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NGTB25N120FL3WG IGBT - Ultra Field Stop: 25 A, 1200 V V 1.7 V E 0.7 MJ
NGTB25N120FL3WG IGBT - Ultra Field Stop: 25 A, 1200 V V 1.7 V E 0.7 MJ
Typical Applications
• Solar Inverter
• Uninterruptible Power Inverter Supplies (UPS) G
• Welding
E
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current IC A
@ TC = 25°C 50
@ TC = 100°C 25
G TO−247
Pulsed collector current, Tpulse limited ICM 100 A C
E CASE 340AL
by TJmax
ORDERING INFORMATION
Device Package Shipping
NGTB25N120FL3WG TO−247 30 Units / Rail
(Pb−Free)
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.43 °C/W
Thermal resistance junction−to−case, for Diode RqJC 0.78 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W
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NGTB25N120FL3WG
TYPICAL CHARACTERISTICS
100 100
TJ = 25°C VGE = 20 V − 13 V VGE = 20 V − 13 V
IC, COLLECTOR CURRENT (A)
10 V
40 10 V 40
9V
20 20
9V 8V
7V 8V 7V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics
100 100
VGE = TJ = −55°C VGE = 20 V − 13 V
IC, COLLECTOR CURRENT (A)
10 V
40 40
10 V
9V
20 20
9V 8V
7 V and 8 V 7V
0 0
0 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Output Characteristics
VCE, COLLECTOR−EMITTER VOLTAGE (V)
100 3.5
TJ = 25°C
IC, COLLECTOR CURRENT (A)
TJ = 175°C
80 3.0 IC = 50 A
60 2.5
IC = 25 A
40 2.0
IC = 10 A
20 1.5
0 1.0
0 2 4 6 8 10 12 14 16 −75 −50 −25 0 25 50 75 100 125 150 175 200
VGE, GATE−EMITTER VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Transfer Characteristics Figure 6. VCE(sat) vs. TJ
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NGTB25N120FL3WG
TYPICAL CHARACTERISTICS
10,000 100
Cies 90
70
1000 TJ = 25°C
60
50
40
100 Coes 30
20 TJ = 175°C
Cres
10 TJ = 25°C
10 0
0 10 20 30 40 50 60 70 80 90 100 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
Figure 7. Typical Capacitance Figure 8. Diode Forward Characteristics
16 1.7
VGE, GATE−EMITTER VOLTAGE (V)
VCE = 600 V
14 1.5 VGE = 15 V
IC = 25 A Eon
SWITCHING LOSS (mJ)
12 Rg = 10 W
1.3
10
1.1
8
Eoff
0.9
6
0 0.3
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 180 200
QG, GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Typical Gate Charge Figure 10. Switching Loss vs. Temperature
1000 6
VCE = 600 V
Eon
VGE = 15 V
5
TJ = 175°C
SWITCHING LOSS (mJ)
tf
SWITCHING TIME (ns)
Rg = 10 W
100 td(off) 4
Eoff
tr 3
td(on)
10 2
VCE = 600 V
VGE = 15 V
IC = 25 A 1
Rg = 10 W
1 0
0 20 40 60 80 100 120 140 160 180 200 10 20 30 40 50 60 70 80 90
TJ, JUNCTION TEMPERATURE (°C) IC, COLLECTOR CURRENT (A)
Figure 11. Switching Time vs. Temperature Figure 12. Switching Loss vs. IC
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TYPICAL CHARACTERISTICS
1000 6
VCE = 600 V
VGE = 15 V
tf 5 TJ = 175°C Eon
IC = 25 A
100 td(off) 4
tr
3
td(on)
10 2
VCE = 600 V
VGE = 15 V Eoff
TJ = 175°C 1
Rg = 10 W
1 0
10 20 30 40 50 60 70 80 90 0 10 20 30 40 50 60 70
IC, COLLECTOR CURRENT (A) RG, GATE RESISTOR (W)
Figure 13. Switching Time vs. IC Figure 14. Switching Loss vs. RG
1000 2.5
VCE = 600 V VGE = 15 V
VGE = 15 V TJ = 175°C
TJ = 175°C 2.0 Eon
SWITCHING LOSS (mJ)
IC = 25 A
SWITCHING TIME (ns)
td(off)
IC = 25 A Rg = 10 W
tf
1.5
tr
100 Eoff
td(on)
1.0
0.5
10 0
0 10 20 30 40 50 60 70 350 400 450 500 550 600 650 700 750 800
RG, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. RG Figure 16. Switching Loss vs. VCE
1000 1000
VGE = 15 V
TJ = 175°C
IC, COLLECTOR CURRENT (A)
IC = 25 A
SWITCHING TIME (ns)
Rg = 10 W 100
tf
td(off) dc operation
100 10
50 ms
Single Nonrepetitive 100 ms
1 Pulse TC = 25°C
tr Curves must be derated 1 ms
td(on) linearly with increase
in temperature
10 0.1
350 400 450 500 550 600 650 700 750 800 1 10 100 1K 10K
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Switching Time vs. VCE Figure 18. Safe Operating Area
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NGTB25N120FL3WG
TYPICAL CHARACTERISTICS
1000 300
250
TJ = 175°C, IF = 25 A
100 200
150
10 100
TJ = 25°C, IF = 25 A
50
VGE = 15 V, TC = 175°C
1 0
1 10 100 1K 10K 100 300 500 700 900 1100
VCE, COLLECTOR−EMITTER VOLTAGE (V) diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 19. Reverse Bias Safe Operating Area Figure 20. trr vs. diF/dt
Qrr, REVERSE RECOVERY CHARGE (mC)
1.0 20
TJ = 25°C, IF = 25 A
TJ = 25°C, IF = 25 A
0.5 10
VR = 400 V
0 0
100 300 500 700 900 1100 100 300 500 700 900 1100
diF/dt, DIODE CURRENT SLOPE (A/ms) diF/dt, DIODE CURRENT SLOPE (A/ms)
Figure 21. Qrr vs. diF/dt Figure 22. Irm vs. diF/dt
4.5
4.0 IC = 50 A
VF, FORWARD VOLTAGE (V)
3.5
3.0 IC = 25 A
2.5
IC = 10 A
2.0
1.5
1.0
−75 −50 −25 0 25 50 75 100 125 150 175 200
TJ, JUNCTION TEMPERATURE (°C)
Figure 23. VF vs. TJ
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NGTB25N120FL3WG
TYPICAL CHARACTERISTICS
120
Ramp, TC = 110°C
100
Ramp, TC = 80°C
80 Square, TC = 110°C
Ipk (A)
60
Square, TC = 80°C
40
VCE = 600 V,
20 RG = 10 W,
VGE = 15 V
0
0.01 0.1 1 10 100 1000
FREQUENCY (kHz)
Figure 24. Collector Current vs. Switching Frequency
1
RqJC = 0.43
R(t), SQUARE−WAVE PEAK (°C/W)
0.1 20%
10%
5% Ri (°C/W) Ci (J/W)
2% Junction R1 R2 Rn Case 0.0096 0.0105
0.01 0.1168 0.0027
0.0275 0.0363
0.1537 0.0206
0.1167 0.0857
0.001 C1 C2 Cn 0.0095 3.3131
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NGTB25N120FL3WG
PACKAGE DIMENSIONS
TO−247
CASE 340AL
ISSUE B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
SEATING 3. SLOT REQUIRED, NOTCH MAY BE ROUNDED.
NOTE 4 A B PLANE
0.635 M B A M
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH.
E P NOTE 6 MOLD FLASH SHALL NOT EXCEED 0.13 PER SIDE. THESE
A DIMENSIONS ARE MEASURED AT THE OUTERMOST
E2/2 EXTREME OF THE PLASTIC BODY.
5. LEAD FINISH IS UNCONTROLLED IN THE REGION DEFINED BY
Q S L1.
E2 6. ∅P SHALL HAVE A MAXIMUM DRAFT ANGLE OF 1.5° TO THE
NOTE 4 TOP OF THE PART WITH A MAXIMUM DIAMETER OF 3.91.
D 7. DIMENSION A1 TO BE MEASURED IN THE REGION DEFINED
NOTE 3 BY L1.
4
MILLIMETERS
1 2 3 DIM MIN MAX
A 4.70 5.30
L1 A1 2.20 2.60
b 1.00 1.40
b2 1.65 2.35
L NOTE 5 b4 2.60 3.40
c 0.40 0.80
D 20.80 21.34
E 15.50 16.25
E2 4.32 5.49
2X b2 c e 5.45 BSC
L 19.80 20.80
b4 A1 L1 3.81 4.32
3X b NOTE 7 P 3.55 3.65
0.25 M B A M Q 5.40 6.20
e S 6.15 BSC
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