( 7 0Ω ) E

Darlington 2SB1659 B

Equivalent circuit C

Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Application : Audio, Series Regulator and General Purpose
■Absolute maximum ratings (Ta=25°C) ■Electrical Characteristics (Ta=25°C) External Dimensions MT-25(TO220)
Symbol 2SB1659 Unit Symbol Conditions 2SB1659 Unit
10.2±0.2 4.8±0.2

3.0±0.2
VCBO –110 V ICBO VCB=–110V –100max µA 2.0±0.1

VCEO –110 V IEBO VEB=–5V –100max µA

VEBO –5 V V(BR)CEO IC=–30mA –110min V

16.0±0.7
IC –6 A hFE VCE=–4V, IC=–5A 5000min∗

8.8±0.2
a ø3.75±0.2

IB –1 VCE(sat) IC=–5A, IB=–5mA –2.5max V b

A
PC 50(Tc=25°C) W VBE(sat) IC=–5A, IB=–5mA –3.0max V 1.35

4.0max
12.0min
Tj 150 °C fT VCE=–12V, IE=0.5A 100typ MHz
Tstg –55 to +150 °C COB VCB=–10V, f=1MHz 110typ pF 0.65 +0.2
-0.1

∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000)

2.5 2.5 1.4
■Typical Switching Characteristics (Common Emitter) B C E

VCC RL IC VBB1 VBB2 IB1 IB2 ton tstg tf Weight : Approx 2.0g
(V) (Ω) (A) (V) (V) (mA) (mA) (µs) (µs) (µs) a. Type No.
–30 6 –5 –10 5 –5 5 1.1typ 3.2typ 1.1typ b. Lot No.

I C – V CE Characteristics (Typical) V CE ( sa t ) – I B Characteristics (Typical) I C – V BE Temperature Characteristics (Typical)

A

A
m

5m (V CE =–4V)
–1

.
–6 –0 –3 –6
A
Collector-Emitter Saturation Voltage V C E (s at) (V)
A

.4m
–0 .3 m A
–5m

–0

–0. 2m A

Collector Current I C (A)

Collector Current I C (A)

–4 –2 –4
–5A

p)
I B =–0. 1mA I C =–3A

Tem

)
emp
mp)
se

eT e
–2 –1 –2

seT
(Ca

Cas
(Ca
˚C
125

˚C (
25˚C
–30
0 0 0
0 –2 –4 –6 –0.1 –0.5 –1 –5 –10 –50 –100 0 –1 –2 –3
Collector-Emitter Voltage V C E (V) Base Current I B (mA) Base-Emittor Voltage V B E (V)

h FE – I C Characteristics (Typical) h FE – I C Temperature Characteristics (Typical) θ j-a – t Characteristics

θ j- a ( ˚C/W)

(V C E =–4V) (V C E =–4V)
40000 5
50000
125˚C
Typ
D C Cur r ent Gai n h F E

25˚C
DC Cur rent Gain h FE

Transient Thermal Resistance

10000 10000
–30˚C
5000 5000

1000 1
1000
500
500
0.5
200 100 0.4
–0.02 –0.05 –0.1 –0.5 –1 –5 –6 –0.02 –0.05 –0.1 –0.5 –1 –5 –6 1 10 100 1000 2000

Collector Current I C (A) Collector Current I C (A) Time t(ms)

f T – I E Characteristics (Typical) Safe Operating Area (Single Pulse) P c – T a Derating

(V C E =–12V)
120 50
Maxim um Power Dissipation P C (W)

100 Typ
40
Cut-o ff F requ ency f T (M H Z )

W
ith

80
In
fin

30
ite
he

60
at
si
nk

20
40

10
20

Without Heatsink
2
0 0
0.02 0.05 0.1 0.5 1 5 6 0 25 50 75 100 125 150

Emitter Current I E (A) Ambient Temperature Ta(˚C)

57