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Induction Heating Series
Reverse conducting IGBT with monolithic body diode
IHW30N110R3
Data sheet
Industrial Power Control

Free Datasheet http://www.Datasheet4U.com
IHW30N110R3
Reverse conducting IGBT with monolithic body diode

Features: C
• Powerful monolithic body diode with low forward voltage

designed for soft commutation only
• Very tight parameter distribution
• High ruggedness, temperature stable behavior
• Low VCEsat G
• Easy parallel switching capability due to positive temperature E
coefficient in VCEsat
• Low EMI
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
• Inductive cooking
• Microwave oven G
C
E
Key Performance and Package Parameters

Type VCE IC VCEsat, Tvj=25°C Tvjmax Marking Package
IHW30N110R3 1100V 30A 1.55V 175°C H30N110R3 PG-TO247-3
2 Rev. 1.3, 2013-02-12

IHW30N110R3
Table of Contents
Description .................................................................................................................................................... 2
Table of Contents ......................................................................................................................................... 3
Maximum ratings .......................................................................................................................................... 4
Thermal Resistance ...................................................................................................................................... 4
Electrical Characteristics .............................................................................................................................. 5
Electrical Characteristics diagrams .............................................................................................................. 7
Package Drawing ....................................................................................................................................... 13
Testing Conditions ...................................................................................................................................... 14
Revision History .......................................................................................................................................... 15
Disclaimer ................................................................................................................................................... 15
3 Rev. 1.3, 2013-02-12

IHW30N110R3
Maximum ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1100 V
DC collector current, limited by Tvjmax
TC = 25°C IC 60.0 A
TC = 100°C 30.0
Pulsed collector current, tp limited by Tvjmax ICpuls 90.0 A
Turn off safe operating area VCE  1100V, Tvj  175°C - 90.0 A
Diode forward current, limited by Tvjmax
TC = 25°C IF 60.0 A
TC = 100°C 30.0
Diode pulsed current, tp limited by Tvjmax IFpuls 90.0 A
Gate-emitter voltage ±20
Transient Gate-emitter voltage (tp  10µs, D < 0.010) VGE V
±25
Power dissipation TC = 25°C 333.0
Ptot W
Power dissipation TC = 100°C 166.0
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+175 °C
Soldering temperature,
°C
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
Mounting torque, M3 screw
M 0.6 Nm
Maximum of mounting processes: 3
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
Rth(j-c) 0.45 K/W
junction - case
Diode thermal resistance,
Rth(j-c) 0.45 K/W
junction - case
Thermal resistance
Rth(j-a) 40 K/W
junction - ambient
4 Rev. 1.3, 2013-02-12

IHW30N110R3
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified

Value
Parameter Symbol Conditions Unit
min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V(BR)CES VGE = 0V, IC = 0.50mA 1100 - - V
VGE = 15.0V, IC = 30.0A
Tvj = 25°C - 1.55 1.75
Collector-emitter saturation voltage VCEsat Tvj = 125°C - 1.85 - V
Tvj = 175°C - 2.00 -
VGE = 0V, IF = 30.0A
Tvj = 25°C - 1.35 1.55
Diode forward voltage VF Tvj = 125°C - 1.38 - V
Tvj = 175°C - 1.41 -
Gate-emitter threshold voltage VGE(th) IC = 0.70mA, VCE = VGE 5.1 5.8 6.4 V
VCE = 1100V, VGE = 0V
Zero gate voltage collector current ICES Tvj = 25°C - - 5.0 µA
Tvj = 175°C - - 2500.0
Gate-emitter leakage current IGES VCE = 0V, VGE = 20V - - 100 nA
Transconductance gfs VCE = 20V, IC = 30.0A - 15.0 - S
Integrated gate resistor rG none 
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified

Value
min. typ. max.
Dynamic Characteristic
Input capacitance Cies - 1460 -
Output capacitance Coes VCE = 25V, VGE = 0V, f = 1MHz - 55 - pF
Reverse transfer capacitance Cres - 45 -
VCC = 880V, IC = 30.0A,
Gate charge QG VGE = 15V - 180.0 - nC
Internal emitter inductance

measured 5mm (0.197 in.) from LE - 13.0 - nH
case
Switching Characteristic, Inductive Load

Value
min. typ. max.
IGBT Characteristic, at Tvj = 25°C
Turn-off delay time td(off) Tvj = 25°C, - 350 - ns
tf VCC = 600V, IC = 30.0A,
Fall time - 16 - ns
VGE = 0.0/15.0V,
Turn-off energy Eoff rG = 15.0, L = 80nH, - 1.15 - mJ
C = 39pF
L, C from Fig. E
Energy losses include “tail” and
diode reverse recovery.
5 Rev. 1.3, 2013-02-12

IHW30N110R3
Switching Characteristic, Inductive Load

Value
min. typ. max.
IGBT Characteristic, at Tvj = 175°C
Turn-off delay time td(off) Tvj = 175°C, - 410 - ns
tf VCC = 600V, IC = 30.0A,
Fall time - 60 - ns
VGE = 0.0/15.0V,
Turn-off energy Eoff rG = 15.0, L = 80nH, - 1.80 - mJ
C = 39pF
L, C from Fig. E
Energy losses include “tail” and
diode reverse recovery.
6 Rev. 1.3, 2013-02-12

IHW30N110R3
100 100
90
80
IC, COLLECTOR CURRENT [A]

70
10 tp=1µs
TC=80°
60 10µs
TC=110°
20µs
50
50µs
40 500µs
1 5ms
30
DC
20
10
0 0.1
1 10 100 1000 1 10 100 1000
f, SWITCHING FREQUENCY [kHz] VCE, COLLECTOR-EMITTER VOLTAGE [V]
Figure 1. Collector current as a function of switching Figure 2. Forward bias safe operating area
frequency (D=0, TC=25°C, Tj175°C; VGE=15V)
(Tj175°C, D=0.5, VCE=600V, VGE=15/0V,
rG=15)
350 60
300
Ptot, POWER DISSIPATION [W]
250
40
200
150
20
100
50
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC, CASE TEMPERATURE [°C] TC, CASE TEMPERATURE [°C]
Figure 3. Power dissipation as a function of case Figure 4. Collector current as a function of case
temperature temperature
(Tj175°C) (VGE15V, Tj175°C)
7 Rev. 1.3, 2013-02-12

IHW30N110R3
90 90
80 VGE=20V 80 VGE=20V
17V 17V
70 70

15V 15V
60 13V 60 13V
11V 11V
50 50
9V 9V
40 7V 40 7V
5V 5V
30 30
20 20
10 10
0 0
0 1 2 3 0 1 2 3 4
VCE, COLLECTOR-EMITTER VOLTAGE [V] VCE, COLLECTOR-EMITTER VOLTAGE [V]
Figure 5. Typical output characteristic Figure 6. Typical output characteristic
(Tj=25°C) (Tj=175°C)
90
Tj=25°C IC=15A
Tj=175°C IC=30A
80
VCE(sat), COLLECTOR-EMITTER SATURATION [V]
IC=60A
3
70
60
50
40
2
30
20
10
0 1
4 6 8 10 12 14 25 50 75 100 125 150 175
VGE, GATE-EMITTER VOLTAGE [V] Tj, JUNCTION TEMPERATURE [°C]
Figure 7. Typical transfer characteristic Figure 8. Typical collector-emitter saturation voltage as
(VCE=20V) a function of junction temperature
(VGE=15V)
8 Rev. 1.3, 2013-02-12

IHW30N110R3
td(off) td(off)
tf tf
1000 1000
t, SWITCHING TIMES [ns]

100 100
10 10
10 20 30 40 50 60 10 20 30 40 50
IC, COLLECTOR CURRENT [A] rG, GATE RESISTOR []
Figure 9. Typical switching times as a function of Figure 10. Typical switching times as a function of gate
collector current resistor
(ind. load, Tj=175°C, VCE=600V, VGE=15/0V, (ind. load, Tj=175°C, VCE=600V, VGE=15/0V,
rG=15, test circuit in Fig. E) IC=30A, test circuit in Fig. E)
8
td(off) typ.
1000 tf
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE [V]
7
6
100
4
10
1 2
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Tj, JUNCTION TEMPERATURE [°C] Tj, JUNCTION TEMPERATURE [°C]
Figure 11. Typical switching times as a function of Figure 12. Gate-emitter threshold voltage as a function
junction temperature of junction temperature
(ind. load, VCE=600V, VGE=15/0V, IC=30A, (IC=0.7mA)
rG=15, test circuit in Fig. E)
9 Rev. 1.3, 2013-02-12
IHW30N110R3
4 3
Eoff Eoff
E, SWITCHING ENERGY LOSSES [mJ]

3
0 0
0 15 30 45 60 10 20 30 40 50
IC, COLLECTOR CURRENT [A] rG, GATE RESISTOR []
Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a
function of collector current function of gate resistor
(ind. load, Tj=175°C, VCE=600V, VGE=15/0V, (ind. load, Tj=175°C, VCE=600V, VGE=15/0V,
rG=15, test circuit in Fig. E) test circuit in Fig. E)
2 2.2
Eoff Eoff
2.0
1.8
1.6
1.4
0 1.2
25 50 75 100 125 150 175 300 400 500 600 700 800 900
Tj, JUNCTION TEMPERATURE [°C] VCE, COLLECTOR-EMITTER VOLTAGE [V]
Figure 15. Typical switching energy losses as a Figure 16. Typical switching energy losses as a
function of junction temperature function of collector emitter voltage
(ind load, VCE=600V, VGE=15/0V, IC=30A, (ind. load, Tj=175°C, VGE=15/0V, IC=30A,
rG=15, test circuit in Fig. E) rG=15, test circuit in Fig. E)
10 Rev. 1.3, 2013-02-12
IHW30N110R3
16
220V
880V
14
VGE, GATE-EMITTER VOLTAGE [V]
12 1000
Ciss
Coss
C, CAPACITANCE [pF]
Crss
10
6 100
0 10
0 40 80 120 160 200 0 10 20 30
QGE, GATE CHARGE [nC] VCE, COLLECTOR-EMITTER VOLTAGE [V]
Figure 17. Typical gate charge Figure 18. Typical capacitance as a function of
(IC=30A) collector-emitter voltage
(VGE=0V, f=1MHz)
1 1
ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W]
ZthJC, TRANSIENT THERMAL IMPEDANCE [K/W]
D=0.5 D=0.5
0.2 0.2
0.1 0.1 0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse
0.01 0.01
i: 1 2 3 4 i: 1 2 3 4
ri[K/W]: 4.5E-3 0.1058 0.152 0.1827 ri[K/W]: 4.5E-3 0.1058 0.152 0.1827
i[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178 i[s]: 9.8E-6 3.2E-4 2.9E-3 0.01487178
0.001 0.001
1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp, PULSE WIDTH [s] tp, PULSE WIDTH [s]
Figure 19. IGBT transient thermal impedance Figure 20. Diode transient thermal impedance as a
(D=tp/T) function of pulse width
(D=tp/T)
11 Rev. 1.3, 2013-02-12

IHW30N110R3
60 2
Tj=25°C IC=15A
Tj=175°C IC=30A
IC=60A
50
VF, FORWARD VOLTAGE [V]

IF, FORWARD CURRENT [A]
40
30
20
10
0 1
0 1 2 25 50 75 100 125 150 175
VF, FORWARD VOLTAGE [V] Tj, JUNCTION TEMPERATURE [°C]
Figure 21. Typical diode forward current as a function Figure 22. Typical diode forward voltage as a function
of forward voltage of junction temperature
12 Rev. 1.3, 2013-02-12

IHW30N110R3
PG-TO247-3
13 Rev. 1.3, 2013-02-12

IHW30N110R3
ab
a b

14 Rev. 1.3, 2013-02-12

IHW30N110R3
Revision History
IHW30N110R3
Revision: 2013-02-12, Rev. 1.3

Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2009-12-01 -
1.2 2011-01-21 Package drawing Rev. 05
1.3 2013-02-12 Layout change
We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all ?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: erratum@infineon.com
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
15 Rev. 1.3, 2013-02-12


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Induction Heating Series

Reverse conducting IGBT with monolithic body diode

Industrial Power Control

Reverse conducting IGBT with monolithic body diode

• Powerful monolithic body diode with low forward voltage

Key Performance and Package Parameters

2 Rev. 1.3, 2013-02-12

3 Rev. 1.3, 2013-02-12

4 Rev. 1.3, 2013-02-12

Electrical Characteristic, at Tvj = 25°C, unless otherwise specified

Electrical Characteristic, at Tvj = 25°C, unless otherwise specified

Internal emitter inductance

Switching Characteristic, Inductive Load

5 Rev. 1.3, 2013-02-12

Switching Characteristic, Inductive Load

6 Rev. 1.3, 2013-02-12

IC, COLLECTOR CURRENT [A]

7 Rev. 1.3, 2013-02-12

IC, COLLECTOR CURRENT [A]

8 Rev. 1.3, 2013-02-12

t, SWITCHING TIMES [ns]

E, SWITCHING ENERGY LOSSES [mJ]

E, SWITCHING ENERGY LOSSES [mJ]

11 Rev. 1.3, 2013-02-12

VF, FORWARD VOLTAGE [V]

12 Rev. 1.3, 2013-02-12

13 Rev. 1.3, 2013-02-12

14 Rev. 1.3, 2013-02-12

Revision: 2013-02-12, Rev. 1.3

We Listen to Your Comments

15 Rev. 1.3, 2013-02-12

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