FERROELECTRIC RAM

[FRAM]

Submitted by :
NIDHIN.O
ROLL NO : 44
 CONTENTS

 Introduction
 Features
 Basic Memory Cell Structure
 Ferro Electric Crystal
 FRAM Technology
 FRAM Write Operation
 Advantages
 Disadvantages
 Future Applications
 Conclusion
 References

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 INTRODUCTION

●
Ferroelectric RAM is a random-access memory
similar in construction to DRAM
●
It uses a ferroelectric layer instead of a dielectric
layer to achieve non-volatility.
●
FeRAM is one of a growing number of alternative
non-volatile random-access memory technologies that
offer the same functionality as flash memory.

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 FEATURES

A ferroelectric memory cell consists of a

ferroelectric capacitor and a MOS transistor
The most well-known ferroelectric substance
is BaTiO3.
Data is read by applying an electric field to
the capacitor
The memory is non-volatile
FRAM allows systems to retain information
even when power is lost

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 FERRO ELECTRIC CRYSTAL

Ferroelectric CrystaI: The center atom moves to store ones and zeros
Consist of 8 atom of lead at corners
6 atom of oxygen at face centers
1 atom of titanium at cube centers 5
 FRAM TECHONOLOGY

• When an electric field is applied to a ferroelectric crystal, the central

atom moves in the direction of the field.

• As the atom moves within the crystal, it passes through an energy

barrier,causing a charge spike.

 Internal circuits sense the charge spike and set the memory. If the
electric field is removed from the crystal, the central atom stays in
position, preserving the state of the memory.

 This makes FRAM non-volatile, without any periodic refresh

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 BASIC MEMORY
CELL STRUCTURE

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 Word line

Bit line
Ferroelectric
capacitor

Gnd
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 FRAM READ OPERATION
 An electric field is applied.

 If the atoms are near the cube "floors" and the

electric field pushes them to the top, the cell
gives off a current pulse.

 This pulse, representing a stored 1 or 0, is

detected by a sense amplifier. If the atoms are
already near their cubes' "ceilings," they don't
budge when the field is applied and the cell
gives off a smaller pulse.

 Reading an FRAM cell destroys the data

stored in its capacitor. So after the bit is read,
the sense amplifier writes the data back into
the cell, just as in a DRAM. 9
 FRAM WRITE OPERATION

To write a "1" into the memory cell,

 The BL is raised to Vdd-

Then the WL is raised to Vdd + Vt.
This allows a full Vdd to appear across the ferroelectric capacitor

At this time the state of ferroelectric is independent of its initial
state.Next, the PL is pulsed, WL stays activated until the PL is
pulled down completely and the BL is driven back to zero.
The final state of the capacitor is a negative charge state S1.

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 To write a "0" into the cell

 the BL is driven to 0V prior to activating the

WL.
 The rest of the operation is similar to that of
writing a "1“

The written data is held in the cell even though

the selection of the wordline is changed to non
selected state (i.e. transistor is OFF), so it is
nonvolatile.

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 FRAM AS RAM & ROM

FRAM memory fills the RAM and ROM performance gap

 The key advantage to FRAM over DRAM is what happens between the read and
write cycles. In DRAM, every cell must be periodically read and then re-written, a
process known as refresh..

 In contrast, FRAM only requires power when actually reading or writing a cell. The
vast majority of power used in DRAM is used for refresh power usage about 99%
lower than DRAM. 12
RAMTRON-FRAM

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 COMPARISON

FRAM EEPROM Flash Memory DRAM SRAM

Memory Type Non-volatile Non-volatile Non-volatile Volatile Volatile

Read Cycle 100ns 200ns 120ns 70ns 85 ns .

Write Cycle 100ns 10ns 100ns 70ns 85ns
Power Consumption 1nJ lnJ 2nJ 4nJ 3nJ.

Current to retain Unnecessary Unnecessary Unnecessary' Necessary Necessary

Data

Internal Write 2V-5V 14V 9V 3.3V 3.3V

Voltage

Cell Structure 1T-1C • 2T IT 1T-1C 6T,4T+R

Area/Cell 4 3 1 2 4 -

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 ADVANTAGES

Speed and high capacity: FRAM memories can be written as fast as

they can be read.The high-speed access and low power consumption allow
the design of high-capacity RFID chips suitable for data logging.

Almost unlimited read-write times: With read-write endurance of 1012

cycles, FRAM is more durable and suitable for applications that require
frequent rewriting.

Gamma radiation hardness: Unlike EEPROM, FRAM does not lose its
content due to radiation exposure.

It is less expensive than magnetic memories.

Non volatile

Low power consumption

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 DISADVANTAGES

Present high cost

Low density compared to DRAM & SRAM

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 FUTURE OF FRAM

Increased memory capacity

High density to operate under very high temperature
Combine FRAM with other logical technologies to offer more enhanced
devices

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 APPLICATIONS

Personal digital assistants (PDAs)

Handheld phones

Power meters

Smart card, and in security systems

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 TARGET APPLICATIONS

Logistic-tracking systems
Data-logging devices
Wireless tracking
Environmental monitoring control

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 FRAM MEMORY PRODUCTS

DATA COLLECTION AND LOGGING

CONFIGURATION STORAGE
NON VOLATILE BUFFER
SRAM REPLACEMENT

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 CONCLUSION
 Ferroelectric memories are superior to EPROM’s & Flash
memories in terms of write access time & overall power
consumption.Two eg: of such applications are contactless
smart cards & digital cameras.
Future personal wireless connectivity applications that are
battery driven will demand large amounts of non volatile
storage to retain accessed internet webpages, contain
compressed video, voice and data.

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 REFERENCE

●
https://en.wikipedia.org/wiki/Fram
●
https://www.fujitsu.com/cn/en/products/devices/
semiconductor/fsp/memory/fram/overview/
●
R. Womack, "A 16kb ferroelectric nonvolatile
memory with a bit parallel architecture"

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