micromachines

Article
Effect of Nitrogen Doping on the Photoluminescence
of Amorphous Silicon Oxycarbide Films
Jie Song, Rui Huang, Yi Zhang, Zewen Lin, Wenxing Zhang *, Hongliang Li, Chao Song,
Yanqing Guo and Zhenxu Lin *
School of Materials Science and Engineering, Hanshan Normal University, Chaozhou 521041, China;
songjie@hstc.edu.cn (J.S.); rhuang@hstc.edu.cn (R.H.); cavtor@126.com (Y.Z.); 2636@hstc.edu.cn (Z.L.);
lhl4@hstc.edu.cn (H.L.); chaosong@hstc.edu.cn (C.S.); yqguo126@126.com (Y.G.)
* Correspondence: wenxingzhang@hstc.edu.cn (W.Z.); linzhenxu2013@163.com (Z.L.)




Received: 26 August 2019; Accepted: 26 September 2019; Published: 27 September 2019


Abstract: The effect of nitrogen doping on the photoluminescence (PL) of amorphous SiCx Oy films
was investigated. An increase in the content of nitrogen in the films from 1.07% to 25.6% resulted in red,
orange-yellow, white, and blue switching PL. Luminescence decay measurements showed an ultrafast
decay dynamic with a lifetime of ~1 ns for all the nitrogen-doped SiCx Oy films. Nitrogen doping
could also widen the bandgap of SiCx Oy films. The microstructure and the elemental compositions of
the films were studied by obtaining their Raman spectra and their X-ray photoelectron spectroscopy,
respectively. The PL characteristics combined with an analysis of the chemical bonds configurations
present in the films suggested that the switching PL was attributed to the change in defect luminescent
centers resulting from the chemical bond reconstruction as a function of nitrogen doping. Nitrogen
doping provides an alternative route for designing and fabricating tunable and efficient SiCx Oy -based
luminescent films for the development of Si-based optoelectronic devices.

Keywords: photoluminescence; amorphous silicon oxycarbide; nitrogen doping; defect; plasma

enhanced chemical vapor deposition

1. Introduction
Efficient silicon (Si)-based luminescent materials are indispensable components to realize a cheap
and complementary metal oxide semiconductor (CMOS) optical integration. Thus far, different
systems of Si-based luminescent materials, such as SiOx , SiNx , SiCx , and SiNx Oy , have been developed,
and efforts have been devoted to understanding and ameliorating the light emission of Si-based
materials [1–9]. Silicon oxycarbide (SiCx Oy ) has been widely explored because of its strong light
emission and high solid solubility for rare earths [10–13]. SiCx Oy also features a tunable band gap.
As such, it is beneficial to obtaining strong white electroluminescence at a low driving voltage in
SiCx Oy -based light-emitting diodes [14]. In the recent reference, Gallis et al. systematically studied
the white photoluminescence (PL) dynamics from SiCx Oy film, where the band tail states related to
the Si−O−C and/or the Si−C bonds were suggested as the sources of the luminescence [11]. Recently,
optical gain was demonstrated in a-SiCx Oy under ultraviolet excitation, which was attributed to the
formation of a three-level luminescence model with the intermediate level related to Si dangling bond
(DB) defects radiative state [15]. Furthermore, an increase in C content in SiCx Oy films can cause a
strong light emission ranging from near-infrared to orange regions [15]. Although performance is
enhanced in SiCx Oy films, progress remains slow. The main obstacle lies in the fact that the light
emission efficiency generally remains too low to allow the fabrication of efficient light-emitter devices.
To date, studies on the effect of doping on the optical properties of SiCx Oy films have mainly focused

Micromachines 2019, 10, 649; doi:10.3390/mi10100649 www.mdpi.com/journal/micromachines

Micromachines 2019, 10, 649 2 of 7

on rare earth (RE) doping, such as Er and Eu doping [16–18]. However, up to now, the effect of other
elements on the optical properties of SiCx Oy films is still unclear.
In this letter, the effect of nitrogen doping on the PL of amorphous SiCx Oy film was investigated.
Interestingly, an increase in nitrogen content in the films induced strong red, orange-yellow, white, and
blue switching PL. Combining the PL results with the analysis of the microstructure and the chemical
bonding configurations within the films, it suggests that the rearrangement of chemical bonds with
varying nitrogen plays an important role in the evolution of PL characteristics in the films.

2. Materials and Methods

Nitrogen-doped SiCx Oy films with the thickness of 550 nm were grown at 250 ◦ C on Si substrates
and quartz by radio frequency (RF) glow-discharge decomposition of SiH4 , CH4 , O2 , and NH3 mixtures
in the very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) system. The flow
rates of SiH4 , CH4 , and O2 were kept at 3.5, 5, and 1.2 sccm, respectively, whereas the flow rate of NH3
varied from 0.5 sccm to 5 sccm to control the N content in the films. The films were named Sx (x = 1, 2,
3, 4) for the NH3 flow rates at 0.5, 1, 3, and 5 sccm, respectively. The RF power and the deposition
pressure for the growth were maintained at 30 W and 20 Pa, respectively. The optical band gaps
of the films were calculated using the Tauc method, which were determined by spectrophotometer
(Shimadzu UV-3600, Shimadzu Corporation, Kyoto, Japan). The PL spectra of the films were measured
at room temperature by use of a fluorescence spectrophotometer (Jobin Yvon fluorolog-3, Horiba,
Ltd., Kyoto, Japan). Time resolved PL were measured by use of an Edinburgh FLS1000 spectrometer
(Edinburgh Instruments Ltd., Livingston, UK) equipped with a 600 mW 375 nm-laser beam with the
repetition rate of 20 MHz. The microstructures of the films were characterized by Raman spectra.
The chemical bonds of the films were examined by Fourier transform infrared (FTIR) absorption, and
Si, O, C, and N contents in the films were identified through X-ray photoelectron spectroscopy.

3. Results and Discussion

Figure 1a shows the PL spectra of the SiCO:N films prepared at different NH3 flow rates. Strong
visible light emission could be tuned from red to blue regions at room temperature by adjusting the
NH3 flow rates increased from 0.5 sccm to 5 sccm. Red, orange-yellow, white, and blue switching
luminescence were strong enough to be seen with naked eyes even at 325 nm Xe lamp light excitation.
Figure 1b illustrates the optical band gap energy of the films as a function of the NH3 flow rate.
The optical band gap Eopt of the films was obtained in accordance with the Tauc plot Equation (1):

(αhν)1/2 = A1/2 (hν − Eopt ) (1)

where α is the absorption coefficient, A is a coefficient quantifying the slope of the absorption edge,
and hν is the photon energy [19]. The calculated Eopt increases linearly from 2.83 eV to 3.66 eV as the
NH3 flow rate increases from 0.5 sccm to 5 sccm. This finding demonstrates that N doping can widen
the bandgap of SiCx Oy films, which may result from the substitution of stronger Si–N bonds for weak
Si–Si bonds or Si–C bonds. The comparison of PL with Eopt results indicated that the value of PL peak
energy of all the films was obviously smaller than the corresponding Eopt , suggesting that the origin of
PL was not from the band-to-band recombination.
The microstructure of the SiCO:N films was examined using Raman spectra (Figure 2a) to
further understand the origin of PL characteristics. All the SiCO:N films exhibited similar line shape
characteristics typical of amorphous silicon-based materials. A broad Raman band, which was ascribed
to the transverse optical (TO) vibration mode of amorphous silicon, peaked at ~470 cm−1 for all the
SiCO:N films. These results showed that all the SiCO:N films had a uniform amorphous structure
without the presence of Si nanocrystals [20]. Furthermore, there was no obvious change in the
surface morphology of the films prepared at different NH3 flow rates, as was revealed by atomic force
microscopy (Figure 2b).
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Figure
Figure1. 1. (a)
(a) Photoluminescence
Photoluminescence (PL) (PL)spectra
spectraofofthethe SiCO:N
SiCO:N films
films prepared
prepared by different
by different NH3NH 3 flow
flow rates:
Figure
rates: S1 1.
(0.5(a)sccm),
Photoluminescence
S2 (1 sccm), S3 (PL)
(3 spectra
sccm), and of
S4 the
(5 SiCO:N
sccm). Thefilms
inset prepared
is the by different
optical images ofNH
PL 3 flow
from
S1 (0.5 sccm), S2 (1 sccm), S3 (3 sccm), and S4 (5 sccm). The inset is the optical images of PL from the
rates:
the filmsS1 under
(0.5 sccm),
325 S2 (1
nm Xesccm),
lamp S3 (3 sccm),
light and S4
excitation. (b) (5 sccm).
The Theband
optical insetgap
is the
of optical
the images
SiCO:N of PL
films vs.from
the
films under 325 nm Xe lamp light excitation. (b) The optical band gap of the SiCO:N films vs. the NH3
the3 films
NH flow underThe325 nm Xe lampthelight excitation. (b) The ofoptical band film
gap of the SiCO:N films vs. the
rates.rates.
The insetinset shows ((αhν) 1/2·vs·hν)
flow shows the ((αhν) 1/2 ·vs·hν) plotplot
of the the SiCO:N
SiCO:N film Sx (xSx=(x1,=2,1,3,2,4).
3, 4).
NH3 flow rates. The inset shows the ((αhν)1/2·vs·hν) plot of the SiCO:N film Sx (x = 1, 2, 3, 4).

Figure
Figure 2.2. (a)
(a)Raman
Ramanspectra
spectraofofthe
theSiCO:N
SiCO:Nfilms
filmswith
withvarious
variousNHNH3 3flow
flowrates,
rates,(b)
(b)atomic
atomicforce
force
Figure 2.
microscopic (a)
microscopic imagesRaman spectra
images ofofthe SiCO:N
the of
SiCO:Nthe
filmsSiCO:N films
prepared
films with various
by different
prepared NH
NH3 flow
by different 3 flow rates, (b) atomic force
NHrates: S1 rates:
3 flow (0.5 sccm), S2 (1sccm),
S1 (0.5 sccm),
microscopic
S3
S2 (1(3sccm),
sccm),S3 images
and(3 S4 (5 of
sccm), the S4
sccm).
and SiCO:N films prepared by different NH3 flow rates: S1 (0.5 sccm),
(5 sccm).
S2 (1 sccm), S3 (3 sccm), and S4 (5 sccm).
Thefilms
The films were
were measured
measured by by time-resolved
time-resolved PL PLto toobtain
obtainfurther
furtherinsights
insightsinto intothethePL
PLmechanism
mechanism of
the The
SiCO:N films were
films measured
(Figure 3). The by time-resolved
decay curves PL
could tobeobtain
fitted further
with
of the SiCO:N films (Figure 3). The decay curves could be fitted with a double exponential function: a insights
double into the
exponential PL mechanism
function:
of the SiCO:N films (Figure 3). The decay curves could be fitted with a double exponential function:
−t −t
I (t) = A1 exp( ) − +t A2 exp( )−t (2)
I (t ) = A1 exp(τ1 −t) + A2 exp( τ2 −t) (2)
I (t ) = A1 exp(τ1 ) + A2 exp(τ 2 ) (2)
where Ai and τi (i = 1, 2) are the normalized amplitudes τ1 of the components
τ2 and the time constants,
respectively
where Ai and[21]. τi (i The
= 1, obtained
2) are theaveragenormalized lifetime of the SiCO:N
amplitudes of thefilms was about
components and 1 ns.
the The
timeluminescent
constants,
where A
dynamic behavior
respectively i and τ i (i
[21]. The =
was1, 2) are the
similar average
obtained normalized
to that observed amplitudes
lifetime of in the of
defect-related the
SiCO:N films components
luminescent and
was aboutSi-based the
1 ns. The time constants,
materials,
luminescent such
respectively
as SiN
dynamic O
x behavior
y
[21].
and SiC The
wasO obtained
[19,21]. average
Furthermore, lifetimeit of
was the
alsoSiCO:N
found films
that was
the
x ysimilar to that observed in defect-related luminescent Si-based materials, such
about 1
luminescence ns. The luminescent
decay lifetimes
dynamic
in
as ourxO
SiN case behavior
y and were was similar
SiCshorter
xOy [19,21].
to thatinobserved
than Furthermore,
those the band-tailin defect-related
it was recombination
also found that luminescent
model
the Si-based
where
luminescence materials,
a broader
decay such
band-tail
lifetimes
as
in SiN
brought x
our case O y and
a longer SiC
were shorterx O
lifetime,
y [19,21].
thanas the Furthermore,
those photogenerated it
in the band-tail was also
carriers found that the
could be model
recombination luminescence
thermalized whereinto decay lifetimes
deeperband-tail
a broader localized
in our
states case
[22]. were shorter
Therefore, the than
results those in
suggested the band-tail
that the recombination
light emission
brought a longer lifetime, as the photogenerated carriers could be thermalized into deeper localized ofmodel
the where
SiCO:N a
filmsbroader band-tail
originated from
brought
the defect
states a longer
[22]. luminescent lifetime,
Therefore, the as
centers the
results photogenerated
in the carriers could be thermalized
films. that the light emission of the SiCO:N films originated
suggested into deeper localized
states [22]. Therefore, the
from the defect luminescent centers infilms
The FTIR spectra of results
the SiCO:N suggested thatobtained
were
the films. the lightto emission
study the of local
the SiCO:N
bondingfilms originated
changes in the
fromThe
films the
grown defectat luminescent
different
FTIR spectra of the SiCO:N NH centers
3 flow in
rates the films.
(Figure 4). In the S1 film, the vibration
films were obtained to study the local bonding changes in the modes related to
films The
Si–C,grown FTIR
Si–N, C–Si–O, spectra
at different of
Si–H,NH the
and SiCO:N
C–Hrates
3 flow
films
bonds(Figurewere
could be obtained
4). clearly to study
In the observed. the
S1 film, the Thelocal bonding
bands centered
vibration changes in
at 860 and
modes related the
to
films
1039 cmgrown
−1 could at different
be ascribed NH to 3 flow
Si–N rates
and (Figure
C–Si–O 4). In
stretching the
Si–C, Si–N, C–Si–O, Si–H, and C–H bonds could be clearly observed. The bands centered at 860 and S1 film,
modes, the vibration
respectively modes
[23,24]. related
Additionally, to
Si–C,
a band
1039 Si–N,
cmatcould
−1 C–Si–O,
1265 cm −1 Si–H, and
was assigned
be ascribed C–H
to Si–N to bonds
and theC–Si–Ocould be
Si–CHstretching clearly
3 stretching
observed.
vibration
modes, The bands
[25]. A small
respectively centered
band
[23,24]. at 860
shoulder at
Additionally, and
a1039
bandcm
−1 could be ascribed to Si–N and C–Si–O stretching modes, respectively [23,24]. Additionally,
at 1265 cm−1 was assigned to the Si–CH3 stretching vibration [25]. A small band shoulder at
a band at 1265 cm−1 was assigned to the Si–CH3 stretching vibration [25]. A small band shoulder at
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800 cm−1−1
−1 was observed and was assigned to the Si–C stretching vibration [24]. A distinct absorption
800
800 cm
cm was wasobserved
observed and
andwas
wasassigned
assignedto tothe
theSi–C
Si–Cstretching
stretching vibration
vibration [24].
[24]. A A distinct
distinct absorption
absorption
peak at 2170 cm−1 −1 and a weak band located at 2965 cm−1 were attributed to the Si–H and the C–H
peak
peak atat 2170 cm −1and andaa weak
weak band
band located
located at at 2965
2965 cm cm−1−1were
wereattributed
attributed to
to the
the Si–H
Si–H and
and the
the C–H
C–H
stretching vibrations, respectively [26]. A weak band around 3375 cm−1 −1 was associated with the N–H
stretching
stretching vibrations, respectively [26]. A weak band around 3375 cm was −1 wasassociated
associatedwith withthe the N–H
N–H
stretching mode [23]. The most important feature for the FTIR spectra was the strong dependence of
stretching
stretching mode
mode[23].
[23].The
Themost
mostimportant
importantfeaturefeature forfor
the FTIR
the FTIR spectra
spectrawas thethe
was strong
strongdependence
dependence of
major bands on NH3 flow rates. As the NH3 flow rates increased, the intensity of C–Si–O bonds
major
of majorbands onon
bands NH 3 flow
NH 3 rates.
flow As
rates. Asthethe NHNH 3 flow
3 flow rates
ratesincreased,
increased, the
the intensity
intensity of
of C–Si–O
C–Si–O bonds
bonds
gradually decreased, and the peak gradually became red shifted. As the NH3 flow rate increased to
gradually
gradually decreased,
decreased, andand the
the peak
peak gradually
gradually becamebecame red shifted. As
red −1 As the
the NHNH3 flow
flow rate
rate−1increased
increased to to
3 sccm, this band broadened and red shifted to ~1010 cm−1 with a shoulder at3 ~940 cm−1 , which was
33 sccm,
sccm, this band broadened and and red
red shifted
shifted to to~1010
~1010 cm cm−1 with a shoulder at ~940 ~940 cm −1,,whichwhich waswas
assigned to the N–Si–O vibration [27]. As the NH3 flow rate further increased to 5 sccm, the band of
assigned
assigned to the N–Si–O
N–Si–Ovibration
vibration[27].
[27].AsAsthetheNH NH flowrate
3 3flow ratefurther
further increased
increased to to 5 sccm,
5 sccm, thetheband band of
of the
the N–Si–O vibration became dominant, indicating that the silicon oxycarbide-dominant phase of the
the N–Si–O
N–Si–O vibration
vibration became
became dominant,
dominant, indicating
indicating thatthat the silicon
the silicon oxycarbide-dominant
oxycarbide-dominant phasephase of film
of the the
film transformed into silicon oxynitride. Apparently, the increase in the NH3 flow rate resulted in
film transformed
transformed into silicon
into silicon oxynitride.
oxynitride. Apparently,
Apparently, the increase
the increase in 3the
in the NH NH
flow 3 flow
rate rate resulted
resulted in chemical in
chemical bond reconstruction in the films. Based on the FTIR spectra, the evolution of PL
chemical bond reconstruction
bond reconstruction in the films.inBasedthe on films. Basedspectra,
the FTIR on the theFTIR spectra,
evolution of PLthe evolution ofcould
characteristics PL
characteristics could be suggested from the chemical bond reconstruction in SiCO:N films.
characteristics
be suggested from could bechemical
the suggested from
bond the chemical in
reconstruction bond reconstruction
SiCO:N films. in SiCO:N films.

Figure 3.
Figure 3. Room temperature
Roomtemperature
3.Room time
temperaturetime resolved
timeresolved photoluminescence
resolvedphotoluminescence for the
photoluminescence for
for the SiCO:N
SiCO:N films
films with
with various
various NH
NH3
Figure the SiCO:N films with various NH33
flow
flow rates.
rates.
flow rates.

Figure 4.
Figure Fouriertransform
4. Fourier transforminfrared
infrared (FTIR)
(FTIR) spectra
spectra of the
of the SiCO:N
SiCO:N films
films grown
grown at different
at different NH3 NH
flow3
Figure
flow 4. Fourier transform infrared (FTIR) spectra of the SiCO:N films grown at different NH3 flow
rates.
rates.
rates.
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The composition
The composition of of the
the SiCO:N
SiCO:N films
films was
was examined
examined through
through X-ray
X-ray photoelectron
photoelectron spectroscopy
spectroscopy
(XPS) (Figure
(XPS) (Figure5). 5). The
The atomic
atomic percentages
percentages of of Si,
Si, C,
C, O,
O, and
and N Nin inthe
theSiCO:N
SiCO:Nfilm filmfabricated
fabricatedat atan
anNHNH33
flowrate
flow rateofof0.5
0.5sccm
sccmwere
were 51.89%,
51.89%, 19.82%,
19.82%, 27.22%,
27.22%, andand 1.07%,
1.07%, respectively.
respectively. ThisThis finding
finding indicated
indicated that
thatSi-rich
the the Si-rich
siliconsilicon oxycarbide
oxycarbide phase phase was dominant
was dominant in the S1infilm.
the S1
Thefilm. The change
change in the XPSin the XPSwas
spectra spectra
the
was thedecrease
gradual gradual in decrease
Si and C in concentrations
Si and C concentrations with theinincrease
with the increase in N concentration
N concentration and NH3 flow andrates
NH3
flow rates
(Figure 5). (Figure
As the NH 5). As the rate
3 flow NH3increased
flow rate toincreased
5 sccm, tothe5 N
sccm, the N concentration
concentration rapidly increased
rapidly increased to 25.6%,
to 25.6%,the
whereas whereas
Si and the C Siconcentrations
and the C concentrations
decreased todecreased
40.8% andto8.22%,
40.8%respectively.
and 8.22%, respectively.
This finding wasThis
finding was
consistent withconsistent withresults
the observed the observed results
in the FTIR in the
spectra FTIRinspectra
shown Figure shown inthe
4, that is, Figure 4, that
N–Si–O is, the
vibration
N–Si–O
band vibration
became band while
dominant, became thedominant, while the
C–Si–O vibration bandC–Si–O vibration
significantly band significantly
weakened as the NH3weakened
flow rate
as the NHto
increased 3 flow
5 sccm.rateThis
increased
result to 5 sccm. that
indicated Thistheresult indicated
dominant thatinthe
phase thedominant phasefrom
films changed in the films
silicon
changed from
oxycarbide siliconoxynitride
to silicon oxycarbidewhen to silicon
the NHoxynitride
3 flow rate when the NH
increased to3 flow
5 sccm.rate increased to 5 sccm.

Figure5.5. The
Figure The atom
atom concentration
concentration of
of Si,
Si, C,
C, O,
O, and
and N
N of
ofthe
theSiCO:N
SiCO:Nfilms
filmsagainst
againstthe
theNH
NH33 flow
flow rates.
rates.

The
ThePL PL decay
decay analysis
analysis (Figure
(Figure3) 3) revealed
revealed thatthat the
the luminescent
luminescent dynamic
dynamic behavior
behavior in in the
the nitrogen
nitrogen
doped
doped SiC SiCxxOOyy films
films featured
featured aa defect-related
defect-related luminescent
luminescent characteristic,
characteristic, as asobserved
observedin inSiN
SiNxxO
Oyy and
and
SiC O films. Previous studies clarified that C-related nonbridging oxygen
SiCxxOyy films. Previous studies clarified that C-related nonbridging oxygen hole centers (NBOHC) are hole centers (NBOHC)
are
thethe principal
principal radiative
radiative recombination
recombination centers
centers in silicon
in silicon oxycarbide,
oxycarbide, and and
theythey are responsible
are responsible for
for light
light emission ranging from the green region to the red region [28]. In our case,
emission ranging from the green region to the red region [28]. In our case, the PL intensity in the film the PL intensity in the
film decreased
decreased as theas the
NHNH 3 flow
3 flow raterate increased.
increased. This This change
change waswassimilar
similartotothat
thatof of the
the intensity
intensity ofof the
the
C–Si–O
C–Si–Obondsbonds(Figure
(Figure4). 4). Therefore,
Therefore, the the observed
observed tunable
tunable light
light emissions
emissionsfromfromgreengreento to red
red may
may have
have
originated
originatedfrom fromrecombination
recombinationthrough throughC-related
C-relatedNBOHC
NBOHCdefects
defectsininSiC
SiCx O
xO yy films.
films. The
The PL PL spectra
spectra ofof
the
the S3
S3 film
filmcould
couldbe bedeconvoluted
deconvolutedinto intoaastrong
stronggreen
greenband
bandandandaaweak
weakblueblueband.band.As AsthetheNHNH33 flow
flow
rate
rateincreased
increasedtoto55sccm, sccm,thetheintensity
intensityofofthethegreen
green PLPLband
banddecreased
decreased dramatically,
dramatically, whereas
whereas the the
blueblue
PL
band of the film S4 became dominant. This behavior could be attributed
PL band of the film S4 became dominant. This behavior could be attributed to the change in the to the change in the dominant
phase
dominantof the filmsoffrom
phase siliconfrom
the films oxycarbide to silicon oxynitride
silicon oxycarbide as a result of
to silicon oxynitride as the increase
a result of theinincrease
NH3 flow in
rate to 5 sccm (Figure 4). In the case of amorphous SiN O films, the
NH3 flow rate to 5 sccm (Figure 4). In the case of amorphous SiNxOy films, the blue PL could be
x y blue PL could be ascribed to
the radiative
ascribed to therecombination between N–Si–O
radiative recombination betweendefect statesdefect
N–Si–O and the valence
states and theband tail states
valence band[27].
tail Thus,
states
the
[27].blue PL the
Thus, from blueS3 and S4 was
PL from likely
S3 and S4from
was N–Si–O
likely fromdefect luminescent
N–Si–O centers.
defect luminescent centers.

4.
4. Conclusions
Conclusions
In
Insummary,
summary,wewe report the the
report effect of nitrogen
effect dopingdoping
of nitrogen on the PL
on of amorphous
the SiCx Oy films.
PL of amorphous SiCxNitrogen
Oy films.
doping
Nitrogen candoping
inducecan
strong red, orange-yellow,
induce white, and blue
strong red, orange-yellow, switching
white, and bluePL with a recombination
switching PL with a
lifetime in nanoseconds.
recombination lifetime inThis process can also
nanoseconds. Thiswiden
processthecan
band gap
also of SiCthe
widen x Oyband
films.gap
TheofPL results
SiC and
xOy films.
the
TheFTIR analyses
PL results andreveal that the
the FTIR switching
analyses characteristics
reveal in PL originate
that the switching from the
characteristics in variation in defect
PL originate from
the variation in defect luminescent centers resulting from the chemical bond re-construction as a
function of nitrogen doping. Apparently, nitrogen doping provides an alternative route for designing
Micromachines 2019, 10, 649 6 of 7

luminescent centers resulting from the chemical bond re-construction as a function of nitrogen doping.
Apparently, nitrogen doping provides an alternative route for designing and fabricating tunable and
efficient SiCx Oy -based luminescent films for the development of Si-based optoelec-tronic devices.

Author Contributions: Data curation, J.S. and Z.L. (Zhenxu Lin); Investigation, Y.Z., Z.L. (Zewen Lin), and H.L.;
Methodology, C.S., and Y.G., All authors analyzed the experimental data; Writing–review & editing, J.S., Z.L.
(Zhenxu Lin), R.H. and W.Z.; All authors participated in discussions and knew implications of the work.
Funding: This work was supported by National Natural Science Foundation of China (Nos. 61274140), Natural
Science Foundation of Guangdong Province (2015A030313871), Young Talents in Higher Education of Guangdong
(2017KQNCX129), the Distinguished Young Teacher Training Program in Higher Education of Guangdong
(YQ2015112), Science and Technology Planning Project of Guangdong Province (2017B090921002) and Science and
Technology Planning Project of Chaozhou (2018SS24).
Conflicts of Interest: The authors declare no conflict of interest.

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