MRF314

NPN SILICON RF POWER TRANSISTOR

DESCRIPTION:
The MRF314 is Designed for Class C PACKAGE STYLE .380 4L FLG
Power Amplifier Applications up to 200
MHz.

FEATURES:
• PG = 10 dB min. at 30 W/ 150 MHz
• Withstands 30:1 Load VSWR
• Omnigold™ Metalization System

MAXIMUM RATINGS
IC 3.4 A
VCBO 65 V
VCEO 35 V
VEBO 4.0 V
PDISS 82 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 2.13 °C/W ORDER CODE: ASI10872

CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 30 mA 35 V
BVCES IC = 30 mA 65 V
BVEBO IE = 3.0 mA 4.0 V
ICBO VE = 30 V 3.0 mA
hFE VCE = 5.0 V IC = 1.5 A 20 80 ---

COB VCB = 30 V f = 1.0 MHz 30 40 pF

PG 10 13.5 dB
ηC VCC = 28 V POUT = 30 W f = 150 MHz 50 %
ψ 30:1 all phase angles, no degadation in output.

A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1

Specifications are subject to change without notice.