SEMICONDUCTOR MBRF20U200CTA

TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE

SWITCHING MODE POWER SUPPLY APPLICATION.

CONVERTER & CHOPPER APPLICATION.
A C

F
FEATURES

O
・Average Output Rectified Current E DIM MILLIMETERS

B
: IO=20A. A _ 0.2
10.16 +

G
B _ 0.2
15.87 +
・Repetitive Peak Reverse Voltage C 2.54 +_ 0.2
: VRRM=200V. D _ 0.1
0.8 +
E _ 0.1
3.18 +
・Fast Reverse Recovery Time : trr=35ns. _ 0.1

K
F 3.3 +
G _ 0.2
12.57 +
L M
R H _ 0.1
0.5 +
_ 0.5

J
J 13.0 +
K _ 0.1
3.23 +
D
L 1.47 MAX
M 1.47 MAX
N N H
MAXIMUM RATING (Ta=25℃) N _ 0.2
2.54 +
O _ 0.2
6.68 +
CHARACTERISTIC SYMBOL RATING UNIT Q _ 0.2
4.7 +
1. ANODE R _ 0.2
2.76 +
VRRM 1 2 3

Q
Repetitive Peak Reverse Voltage 200 V 2. CATHODE
3. ANODE
Average Output Rectified
IO 20 A
Current (Note)
Peak One Cycle Surge Forward TO-220IS (1)
IFSM 120 A
Current (Non-Repetitive 60Hz)
Junction Temperature Tj -40～150 ℃
Storage Temperature Range Tstg -55～150 ℃ 2
Note : average forward current of centertap full wave connection.

1 3

ELECTRICAL CHARACTERISTICS (Ta=25℃)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Peak Forward Voltage (Note) VFM IFM=10A - - 0.95 V
Repetitive Peak
IRRM VRRM=Rated - - 50 ㎂
Reverse Current (Note)
Reverse Recovery Time (Note) trr IF=1.0A, di/dt=-30A/㎲ - - 35 ns
Thermal Resistance (Note) Rth(j-c) Juction to Case - - 3.5 ℃/W
Note : A value of one cell

2010. 9. 28 Revision No : 0 1/2

 MBRF20U200CTA

IF - V F IR - V R

30 100

REVERSE CURRENT IR (µA)

FORWARD CURRENT IF (A)

10
10

5.0
1.0 T j =25 C
3.0
Tj =25 C

0.1
1.0

0.5 0.01
0 0.2 0.4 0.6 0.8 1.0 0 20 40 60 80 100 120 140 160 180 200

FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V)

2010. 9. 28 Revision No : 0 2/2