
This study provides the basis for the VHSIC model appearing in MIL-HDBK-217F, Section
5.
31. ‘Reliability Assessment Using Finite Element Techniques,” RADC-TR-89-281, AD MI 6907.
This study addresses surface mounted solder interconnections and microwire board’s plated-
through-hole (PTH) connections. The report gives a detailed account of the factors to be
considered when performing an FEA and the procedure used to transfer the results to a
reliability figure-of-merit.
32. “Reliability Analysis/Assessment of Advanced Technologies,” RADC-TR-90-72, ADA 223647.
This study provides the basis for the revised microcircuit models (except VHSIC and Bubble
IUemories) appearing in MIL-HDBK-217F, Section 5.
33. ‘Improved Reliability Prediction Model for Field-Access Magnetic Bubble Devices,” AFWAL-TR-
81-1052.
34. “Reliability/Design Thermal Applications,” MIL-HDBK-251.
35. “NASA Parts Application Handbook,” MIL-HDBK-978-B (NASA).

This handbook is a five volume series which discusses a full range of electrical, electronic and
electromechanical component parts. It provides extensive detailed technical information for
each component part such as: definitions, construction details, operating characteristics,
derating, failure mechanisms, screening techniques, standard parts, environmental
considerations, and circuit application.
36. “Nonelectronic Parts Reliability Data 1991 ,“ NPRD-91.

This report contains field failure rate data on a variety of electrical, mechanical,
electromechanical and microwave parts and assemblies (1400 different pafi types). It is
available from the Reliability Analysis Center, PO Box 4700, Rome, NY 13440-8200,
Phone: (31 5) 337-0900.
37. “Reliability Assessment of Critical Electronic Components,” RL-TR-92-1 97, AD-A256996.

This study is the basis for new or revised failure rate models in MIL-HDBK-217F, Notice 2,
for the following device categories: resistors, capacitors, transformers, coils, motors, ‘
relays, switches, circuit breakers, connectors, printed circuit boards and surface mount
technology.
Supersedes page C-3 of Revision F c-3

MI L-HDBK-217F
NOTICE 2
APPENDIX C: BIBLIOGRAPHY
38. ‘Handbook of Reliability Prediction Procedures for Mechanical Equipment,” NSWC-94/L07.

This Handbook includes a methodology for nineteen basic mechanical components for
evaluating a design for R&M that considers the material properties, operating environment
and critical failure modes. It is available from the Carderock Division, Naval Surface Warfare
Center, Bethesda, MD 20084-5000, Phone @Ol ) 227-1694.
Custodians: Preparing Activity:

Army - CR Air Force -17
Navy - EC
Air Force -17 Pro)ect No. RELI-0074
Review Activities:
Army - Ml, AV, ER
Navy - St-i, AS, OS
Air Force -11, 13, 15, 19, 99
User Activities:
Army - AT, ME, GL
Navy - CG, MC, YD, TO
Air Force -85
c-4 Supersedes page C-4 of Revision F

STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL

(See /nstrucfion -Reveme Side)
DOCUMENT NUMBER DOCUMENT TfTLE
MIL-HDBK-217F, hJotlce 2 Reliability Pred~ctlon of Electronic Equipment
●. NAME OF SU8MlTflNG ORGANRATION 4. TYPE OF ORGANKATtON (Marx one)
VENDOR
n
USER
n
b. ADDRESS (Street, Ory, State, 21P Code)
❑ MANUFACTURER
OTHER @Padfy)
c1
1. PROBLEM AREAS
a Pamgraph Number and Wording
I
b Recommended Wording
c. Raaaon/l?a@wle
forRacommetition:
6. REMARKS
7a. NAME OF SUBM1’lTER (fJiSf, Ml) - @hOfld

FIrsf, ‘ b. WORK TELEPHONE NUMBER
(hciude Ama Code]. 00 tonal
c. MAILINQ ADDRESS (Streef, Ctfy, Sfafe, ZIP Code) - Optional 8. DATE Of SU6MtSS10f4 (YYMkVDO)
. ---- ---- --- ------
DD 82‘“”M
MAR 1426
1 l-*4a I nuawbw9 , - -. .-— -—.

I —.
INSTRUCTION S In a comlnumg eftorf to m ake our 8tMId arctMtton docum ents better, the 000 Provtdes thts form for u6e in 6ubmlttkyj comments
and sug ostlons tor Irnprrwemrmts All users of m!lltaw stanctardlzallon docum ents are Wted lo provloe surJg estlons Thw hxrn may be
de(ache 2 IOIOW along me t(nos md(catod IaDed along the 100se e dg e (DO NOT STAPLE, I dnd Molded In bIocK 5, be as sp e ctflc as poss!blo
about particular problem areas such as wofdln wtvctI required Inlerprelahon, was 100 ngla, resmctwe, loose, amtxcyous. or was m c omp a oble,
a nd give Propose d wordm changes winch wou5 alleviate the problems Enter m block 6 any remarks nol relarea to a spectfic p ara gra ph of the
do cum ent If block 7 IS II ! ed out, an acknowledgement WIIIbe mahd 10 you MM! 30 days 10 let you know that your C O mm enlS were re c ewe d
and are tremg cons(aerea
NOTE. This form may not be used to request copies of documents, nor to request wawers, dev!atlons. or c~anf!cat~on of specil~catlon
requirements on current contracts C omments 6utrmltte d on thh fofm do not c on611tute or Imply aumotiza!lon to waive anyPortion of the —
referenc e d do cum ent(s) or ?0 a m end (XWW6C’IMI re quire m ents
(Fold along this line)
(Fold a/ong fhk he)
111111
DEPARTMENT OF THE AIR FORCE NO POSTAGE
RIJERSS NECESSARY
*BUSINESS n
Griffiss AFB, NY 13441-5700 IF MAILED
iN THE
UNITED STATES
OFFICIAL BUSINESS
PENAllY FOR PRIVATE USE S300 REPLY MAIL ,~,
FIRST CLASS PERMIT NO. 73236 WASHINGTON D.C.
*
POSTAG E WLL BE P No BY THE DEP ARTMENT OF THk AIR FORCE
Rome Laboratory/ERSR
AlTN: Seymour F. Morris
525 Brooks Rd.
Griffiss AFB, NY 13441-4505
.

Mil HDBK 217f Notice 2

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Mil HDBK 217f Notice 2

Uploaded by

Copyright:

Available Formats

Downloaded from http://www.everyspec.

NOTICE OF CHANGE NOT MEASUREMENT

THIS HANDBOOK IS FOR GUIDANCE ONLY - MIL-HDBK-217F

To all holders of MIL-HDBK-217F

vii 1 vii I 10 Julv 1992

L 1-1 1-1 2 Deoember 1991 1

2-2 2-2 2 Deoember 1991 1

5“3 5-3 10 Ju~ 1992

6-2 6-2 ~ 2 December 1991

11-4 11-4, 11-5 2 December 1991 ,

Custodians: Preparing Activity:

Army - AT, ME, GL

I NOT MEASUREMENT SENSITIVE]

THIS HANDBOOK IS FOR GUIDANCE ONLY -DO NOT

DISTRIBUTION STATEMENT Ad Approved for publlc release; drstrlbu!lcn tinllmtted

RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT

1, This standardization handbook was developed by the Department of Defense

3. Beneficial comments (recommendations, additions, deletions) and any

SECTION 4: RELIABILITY ANALYSIS EVALUATION . ..... .......................... ................. .. 4-1

SECTION 6: DISCRETE SEMICONDUCTORS

INDUCTIVE DEVICES 11-1

ROTATING DEVICES 12-1

QUARTZ CRYSTALS 19-1

Supersedes page w of Revtslon F

SECTION 20: LAMPS 20-1

SECTION 21: ELECTRONIC FILTERS 21-1

SECTION 22: FUSES 22-1

SECTION 23: MISCELLANEOUS PARTS 23-1

,.. . - I r—acinclucl I VLRY I rlmllllulk I IWUIIIICIIIICLIL I

1.0 THIS HANDBOOK IS FOR GUIDANCE ONLY. THIS HANDBOOK SHALL

. A new model to address surface mounted technology solder connections.

3.0 MIL-tiDBK-217F, (base document), (2 December 1991) provided the following

● Monolithic Bipolar Digital and Linear Gate/Logic Array Devices

Supersedes page VII of Revision F, NotIce 1 Vll

~ a IVusw wlBaiaKa Ufi II M1iw ~av~

3. The reformatting of the entire handbook to make it easier to use.

4. A reduction in the number of environmental factors (zE) from 27 to 14.

5. A revised failure rate model for Network Resistors.

Supersedes page 1-1 of Revision F 1-1

RL/ERsR, lat. s. mm=

SUBJECT: Notice 2 to ~-xDBK-217F, “-li~ili~ Redictim of

Prior to s~ the subject aotico to tha DoD Six@O Stock

If YOU have anY uuestim r~ thb reQueat , plea-

cc : OVSD(A&T)~~&E/SE, Mr. M. Zsak

2.0 REFERENCE DOCUMENTS

SPECIFICATION SECTION # TITLE

MIL-C-5 10.1 Capacitors, Fixed, Mica Dielectric, General Specification for

M! L-R-l 1 9.1 Resistor, Fixed, Composition (Insulated), General Specification for

MIL-R-19 9.1 Resistor, Variable, Wirewound (Low Operating Temperature) General

MIL-C-20 10.1 Capacitor, Fwed, Ceramic Dielectric (Temperature Compensating),

MIL-C-25 10.1 Capacitor, Fixed, Paper-Dielectric, Direct Current (Hermetically Sealed

MIL-C-62 10.1 Capacitor, FuedElectrolytic (DC, Aluminum, Dry Ekctrotyte,

MIL-G81 10,1 Capacitor, Variable, Ceramic Dielectric, General Specification for

MIL-R-93 9.1 Resistor, Fixed, Wirewound (Accurate), General Specification for

MIL-R-94 9.14 Resistor, Variable, Composition, General SpecMcation for

MIL-V-95 23.1 Vibrator, Interrupter and Self-Rectifying, General Specification for

W-L-1 11 20.1 Lamp, Incandescent Miniature, Tungsten Filament

W-F-1814 22.1 Fuse, Cartridge, High Interrupting Capacity

MIL-C-3098 9.1 Cqmtal Unit, Quartz, General Specification for

MIL-C-3607 5!1 Connector, Coaxial, Radio Frequency, Series Pulse, General

MIL-C-3643 51 Connector, Coaxial, Radio Frequency, Series HN and Associated

Supersedes page 2-1 of Revision F 2-1