1. For an abrupt p-n junction made of silicon with relative permittivity 11.

4, draw the variations of

the junction capacitance with respect to the applied bias voltage. Also draw 1/Cj^2 with respect
to the applied bias voltage.

Code:
clc;
clear all;
q=1.6*10^(-19);
meps=11.4*8.85*10^(-12); //Relative Permittivity of Silicon = 11.4
mna=2*10^18; //Acceptor Doping Concentration (cm^(-3))
mnd=4*10^18; //Donor Doping Concentration (cm^(-3))
mvo=0.1:0.01:5; //Applied Bias Voltage
mcj=sqrt(q*meps*mna*mnd./(2*mvo*(mna+mnd))); //Junction Capacitance for abrupt pn junction
mcjs=(q*meps*mna*mnd./(2*mvo*(mna+mnd))).^-1;
subplot(2,1,1);
plot (mvo,mcj,’g*’);
xlabel('Voltage');
ylabel('Capacitance(Cj)');
subplot(2,1,2);
plot(mvo,mcjs,’r*’);
xlabel('Voltage');
ylabel('1/Cj^2');

Graph:

Comment:
Variation of Junction Capacitance Vs Applied Bias has been observed with different power of Cj.

2. Repeat problem (1) first part with linearly graded junction. Also draw 1/Cj^3 with respect to the
applied bias voltage.
Code:
clc;
clear all;
q=1.6*10^(-19);
eps=11.4*8.85*10^(-12); //Relative Permittivity of Silicon = 11.4
sl=2;
vo=0.1:0.01:5; //Applied Bias Voltage
cj=(q*eps^2*sl./(12*vo)).^(1/3); //Junction Capacitance for linear pn junction
cjcubinv=(q*eps^2*sl./(12*vo)).^-1;
subplot(2,1,1);
plot (vo,cj,'bo');
xlabel('Voltage');
Ylabel('Capacitance(Cj)');
grid on;
subplot(2,1,2);
plot(vo,cjcubinv,'bo');
xlabel('Voltage');
Ylabel('1/Cj^3');
grid on;

Graph:
Comment:
Variation of Junction Capacitance Vs Applied Bias has been observed with different power of Cj.

3. For a p+n junction silicon device with unity constant factor in the doping profile, draw the
variations of depletion layer width and junction capacitance with referred to the applied potential
for abrupt, linearly graded and hyperabrupt junctions.
Code:
clc;
clear all;
q=1.6*10^(-19);
eps=11.4*8.85*10^(-12); // Relative Permittivity of Silicon = 11.4
ma=0;
b=10^15; //Constant factor
mlg=1; // For abrupt junction
mha=-1.5; // For linearly graded junction
vo=0.1:0.01:5; // For Hyperabrupt junction
wa=(eps*vo*(ma+2)/(boq*b)).^(1/(ma+2));
wlg=(eps*vo*(mlg+2)/(q*b)).^(1/(mlg+2));
wha=(eps*vo*(mha+2)/(q*b)).^(1/(mha+2)); //Depletion Layer width for abrupt, linearly
graded and hyperabrupt
cja=((q*b*vo)./((ma+2)*eps^(ma+1))).^(-1/(ma+2));
cjlg=((q*b*vo)./((mlg+2)*eps^(mlg+1))).^(-1/(mlg+2));
cjha=((q*b*vo*eps^(mha+1))./(mha+2)).^(-1/(mha+2)); //Junction Capacitance for abrupt, linearly
graded and hyperabrupt
subplot(3,2,1);
plot(vo,cja,'go');
ylabel('Cja')
title('Abrupt Junction');
grid on;
subplot(3,2,3);
plot(vo,cjlg,'bo');
ylabel('Cjlg')
title('Linear Graded Junction');
grid on;
subplot(3,2,5);
plot(vo,cjha,'bo');
ylabel('Cjha')
title('Hyperabrupt Junction');
grid on;
subplot(3,2,2);
plot(vo,wa,'bo');
ylabel('Wa')
title('Abrupt Junction');
grid on;
subplot(3,2,4);
plot(vo,wlg,'go');
ylabel('Wlg')
title('Linear Graded Junction');
grid on;
subplot(3,2,6);
plot(vo,wha,'go');
ylabel('Wha')
title('Hyperabrupt Junction');
grid on;

Graph:

Comment:
Variation of abrupt graded, linearly graded and hyper abrupt has been observed and graph has been plotted
for each case.
 4. For a p+n junction device, the carrier lifetime is 100 ns. Show the variations of the corresponding
diffusion capacitance of the device along with the diffusion resistance for a biasing current range
0-5 mA. Repeat the problem for low frequency region.
Code:
clc;
clear all;
tao=100*10^(-9);
Vt=0.026;
w=2*pi*3*10^9; // carrier lifetime
Io=0:0.01*10^(-3):5*10^(-3);
rdifflow=Vt./Io/1000; // biasing current range
cdifflow=tao.*Io/(2*Vt)*10^9;
rdiffhigh=Vt*sqrt(2/(w*tao))./Io/1000;
cdiffhigh=sqrt(tao/w/2).*Io/Vt*10^9;
rdiffdc=Vt./Io/1000; // diffusion capacitance
cdiffdc=tao.*Io/(Vt)*10^9;
subplot(3,2,1);
plot(Io,rdifflow,'ro');
xlabel('Current (Amp)');
ylabel('Diffusion Resistance(kOhm)');
title('Low Frequency');
grid on;
subplot(3,2,2);
plot(Io,cdifflow,'go')
ylabel('Diffusion Capacitance(nF)');
xlabel('Current (Amp)');
title('Low Frequency');
grid on;
subplot(3,2,3);
plot(Io,rdiffhigh,'bo');
xlabel('Current (Amp)');
ylabel('Diffusion Resistance(kOhm)');
title('High Frequency');
grid on;
subplot(3,2,4);
plot(Io,cdiffhigh,'go')
ylabel('Diffusion Capacitance(nF)');
xlabel('Current (Amp)');
title('High Frequency');
grid on;
subplot(3,2,5);
plot(Io,rdiffdc,'ro');
xlabel('Current (Amp)');
ylabel('Diffusion Resistance(kOhm)');
title('DC');
subplot(3,2,6);
plot(Io,cdiffdc,'go')
ylabel('Diffusion Capacitance(nF)');
xlabel('Current (Amp)');
title('DC');
Graph:

Comment:
The variations of the corresponding diffusion capacitance of the device along with the diffusion resistance
for a biasing current range 0-5 mA has been observed and graph has been plotted.
5. For a pn junction device, the diffusion coefficients of electrons and holes are 34.9 cm2s-1 and 11.64
cm2s1 respectively. Plot the diffusion capacitance when the impressed ac signal lies in Ku band.

Code:
pdc=10^15;
Vt=0.0259;
f=12:0.1:18; //Ku band range
Dn=34.9; // Electron diffusion coefficient
Dp=11.64; // Hole diffusion coefficient
q=1.6*10^(-19);
A=10^-4;
Cdiff=q*A*pdc/Vt./sqrt(2*f*2*pi*10^9)*(sqrt(Dn)+sqrt(Dp))*10^9; // Diffusion Capacitance
plot(f,Cdiff,'r*');
ylabel('Diffusion Capacitance(nF)');
xlabel('Frequency(GHz)');
grid on;

Graph:

Comment:
Variation of the diffusion capacitance when the impressed ac signal lies in Ku band has been observed
graph has been plotted.
 6. Design the equivalent circuit elements of a GaAs based varactor diode at 10 GHz with maximum
Q of 1000. The junction capacitance is ~ 1 pF. Draw the variations of Q in X-band of operation of
the device.

Code:
pi=3.14;
Rd=100000/pi;
Rs=1/40/pi;
cj=10^(-12); // Junction Capacitance
w=8:0.01:12;
Q=cj.*w*10^9*2*pi*Rd^2./(Rs+Rd+cj^2*Rd^2*Rs.*w.^2*(10^9*2*pi)^2); // Quality Factor
plot(w,Q,'b');
ylabel('Quality factor');
xlabel('Frequency (GHz)');
grid on;

Graph:

Comment:
The variations of Q in X-band of operation of the device has been observed and graph has been plotted.
 6. For a biasing current of 50 mA, draw the variations of the intrinsic resistance with respect to the
width to length ratio (w/Ln). Compute the value of the intrinsic resistance for the width to length
ratio of 1.3.
Code:
clc;
clear all;
Vt=0.026;
In=50*10^-3; // Biasing current
ratiowLn=0.5:0.01:20; // Width to Length Ratio
Ri=Vt/In.*sinh(ratiowLn/2)*2.*(atan(sinh(ratiowLn/2))); // Intrinsic Resistance
plot(ratiowLn,Ri,'g*');
ylabel('Intrinsic Resistance');
xlabel('Ratio of W/Ln');

Graph:

Comment:
The variations of the intrinsic resistance with respect to the width to length ratio has been observed.