Applied Electronics –PT

Coimbatore - india
 Twin well Process

Provide separate optimization of the n-type and p-type transistors

This means that transistor parameters such as threshold voltage, body

effect and the channel transconductance of both types of transistors can be
tuned independently

n+ or p+ substrate, with a lightly doped epitaxial layer on top, forms the
starting material for this technology.

The n-well and pwell are formed on this epitaxial layer which forms the
actual substrate.

The dopant concentrations can be carefully optimized to produce the

desired device characteristics because two independent doping steps are
performed to create the well regions.
 Twin well Process Continued…,

The starting material is either an n+ or p+ substrate with a lightly doped

epitaxial layer, which is used for protection against latch up

This process provides separately optimized wells, balanced performance n-

transistors and p-transistors may be constructed

Tub formation

 Thin-oxide construction

 Source and drain implantations

 Contact cut definition

 Metallization
Twin well Process Steps
Step1:
N or p type substrate is taken Initially
Step2:
Epitaxial Layer Deposition, Lightly Doped Epitaxial Layer is
Deposited above n+ or p+ Substrate.
Electrical Properties of Layer is Fixed by Dopant and its
Concentration.
The Aim of This Step is to Deposite High-Purity Silicon Layer.
Concentration of Dopant Distributed Throught the Layer
Step3:
Tub Formation
n -well-Formation
Protect certain region in this by using an oxide nitride mask
Phosphorus implantation
Form n-well
Entire substrate to an oxidation process
The oxide is going to be formed only over the n-well
The rest of the portions are protected by the oxide nitride mask
This n-well will also be driven deeper
Step4:
p -well-Formation
Protect certain region in this by using an oxide nitride mask
Boron implantation
Form p-well
Entire substrate to an oxidation process
Implant The p-well
Step 5:
Polysilicon Layer is Formed The Overall Surface
Step 6:
Polysilicon gates Are Formed for n-well and p-well by Using Photo-Etching
Process
Step 7:
Using Blanket Implantation(Auto Aligning The Wells)
Step 8:
n+ Diffusion is Formed in n-well
p+ Diffusion is Formed in p-well
These Are Used For VDD and VSS Contacts(Substrate Formation)
Step9:
Contact Cuts Are Defined In Both The Wells
Step10:
Metalization Process (Metal Contacts Are Created)
 Dual-Well Trench-Isolated CMOS

gate oxide field oxide

Al (Cu)

SiO2
TiSi2
tungsten

SiO2
p well N well

p-epitaxial
n+ p+

p-
Advantages of Twin Tub Method:

Separate Optimized Wells Are Available

Balanced Performance of N and P Transistors is Obtained(Speciality)
Advance Twin Tub Process