Electronics Engineering Program – PUPSTB

ECEN 3282
BASIC ELECTRONICS 1

Experiment #10: Semiconductor Diode Characteristics

Pre-Lab: 1. Know the terminal pins of the diode based on its packaging.

2. Secure a data sheet for your diode’s operating voltage.

Objectives:

1. To determine the diode polarity and to understand the need for correct connection.

2. To obtain knowledge of the forward and reverse voltage/current characteristics of the diode.

Materials:

Diode 1N4148, 10kΩ or 100kΩ potentiometer, 100Ω resistor, DC power supply, Multitester

Discussion:

Semiconductor diodes contain an “N” type of material connected to a “P” type of material. The P
material (anode) is developed by mixing a trivalent impurity with either silicon or germanium. The N
material (cathode) is developed in a similar manner by mixing a pentavalent impurity with either silicon
or germanium. A PN diode (made of both materials) has uniconduction capabilities. It conducts well in
one direction and is nonconductive in the reverse direction.

Maximum anode-cathode current (IAK) of a diode occurs when a very small value of anode-cathode
voltage (VAK) is applied in the forward bias direction. In the reverse bias direction, current flow is
minimal and negligible. The maximum reverse bias voltage that can be applied before damage occur to
the diode is called the peak reverse voltage (PRV).

Procedures:

1. Testing the diode.

An ohmmeter is an effective means of testing a diode. When the positive probe of the ohmmeter is
connected to the P material (anode) and the negative probe is connected to the N material (cathode),
conduction will occur and indicate low resistance. Reversing the ohmmeter probes to the diode should
indicate a high or infinite resistance.
2. Construct the following circuit connection on your breadboard. Identify the terminals of the
potentiometer. The diode is forward biased here.

2. Turn the potentiometer to zero. Switch on the power supply and adjust it to supply 15V.

3. Adjust the potentiometer to give a voltage of 1V across AB (VAB).

4. Now use the power supply variable control to set VAB to: 0, 0.1V, 0.2V, etc, up to 1.0V.

5. Measure Vr for each setting and record in Table A.

Vr
6. Compute Vd = VAB – Vr and Id = 100.

7. Plot the graph of Vd (x-axis) and Id (y-axis).

8. Reverse the diode on the circuit and repeat steps 2 to 7. (The diode is reverse biased).
Electronics Engineering Program – PUPSTB
ECEN 3282
BASIC ELECTRONICS 1

Experiment #10: Semiconductor Diode Characteristics

EVALUATION SHEET:

Name: ______________________________________________________

Date: ________________________

TABLE A:

Forward Bias Reverse Bias

Vs (V)
Vr (V) Vd (V) Id (mA) Vr (V) Vd (V) Id (mA)

0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1

GRAPH: Vd vs. Id (Attached additional Sheets)

CONCEPTUAL QUESTIONS:

1. When the diode polarities were changed, what happens to the current?

2. At what approximate value of Vd does the current Id begin to rise noticeably?

3. Does Vd rise much above this value for large values of Id?

4. What is forward biasing and reverse biasing?