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SHINDENGEN
VX-2 Series Power MOSFET N-Channel Enhancement type

2SK2564 OUTLINE DIMENSIONS

Case : FTO-220
(F8F60VX2) (Unit : mm)

600V 8A

FEATURES
Input capacitance (Ciss) is small.
Especially, input capacitance
at 0 biass is small.
The static Rds(on) is small.
The switching time is fast.
Avalanche resistance guaranteed.

APPLICATION
Switching power supply of
AC 100-200V input
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Power Factor Control Circuit

RATINGS
œAbsolute Maximum Ratings iTc = 25Žj
Item Symbol Conditions Ratings Unit
Storage Temperature T stg -55`150 Ž
Channel Temperature T ch 150
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS }30
Continuous Drain CurrentiDCj ID 8
Continuous Drain CurrentiPeak) I DP 24 A
Continuous Source CurrentiDCj IS 8
Total Power Dissipation PT 50 W
Single Pulse Avalanche Current I AS T ch = 25Ž 8 A
Dielectric Strength Vdis Terminals to case, AC 1 minute 2 kV
Mounting Torque TOR i Recommended torque : 0.3N¥m j 0.5 NEm

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VX-2 Series Power MOSFET 2SK2564 ( F8F60VX2 )

œElectrical Characteristics Tc = 25Ž

Item Symbol Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS I D = 1mA, VGS = 0V 600 V
Zero Gate Voltage Drain Current I DSS VDS = 600V, VGS = 0V 250 ÊA
Gate-Source Leakage Current I GSS VGS = }30V, VDS = 0V }0. 1
Forward Tran]conductance gfs I D = 4A, VDS = 10V 2. 4 5. 5 S
Static Drain-Source On-]tate Resistance RDS(ON) I D = 4A, VGS = 10V 0. 9 1. 2 ¶
Gate Threshold Voltage VTH I D = 1mA, VDS = 10V 2. 5 3. 0 3. 5 V
Source-Drain Diode Forwade Voltage VSD I S = 4A, VGS = 0V 1. 5
The\mal Resistance Æjc junction to case 2. 5 Ž/L
Total Gate Charge Qg VDD = 400V, VGS = 10V, I D = 8A 42 nC
Input Capacitance Ciss 1130
Reverse Transfer Capacitance Crss VDS = 10V, VGS = 0V, f = 1MHZ 85 pF
Output Capacitance C oss 245
Turn-On Time ton I D = 4A, RL = 37.5¶, VGS = 10V 55 80 ns
Turn-Off Time toff 195 290

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2SK2564 Transfer Characteristics

24
Tc = −55°C
25°C
20
Drain Current ID [A]

16
100°C

12 150°C

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4
VDS = 25V
pulse test
TYP
0
0 5 10 15 20

Gate-Source Voltage VGS [V]

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2SK2564 Static Drain-Source On-state Resistance

10
Static Drain-Source On-state Resistance RDS(ON) [Ω]

ID = 4A

1
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VGS = 10V
pulse test
TYP
0.1
-50 0 50 100 150
Case Temperature Tc [°C]

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2SK2564 Gate Threshold Voltage

6

5
Gate Threshold Voltage VTH [V]

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1
VDS = 10V
ID = 1mA
TYP
0
-50 0 50 100 150

Case Temperature Tc [°C]

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2SK2564 Safe Operating Area

100

10

100µs
Drain Current ID [A]

200µs

1 R DS(ON) 1ms
limit
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10ms

0.1
DC

Tc = 25°C
Single Pulse

0.01
1 10 100 1000
Drain-Source Voltage VDS [V]

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2SK2564 Transient Thermal Impedance
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10

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0.1

Transient Thermal Impedance θjc(t) [°C/W]

0.01
10-4 10-3 10-2 10-1 100 101 102

Time t [s]
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2SK2564 Single Avalanche Energy Derating

100
Single Avalanche Energy Derating [%]

80

60
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40

20

0
0 50 100 150
Starting Channel Temperature Tch [°C]

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2SK2564 Capacitance
10000

Ciss
Capacitance Ciss Coss Crss [pF]

1000

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Coss

100

Crss

f=1MHz
Tc=25°C
TYP
10
0 20 40 60 80 100

Drain-Source Voltage VDS [V]

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2SK2564 Single Avalanche Current - Inductive Load
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100
VDD = 90V
VGS = 15V → 0V
Rg = 25Ω

IAS = 8A
10

EAS = 290mJ
EAR = 29mJ

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1

Single Avalanche Current IAS [A]

0.1
0.1 1 10 100

Inductance L [mH]
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2SK2564 Power Derating

100

80
Power Derating [%]

60

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40

20

0
0 50 100 150
Case Temperature Tc [°C]

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2SK2564 Gate Charge Characteristics

500 20

VDS
400
Drain-Source Voltage VDS [V]

Gate-Source Voltage VGS [V]

15
VDD = 400V VGS
200V
300
100V

10

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200

5
100

ID = 8A
TYP
0 0
0 20 40 60 80 100

Gate Charge Qg [nC]

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