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Vlsi Syll
Vlsi Syll
CO4 * * * * *
CO5 *
FUNDAMENTALSOFVLSIDESI
GN
CourseCode :
17EC54 Credi
ts 4
Hours/Week(
L-T-
P-S) :
4-0-
0 CIEMarks 50
TotalHour
s :
52(L) SEEMar ks 50
Exam Hours :
03 CourseType Core
PRE- REQUI SI
TES
Sat
isf
act
orycompl
eti
onofunderstandi ngofbasicsofsemi
conduct
ort
heor
yinphy
sics.
Sat
isf
act
oryknowl
edgeofAnal
ogEl ectronicCir
cui
ts.
Sat
isf
act
oryknowl
edgeofDi
git
al Electronics.
COURSEOUTCOMES
1.St
udentswil
lgai
nknowl
edgeonfabri
cat i
onpr ocessandissuesari
singoutofi
t.
2.St
udentswil
lbeabl
etoar
ti
cul
ateanddesi gnaVLSISub-system
3.St
udentswil
lbeabletoanal
yzeandi nter pr
etdif
fer
entdesi gnst
ylesofaVLSIdigit
al
ci
rcui
t
4.St
udentswil
lbeabl
edesi
gnVLSISubsy stem
5.St
udentswil
lgetacompl
eteover
viewofdesi gnofVLSIcircuit
sfr
om tr
ansist
orl
evelto
sy
stem l
evel
.
COURSECONTENTS
UNIT-1(11Hr s)
I
ntr
oducti
on: A bri
efhist
ory,MoSTr ansi
stors,CMOSl ogi
c,CMOSFabri
cat
ionandlay
out,
I
nvert
ercrosssecti
on,f
abri
cati
onprocess,layoutdesignrul
es,gat
elay
out
,VLSIDesi
gnflow.
Text1:1.
1,1.
3,1.
4,1.
5.1,1.
5.2,
1.5.3,
1.5.4
UNI
T-2(
11Hr
s)
MOSTr ansistorTheor y
Int
roduction,IdealI-V Character
ist
ics,C-
V char
acter
ist
ics,Non-
idealI
-V Ef
fect
s,DC t
ransf
er
characteri
stics
Text1:Ch2. 1,2.2,2.
3,2.
4,2.
5
UNIT-
3(10Hrs)
Cir
cuitChar acteri
zati
onandper formanceEsti
mati
on
PowerDi ssipation,I
nterconnect
Page6of6
CMOSLogi cSt r
uct ures:CMOSCompl ement ar yLogi c,BI CMOSLogi c,PseudoNMOSLOGI C,
Dy namicCMOS Logi c,Cl ockedCMOS Logi c,PassTr ansistorLogi c,CMOS Domi noLogi c,
CascadedVol tageSwi t
chLogi c.
Text1: 4.4,4.5
Text2:Ch5. 4. 1,5. 4.2,5.4.3,5. 4.4, 5.4.5, 5.
4.6, 5.4.7, 5.4.9
UNIT-4( 10Hr s)
Sequent i
alCi r
cui tDesi gn
Sequent i
alst atic ci rcuits,Conv ent ionalCMOS Lat ches,Conv ent i
onalCMOS Fl ip Fl
ops,
Reset t
ableLat chesandFl ipFlops, Enabl edLat chesandf li
pf lops
Text1: 7.2,7.3.1,7. 3.2,7.3.4,7.3.5
UNIT-5( 10Hr s)
CMOSSubsy st em Desi gn
Single-Bitadder s, Bi t
-Par all
eladder ,Bitser i
al adder s,car r
ysav eaddi ti
onandpi peli
ning,Carry-
LookaheadAdder s, Parit
yGener ator s,Compar ator s,Arr ayMul t
ipli
cation
Text2:8. 2.
1.1, 8.2. 1.2,8.2.1.3,8. 2.1.5, 8.2.2,
8.2. 3,8.2.7.1
TEXTBOOKS
1.Nei lHEWest e,Dav idHar ris,Ay anBaner j
ee,“ CMOSVLSIDesi gn”,Thir
dEdi ti
on,Pear son
Educati
on
2.Nei lH.E.West e and K.Eshr agian, ”Pr i
nci plesofCMOS VLSI Desi gn”,A Sy st
ems
Perspective,”Pear sonEducat ion( Asi a)Pv t.Lt d,2ndedi tion, 2000
REFERENCEBOOKS
1.M.K.Achut hanandK.N.Bhat ,“Fundament alsofSemi conduct orDev i
ces”,TataMcGr aw-
Hil
lPublishingCompanyLi mi ted, NewDel hi ,2007.
2.Sung- MoKang&YusufLebl ebi ci,“CMOSDi gitalIntegr atedCi rcuits:Anal
ysisandDesi gn”,
3rdEditi
on, Tat aMcGr aw- Hi l
l Publ i
shi ngCompanyLt d.,
NewDel hi,2007.
TEACHI
NGMETHODOLOGY
Bl ackboardt eachi
ng
Power Pointpresentati
ons( I
fneeded)
Regul arrev i
ewofst udentsbyaskingquest
ionsbasedont opi
cscoveredinthecl
ass
COURSEASSESSEMENTMETHOD
CIE:
1. Tut ori
als-10Mar ks
2. Sur pri
set ests-10Mar ks.
3. Thr eemi dexami nations,30Mar kseachwillbeconduct
edandt heAv er
ageofbestof
twowi l
lbet aken.
SEE:
TwoQuest ionsaretobesetf rom eachuni
t,carr
y i
ng20Markseach.
Student
shav etoanswer5quest i
onsselecti
ngonef ul
lquest
ionf
rom eachunit
CO-PO-PSOMAPPI NG
CO PO PO PO PO PO PO PO PO PO PO PO PO PSO PSO PSO
1 2 3 4 5 6 7 8 9 10 11 12 1 2 3
CO1 * * * * * *
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