ACKNOWLEDGEMENT In the accomplishment of this project successfully, many people have best owned upon me their blessings and the heart pledged support, this time I am utilizing to thank all the people who have been concerned with project. Primarily I would thank god for being able to complete this project with success. Then I would like to thank my principal Mr. James MJ and physics teacher Mrs Ratna hajela, whose valuable guidance has been the ones that helped me patch this project and make it full proof success her suggestions and her instructions has served as the major contributor towards the completion of the project. Then I would like to thank my parents and friends who have helped me with their valuable suggestions and guidance has been helpful in various phases of the completion of the project. Last but not the least I would like to thank my classmates who have helped me a lot.ACKNOWLEDGEMENT In the accomplishment of this project successfully, many people have best owned upon me their blessings and the heart pledged support, this time I am utilizing to thank all the people who have been concerned with project. Primarily I would thank god for being able to complete this project with success. Then I would like to thank my principal Mr. James MJ and physics teacher Mrs Ratna hajela, whose valuable guidance has been the ones that helped me patch this project and make it full proof success her suggestions and her instructions has served as the major contributor towards the completion of the project. Then I would like to thank my parents and friends who have helped me with their valuable suggestions and guidance has been helpful in various phases of the completion of the project. Last but not the least I would like to thank my classmates who have helped me a lot.CERTIFICATE This is to certify that project work titled A STUDY ON PN JUNCTIONS AND DIODES being submitted by Govind Patel a student of class XII-A has successfully completed the research on the below mentioned project under the guidance of Mrs Ratna Hajela ( Subject Teacher ) during the year 2016-17 in partial fulfillment of physics practical examination conducted by AISSCE Signature of external Signature of examiner physics teacherINDEX ¢« PN Junction * Diode Equation * Zener DiodesSemiconductor: *7 | Introduction Be * Conductors: Allow Electric current to flow through them * Insulators: Do not Allow Electric current to flow through them * Semiconductors: Materials whose conductivity lies in between, , Conductors and Semiconduc OPEN CIRCUITInsulators, Semiconductors, and Metals: Comparison oThi Ss separation of u c valence conductjon ban etermines elec trical roperties of the material oO pension have a large energy a ® electro mp from valence to Gonduchor Age p v ® no current flows OConductor metals). have,a ver small or nonexistent) oe lectyons Ss Feil ‘ump to conduction "6 odne to em, ip coneud * current flows easily OSe iconductors have a moderate energy ga ° only.a few electrons can jump to the Oleaving “holes” * only a little current can flowP-N JUNCTION o Also known as a diode o One of the basics of semiconductor technology - o Created by placing n-type and p- type material in close contact © Diffusion - mobile charges (holes) in p-type combine with mobile charges (electrons) in n-typeP-N JUNCTION o Region of charges left behind (dopants fixed in crystal lattice) Group III in p-type (one less proton than Si- negative charge) Group IV in n-type (one more proton than Si - positive charge) o Region is totally depleted of mobile charges - “depletion region” Electric field forms due to fixed charges in the depletion region Depletion region has high resistance due to lack of mobile chargesTHE P-N JUNCTION Direction of Current Physical Structure Circuit Symbol Ip OF YD Physical Model iTDEPLETION LAYER FORMATION 00000 DO0K0O ed itsome Depletion Region 000 Keo The “potential” or voltage across the silicon changes in the depletion region and goes from + in the n region to — in the p region +e ett tDIODES CAN BE Biasing the P-N — COSSIDFREDAS Diode NoBias Reverse Bias a te Lr UIT | a at: , kite Arte Forward Bias Forward Reverse Bias ae Applies + Applies - voltage to n voltage to the region and — n region and voltage to p + voltage to Naito region the p region NO CURRENT! ‘aid ker CURRENTP-N Junction — Reverse Bias Opositive voltage placed on n-type material Oelectrons in n-type move closer to positive terminal, holes in p-type move closer to negative terminal Owidth of depletion region increases Oallowed current is essentially zero (small “drift” current) Depletion layer widtl Increses . a No current FlowP-N Junction — Forward Bias Opositive voltage placed on p-type material Oholes in p-type move away from positive terminal, electrons in n-type move further from negative terminal Odepletion region becomes smaller - resistance of device decreases Ovoltage increased until critical voltage is reached, depletion region disappears, current can flow freelyP-N Junction - V-! characteristics Voltage-Current relationship for a p-n junction (diode) [= iB - 1) J = Current through diade in Amps 1), = The diodes ‘Saturation Current value e= electron charg, | 02 x 10°C T= temperature in degrees Kevin V = Applied valage in Volts i= Bolamann!s constant, 1380 x 103 Jk Diode Voltage —>Current-Voltage Characteristics IV Characteristics V i 'p THE IDEAL DIODE Positive voltage yields finite current Negative voltage yields zero current REAL DIODE