This document contains a question bank for the unit introduction to RF systems in the electronics and communication engineering course at Siddharth Institute of Engineering & Technology. It includes 10 long answer questions worth between 5-10 marks each about topics like RF system architectures, reflections in transmission media, RLC networks, matching, and interconnects. It also contains 30 short answer and multiple choice questions worth 2 marks each testing knowledge of key RF concepts like the roles of different circuit elements, resonance conditions, and matching techniques.
This document contains a question bank for the unit introduction to RF systems in the electronics and communication engineering course at Siddharth Institute of Engineering & Technology. It includes 10 long answer questions worth between 5-10 marks each about topics like RF system architectures, reflections in transmission media, RLC networks, matching, and interconnects. It also contains 30 short answer and multiple choice questions worth 2 marks each testing knowledge of key RF concepts like the roles of different circuit elements, resonance conditions, and matching techniques.
This document contains a question bank for the unit introduction to RF systems in the electronics and communication engineering course at Siddharth Institute of Engineering & Technology. It includes 10 long answer questions worth between 5-10 marks each about topics like RF system architectures, reflections in transmission media, RLC networks, matching, and interconnects. It also contains 30 short answer and multiple choice questions worth 2 marks each testing knowledge of key RF concepts like the roles of different circuit elements, resonance conditions, and matching techniques.
SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR
ELECTRONICS & COMMUNICATON ENGINEERING
RADIO FREQUECY INTEGRATED CIRCUITS (RFIC) QUESTION BANK UNIT -1: INTRODUCTION RF SYSTEMS Essay type Questions 1. A) Give the importance of RF System in Communications and write in detail. [CO1 [L1] [8M] B) Give the importance of LNA in RF system? [CO1] [L1][2M] 2. Discuss the basic Architectures of the RF System in detail. [CO1] [L2][10M] 3. Interpret he reflections in transmission medium of RF System. [CO1] [L3][10M] 4. A) The maximum power transfer in networks is deciding the distribution of power to other networks give the details on it. [CO1] [L3][5M] B) State and prove the Maximum power is transfer theorem. [CO1] [L3][5M] 5. A) Write about RLC Networks with network examples [CO1] [L2][5M] B) Derive quality factor for parallel RLC network. [CO1] [L4][5M] 6. A) Discuss the importance of matching in RF Systems. [CO1] [L2][5M] B) Discuss how three degree of freedom is achieved in π –match. [CO1] [L4][5M] 7. Prove that three degree of freedom is achieved using T-match. [CO1] [L4][10M] 8. Draw and explain in detail about IC interconnects of capacitors. [CO1] [L5][10M] 9. Write about interconnects of resistors [CO1] [L2][10M] 10. A) What are the conditions for resonance in parallel RLC network. [CO1] [L2][2M] B) What is skin effect. [CO1] [L2][2M] C) Write the importance of matching. [CO1] [L2][2M] D) Define 'Q' in RF SYSTEMS. [CO1] [L1][2M] E) Write advantages of π –match over L-match. [CO1] [L2][2M]
Two Marks Questions
1) What is RF System? [CO1] [L1][2M] 2) What are the shapes are there to design RF System? [CO1] [L2][2M] 3) What is the role of RF amplifier in receivers? [CO1] [L2][2M] 4) Give the examples of RF design circuits. [CO1] [L2][2M] 5) Passive IC components having interconnections of capacitors give that cases of interconnection of capacitors [CO1] [L2][2M] 6) Explain the Hallow shape interconnection of Inductors [CO1] [L2][2M] 7) Why need Quality factor ‘Q’ in RF system? [CO1] [L2][2M] 8) Discuss the Series RLC network with circuit. [CO1] [L2][2M] 9) Get the idea of Parallel RLC network in RF circuits [CO1] [L2][2M] 10) What is matching in networks? [CO1] [L2][2M] 11) What is the importance of Maximum power transfer theorem in network? [CO1] [L2][2M] 12) What is the importance of reflection coefficient (Γ)? [CO1] [L3][2M] 13) In super heterodyne receiver what is the function of RF amplifier [CO1] [L2][2M] 14) What are the types of Resistors in interconnections? [CO1] [L2][2M] 15) Define skin depth in RF Systems [CO1] [L1][2M] 16) Write short notes on π- matching networks [CO1] [L2][2M] 17) Write short notes on T- matching networks [CO1] [L2][2M] 18) What is Square spiral inductor explain it? [CO1] [L2][2M] 19) What is Hallow spiral inductor explain it? [CO1] [L2][2M] 20) Mention the advantages of RF Systems [CO1] [L3][2M] Objective type Questions
1. In the following which is not discipline to design RF Circuit. [ ]
a) Random signals b) CAD Tools c) Time constant d) Microwave theory. 2. In simple RF Communications Which amplifier are used [ ] a) Single tuned amplifier b) stagger tuned amplifier c) Multistage amplifier d) Power amplifier 3) To design RF Circuit which is the shape is used [ ] a) Pentagon b) Hexagon c)triangle d) Rectangle 4) What is the value of Centre frequency in Generic RF transceiver [ ] a) fc = 3.4 GHz b) 2 GHz c) 2.4 GHz d) 1.4 GHz 5) In parallel RLC tank circuit the quality factor can be find as [ ] a) Q = ω (Energy stored)/ (Power dissipated) b) Q = (Energy stored)/(Average Power dissipated) c) Q = ω (Energy stored)/ (Average Power dissipated) d) Q = ω(Energy stored )/(Power dissipated) 6) The average power can be found as [ ] a) Pavg = I2PK R b) Pavg = 1/2 ( I2PK R2 ) c) Pavg = 1/2 ( I PK R2 ) d) Pavg = 1/2 ( I2PK R ) 7) Characteristic impedance of the parallel RLC network [ ] a) Z0= L/C b) Z0 = √ (L/C) c) Z0 = √ ( LC ) d) Z0 = ( LC ) 8) The total energy stored in a parallel RLC network [ ] a) Etotal = 1/2 C ( I PK R ) b) Etotal = 1/2 ( I PK R )2 c) Etotal = 1/2 C ( I PK R )2 d)Etotal = 1/2 C ( I PK ) 2 9) What is the quality factor for RLC parallel network? [ ] a) Q = ω0RC b) Q = ω0 / RC c) Q = ω0C d) Q = ω0R 10) Maximum power transferred to load, if [ ] a) ZL = Z0 b) ZL > Z0 c) ZL < Z0 d) ZL >>Z0 11) In parallel RLC network what is ‘Q’ [ ] a) Q = ω0 LS / Rs b) Q = LS / Rs c) Q = RS / Ls d) Q = ω0 RS / Ls 12)In parallel RLC network what is LP [ ] a) LP = (Q2 +1) / Q2 b) LP= LS [(Q2 +1) / Q2] c) LP = LS [(Q2 +1) / Q ] d) LP = LS (Q2 +1) 13) In parallel RLC network what is RP [ ] a) RP = (Q2 +1 ) b) RP = RS (Q +1 ) c) RP = RS (Q2 +1 ) d) RP = RS 14) In parallel RLC network what is CP [ ] a) CP = Cs( (Q ) / (Q2 +1 )) b) CP = Cs ( (Q2 ) / (Q +1 )) c) CP = ( (Q2 ) / (Q2 +1 ) ) d) CP = Cs ( (Q2 ) / (Q2 +1 ) ) 15) In L- matching circuits what is the value of RP [ ] a) RP = LS / C b) RP = ( 1/Rs ) (LS / C) c) RP = ( 1/Rs ) ( C/ LS) d) RP = ( C/ LS) 16) In L- matching circuits what is the value of ‘Q’ [ ] a) Q = RP / Rs b) Q = Rs / Rp c) Q = √ (Rs / Rp ) d)Q = √ (Rp / Rs ) 17) The LNA adds _______ noise by its own. [ ] a) high b) low c) both d) none 18) Frequency synthesizer synchronizes to ________ [ ] a) local clock b) small clock c) global clock d)none 19) Parallel RLC network is know as __________ [ ] a) tank circuit b) filter circuit c) quality circuit d)none 20) The resistance increases owing to a phenomenon known as _____ effect [ ] a) Active b) proximity c) skin d)none 21) Another name for RFIC is________ [ ] a) circuit for cellphone b) Cmos c)Ic d)none 22) The quantity √L/C has the dimensions of resistance is called______ [ ] a) Characteristic impedance b) Input impedance c) Output impedance d) none 23) The peak energy stored in either the capacitor or inductor is [ ] a) high b) low c) equal d) none 24) At resonance , the voltage across the network is ______ [ ] a) IinR b)RI2 c)IRV d) none 25) The quality factor for series RLC network is ______ [ ] a) Q=(√L/C)/R b) Q=(√C/L)/R c) Q=(√C/L)/RC d) none 26) The π-match results from cascading two _______ sections [ ] a) LC b) T c) L d) none 27) The T-match is particularly useful when the source and termination parasitics are Primarily ____________ in nature [ ] a) Capacitive b) inductive c) both d) none 28) The total capacitance per unit area can be increased by using more than one pair of___ [ ] a) Interconnect layers b) connect layers c) both d) none 29) The most widely used on-chip inductor is____ [ ] a) linear planar b) circular planar c) spiral planar d) none 30) The inductance of an ______ spiral is a complicated function of geometry [ ] a) planar b) arbitrary c) circular d) none 31) Maximizing the distance to the substrate minimizes the _____ capacitance between the Inductor and the substrate [ ] a) Early b) parallel c) parasitic d)none 32) The _____resistive losses are exacerbated by the skin effect [ ] a) DC b) AC c) both d) none 33) The consequence is a reduction in the effective cross- section ,increasing the ___ resistance [ ] a) parallel b) series c) both d) none 34)______ computations based on this modified skin depth formula [ ] a) Capacitance b) Inductance c) Resistance d) none 35) In addition to the _____ resistive loss, capacitance to the substrate is another conspicuous Problem of on –chip spirals [ ] a) Series b) parallel c) both d) none 36) A case of interest is the ______of a single loop of wire [ ] a) Resistance b) Capacitance c) Inductance d) none 37) If a series RLC network with a Q of _____ is driven at resonance with a one-volt source [ ] a) 10 b) 100 c) 1000 d) none 38) The rule of thumb is extremely useful for rapidly estimating Q from experimental ____ data [ ] a) Impulse b) step c) both d) none 39) _____ match is universal equation [ ] a) L b) T c) π d) none 40) In L-match ,Q is fixed at a value roughly equal to the square root of the ____ ratio [ ] a) Capacitance b) Resistance c) Transformation d) none SIDDHARTH INSTITUTE OF ENGINEERING &TECHNOLOGY:: PUTTUR ELECTRONICS & COMMUNICATON ENGINEERING RADIO FREQUECY INTEGRATED CIRCUITS (RFIC) UNIT -2: A REVIEW OF MOS DEVICE PHYSICS
Essay type Questions
1. a. Give the advantages of MOS Technology. [L2] [CO.2] [2M] b. For N-Channel MOSFET, prove that drain current in linear region linearly changes with Vds . [L4][CO.3][8M] 2. Derive the drain current in pentode region for N-Channel MOSFET. [L4][CO.3][8M] 3. a. Derive the characteristic impedance of ideal and lossy transmission line. [L4][CO.3][6M] b. Derive the reflection coefficient of transmission line. [L4][CO.3][4M] 4. Illustrate Schmitt chart to estimate impedance. [L2][CO.2][10 M] 5. Illustrate how Short circuit constants (SCTs) technique used to estimate the bandwidth of linear network . [L2][CO.3][10M] 6. Illustrate how Open circuit constants (OCTs) technique used to estimate the bandwidth of linear network . [L2][CO.3][10M] 7. a. Define Elmore delay. [L2][CO.3][2M] b. Describe the delay of systems in cascade in terms of moments of impulse response. [L4][CO.3][8M] 8. a. Derive expression for overall rise time of systems in cascade using rise time addition rule. [L4][CO.3][8 M] b. Prove that risetime bandwidth product of first order system is 2.2. [L4][CO.3][2M] 9. a. Explain zeros as bandwidth enhancers. [L2][CO.3][5M] b. Design the shunt-series amplifier to enhance bandwidth. [L4][CO.3][5M] 10. a. Describe how single tuned amplifier achieves narrow band amplification. [L2][CO.3][6M] b. Describe how gain of cascaded amplifier changes with ‘n’. [L2][CO.3][4M] Short Answer Questions 1. Explain “Conductance modulation” in MOSFET. [L1][CO.2][2M] 2. Distinguish long channel and short channel MOSFET. [L2][CO.2][2M] 3. Explain important regimes of operating frequency. [L1][CO.2][2M] 4. Define the reflection coefficient. [L3][CO.2][2M] 5. Brief the bandwidth estimation techniques. [L1][CO.3][2M] 6. Draw the circuit for shunt peaked amplifier. [L3][CO.3][2M] 7. Draw the circuit for shunt-series amplifier. [L3][CO.3][2M] 8. Define rise time. [L1][CO.3][2M] 9. Define delay of the cascading system. [L1][CO.3][2M] 10. State the relation between bandwidth and risetime for first order system . [L2][CO.3][2M] 11. Write the equation drain current in long channel MOSFET. [L1][CO.3][2M] 12. State the relation between ID and Vds in in triode region of operation. [L1][CO.2][2M] 13. Brief the open circuit time constants (OCTs) technique. [L1][CO.3][2M] 14. Brief the short circuit constants (SCTs) techniques. [L1][CO.3][2M] 15. What is the use of smith chart in RF system. [L1][CO.2][2M] 16. Describe how bandwidth of cascaded amplifier changes with ‘n’. [L2][CO.3][2M] 17. Draw the circuit of single tuned amplifier. [L1][CO.2][2M] 18. State the bandwidth of multi stage amplifier. [L1][CO.2][2M] 19. State the role of RF in shunt series amplifier. [L1][CO.2][2M] 20. Brief about shunt series amplifier. [L3][CO.3][2M] Objective Questions 1. MOSFET is a ________ controlled device [ ] A. Voltage B. Current C. Power D. None 2. Long channel is actually ____ electric field [ ] A. High B. Low C. Medium D. None 3. Short channel is actually ____ electric field [ ] A. Medium B. High C. High D. None 4. The primary high-field effect is_______ [ ] A. Frequency modulation B. Current Saturation C. Voltage Saturation D. Velocity saturation 5. In long-channel devices, the saturation drain current is corresponding to ___ of the channel. [ ] A. Pinch-off. B. Vt C. Carrier velocity D.None 6. In short-channel devices, the saturation drain current is corresponding to __of the channel. [ ] A. Pinch-off. B. Vt C. Carrier velocity D.None 7. _____distinguishes "long-channel" from "short-channel". [ ] A. Electric field strengths. B.Vgs C.Vds D.None 8. Kirchhoff's voltage and current " laws" are used to approximate_____ regime [ ] A. Lumped B.Distributed C. Both A and B D. None 9. _________ parameter descriptions of circuits is used for ICs. [ ] A. Distributed B. Lumped C. Both A and B D. None 10. Net magnetic charge would cause________ in the magnetic field [ ] A. Convergence B. Curl C. Divergence D. None 11. Changing magnetic field causes _________ in the electric field. [ ] A. Convergence B. Curl C. Divergence D. None 12. Reduction of "parasitics" leads to ______ bandwidth [ ] A.Infinite B.Decrease C. Increase D. Zero 13. In ladder network the ratio of Zin to R is known as _______ [ ] A. Golden ratio B. Golden section C. A or B D. None 14. The characteristic impedance Zo of infinite transmission line [ ] A. C / L B. √LC C. √L/C2 D. √L/C 15. _____tells us the ratio of voltage to current at anyone point in an infinitely long line. [ ] A. Reflection coefficient B. Propagation constant C. Characteristic impedance D. None 16. _________ quantifies the line's attenuation properties. [ ] A. Reflection coefficient B. Propagation constant C. Characteristic impedance D. None 17. Propagation constant y= [ ] A. √Z/Y B. √Z-Y C. √Z+Y D. √ZY 18. The point Γ= - I in Schmitt chart corresponds to ____ resistance (or reactance). [ ] A. Infinite B. Minimum C. Maximum D. Zero 19. The point Γ = I in Schmitt chart corresponds to resistance (or reactance. [ ] A. Infinite B. Minimum C. Maximum D. Zero 20. Most of RF instruments and coaxial cables have standardized impedances of either __ohms [ ] A. 75 or 100 B. 10 or 40 C. 50 or 75 D. 100 or 75 21. Propagation constant γ = [ ] A. α-jβ B. α+jβ C. α/jβ D. α2+jβ 22. Since the attenuation is ________ at all frequencies, a lossless line has no bandwidth limit. [ ] A. Infinite B. Minimum C. Maximum D. Zero 23. If the load impedance equals the characteristic impedance of the line, Γ= [ ] A. Infinite B. Minimum C. Maximum D. Zero 24. At lower frequencies ___ is a powerful intuitive aid in the design of high-BW amplifiers. [ ] A. OCTs B.SCTs C. Both A and b D. None 25. A technique that satisfied requirement of large band width at low cost is known as ___ [ ] A. Shunt peaking B. Series Peaking C. Both A and B D. None 26. The method of open-circuit time constants OCTS is also known as ____time constants. [ ] A. Infinite value B. "zero value" C. Both A and B D. None 27. _____ identifies which elements are responsible for bandwidth limitation. [ ] A. SCTs B. OCTs C. Both A and B D. None 28. _____ is only the model that appropriate to high-frequency regime. [ ] A. SCTs B. OCTs C. Both A and B D. None 29. _____ is only the model that appropriate to low-frequency regime. [ ] A. SCTs B. OCTs C. Both A and B D. None 30. SCTS are concerned only with those________ that limit low-frequency gain. [ ] A. Capacitors B. Inductors C. Resistors D. All 31. Overall delay of a cascade of systems is simply the ____ of the individual delays. [ ] A. Sum B. Product C. Difference D. None 32. First moment of the impulse response defines the____ [ ] A. Risetime B. Time Delay C. Bandwidth D. None 33. Second moment of the impulse response defines the____ [ ] A. Risetime B. Time Delay C. Bandwidth D.None 34. Addition rule may be used to _________ the limits of instrumentation. [ ] A. Extend B. Decrease C. Stable D. None 35. trise= ______ [ ] A. RC B. 1.1 RC C. 10 RC D. 2.2 RC 36. _____ can be used to enhance the bandwidth [ ] A. Zeroes B. Poles C. Both A and B D. None 37. An alternative approach to design broadband amplifiers is to use ______ feedback [ ] A. Positive feedback B. Negative C. Both A and B D. None 38. Shunt peaking uses _________ network [ ] A. One-port B. Two-port C. Both A and B D. None 39. Shunt-series amplifier can be used to achieve ________ bandwidth [ ] A. Zero B. Narrow C. Broader D.None 40. Smith chart can be used for matching _______ impedances [ ] A. Load B. Source C. Both A and B D. Zero