(CMOS DIGITAL INTEGRATED CIRCUIT
ace 2
TENTATIVE
TC7AHCOOP QUAD 2-INPUT NANO GATE
The TC74HCOO is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2Mos
technology
It achieves the high speed operation similar to equivalent LSTTL while maintaining the
(CMOS Low powcr dissipation.
The Internal circuit is composed of 3 stages including buffer output, which enables
high avise immunity and stable output
ALL inputs are equipped with protection circuits against static discharge or transient
excess voltage.
FEATURES:
+ High Speed... stpa=8ns(Typ.) at Ve
-Tec=1#a(Max.) at Ta=25°C]
Low Rover Dissipation.
High Noise Tmounity.......+++-VwrHPYNLL=28% Yoo (tin.
10 UStLL. Loads
imA(MLN.)
Output Drive Capability.
Symmetrical Output Impedance. .| Lou!=1oi
+ Balanced Propagation Delays..-tpyfitpHt
Wide ope Voc (opr)=2¥~ 6¥
«Pin and F 0
rating Voltage Range:
nection Compatible with 74
CIRCUIT SCHEMATIC (PER GATE) _ PIN ASSIGNMENT
TW f Ay
ew oft °
_ af h9Gd
LU axp of ls sy
A
(ror view)
Paty
(eTC74HCOOP
ABSOLUTE MAXIMUM RATINGS
PARAMETER ‘SYMBOL VALUE UNIT] + 500k in the cange oF
yo] Tas-4ore~ 05°C.
Supply Voltage Range 0.5~7 v parc
DG Input Voltage -0.5~Vect.5 v 85°C derating factor
TT] af -1008/%¢ shall be
[=0:2~WeotO-5 | ON | apptied until 300nW.
#20 ah
De Output Voltage:
Input Diode Current
20 mA
i Output Current
round Current
Power Dissipation
Storage Temperature ~=65~ 150
lead Teaperature T0seo 300
RECOMMENDED OPERATING CONDITIONS
Parr sam [uaa
Supply Voltage Voc
[Input Woroge is
Voltage
Teput Rise and Pall Time
OC ELECTRICAL CHARACTERISTICS
parameres |svpo..| TEST coNDLTLON
High-Level
Tnput Voltage | VT
Low-heved
vn.
Input Voltage
sof - | -
1.9] 2.0 °3
4a] as 4
HigheLevel vu 5.9 6.0 9
Yor o
ourpue Voltage Vin or Vi | =
: . a 4.18] 3 a3
5.68] 5.80} - | 5.63] -
18TC74HCOOP
DC ELECTRICAL CHARACTERISTICS
Tax25°C 40~85°C
p z SST CONDITION ' " 40-850 Cl unr
vanaMereR |svmpou| —TesT ot Teo fins Ta [wa] ww rae
2.0 oof oa, - | oF
orr20ne 4s | = | 0.0] oa] - | on
Low-Level
peeved age | Vou. |¥ueVin so | - [oo] orf = | or] v
as [> [a7] oa2] - [0.37
6.0 | - [oss}o.s2| - | 0.37
Tana Team oo} - | - {tol - [#10
current a} oS eee
Quiescent 5
Sueisioce a ||nice co oF GND oo] - | -[ 10] ~ {10.0
AC ELECTRICAL CHARACTERISTICS (Cy*50pF, Input_tr=t¢-6ns)
Tanase =
PARAMETER svMBoL [TEST CONDITION — uxt
Yoo | MIN. Pave. [ wax. MAK.
270 |e (a2) 7s) | co
Output Transicton as] -] 8} as} = | as}
Time eo ole os
z0 | - | 3] sof — | no
Propagation Delay 45] - | lo} is} - | 22
Tine eo} el ool oe
Input Capacitance — se
: Sy
Power Dissipation 5 -|-1-1%
Capacitance Geo) aol aa
Note (1) Cpp is defined as the value of Internal equivalent capacitance of TC which
is calculated from the operating current constmption without load (refer to
Test Cirevit).
Average operating current can be obtained by the equation hereunder.
Tec(opr)*Cen:VecfIntTec/4 (per Gace)
SWITCHING CHARACTERISTICS TEST CIRCUIT Tec(opr) TEST CIRCUIT
Spit 1a
9TC74HCOOP
Lg CHARACTERISTICS Toy CHARACTERISTICS
MIQN LaveL OUTPUT VOLTAGE FoR Vo
ee ee eee ee
cam a= 200 (ty)
e5e (mt)
“lon UA)
i
:
:
zi
£
ss
OW GAVEL OUTHUT VOLTAGE Yor, CF)
8
HIGH LEVEL OUTPUT CURRENT
eye)
Vyn-Vour CHARACTERISTICS (MIN., MAX.) Vpn-Vout CHARACTERISTICS —(TYP.)
o
OUTPUT VOUTAGE Vous ¢
outer vourao® our (?
INPUT VoUPAvE Say 0
INPUT VOLTROR Vin)
Crip trm-¥oo CHARACTERISTICS (TYP-) putts Epuun-Vec CHARACTERISTICS (TYP)
en sou
tran (ae?
oureur Taayorsron TME
PROFAOATION DRIAY 7M
rr
GUEPLY YoUTAAE Yoo (1
SUPPLY VOLTADR Yoo ()TC74HCOOP
typustTHL-CL CHARACTERISTICS (T¥P.) EpLnstpHLcL CHARACTERISTICS (TYP.)
ap Mooney Ld E
a
OvtpuT TRANSITION TIME
PROPAGATION DELAY TIME
capacitance cy, CED
Tor
TOAD CATACITARCH Cy, (OED
al